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    T2A 250 V Search Results

    T2A 250 V Result Highlights (1)

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    MG250V2YMS3 Toshiba Electronic Devices & Storage Corporation N-ch SiC MOSFET Module, 1700 V, 250 A, 2-153A1A Visit Toshiba Electronic Devices & Storage Corporation
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    T2A 250 V Price and Stock

    PSP Products Inc SPT478-T2A-250V

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    DigiKey SPT478-T2A-250V Bag 25
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    SPC Multicomp MST 2A 250V

    Fuse, Pcb, 2A, 250V, Slow Blow; Fuse Current:2A; Voltage Rating Vac:250Vac; Product Range:-; Voltage Rating Vdc:-; Blow Characteristic:Slow Blow; Fuse Case Style:Radial Leaded; Breaking Capacity Current Ac:100A; Lead Length:22Mm Rohs Compliant: Yes |Multicomp Pro MST 2A 250V
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    Newark MST 2A 250V Bulk 134,664 1
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    SPC Multicomp MCMET 2A 250V

    Fuse, Pcb, 2A, 250V, Slow Blow; Fuse Current:2A; Voltage Rating Vac:250Vac; Product Range:-; Voltage Rating Vdc:-; Blow Characteristic:Slow Blow; Fuse Case Style:Radial Leaded; Breaking Capacity Current Ac:35A; Diameter:8.35Mm Rohs Compliant: Yes |Multicomp Pro MCMET 2A 250V
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    Newark MCMET 2A 250V Bulk 10
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    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Bristol Electronics T2A 250V 100 1
    • 1 $6.552
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    Littelfuse Inc T2A250V

    ELECTRONIC COMPONENT
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    Quest Components T2A250V 80
    • 1 $8.775
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    T2A 250 V Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    transistor t2a

    Abstract: NPN transistor 2n2222A st 2n 2907a ZTX310 ZDT- 5V BSV27 J 2N2369 ZTX312 DATA ZTX313 DATA BSV23
    Text: SILICON TRANSISTORS Planar Epitaxial High Speed Switching n-p-n Characteristics Maximum Ratings Type No. v CBO VCER Vebo Ptot 25°C smb. fT min. Storajje Time ts (i nax.) at lc mA MHz nS 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 20 150 150 10 200 200


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    BSY95A ZTX310, BSV23 ZTX311 BSV24 ZTX312, BSV25 ZTX313, BSV26 ZTX314, transistor t2a NPN transistor 2n2222A st 2n 2907a ZTX310 ZDT- 5V BSV27 J 2N2369 ZTX312 DATA ZTX313 DATA PDF

    transistor t2a

    Abstract: 2n2206 TRANSISTOR ztx312 transistor 2N2475 N706A BSX12 2N2206 J 2N2369 BSV24 BSV25
    Text: SILICON TRANSISTORS Planar Epitaxial High Speed Switching n-p-n Characteristics M axim um Ratings Type No. v CBO VCER Vebo P to t 25°C smb. fT min. Storajje Time t s ( i nax.) at l c mA MHz nS 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 20 150 150 10 200


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    BSY95A ZTX310, BSV23 ZTX311 BSV24 ZTX312, BSV25 ZTX313, BSV26 ZTX314, transistor t2a 2n2206 TRANSISTOR ztx312 transistor 2N2475 N706A BSX12 2N2206 J 2N2369 PDF

    2n222a

    Abstract: CV7644 ZTX326 2n3600 CV7371 CV7373 ZT80 ZT83 ZT1481 ZT86
    Text: ZT80-ZT180 Series— Truly general purpose complementary n-p-n and D-n-p transistors featuring nigh performance, high reliability and low cost 10mA The diagram shows the wide range of applications for which the TO-18 encapsulated ZT80 Series-ZT180 Series vCE SAT 0.3


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    ZT80-ZT180 100mA Series-ZT180 ZT110-ZT280 CV7373) CV7644) CV7371) CV7372) ZT183. ZT184 2n222a CV7644 ZTX326 2n3600 CV7371 CV7373 ZT80 ZT83 ZT1481 ZT86 PDF

    ZT2120

    Abstract: ZT43 ZT1702 100-C ZT1479 ZT1480 ZT1481 ZT1482 ZT1483 ZT1484
    Text: SILICON TRANSISTORS Power n-p-n Maximum Ratings Type No. v CBO v CEO(sus) Characteristics Dissipation Watts Ic fa Typical R (sat> (max.) hFE Jedec Outline volts volts amps •ZT1479 ZT1480 ZT1481 ZT1482 ZT1483 ZT1484 ZT1485 ZT1486 ZT1487


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    100-C ZT1479 ZT1480 ZT1481 ZT1482 ZT1483 ZT1484 ZT110 ZT119 2N929 ZT2120 ZT43 ZT1702 PDF

