TBA 616 Search Results

fresnel reflector

Abstract: 105WATT
Contextual Info: LED Traffic Signal Series 438 Dual Voltage 120VAC-230VAC 200 mm / 300 mm View of blackened lens type signal when off • High efficiencies as a result of the new High Flux Reflector Technology and Central Light Source • No Colour Phantom when fitted with the blackened smoked effect

Contextual Info: Direction Of Feed miniver Cathode SOT23 Melf &SOD80 Tantalum Cap. Aluminum Cap. Bridge Rectifier Trailer & Leader Specifications — I p k - Em pty Cavities Filled Cavities Em pty C avities A W P mm 8mm 2mm 4mm 4mm 8mm 25mm min. 24 12 12 6 50mm min. 24 12

MH1SS1

Abstract: TESLA mh 7400 MH 7404 mh 7400 tesla cdb 838 tda 7851 L 741PC TDB0124DP tda 4100 TDA 7851 A
Contextual Info: m ö lk ^ o e le l-c te n a n il-c Information Applikation RGW Typenübersicht Vergleich Teil 2: RGW M iM U Z A U l KÉD lnrüÖC=SraO Information Applikation HEFT 50 RGW Typenübersicht + Vergleich Teil 2: RGW wob Halbleiterwerk Frankfurt /oder bt r iab im v«b kombinat mikrootektronik

TBA 611

Abstract: TBA 651
Contextual Info: Trailer & Leader Tape Specifications Cover Tape A Reel D ia W 8mm 4 " 100mm 12mm 16mm 7" (180mm) 24mm 32mm m ini Reel P 2mm 4mm 4mm 8mm 4mm 8mm 12mm 8mm 12mm 16mm 20mm 16mm 24mm mm C +D Nbr Cavity 25mm min. 24 12 12 6 50mm min. 24 12 8 12 8 6 5 6 4 mm Nbr

APC UPS CIRCUIT DIAGRAM rs 1500

Abstract: APC UPS es 500 CIRCUIT DIAGRAM APC UPS 650 CIRCUIT DIAGRAM schematic diagram APC back ups XS 1000 TAA550 APC UPS CIRCUIT DIAGRAM UPS APC rs 1000 CIRCUIT diagram UPS APC rs 800 CIRCUIT diagram APC Back ES 500 UPS circuit diagram CIRCUIT DIAGRAM APC UPS 700
Contextual Info: 1 2 AF106 G E R M A N IU M MESA PNP VHF MIXER/OSCILLATOR The AF 106 is a germanium mesa PNP transistor in a Jedec TO-72 metal case. It Is particularly designed for use as preamplifier mixer and oscillator up to 260 MHz. ABSOLUTE MAXIMUM RATINGS ^CBO VcEO ^EBO

SAS 251

Abstract: 4580d tda 2022 Tda 865 TDA 7650 CPA 7660 cmo 765 TAA 2761 A TCA4510 TAA761A
Contextual Info: 1:UNKAMATEUR-Bauelementeinformation IS Vergleichslisten für integrierte Schaltkreise DDR/international IS für den Einsatz in Rundfunkempfängern und Recordern DDR-Typ Vergleichstyp Beschreibung DDR-Typ Vergleichstyp Beschreibung A 202 D A 22SD A 244 D/SD

74aLS808

Abstract: 74ALS677 74ALS468 SN74AS877 SN74LS630 SM54A NCE 7190 74ls631 SN74LS693 TTL Data Book for Design Engineers
Contextual Info: ADVANCED LOW-POWER SCHOTTKY AND ADVANCED SCHOTTKY CIRCUITS FUNCTION DEVICE AS1032 ALS1034 AS1034 Quad 2-Input OR Buffers/ Drivers A VAILABILITY NOW NOW NOW Hex Drivers NOW ALS1035 Hex Buffers with D-C Outputs NOW AS1036 Quad 2-Input NOR Line Driver NOW ALS1240

uPD4632312F9-BE95X-BT3

Contextual Info: DATA SHEET MOS INTEGRATED CIRCUIT µPD4632312-X 32M-BIT CMOS MOBILE SPECIFIED RAM 2M-WORD BY 16-BIT EXTENDED TEMPERATURE OPERATION Description The µPD4632312-X is a high speed, low power, 33,554,432 bits 2,097,152 words by 16 bits CMOS mobile specified RAM featuring low power static RAM compatible function and pin configuration.

