Untitled
Abstract: No abstract text available
Text: N AUER PHILT^S/B IS CRETE b'lE T> • bb53R31 0030646 T44 * A P X Philips Semiconductors Product Specification PowerMOS transistor BUK582-100A Logic level FET_ _ GENERAL DESCRIPTION N-channel enhancement mode logic level field-effect power
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bb53R31
BUK582-100A
OT223
Q030AS3
OT223.
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BUK582-100A
Abstract: No abstract text available
Text: N AUER p HT/l IPS/EISCRETE b'iE ]> • 1^53^31 ÜD3DÛ4Ô T44 * A P X Philips Semiconductors Product Specification PowerMOS transistor BUK582-100A Logic level FET_ _ GENERAL DESCRIPTION N-channel enhancement mode
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D3Dfl40
BUK582-100A
OT223
ID/100
bbS3131
D030flS3
BUK582-100A
OT223.
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1N4565
Abstract: IN4568 1n4573 45B4 IN4583A 1n4572 4566A
Text: SbE ] • 7 T ST E3 7 0 0 4 1 5 3 4 T44 ■ SGTH s 6 s-thohson S G S -T H O M S O N 1 N 4 5 6 5 ,A -> 1 N 4 5 8 4 ,A TEMPERATURE COMPENSATED ZENER DIODES ■ SEMICONDUCTOR MATERIAL : SILICON ■ TECHNOLOGY : LOCAL EPITAXY + GUARD RING ABSOLUTE RATINGS limiting values)
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7TSTE37
1N4565
IN4568
1n4573
45B4
IN4583A
1n4572
4566A
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VHE1404
Abstract: VHE1402 DDD135D VHE1401 VHE1403
Text: V SbE J> m m C R O S E M I CORP/ MICRO bllSTD? 000134*1 T44 •MfiL MICRO QUALITY / S E M IC O N D U C TO R . INC 10 Amp Epitaxial High Efficiency Rectifiers 50 Volt, 100 Volt, 150 Volt and 200 Volt VRRM Low Thermal Resistance Extremely Low Leakage at High Temperature
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D134T
T0220
Tj-25Â
VHE1404
VHE1402
DDD135D
VHE1401
VHE1403
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ALP202
Abstract: NLT4532 4433619 crystal Outline T44 LV4124W NLT4532-S4R4 T44 diode
Text: Ordering number : EN6000 Monolithic Linear IC LV4124W Single-chip LCD panel driver IC Supports the ALP202 LCD panel Overview Package Dimensions The LV4124W is a LCD panel driver for use in lowtemperature polysilicon TFT LCDs that integrates an RGB decoder, a driver, and a timing controller in a single chip.
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EN6000
LV4124W
ALP202
LV4124W
SQFP-64
LV4124W]
NLT4532
4433619 crystal
Outline T44
NLT4532-S4R4
T44 diode
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PDF
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ALP304
Abstract: ALP202 ALP208 ALP210 NLT4532 sanyo lcd alp208 EN6001 ALP30 AL-P21 NLT4532-S3R6B
Text: Ordering number : EN6001 Monolithic Linear IC LV4126W Single-chip LCD panel driver IC Supports the ALP202 /304LCD panel Overview Package Dimensions The LV4126W is a LCD panel driver for use in lowtemperature polysilicon TFT LCDs that integrates an RGB decoder, a driver, and a timing controller in a single chip.
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EN6001
LV4126W
ALP202
/304LCD
LV4126W
ALP202/
ALP210
ALP208
ALP304
SQFP-64
ALP304
ALP208
ALP210
NLT4532
sanyo lcd alp208
EN6001
ALP30
AL-P21
NLT4532-S3R6B
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Untitled
Abstract: No abstract text available
Text: SCHOTTKY BARRIER DIODE EC10QS05 EC10QS06 1.1A/50~60V FEATURES o Miniature Size, Surface Mount Device 2.21087 1.8 .071) 5.31209) 4.7(.185) ° Low Forward Voltage Drop _ 4.7(.168)_ >(.169) ° Low Power Loss, High Efficiency , 0.2(.008) " 1 j“ 0.0(.000) d,-1
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EC10QS05
EC10QS06
EC10QS05
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RLD-78M35
Abstract: No abstract text available
Text: AIGaAs double-hetero visible laser diodes RLD-78M35 RLD-78P35 RLD-78N35 These were the world’s first mass-produced laser diodes that were manufactured by molecular beam epitaxy and introduced with the RLD-78MA and RLD-78PA laser diodes. These diodes were especially developed for products
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RLD-78M35
RLD-78P35
RLD-78N35
RLD-78MA
RLD-78PA
RLD-78M
RLD-78M35,
RLD-78P35,
720kHz
RLD-78M35
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OLD2202
Abstract: 1000 nm light emitting diode 910nm 5424D
Text: O K I electronic components OLP22Q2 GaAIAs Infrared Light Emitting Diode GENERAL DESCRIPTION TheOLD2202 is a superhigh-output GaAIAs infrared light emission diode sealed with an achromatic transparent epoxy resin. Its light emission wave peaks at 910 nm. The OLD2202 can be the most
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OLP22Q2
TheOLD2202
OLD2202
L7542M0
OLD22Q2
b7E424D
Ifm/100
b7S4S40
1000 nm light emitting diode
910nm
5424D
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Untitled
Abstract: No abstract text available
Text: FAST RECOVERY DIODE 30A/400V/trr:60nsec KSF30A40B FEATURES o Similar to T0-220AC Case o Ultra-Fast Recovery oLow Forward Voltage Drop O Low Power Loss, High Efficiency o High Surge Capability 5.47 .2I5> 5.43(2131 KSF30A.B D im esn io n s i n mm ( I n c h e s
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0A/400V/trr
60nsec
KSF30A40B
T0-220AC
KSF30A.