    2n3866 sos

    Abstract: 2n4041 2N4127 BFS98 2n3733 BFS96 BFS97 BSV33 ZT180 ZT181
    Text: SILICON TRANSISTORS Planar Medium Power and Switching p-n-p Maximum Ratings Type No. v CBO v CEO(sus) Ve b o Characteristics ^tot at 25°C amb. mW VCE(sat) max. volts volts volts volts BFS96 BFS97 B FS98 -6 0 -6 0 -8 0 -3 0 -4 0 -6 0 -5 -5 -5 500 500 500


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    BFS96 BFS97 BFS98 -150t BFS59-61 ZTX510 BSV33 2n3866 sos 2n4041 2N4127 2n3733 ZT180 ZT181 PDF

    CV7753

    Abstract: ZT1701 CV7644 ZT1483 ZT187 CV7371 CV7373 ZT80 ZT83 ZT84
    Text: ZT80-ZT180 Series— Truly general purpose complementary n-p-n and D-n-p transistors featuring nigh performance, high reliability and low cost 10mA The diagram shows the wide range of applications for which the TO-18 encapsulated ZT80 Series-ZT180 Series vCE SAT 0.3


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    ZT80-ZT180 100mA Series-ZT180 ZT110-ZT280 CV7373) CV7644) CV7371) CV7372) ZT183. ZT184 CV7753 ZT1701 CV7644 ZT1483 ZT187 CV7371 CV7373 ZT80 ZT83 ZT84 PDF

    ZT2120

    Abstract: 2N2475 100-C ZT1479 ZT1480 ZT1481 ZT1482 ZT1483 ZT1484 ZT1485
    Text: SILICON TRANSISTORS Power n-p-n Maximum Ratings Type No. v CBO v CEO(sus) Characteristics Dissipation Watts Ic fa Typical R(sat> (max.) hFE Jedec Outline volts volts amps •ZT1479 ZT1480 ZT1481 ZT1482 ZT1483 ZT1484 ZT1485 ZT1486 ZT1487


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    100-C ZT1479 ZT1480 ZT1481 ZT1482 ZT1483 ZT1484 BFS36 2N930 BFS37 ZT2120 2N2475 ZT1485 PDF

    transistor t2a 82

    Abstract: ZT1482 ZT1484 2N2223 t2a transistor ZT1490 n3055 2N3055 TRANSISTOR 2n3055 2N3440
    Text: SILICON TRANSISTORS High Voltage n-p-n The transistors listed in the table below have maximum coliector-emitter voltage ratings of 100 volts or higher and may therefore be used in applications where high voltages are encountered. Further information on these transistors can be found on the page indicated in the last column of the table, or on request from Ferranti Ltd.


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    ZT1480 ZT1482 ZT1484 ZT1486 ZT1488 ZT1490 2N3055 2N3439 2N3440 2N3441 transistor t2a 82 2N2223 t2a transistor n3055 TRANSISTOR 2n3055 PDF

    BFS98

    Abstract: BSV33 2N2475 2N4127 BFS96 BFS97 ZT180 ZT181 ZT182 ZT183
    Text: SILICON TRANSISTORS Planar Medium Power and Switching p-n-p Maximum Ratings Type No. v CBO v CEO(sus) Ve b o Characteristics ^tot at 2 5°C amb. mW VCE(sat) ^FE Ic BO at max. volts h min. at >0 mA Outline Draw­ ing •c mA ■ b mA min. max. -1 5 0 -1 5 0


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    BFS96 BFS97 BFS98 -150t BFS59-61 ZTX510 BSV33 BFS36 2N930 BFS37 2N2475 2N4127 ZT180 ZT181 ZT182 ZT183 PDF

    N2222

    Abstract: 2N222A 2N222 2N222-A 2N2708 2n3600 N222 BFS59 BFS60 BFS61
    Text: SILICON TRANSISTORS Planar Medium Power and Switching n-p-n M axim u m Ratings Type No. Characteristics VcBO v CEO Vebo •c (pk) volts volts volts A B F S 59 B F S 60 BFS61 B FX84 BFX8S B F Y 50 BFY51 B FY52 ZT80 ZT81 ZT82 ZT83 ZT84 ZT 8 6 ZT 8 7 ZT88 ZT89


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    BFS59 BFS60 BFS61 BFS96-98 BFX84 2N3571 2N3572 2N3600 at60MHz tat200 N2222 2N222A 2N222 2N222-A 2N2708 N222 PDF