Contextual Info: DATA SHEET MOS INTEGRATED CIRCUIT µPD4632312-X 32M-BIT CMOS MOBILE SPECIFIED RAM 2M-WORD BY 16-BIT EXTENDED TEMPERATURE OPERATION Description The µPD4632312-X is a high speed, low power, 33,554,432 bits 2,097,152 words by 16 bits CMOS mobile specified RAM featuring low power static RAM compatible function and pin configuration.

uPD4632312F9-BE95X-BT3

Abstract: uPD4632312-X
Contextual Info: DATA SHEET MOS INTEGRATED CIRCUIT µPD4632312-X 32M-BIT CMOS MOBILE SPECIFIED RAM 2M-WORD BY 16-BIT EXTENDED TEMPERATURE OPERATION Description The µPD4632312-X is a high speed, low power, 33,554,432 bits 2,097,152 words by 16 bits CMOS mobile specified RAM featuring low power static RAM compatible function and pin configuration.

bussmann semiconductor fuse catalogue

Abstract: bs1362 BUSSMANN SFT Series HKP-HH fuses T2A 250V C520 A/D 1.5A, 125V, 32mm glass fuse IEC-127-4 HTC220M FUSE 3A 125V SMT
Contextual Info: Bussmann Table of Contents Fuse Holder Selection Chart 2 Surface Mount Fuses 3 Axial and Radial Leaded Fuses 8 5 x 15mm Fuses 12 5 x 20mm Fuses 18 6.3 x 32mm Fuses 36 Automotive Fuses 46 Miscellaneous Fuses 47 Fuse Clips for 5mm dia. Fuses 51 Fuse Clips for 6.3mm dia. Fuses

Contextual Info: Trailer & Leader Tape Specifications P O O a o . □ o □ o o o t w _L O t s u e n . f — D i ^ ^ _ 5 — rv E Cover Tape Reel Dia W P 2mm 4mm 4mm 8mm 16mm 4mm 8mm 12mm 8mm 7 12mm 180mm 24mm 16mm 20mm 16mm 32mm 24mm 8mm 4 (100mm) 12mm " " m ini mm A 24

Contextual Info: PRELIMINARY BiCMOS SRAM KM616BV4002 25 6K x 16 Bit High-Speed BiCMOS Static RAM 3.3V Operating FEATURES GENERAL DESCRIPTION • Fast Access Time 12,15,20 ns(Max.) • Low Power Dissipation Standby (TTL) : 60 mA(Max.) (CMOS):30 mA(Max.) Operating KM 616BV4002J-12 : 240m A (M ax.)

KM684002J

Abstract: M68400 KM6164002
Contextual Info: KM 6164002/L CM OS SRAM 262,144 WORD x 16 Bit High Speed CMOS Static RAM FEATURES GENERAL DESCRIPTION • Fast Access Time : 20, 25, 35ns Max. • Low Power Dissipation Standby (TTL) : 60mA (Max.) (CMOS) : 10mA (Max.) L-Ver : 500//A (Max) Operating : KM6164002-20 : 250mA (Max.)

Contextual Info: 3UHOLPLQDU\#LQIRUPDWLRQ $6:&64359// 6169#97.ð49#,QWHOOLZDWWŒ#ORZ#SRZHU#&026#65$0 HDWXUHV • Easy memory expansion with CE, OE inputs • LVTTL/LVCMOS-compatible, three-state I/O • JEDEC registered packaging - 44-pin TSOP II package - 48-ball csp 8mm x 6mm BGA

AC125K

Abstract: 6AN7 tungsram 3S035T-1 ecc83 application notes ECL86 DG 7-123 tungsram AC125UZ PENTODE pl 508 ot-400 tungsram
Contextual Info: TUNGSRAM 1 ELECTRON TUBES AND SEMI­ CONDUCTORS 1979 RADIO & TV RECEIVING TUBES OSCILLOSCOPE & MONITOR TUBES TRANSMITTING TUBES, RECTIFIERS & MICROWAVE TUBES SEMICONDUCTORS RECEIVING TUBES CONSUMER TYPES INDUSTRIAL TYPES VOLTAGE REGULATORS TY P E ASSO R TM EN T

