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    G30N60C Search Results

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    G30N60C Price and Stock

    Rochester Electronics LLC HGTG30N60C3

    63A, 600V, UFS N-CHANNEL IGBT
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    DigiKey HGTG30N60C3 Bulk 124
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    Flip Electronics HGTG30N60C3D

    IGBT 600V 63A TO247-3
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    DigiKey HGTG30N60C3D Tube 100
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    onsemi HGTG30N60C3D

    IGBT 600V 63A TO247-3
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    DigiKey HGTG30N60C3D Tube
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    Avnet Americas HGTG30N60C3D Tube 0 Weeks, 2 Days 120
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    Newark HGTG30N60C3D Bulk 60
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    Flip Electronics HGTG30N60C3D 900
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    Rochester Electronics LLC HGTG30N60C3D

    IGBT 600V 63A TO247
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    DigiKey HGTG30N60C3D Bulk 44
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    Fairchild Semiconductor Corporation HGTG30N60C3D

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    Bristol Electronics HGTG30N60C3D 645
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    Quest Components HGTG30N60C3D 516
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    Rochester Electronics HGTG30N60C3D 7,113 1
    • 1 $6.69
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    • 100 $6.29
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    ComSIT USA HGTG30N60C3D 3,215
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    Find more G30N60C price and stock on Findchips.com

    G30N60C Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    g30n60c3d

    Abstract: G30N60 TA49053 TA49051 HGTG30N60C3D LD26 RHRP3060
    Text: G30N60C3D Data Sheet January 2009 File Number 4041.2 63A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diodes Features The G30N60C3D is a MOS gated high voltage switching device combining the best features of MOSFETs and bipolar transistors. The device has the high input


    Original     		PDF HGTG30N60C3D HGTG30N60C3D 150oC. TA49051. TA49053. 230ns 150oC g30n60c3d G30N60 TA49053 TA49051 LD26 RHRP3060

    No 42 G30N60C3D

    Abstract: g30n60c3d HGTG30N60C3D LD26 RHRP3060 TA49051 TA49053 g30n60 G30N60C
    Text: G30N60C3D S E M I C O N D U C T O R 63A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode August 1995 Features • • • • • Package o 63A, 600V at TC = +25 C Typical Fall Time - 230ns at TJ = +150oC Short Circuit Rating Low Conduction Loss


    Original     		PDF HGTG30N60C3D 230ns 150oC O-247 HGTG30N60C3D 150oC. TA49051. 1-800-4-HARRIS No 42 G30N60C3D g30n60c3d LD26 RHRP3060 TA49051 TA49053 g30n60 G30N60C

    G30N60

    Abstract: G30N60C3 G30N60C3S HGTG SC-15 HGT4E30N60C3S HGTG30N60C3 LD26 RHRP3060 TA49051
    Text: G30N60C3, HGT4E30N60C3S Data Sheet December 2001 63A, 600V, UFS Series N-Channel IGBT Features The G30N60C3 and HGT4E30N60C3S are MOS gated high voltage switching devices combining the best features of MOSFETs and bipolar transistors. These devices have the


    Original     		PDF HGTG30N60C3, HGT4E30N60C3S HGTG30N60C3 HGT4E30N60C3S 150oC. G30N60 G30N60C3 G30N60C3S HGTG SC-15 LD26 RHRP3060 TA49051

    g30n60

    Abstract: g30n60c3d RHRP3060 TA49051 TA49053 HGTG30N60C3D
    Text: G30N60C3D Data Sheet January 2000 File Number 4041.2 63A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diodes Features The G30N60C3D is a MOS gated high voltage switching device combining the best features of MOSFETs and bipolar transistors. The device has the high input


    Original     		PDF HGTG30N60C3D HGTG30N60C3D 150oC. TA49051. TA49053. 230ns 150oC g30n60 g30n60c3d RHRP3060 TA49051 TA49053

    G30N60

    Abstract: TA49051 G30N60C3 HGTG30N60C3 LD26 RHRP3060 igbts
    Text: G30N60C3 Data Sheet December 2001 63A, 600V, UFS Series N-Channel IGBT Features The G30N60C3 is a MOS gated high voltage switching device combining the best features of MOSFETs and bipolar transistors. The device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar


    Original     		PDF HGTG30N60C3 HGTG30N60C3 150oC. 230ns 150oC G30N60 TA49051 G30N60C3 LD26 RHRP3060 igbts

    G30N60C3

    Abstract: igbt g30n60c3 HGTG30N60C3 LD26 RHRP3060 TA49051
    Text: G30N60C3 Data Sheet January 2000 63A, 600V, UFS Series N-Channel IGBT Features The G30N60C3 is a MOS gated high voltage switching device combining the best features of MOSFETs and bipolar transistors. The device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar


    Original     		PDF HGTG30N60C3 HGTG30N60C3 150oC. 230ns 150oC G30N60C3 igbt g30n60c3 LD26 RHRP3060 TA49051

    TA49053

    Abstract: g30n60c3d
    Text: G30N60C3D Data Sheet January 2009 File Number 4041.2 63A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diodes Features The G30N60C3D is a MOS gated high voltage switching device combining the best features of MOSFETs and bipolar transistors. The device has the high input


