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    Kyocera AVX Components TAJD106K035RFJ

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    TAJD106K035 Datasheets (13)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    TAJD106K035 Freescale Semiconductor RF LDMOS Wideband Integrated Power Amplifiers Original PDF
    TAJD106K035A AVX Standard Tantalum Capacitor Original PDF
    TAJD106K035B AVX Standard Tantalum Capacitor Original PDF
    TAJD106K035HNJ AVX Tantalum Capacitors, Capacitors, CAP TANT 10UF 35V 10% 2917 Original PDF
    TAJD106K035P AVX Standard Tantalum Capacitor Original PDF
    TAJD106K035R AVX Standard Tantalum Capacitor Original PDF
    TAJD106K035R AVX Tantalum Capacitor; Capacitance:10uF; Capacitance Tolerance:+/- 10 %; Working Voltage, DC:35V; Package/Case:7343-31; Terminal Type:PCB SMT; ESR:1ohm; Dielectric Material:Tantalum; Dissipation Factor:0.06% Original PDF
    TAJD106K035R AVX Over 600 obsolete distributor catalogs now available on the Datasheet Archive - Capacitor, Tantalum, Chip, 7343, 10uF, 10% Tol, 35 Volts Scan PDF
    TAJD106K035RNJ AVX CAP 10UF 35V 10% TANT SMD-7343-31 TR-7 Original PDF
    TAJD106K035RY AVX Capacitors - Tantalum Capacitors - CAP TANT 10UF 10% 35V 2917 Original PDF
    TAJD106K035S AVX Standard Tantalum Capacitor Original PDF
    TAJD106K035S AVX CAP 10UF 35V 10% TANT SMD-7343-31 TR-13 Original PDF
    TAJD106K035X-MR Unknown CAP. 10UF MINIREEL 100PCS Original PDF

    TAJD106K035 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    Untitled

    Abstract: No abstract text available
    Text: THS6043EVM User’s Guide August 2002 High Performance Linear Products SLOU139 IMPORTANT NOTICE Texas Instruments Incorporated and its subsidiaries TI reserve the right to make corrections, modifications, enhancements, improvements, and other changes to its products and services at any time and to discontinue


    Original     		THS6043EVM SLOU139 THS6043 THS6043 PDF

    mrf5s19060nr1

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Document Number: MRF5S19060N Rev. 7, 10/2008 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF5S19060NR1 MRF5S19060NBR1 Designed for broadband commercial and industrial applications with


    Original     		MRF5S19060N MRF5S19060NR1 MRF5S19060NBR1 MRF5S19060NR1 PDF

    MW4IC2230NB

    Abstract: j631 marking j130 J242
    Text: Freescale Semiconductor Technical Data Document Number: MW4IC2230 Rev. 4, 8/2005 RF LDMOS Wideband Integrated Power Amplifiers The MW4IC2230 wideband integrated circuit is designed for W - CDMA base station applications. It uses Freescale’s newest High Voltage 26 to 28 Volts


    Original     		MW4IC2230 MW4IC2230NBR1 MW4IC2230GNBR1 MW4IC2230MBR1 MW4IC2230GMBR1 MW4IC2230 MW4IC2230NB j631 marking j130 J242 PDF

    Untitled

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Document Number: MRF5S19060N Rev. 4, 8/2005 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF5S19060NR1 MRF5S19060NBR1 MRF5S19060MR1 MRF5S19060MBR1 Designed for broadband commercial and industrial applications with


    Original     		MRF5S19060N MRF5S19060NR1 MRF5S19060NBR1 MRF5S19060MR1 MRF5S19060MBR1 MRF5S19060N PDF

    A113

    Abstract: A114 A115 AN1955 C101 JESD22 MRF5S19060N MRF5S19060NBR1 MRF5S19060NR1 MRF5S19060NB
    Text: Freescale Semiconductor Technical Data Document Number: MRF5S19060N Rev. 7, 10/2008 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF5S19060NR1 MRF5S19060NBR1 Designed for broadband commercial and industrial applications with


