g30n60c3d
Abstract: G30N60 TA49053 TA49051 HGTG30N60C3D LD26 RHRP3060
Text: HGTG30N60C3D Data Sheet January 2009 File Number 4041.2 63A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diodes Features The HGTG30N60C3D is a MOS gated high voltage switching device combining the best features of MOSFETs and bipolar transistors. The device has the high input
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HGTG30N60C3D
HGTG30N60C3D
150oC.
TA49051.
TA49053.
230ns
150oC
g30n60c3d
G30N60
TA49053
TA49051
LD26
RHRP3060
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No 42 G30N60C3D
Abstract: g30n60c3d HGTG30N60C3D LD26 RHRP3060 TA49051 TA49053 g30n60 G30N60C
Text: HGTG30N60C3D S E M I C O N D U C T O R 63A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode August 1995 Features • • • • • Package o 63A, 600V at TC = +25 C Typical Fall Time - 230ns at TJ = +150oC Short Circuit Rating Low Conduction Loss
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HGTG30N60C3D
230ns
150oC
O-247
HGTG30N60C3D
150oC.
TA49051.
1-800-4-HARRIS
No 42 G30N60C3D
g30n60c3d
LD26
RHRP3060
TA49051
TA49053
g30n60
G30N60C
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G30N60
Abstract: G30N60C3 G30N60C3S HGTG SC-15 HGT4E30N60C3S HGTG30N60C3 LD26 RHRP3060 TA49051
Text: HGTG30N60C3, HGT4E30N60C3S Data Sheet December 2001 63A, 600V, UFS Series N-Channel IGBT Features The HGTG30N60C3 and HGT4E30N60C3S are MOS gated high voltage switching devices combining the best features of MOSFETs and bipolar transistors. These devices have the
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HGTG30N60C3,
HGT4E30N60C3S
HGTG30N60C3
HGT4E30N60C3S
150oC.
G30N60
G30N60C3
G30N60C3S
HGTG
SC-15
LD26
RHRP3060
TA49051
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g30n60
Abstract: g30n60c3d RHRP3060 TA49051 TA49053 HGTG30N60C3D
Text: HGTG30N60C3D Data Sheet January 2000 File Number 4041.2 63A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diodes Features The HGTG30N60C3D is a MOS gated high voltage switching device combining the best features of MOSFETs and bipolar transistors. The device has the high input
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Original
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HGTG30N60C3D
HGTG30N60C3D
150oC.
TA49051.
TA49053.
230ns
150oC
g30n60
g30n60c3d
RHRP3060
TA49051
TA49053
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PDF
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G30N60
Abstract: TA49051 G30N60C3 HGTG30N60C3 LD26 RHRP3060 igbts
Text: HGTG30N60C3 Data Sheet December 2001 63A, 600V, UFS Series N-Channel IGBT Features The HGTG30N60C3 is a MOS gated high voltage switching device combining the best features of MOSFETs and bipolar transistors. The device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar
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Original
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HGTG30N60C3
HGTG30N60C3
150oC.
230ns
150oC
G30N60
TA49051
G30N60C3
LD26
RHRP3060
igbts
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G30N60C3
Abstract: igbt g30n60c3 HGTG30N60C3 LD26 RHRP3060 TA49051
Text: HGTG30N60C3 Data Sheet January 2000 63A, 600V, UFS Series N-Channel IGBT Features The HGTG30N60C3 is a MOS gated high voltage switching device combining the best features of MOSFETs and bipolar transistors. The device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar
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HGTG30N60C3
HGTG30N60C3
150oC.
230ns
150oC
G30N60C3
igbt g30n60c3
LD26
RHRP3060
TA49051
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TA49053
Abstract: g30n60c3d
Text: HGTG30N60C3D Data Sheet January 2009 File Number 4041.2 63A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diodes Features The HGTG30N60C3D is a MOS gated high voltage switching device combining the best features of MOSFETs and bipolar transistors. The device has the high input
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Original
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HGTG30N60C3D
HGTG30N60C3D
150oC.
TA49051.
TA49053.
230ns
150oC
TA49053
g30n60c3d
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PDF
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g30n60c3
Abstract: TA49051 HGTG30N60C3 LD26 RHRP3060 g30n60
Text: HGTG30N60C3 Data Sheet January 2000 63A, 600V, UFS Series N-Channel IGBT Features The HGTG30N60C3 is a MOS gated high voltage switching device combining the best features of MOSFETs and bipolar transistors. The device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar
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Original
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HGTG30N60C3
HGTG30N60C3
150oC.