    Original     		PDF HGTG30N60C3D HGTG30N60C3D 150oC. TA49051. TA49053. 230ns 150oC TA49053 g30n60c3d

    g30n60c3

    Abstract: TA49051 HGTG30N60C3 LD26 RHRP3060 g30n60
    Text: G30N60C3 Data Sheet January 2000 63A, 600V, UFS Series N-Channel IGBT Features The G30N60C3 is a MOS gated high voltage switching device combining the best features of MOSFETs and bipolar transistors. The device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar


    Original     		PDF HGTG30N60C3 HGTG30N60C3 150oC. 230ns 150oC g30n60c3 TA49051 LD26 RHRP3060 g30n60

    g30n60c3d

    Abstract: G30N60 transistor 40411 40411 transistor TA49051 TA49014 No 42 G30N60C3D TA49053 HGTG30N60C3D N-channel enhancement 200V 60A
    Text: G30N60C3D S E M I C O N D U C T O R 63A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diodes January 1997 Features • • • • • Package o 63A, 600V at TC = 25 C Typical Fall Time . . . . . . . . . . . . . . 230ns at TJ = 150oC Short Circuit Rating


    Original     		PDF HGTG30N60C3D 230ns 150oC O-247 HGTG30N60C3D 150oC. 1-800-4-HARRIS g30n60c3d G30N60 transistor 40411 40411 transistor TA49051 TA49014 No 42 G30N60C3D TA49053 N-channel enhancement 200V 60A

    65e9 transistor

    Abstract: transistor 75307D Transistor 65e8 SD MOSFET DRIVE DATASHEET 4468 8 PIN G40N60 RHR15120 equivalent 10n120bnd 76107d transistor 76121D emerson three phase dc motor driver service note
    Text: DUAL DIE POWER MOSFETs TM 1 1-888-INTERSIL or 321-724-7143 | | ID AMPS rDS ON VGE = 10V OHMS rDS(ON) VGE = 5V OHMS rDS(ON) VGE = 2.5V OHMS TYPE MS-012AA (SO-8) MO-153AA (TSSOP-8) 12 3.50 - 0.050 - Dual N RF1K49090 - 12 3.50 - 0.130 - Dual P RF1K49093 - 12


    Original     		PDF 1-888-INTERSIL MS-012AA MO-153AA RF1K49090 RF1K49093 RF1K49092 ITF87056DQT ITF87072DK8T ITF87008DQT RF1K49223 65e9 transistor transistor 75307D Transistor 65e8 SD MOSFET DRIVE DATASHEET 4468 8 PIN G40N60 RHR15120 equivalent 10n120bnd 76107d transistor 76121D emerson three phase dc motor driver service note

    HGTG30N60C3D

    Abstract: IGBTs g30n60c3d No 42 G30N60C3D TA49051 TA49053 LD26 RHRP3060
    Text: G30N60C3D Data Sheet December 2001 63A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diodes The G30N60C3D is a MOS gated high voltage switching device combining the best features of MOSFETs and bipolar transistors. The device has the high input


    Original     		PDF HGTG30N60C3D HGTG30N60C3D 150oC. TA49051. TA49053. 230ns 150oC IGBTs g30n60c3d No 42 G30N60C3D TA49051 TA49053 LD26 RHRP3060

    g30n60c3d

    Abstract: TA49051 G30N60 HGTG30N60C3D 63a 216 LD26 RHRP3060 TA49053
    Text: G30N60C3D Data Sheet January 2000 File Number 4041.2 63A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diodes Features The G30N60C3D is a MOS gated high voltage switching device combining the best features of MOSFETs and bipolar transistors. The device has the high input


    Original     		PDF HGTG30N60C3D HGTG30N60C3D 150oC. TA49051. TA49053. 230ns 150oC g30n60c3d TA49051 G30N60 63a 216 LD26 RHRP3060 TA49053

    g30n60c3

    Abstract: TA49051 igbt g30n60c3 HGTG30N60C3 LD26 RHRP3060 740 MOSFET TRANSISTOR g30n60
    Text: G30N60C3 S E M I C O N D U C T O R 63A, 600V, UFS Series N-Channel IGBT January 1997 Features • • • • • Package 63A, 600V at TC = 25oC 600V Switching SOA Capability Typical Fall Time . . . . . . . . . . . . . . 230ns at TJ = 150oC Short Circuit Rating


    Original     		PDF HGTG30N60C3 230ns 150oC O-247 HGTG30N60C3 150oC. g30n60c3 TA49051 igbt g30n60c3 LD26 RHRP3060 740 MOSFET TRANSISTOR g30n60

    G30N60

    Abstract: g30n60c3 TA49051 igbt g30n60c3 C110 HGTG30N60C3 LD26 U5025 40422
    Text: G30N60C3 in t e r r ii J a n u a ry . D ata S h eet m i 63A, 600V, UFS Series N-Channel IGBT Features The G30N60C3 is a MOS gated high voltage switching device combining the best features of MOSFETs and bipolar transistors. The device has the high input impedance of a


    OCR Scan     		PDF HGTG30N60C3 HGTG30N60C3 TA49051. O-247 G30N60 g30n60c3 TA49051 igbt g30n60c3 C110 LD26 U5025 40422