    Original     		MRF5S19060N MRF5S19060NR1 MRF5S19060NBR1 MRF5S19060NR1 A113 A114 A115 AN1955 C101 JESD22 MRF5S19060N MRF5S19060NBR1 MRF5S19060NB PDF

    hatching machine

    Abstract: 100B8R2CW A113 AN1987 MW4IC2230 MW4IC2230GMBR1 MW4IC2230MBR1 TAJD106K035
    Text: MOTOROLA Freescale Semiconductor, Inc. Order this document by MW4IC2230/D SEMICONDUCTOR TECHNICAL DATA The Wideband IC Line Freescale Semiconductor, Inc. RF LDMOS Wideband Integrated Power Amplifiers The MW4IC2230 wideband integrated circuit is designed for W - CDMA base


    Original     		MW4IC2230/D MW4IC2230 MW4IC2230MBR1 MW4IC2230GMBR1 hatching machine 100B8R2CW A113 AN1987 MW4IC2230GMBR1 TAJD106K035 PDF

    A113

    Abstract: AN1955 MRF5S19060MBR1 MRF5S19060MR1 MRF5S19060NBR1 MRF5S19060NR1
    Text: MOTOROLA Freescale Semiconductor, Inc. Order this document by MRF5S19060N/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field Effect Transistors MRF5S19060NR1 Freescale Semiconductor, Inc. N - Channel Enhancement - Mode Lateral MOSFETs MRF5S19060NBR1


    Original     		MRF5S19060N/D MRF5S19060NR1 MRF5S19060NBR1 MRF5S19060NR1 MRF5S19060NBR1 MRF5S19060MR1 MRF5S19060MBR1 A113 AN1955 MRF5S19060MBR1 PDF

    schematic diagram atx Power supply 500w

    Abstract: pioneer PAL 012A 1000w inverter PURE SINE WAVE schematic diagram 600va numeric ups circuit diagrams winbond bios 25064 TLE 9180 infineon smsc MEC 1300 nu TBE schematic diagram inverter 2000w DK55 circuit diagram of luminous 600va UPS
    Text: QUICK INDEX NEW IN THIS ISSUE! Detailed Index - See Pages 3-24 Digital Signal Processors, iCoupler , iMEMS® and iSensor . . . . . 805, 2707, 2768-2769 Connectors, Cable Assemblies, IC Sockets . . . . . . . . . . . 28-568 RF Connectors . . . . . . . . . . . . . . . . . . . . . . Pages 454-455


    Original     		P462-ND P463-ND LNG295LFCP2U LNG395MFTP5U US2011) schematic diagram atx Power supply 500w pioneer PAL 012A 1000w inverter PURE SINE WAVE schematic diagram 600va numeric ups circuit diagrams winbond bios 25064 TLE 9180 infineon smsc MEC 1300 nu TBE schematic diagram inverter 2000w DK55 circuit diagram of luminous 600va UPS PDF

    panasonic inverter dv 707 manual

    Abstract: 018T A423 Mosfet FTR 03-E Arcotronics 1.27.6 nsl 7053 mkp DX 3500 manual Honeywell DBM 01A Polyester capacitors 823k 250V SPRAGUE powerlytic 36Dx sprague 68D
    Text: PASSIVE COMPONENTS Resistors Networks and Arrays Bourns. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 590, 591, 592 Caddock . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 593 CTS. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 594


    Original     		PDF

    RM73Z2A000

    Abstract: S9002 smd led 1210 IC vertical panasonic SLMA002 SLMA004 THS6052 PCS6105CT-ND
    Text: THS6052 EVM User’s Guide August 2002 High Performance Linear Products SLOU138 IMPORTANT NOTICE Texas Instruments Incorporated and its subsidiaries TI reserve the right to make corrections, modifications, enhancements, improvements, and other changes to its products and services at any time and to discontinue


    Original     		THS6052 SLOU138 THS6052 RM73Z2A000 S9002 smd led 1210 IC vertical panasonic SLMA002 SLMA004 PCS6105CT-ND PDF