230ns
150oC
g30n60c3
TA49051
LD26
RHRP3060
g30n60
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g30n60c3d
Abstract: G30N60 transistor 40411 40411 transistor TA49051 TA49014 No 42 G30N60C3D TA49053 HGTG30N60C3D N-channel enhancement 200V 60A
Text: HGTG30N60C3D S E M I C O N D U C T O R 63A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diodes January 1997 Features • • • • • Package o 63A, 600V at TC = 25 C Typical Fall Time . . . . . . . . . . . . . . 230ns at TJ = 150oC Short Circuit Rating
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HGTG30N60C3D
230ns
150oC
O-247
HGTG30N60C3D
150oC.
1-800-4-HARRIS
g30n60c3d
G30N60
transistor 40411
40411 transistor
TA49051
TA49014
No 42 G30N60C3D
TA49053
N-channel enhancement 200V 60A
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65e9 transistor
Abstract: transistor 75307D Transistor 65e8 SD MOSFET DRIVE DATASHEET 4468 8 PIN G40N60 RHR15120 equivalent 10n120bnd 76107d transistor 76121D emerson three phase dc motor driver service note
Text: DUAL DIE POWER MOSFETs TM 1 1-888-INTERSIL or 321-724-7143 | | ID AMPS rDS ON VGE = 10V OHMS rDS(ON) VGE = 5V OHMS rDS(ON) VGE = 2.5V OHMS TYPE MS-012AA (SO-8) MO-153AA (TSSOP-8) 12 3.50 - 0.050 - Dual N RF1K49090 - 12 3.50 - 0.130 - Dual P RF1K49093 - 12
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1-888-INTERSIL
MS-012AA
MO-153AA
RF1K49090
RF1K49093
RF1K49092
ITF87056DQT
ITF87072DK8T
ITF87008DQT
RF1K49223
65e9 transistor
transistor 75307D
Transistor 65e8
SD MOSFET DRIVE DATASHEET 4468 8 PIN
G40N60
RHR15120 equivalent
10n120bnd
76107d
transistor 76121D
emerson three phase dc motor driver service note
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HGTG30N60C3D
Abstract: IGBTs g30n60c3d No 42 G30N60C3D TA49051 TA49053 LD26 RHRP3060
Text: HGTG30N60C3D Data Sheet December 2001 63A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diodes The HGTG30N60C3D is a MOS gated high voltage switching device combining the best features of MOSFETs and bipolar transistors. The device has the high input
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Original
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HGTG30N60C3D
HGTG30N60C3D
150oC.
TA49051.
TA49053.
230ns
150oC
IGBTs
g30n60c3d
No 42 G30N60C3D
TA49051
TA49053
LD26
RHRP3060
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PDF
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g30n60c3d
Abstract: TA49051 G30N60 HGTG30N60C3D 63a 216 LD26 RHRP3060 TA49053
Text: HGTG30N60C3D Data Sheet January 2000 File Number 4041.2 63A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diodes Features The HGTG30N60C3D is a MOS gated high voltage switching device combining the best features of MOSFETs and bipolar transistors. The device has the high input
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Original
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HGTG30N60C3D
HGTG30N60C3D
150oC.
TA49051.
TA49053.
230ns
150oC
g30n60c3d
TA49051
G30N60
63a 216
LD26
RHRP3060
TA49053
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PDF
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g30n60c3
Abstract: TA49051 igbt g30n60c3 HGTG30N60C3 LD26 RHRP3060 740 MOSFET TRANSISTOR g30n60
Text: HGTG30N60C3 S E M I C O N D U C T O R 63A, 600V, UFS Series N-Channel IGBT January 1997 Features • • • • • Package 63A, 600V at TC = 25oC 600V Switching SOA Capability Typical Fall Time . . . . . . . . . . . . . . 230ns at TJ = 150oC Short Circuit Rating
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HGTG30N60C3
230ns
150oC
O-247
HGTG30N60C3
150oC.
g30n60c3
TA49051
igbt g30n60c3
LD26
RHRP3060
740 MOSFET TRANSISTOR
g30n60
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G30N60
Abstract: g30n60c3 TA49051 igbt g30n60c3 C110 HGTG30N60C3 LD26 U5025 40422
Text: HGTG30N60C3 in t e r r ii J a n u a ry . D ata S h eet m i 63A, 600V, UFS Series N-Channel IGBT Features The HGTG30N60C3 is a MOS gated high voltage switching device combining the best features of MOSFETs and bipolar transistors. The device has the high input impedance of a
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OCR Scan
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HGTG30N60C3
HGTG30N60C3
TA49051.
O-247
G30N60
g30n60c3
TA49051
igbt g30n60c3
C110
LD26
U5025
40422
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