10n 431K varistor

Abstract: 20V-431K 10v 471k tnr 431K-471K tnd10se 221K-621K TND07 TND12V-471KB TND14SE tea 6520
Contextual Info: METAL OXIDE VARISTORS TNRTM RoHS Compliant ◆FEATURES surge capability the surge current ratings of TNR V series, by 8/20 µs, are about two times larger than TNR G series . ● Large energy capability (1.5 time larger than TNR G series). ● One rank smaller TNR V has same peak current as TNR G.

20e221

Abstract: WP1J 10V471K varistor 472 ns b 10v 471k tnr 47p3 10n 471k TRANSISTOR F10 10N metal oxide varistor 471k 20k tnr g 471k
Contextual Info: METAL OXIDE VARISTORS TNR METAL OXIDE VARISTORS TNR CAT. No. E1006S INDEX PRODUCT SEARCH SERIES TABLE PRECAUTIONS AND GUIDELINES GROUP CHART PART NUMBERING SYSTEM TECHNICAL TERMS ON VARISTORS PRODUCTION GUIDE SAFETY STANDARDS TAPING SPECIFICATION PACKAGING

NAND Flash Programmer with TSOP-48 adapter

Abstract: INTEL Core i7 860 schematic diagram inverter lcd monitor fujitsu MB506 ULTRA HIGH FREQUENCY PRESCALER fujitsu LVDS vga MB89625R VHDL code simple calculator of lcd display JTag Emulator MB90F497 Millbrook BGA TBA 129-5
Contextual Info: Master Product Selector Guide February 2001 Fujitsu Microelectronics, Inc. Contents Introduction. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Application Specific ICs ASICs . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3

KM616B4002J

Abstract: SRAM 10ns
Contextual Info: PRELIMINARY BiCMOS SRAM KM616B4002 262,144 WORD x 16 Bit High-Speed BiCMOS Static RAM FEATURES GENERAL DESCRIPTION • Fast Access Time : 10ns, 12ns, 15ns • Low Power Dissipation Standby TTL : 60 mA (CMOS) : 30mA Operating K M 616B 4002J-10: 280mA(Max.)

ER 900

Abstract: TBA 616 datasheet DB 646 TBA 616 Nd103 Yb198 1350nm tba 1175 tba 790 tba 940
Contextual Info: I Rare-earth-doped fibers NO has been manufacturing rare-earth-doped fibers for more than ten years. The inventory that we currently have includes more than 70 different types. We offer Erbium, Ytterbium, Neodymium, Thulium, Terbium and Samarium-doped fibers along with co-doped fibers like Erbium-Ytterbium.

Contextual Info: Preliminary KM616V4002A CMOS SRAM 256K x 16 Bit High-Speed CMOS Static RAM GENERAL DESCRIPTION FEATURES • Fast Access Tim e 12,15,20 ns Max. • Low Power Dissipation Standby (TTL) : 50 m A (Max.) (C M O S ): 10 mA (Max.) Operating KM616V4002A -12 : 240 mA (Max.)

Contextual Info: PRELIMINARY BiCMOS SRAM KM616B4002 256Kx 16 Bit High-Speed BiCMOS Static RAM FEATURES GENERAL DESCRIPTION • Fast Access Tim e 10,12,15 ns Max. • Low Power Dissipation Standby (TTL) : 60 mA(Max.) (CMOS) : 30 mA(Max.) Operating KM 616B4002J-10 : 280 mA(Max.)

Contextual Info: KM6161002 CMOS SRAM ELECTR O NICS 6 4 K x 1 6 B H High-Speed CMOS Static RAM FEATURES GENERAL DESCRIPTION • Fast Access Time 15,17,20 ns Max • Low Power Dissipation Standby (TTL) : 40 mA(Max.) (CMOS): 10 mA(Max.) Operating KM6161002-15 : 230 mA(Max.)