    AN1955

    Abstract: 100B8R2CW A113 AN1977 AN1987 MW4IC2230GNBR1 MW4IC2230NBR1 TAJD106K035
    Text: Freescale Semiconductor Technical Data Document Number: MW4IC2230N Rev. 6, 5/2006 RF LDMOS Wideband Integrated Power Amplifiers The MW4IC2230N wideband integrated circuit is designed for W - CDMA base station applications. It uses Freescale’s newest High Voltage 26 to 28


    Original     		MW4IC2230N MW4IC2230N MW4IC2230NBR1 MW4IC2230GNBR1 AN1955 100B8R2CW A113 AN1977 AN1987 MW4IC2230GNBR1 TAJD106K035 PDF

    Untitled

    Abstract: No abstract text available
    Text: THS6053EVM User’s Guide August 2002 High Performance Linear Products SLOU140 IMPORTANT NOTICE Texas Instruments Incorporated and its subsidiaries TI reserve the right to make corrections, modifications, enhancements, improvements, and other changes to its products and services at any time and to discontinue


    Original     		THS6053EVM SLOU140 THS6053 THS6053 PDF

    Untitled

    Abstract: No abstract text available
    Text: THS6052 EVM User’s Guide August 2002 High Performance Linear Products SLOU138 IMPORTANT NOTICE Texas Instruments Incorporated and its subsidiaries TI reserve the right to make corrections, modifications, enhancements, improvements, and other changes to its products and services at any time and to discontinue


    Original     		THS6052 SLOU138 THS6052 PDF

    smd transistor 6g

    Abstract: 6G smd transistor s band POWER TRANSISTOR 2.7 3.1 3.5 GHZ nxp 544 200B BLS6G2731-6G TAJD106K035R transistor equivalent table sot975c radar circuit component
    Text: BLS6G2731-6G LDMOS S-Band radar power transistor Rev. 01 — 19 February 2009 Product data sheet 1. Product profile 1.1 General description 6 W LDMOS power transistor intended for radar applications in the 2.7 GHz to 3.1 GHz range. Table 1. Typical performance


    Original     		BLS6G2731-6G BLS6G2731-6G smd transistor 6g 6G smd transistor s band POWER TRANSISTOR 2.7 3.1 3.5 GHZ nxp 544 200B TAJD106K035R transistor equivalent table sot975c radar circuit component PDF

    IM324

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Document Number: MRF5S19060N Rev. 4, 8/2005 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF5S19060NR1 MRF5S19060NBR1 MRF5S19060MR1 MRF5S19060MBR1 Designed for broadband commercial and industrial applications with


    Original     		MRF5S19060N MRF5S19060NR1 MRF5S19060NBR1 MRF5S19060MR1 MRF5S19060MBR1 MRF5S19060N IM324 PDF

    TO272* APPLICATION

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data MW4IC2230 Rev. 3, 1/2005 RF LDMOS Wideband Integrated Power Amplifiers The MW4IC2230 wideband integrated circuit is designed for W−CDMA base station applications. It uses Freescale’s newest High Voltage 26 to 28 Volts


    Original     		MW4IC2230 MW4IC2230NBR1 MW4IC2230GNBR1 MW4IC2230MBR1 MW4IC2230GMBR1 TO272* APPLICATION PDF

    35d21

    Abstract: MRF6S20010GNR1 j3068 1990 1142 MRF6S20010N A113 ATC100B9R1BT500XT A115 AN1955 CDR33BX104AKYS
    Text: Freescale Semiconductor Technical Data Document Number: MRF6S20010N Rev. 3, 6/2009 RF Power Field Effect Transistors MRF6S20010NR1 MRF6S20010GNR1 N - Channel Enhancement - Mode Lateral MOSFETs Designed for Class A or Class AB general purpose applications with


    Original     		MRF6S20010N MRF6S20010NR1 MRF6S20010GNR1 MRF6S20010NR1 35d21 MRF6S20010GNR1 j3068 1990 1142 MRF6S20010N A113 ATC100B9R1BT500XT A115 AN1955 CDR33BX104AKYS PDF

    Untitled

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs Designed for Class A or Class AB general purpose applications with frequencies from 1600 to 2200 MHz. Suitable for analog and digital modulation