    2N222A

    Abstract: N2222 zs90 2N222 BFS61 ZS150 2n3600 BFS59 2N222-A BFX84
    Text: SILICON TRANSISTORS Planar Medium Power and Switching n-p-n Maximum Ratings Type No. Characteristics VcBO v CEO Vebo •c (pk) volts volts volts A BFS59 BFS60 BFS61 BFX84 BFX8S BFY50 BFY51 BFY52 ZT80 ZT81 ZT82 ZT83 ZT84 ZT86 ZT87 ZT88 ZT89 ZT90 ZT91 ZT92


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    BFS59 BFS60 BFS61 BFS96-98 BFX84 KS77B KS78B 2N222A N2222 zs90 2N222 ZS150 2n3600 2N222-A PDF

    N2222

    Abstract: 2n222 2n222a ZTX326 BFS59 BFS60 BFS61 BFX84 BFY50 BFY51
    Text: SILICON TRANSISTORS Planar Medium Power and Switching n-p-n M axim u m Ratings Type No. Characteristics VcBO v CEO Vebo •c (pk) volts volts volts A B F S 59 B F S 60 BFS61 B FX84 BFX8S B F Y 50 BFY51 B FY52 ZT80 ZT81 ZT82 ZT83 ZT84 ZT 8 6 ZT 8 7 ZT88 ZT89


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    BFS59 BFS60 BFS61 BFS96-98 BFX84 BFS36 2N930 BFS37 2N2605 BFS36A N2222 2n222 2n222a ZTX326 BFY50 BFY51 PDF

    2n222 TRANSISTOR

    Abstract: N2222 2n222a transistor 2n222a 2n222A TRANSISTOR n3055 2n222a npn transistor 2N222-A 2N222 ZT1482
    Text: SILICON TRANSISTORS High Voltage n-p-n T h e transistors listed in the table b elo w have m axim um coliecto r-em itter voltage ratings o f 1 0 0 volts or higher and m ay therefore be used in applications w here high voltages are encountered. Further inform ation on these transistors can be found on the page indicated in the last colum n of the table, or on request fro m Ferranti Ltd.


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    ZT1480 ZT1482 ZT1484 ZT1486 ZT1488 ZT1490 2N3055 2N3439 2N3440 2N3441 2n222 TRANSISTOR N2222 2n222a transistor 2n222a 2n222A TRANSISTOR n3055 2n222a npn transistor 2N222-A 2N222 PDF

    Untitled

    Abstract: No abstract text available
    Text: MPD-65 65W Dual Output Medical Type ¡ ¡½ E ¡E ¡E ¡E ¡E ¡E ¡E ¡E series Features : Universal AC input / Full range £g Low leakage current <250 A Protections: Short circuit / Overload / Over voltage Cooling by free air convection Medical safety approved MOPP level


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    MPD-65 45KHz MPD-65A MPD-65B 18CFM MPD-65-SPEC PDF

    Untitled

    Abstract: No abstract text available
    Text: MPS-45 45W Single Output Medical Type series ¡½ Features : ¡EUniversal AC input / Full range ¡ Low leakage current <250£gA E ¡ Protections: Short circuit / Overload / Over voltage E ¡ Cooling by free air convection E ¡E ¡E Medical safety approved MOPP level


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    MPS-45 45KHz MPS-45-5 MPS-45-7 MPS-45-12 MPS-45-13 MPS-45-15 MPS-45-24 MPS-45-27 PDF

    NFV610

    Abstract: No abstract text available
    Text: EMI SUPPRESSION FILTERS fo r HIGH SPEED DIGITAL APPLICATIONS NFV610 Series This high perform ance noise suppression filter utilizes a unique circuit design and a total com ponents concept to provide exceptional perform ance in high speed, high im pedance digital signal lines. It uses considerably more


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    NFV610 compon-655 150MHz 50SJI 50Q-3KO PDF

    2N222A

    Abstract: ZT1702 N2222 ZT1483 ZT1701 2N2270 equivalent 2n3600 ZT280 ZT1482 CV7373
    Text: ZT80-ZT180 Series—Truly general purpose complementary n-p-n and D-n-p transistors featuring nigh performance, high reliability and low cost 10mA 100mA T h e diagram show s th e w id e range o f applications for w h ic h th e T O -1 8 encapsulated Z T 8 0 S e rie s -Z T 1 8 0 Series


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    ZT80-ZT180 100mA Series-ZT180 ZT110-ZT280 CV7373) CV7644) CV7371) CV7372) ZT183. ZT184 2N222A ZT1702 N2222 ZT1483 ZT1701 2N2270 equivalent 2n3600 ZT280 ZT1482 CV7373 PDF

    2n222a

    Abstract: ZS106 2n222a npn transistor ZS90 N2222 2N2223 transistor 2n222a n3055 ZS132 ZT1482
    Text: SILICON TRANSISTORS High Voltage n-p-n T h e transistors listed in the table b elo w have m axim um coliecto r-em itter voltage ratings o f 1 0 0 volts or higher and m ay therefore be used in applications w here high voltages are encountered. Further inform ation on these transistors can be found on the page indicated in the last colum n of the table, or on request fro m Ferranti Ltd.