l5123
GGD22DE
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TAM25
Abstract: No abstract text available
Text: N-CHANNELIGBT WITH INTEGRAL DIODE Z C N 9150A DRAFT DATASHEET ISSUE A - DECEMBER 94 FEATURES * 500 Volt VDS * Integral Diode * Fast Switching APPLICATIONS * Compact Fluorescent Ballast ABSOLUTE MAXIMUM RATINGS at Tam^25°C unless otherwise slated PARAMETER
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N9150A
amif125Â
cH7Q57Ã
0Q1Q354
001G35S
TAM25
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VTR17D1
Abstract: No abstract text available
Text: Reflective Optoswitch VTR17D1, 17E1 Arrow Retro with Flying Leads PRODUCT DESCRIPTION This series of reflective optical switches com bines an infrared emitting diode IRED with an NPN phototransistor (VTR17D 1) or photodarlington (VTR 17E1) in a one piece, sealed, IR
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VTR17D1,
VTR17D
VTR16xx
VTR17D1
VTR17E1.
VTR17E1
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BAV21
Abstract: No abstract text available
Text: • bb53131 0[]2b30D ODfl HIAPX N AMER PHILIPS/DISCRETE b'lE 3> BAV18 to 21 J V GENERAL PURPOSE DIODES Silicon planar epitaxial diodes in DO-35 envelopes; intended for switching and general purposes in industrial equipment e.g. oscilloscopes, digital voltmeters and video output stages in colour television.
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bb53131
2b30D
BAV18
DO-35
BAV19
BAV20
BAV21
100ns
BAV21
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b427525
Abstract: nec ir receiver P1026
Text: DATA SHEET RECEIVER NDL5590P Series 150 fi m InGaAs AVALANCHE PHOTO DIODE WITH MULTIMODE FIBER INTERNAL PRE-AMPLIFIER DESCRIPTION NDL5590P Series is an InGaAs avalanche photo diode module with multimode fiber incorporating silicon pre amplifier 1C. It is designed as an optical receiver for fiber optic communications systems such as SDH, SONET,
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NDL5590P
GI-50/125
NDL5590P
b427525
nec ir receiver
P1026
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rhu 222
Abstract: 39300 2.5 m 34300 LA-3000 LA-3630 LA-3930 LA-73
Text: • 0008045 OOfi ■ R H M -f ^ — K /Lig ht Emitting Diodes LA -3000 Series LA-3000 Series High-Efficiency Numeric Displays i W i ^ ¿ É lU / D im e n s io n s U n it : m m G aP f f f l u t , 7.5m m , 1 ffiCO LED S S ^ ^ S T ' f o Th ese 1-digit LED num eric d isplays
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LA-3000
LA-730
LA-3630O
LA-3830O
LA-3430O
LA-3930O
0D0flD44
LA-3430
rhu 222
39300 2.5
m 34300
LA-3630
LA-3930
LA-73
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Untitled
Abstract: No abstract text available
Text: HARRIS SENICON] SECTOR CIS Ha r r is W SEMICONDUCTOR b6E D • M3Q2S71 Q05025H 413 « H A S HGTP6N40E1D HGTP6N50E1D 6A, 400V and 500V N-Channel IGBTs with Anti-Parallel Ultrafast Diodes December 1993 Packages Features JEDEC TO-220AB TOP VIEW • 6 Amp, 400 and 500 Volt
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M3Q2S71
Q05025H
HGTP6N40E1D
HGTP6N50E1D
O-220AB
00A/US
HGTP6N40E1D,
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35VW
Abstract: No abstract text available
Text: • 7AZAW OOOflOl? ■RHM K / L ig h t Emitting Diodes SLT-35 = S erie s SLT-35 Series J f¿ 7 > y 3 X 4 .5 m m Triangular Lamps 1 L E D 5J « y 0 / D im e n s io n s (U n it: mm) S L T - 3 5 v U —X t t , f l i t * t ^ t C G a P | g 3 X 4 . 5 m m O ~ ^ j2 H ^
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SLT-35
SLT-35
Q00flQ23
35VW
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Philips FA 261
Abstract: BAV18 BAV21 CECC BAV19 BAV20 BAV21
Text: •I bbS3^31 □□2t.3DD OOfl HIAPX _ _ N ÀMER PHILIPS/DISCRETE b=!E » _ _ _ _ _ _ _ _ _ BAV18 to 21 A_ _ _ _ _ _ GENERAL PURPOSE DIODES Silicon planar epitaxial diodes in DO-35 envelopes; intended for switching and general purposes In industrial equipment e.g. oscilloscopes, digital voltmeters and video output stages in colour television.