    Original     		MMRF1004NR1 MMRF1004GNR1 MMRF1004N PDF

    733W

    Abstract: No abstract text available
    Text: MOTOROLA Order this document by MRF5S19060N/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF5S19060NR1 Designed for broadband commercial and industrial applications with


    Original     		MRF5S19060N/D MRF5S19060NR1 MRF5S19060NBR1 733W PDF

    TO272

    Abstract: AN-587 motorola MW4IC2230MBR1
    Text: MOTOROLA Order this document by MW4IC2230/D SEMICONDUCTOR TECHNICAL DATA The Wideband IC Line RF LDMOS Wideband Integrated Power Amplifiers The MW4IC2230 wideband integrated circuit is designed for W–CDMA base station applications. It uses Motorola’s newest High Voltage 26 to 28 Volts


    Original     		MW4IC2230/D MW4IC2230 MW4IC2230MBR1 MW4IC2230GMBR1 TO272 AN-587 motorola PDF

    Untitled

    Abstract: No abstract text available
    Text: MOTOROLA Order this document by MW4IC2230/D SEMICONDUCTOR TECHNICAL DATA The Wideband IC Line RF LDMOS Wideband Integrated Power Amplifiers The MW4IC2230 wideband integrated circuit is designed for W - CDMA base station applications. It uses Motorola’s newest High Voltage 26 to 28 Volts


    Original     		MW4IC2230/D MW4IC2230 MW4IC2230MBR1 MW4IC2230GMBR1 PDF

    CAPACITOR TANTALUM 22uf 16v

    Abstract: TANTALUM capacitor, .10uF 35V CAPACITOR TANTALUM 4.7UF 35V 470uf 16V tantalum 10uF CAPACITOR 35V tantalum 10uF 16V tantalum capacitor capacitor 10uf 16v 10uf 16V capacitor 156 35v 16v 100uf
    Text: TANTALUM CAPACITOR ITEM PART# 1 NRA104K20R8 2 NRA154K35R8 3 NRA224K35R8 4 293D224X9035A2T 5 NRA684K20R8 6 NRA105K10R8 7 NRA105K16R8 8 293D105X9016A2T 9 ECST1CY105KR 10 TAJA155K016R 11 293D155X9020A2T 12 NRA225K10R8 13 293D225X9010A2T 14 TAJA225K010R 15 NRA225K20R8


    Original     		NRA104K20R8 NRA154K35R8 NRA224K35R8 293D224X9035A2T NRA684K20R8 NRA105K10R8 NRA105K16R8 293D105X9016A2T ECST1CY105KR TAJA155K016R CAPACITOR TANTALUM 22uf 16v TANTALUM capacitor, .10uF 35V CAPACITOR TANTALUM 4.7UF 35V 470uf 16V tantalum 10uF CAPACITOR 35V tantalum 10uF 16V tantalum capacitor capacitor 10uf 16v 10uf 16V capacitor 156 35v 16v 100uf PDF

    t490d106k035at

    Abstract: j3068
    Text: Freescale Semiconductor Technical Data Document Number: MRF6S20010N Rev. 2, 12/2008 RF Power Field Effect Transistors MRF6S20010NR1 MRF6S20010GNR1 N - Channel Enhancement - Mode Lateral MOSFETs Designed for Class A or Class AB general purpose applications with


    Original     		MRF6S20010N MRF6S20010NR1 MRF6S20010GNR1 t490d106k035at j3068 PDF

    100B1R0BW

    Abstract: A113 A114 A115 AN1955 C101 JESD22 MRF5S19060MBR1 MRF5S19060MR1
    Text: Freescale Semiconductor Technical Data Document Number: MRF5S19060M Rev. 5, 5/2006 Replaced by MRF5S19060NR1/NBR1. There are no form, fit or function changes with this part replacement. N suffix added to part number to indicate transition to lead - free terminations.


    Original     		MRF5S19060M MRF5S19060NR1/NBR1. MRF5S19060MR1 MRF5S19060MBR1 MRF5S19060MR1 100B1R0BW A113 A114 A115 AN1955 C101 JESD22 MRF5S19060MBR1 PDF