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    ZT1480 ZT1482 ZT1484 ZT1486 ZT1488 ZT1490 2N3055 2N3439 2N3440 2N3441 2n222a ZS106 2n222a npn transistor ZS90 N2222 2N2223 transistor 2n222a n3055 ZS132 PDF

    2N3866 pin diagram

    Abstract: CV7753 2N4429 BFS98 CV7644 ferranti 2N4041 ZT280 CV7371 CV7373
    Text: ZT80-ZT180 Series—Truly general purpose complementary n-p-n and D-n-p transistors featuring nigh performance, high reliability and low cost 10mA 100mA T h e diagram show s th e w id e range o f applications for w h ic h th e T O -1 8 encapsulated Z T 8 0 S e rie s -Z T 1 8 0 Series


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    ZT80-ZT180 100mA Series-ZT180 ZT110-ZT280 CV7373) CV7644) CV7371) CV7372) ZT183. ZT184 2N3866 pin diagram CV7753 2N4429 BFS98 CV7644 ferranti 2N4041 ZT280 CV7371 CV7373 PDF

    BCW23

    Abstract: BFS98 ZTX107 2N3866 pin diagram 2N4127 2N3707 2N929 BC107 BC108 BCW20
    Text: E-Line Transistors Applications C h a rt SILICON TRANSISTORS 10uA 100mA 1mA 10mA 100mA 1A The wide diversity of applications for which E-Une plastic encapsulated transistors are suitable is shown on the diagram. Additional types designed for more specialized purposes are listed


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    ZTX330, ZTX331, BCW20 BCW22 2N3707 2N929 ZTX107 ZTX108 ZTX1I09 BC107 BCW23 BFS98 2N3866 pin diagram 2N4127 BC108 PDF

    ZT1483

    Abstract: ZT1701 BCW23 2N929 ZT2120 2N2475 BCW21 2N3707 BC107 BC108
    Text: E-Line Transistors Applications C h a rt SILICON TRANSISTORS 10uA 100mA 1mA 10mA 100mA 1A The wide diversity of applications for which E-Une plastic encapsulated transistors are suitable is shown on the diagram. Additional types designed for more specialized purposes are listed


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    ZTX330, ZTX331, BCW20 BCW22 2N3707 2N929 ZTX107 ZTX108 ZTX1I09 BC107 ZT1483 ZT1701 BCW23 ZT2120 2N2475 BCW21 BC108 PDF

    2N4041

    Abstract: 2N4429 BFS98 2N3632 2N4127 CV7644 J 2N2222A CV7371 CV7373 ZT80
    Text: ZT80-ZT180 Series—Truly general purpose complementary n-p-n and D-n-p transistors featuring nigh performance, high reliability and low cost 10mA 100mA T h e diagram show s th e w id e range o f applications for w h ic h th e T O -1 8 encapsulated Z T 8 0 S e rie s -Z T 1 8 0 Series


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    ZT80-ZT180 100mA Series-ZT180 ZT110-ZT280 CV7373) CV7644) CV7371) CV7372) ZT183. ZT184 2N4041 2N4429 BFS98 2N3632 2N4127 CV7644 J 2N2222A CV7371 CV7373 ZT80 PDF

    167D

    Abstract: TB167D ph c24 zener diode amidon BN-61-202 ph c20 zener diode ph c13 zener diode ph c24 zener
    Text: July 13, 2012 TB167D#7 Frequency=30-512MHz Pout=100W Gain=30dB Vds=28Vdc Idq=0.4+0.8A Efficiency=38 to 50% LQ801>LB501A PH: 805 484-4210 FAX:(805)484-3393 1110 Avenida Acaso, Camarillo CA 93012 www.polyfet.com July 13, 2012 40 100 35 80 30 60 25 40 20 20 100


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    TB167D 30-512MHz 28Vdc LQ801 LB501A 28Vdc, 0R0J12AFX 167D ph c24 zener diode amidon BN-61-202 ph c20 zener diode ph c13 zener diode ph c24 zener PDF

    TB235

    Abstract: No abstract text available
    Text: Juune 11, 20144 T TF235 Frequenccy=30-5122 MHz Pout=100W Gain= = 19-21.5 dB Vd ds=28Vdc Id dq=1.2A Efficiency= 48-551% L LR2401 PH: 8805 484-4210 FAX:(805)48 84-3393 1110 Avenida Acasso, Camarillo CA C 93012 ww ww.polyfet.com m June 11, 2014 180.0 22.5 135.0


    Original
    TF235 28Vdc LR2401 TB235 28Vdc, TCJE106M063R0100 EE-TK1V470P 100r18x335KV4E PDF