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002b300
BAV18
DO-35
BAV19
BAV20
BAV21
Philips FA 261
BAV21 CECC
BAV21
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IXGH32N60AU1
Abstract: No abstract text available
Text: HiPerFAST IGBT with Diode IXGH 32N60AU1 IXGH 32N60AU1S vCES ^C25 v CE sat Combi Pack t Symbol Test C onditions V yces Tj = 25°C to 150°C 600 V v CGR Tj = 25°C to 150°C; RQE= 1 MQ 600 V VGES Continuous ±20 V V GEM Transient ±30 V ^C25 Tc = 25°C ^C90
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32N60AU1
32N60AU1S
4b6b22b
IXGH32N60AU1
IXGH32N60AU1S
4bflb22b
0003bQb
IXGH32N60AU1
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P77 transistor
Abstract: 1.5 j63 .15 j63 BZ15 ECG5016A l 9113 J4 81 diode
Text: ,z= i-s L-J =7 f .- an AMP company * z z - = = Radar Pulsed Power Transistor, 0.85W, 2ms Pulse, 20% Duty PHI 214-0.851 1.2 - 1.4 GHz Features NPN Silicon Microwave Power Transistor Common Emitter Configuration Broadband Class A Operation Matrix Geometry
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ECG5016A
PH1214-
P77 transistor
1.5 j63
.15 j63
BZ15
ECG5016A
l 9113
J4 81 diode
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MC1648
Abstract: BR504 MV1401 MC12012 MV1404 MC12148 MV2106 MV2115 variable inductor values for 10MHz- 100MHz oscillator Transistor t30 motorola
Text: MOTOROLA Consider MC12148 for New Designs LIFETIME BUY The MC1648 requires an external parallel tank circuit consisting of the inductor L and capacitor (C). For Maximum Performance QL ≥ 100 at Frequency of Operation. A varactor diode may be incorporated into the tank circuit to provide a
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MC1648
MC12148
MC1648
BR1334
MC1648/D
BR504
MV1401
MC12012
MV1404
MV2106
MV2115
variable inductor values for 10MHz- 100MHz oscillator
Transistor t30 motorola
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Untitled
Abstract: No abstract text available
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Darlington Transistors PNP Silicon MPSÄ75 MPSA77 COLLECTOR 3 EMITTER 1 MAXIMUM RATINGS Symbol Rating Collector-Emitter Voltage VCES Em itter-Base Voltage MPSA7S MPSA77 Unit -40 -60 Vdc Vebo -10 Vdc Collector Current — Continuous
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MPSA77
00-1K-2K
-5K-10K
MPSA75
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2N3904 TRANSISTOR using darlington amplifier
Abstract: tuned amplifier ML1490 T376 mc1490 ML1350 2N3904 2N3906 MC1490P ML1490PP
Text: ML1490 RF/IF/Audio Amplifier Wideband Amplifier With AGC Legacy Device: Motorola MC1490 The ML1490 is an integrated circuit featuring wide–range AGC for use in RF/IF amplifiers and audio amplifiers. 8 • High Power Gain: 50 dB Typ at 10 MHz 45 dB Typ at 60 MHz
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ML1490
MC1490
ML1490
MC1490P
ML1490PP
ML1350
2N3904 TRANSISTOR using darlington amplifier
tuned amplifier
T376
mc1490
2N3904
2N3906
MC1490P
ML1490PP
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910kHz
Abstract: MC1490P ML1490 ML1350 2N3904 2N3906 MC1490 ML1490PP MC14-9
Text: ML1490 RF/IF/Audio Amplifier Wideband Amplifier With AGC Legacy Device: Motorola MC1490 The ML1490 is an integrated circuit featuring wide–range AGC for use in RF/IF amplifiers and audio amplifiers. 8 • High Power Gain: 50 dB Typ at 10 MHz 45 dB Typ at 60 MHz
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ML1490
MC1490
ML1490
MC1490P
ML1490PP
ML1350
910kHz
MC1490P
2N3904
2N3906
MC1490
ML1490PP
MC14-9
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