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    T046 TRANSISTOR Search Results

    T046 TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    2SC6026MFV Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=50 V / IC=0.15 A / hFE=120~400 / VCE(sat)=0.25 V / SOT-723 Visit Toshiba Electronic Devices & Storage Corporation
    TTC022 Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=12 V / IC=5 A / hFE=250~500 / VCE(sat)=0.14 V / tf=50 ns / PW-Mini Visit Toshiba Electronic Devices & Storage Corporation
    TTC020 Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=80 V / IC=4 A / hFE=100~200 / VCE(sat)=0.17 V / tf=70 ns / PW-Mini Visit Toshiba Electronic Devices & Storage Corporation
    2SA1213 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / VCEO=-50 V / IC=-2 A / hFE=70~240 / VCE(sat)=-0.5 V / PW-Mini Visit Toshiba Electronic Devices & Storage Corporation
    TPCP8515 Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=12 V / IC=5 A / hFE=250~500 / VCE(sat)=0.14 V / tf=50 ns / PS-8 Visit Toshiba Electronic Devices & Storage Corporation

    T046 TRANSISTOR Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    2N2310

    Abstract: 2N2102A 2N2351 2N1990 T046 2N2309 2N2243 2N2193B 2N2193A 2N2311
    Text: Transistors Cont. Discrete Devices Genera Purpose Amplifiers (Cont.) Electrical Characteristics @ 25° C Maximum Ratings Type Polarity PD Ambient mW 2N1990 2IM2008 VCB Volts VCE Volts NPN 600 100 _ NPN 175 110 VEB Volts 3 8 H f e @ 'C VçE(Sat) @ lc / 'B


    OCR Scan     		2N1990 2N2008 2N2102 2N2102A 2N2192 2N2192A 2N2192B 2N2193 150/151A 2N2352 2N2310 2N2351 T046 2N2309 2N2243 2N2193B 2N2193A 2N2311 PDF

    SP2605F

    Abstract: 2N2222A raytheon low noise transistors rf 2N4033 2N0720A 2N0718A 2n2907a raytheon 2N065 SP2605QF "dual TRANSISTORs" pnp npn
    Text: Small Signal Transistors Small Signal Transistors Hermetic Seal Raytheon Semiconductor offers a wide variety of Industry standard and sole source high reliability (JAN, JANTX, Product 2N0657* 2N0697* 2N0706* 2N0718A 2N0720A* 2N0910* 2N0918 2N0930 2N1131"


    OCR Scan     		2N0657* 2N0697* 2N0706* 2N0718A 2N0720A* 2N0910* 2N0918 2N0930 2N1131" 2N1132* SP2605F 2N2222A raytheon low noise transistors rf 2N4033 2N0720A 2n2907a raytheon 2N065 SP2605QF "dual TRANSISTORs" pnp npn PDF

    2N2270 equivalent

    Abstract: 2N2317 DH3725CN Q2T3725 motorola 2N2270 to-18 2N2008 2N1711 MOTOROLA 2N1990 MOTOROLA bfy76 2N2102
    Text: Transistors Cont. Discrete Devices Genera Purpose Amplifiers (Cont.) Electrical Characteristics @ 25° C Maximum Ratings Type Polarity PD Ambient mW 2N1990 2IM2008 VCB Volts VCE Volts NPN 600 100 _ NPN 175 110 VEB Volts 3 8 H f e @ 'C VçE(Sat) @ lc / 'B


    OCR Scan     		2N1990 2N2008 2N2102 2N2102A 2N2192 2N2192A 2N2192B 2N2193 150/15NPN BSY51 2N2270 equivalent 2N2317 DH3725CN Q2T3725 motorola 2N2270 to-18 2N1711 MOTOROLA 2N1990 MOTOROLA bfy76 PDF

    MHT5002

    Abstract: MHT5001 MHT5006 2sc113 D11C211B20 DC5501 DC6112B MD20 BSY47
    Text: SYMBOLS & CODES EXPLAINED 7. "N” Channel - SILICON FIELD EFFECT TRANSISTORS 8. GERMANIUM P N P 19 GERMANIUM NPN110. SILICON PNP 11. SILICON NPN High Power Transistors LINE No. k I B H H TYPE No. ABSOiLOTE MAX. RATIINGS Ä 2 5 C I I MIN. MAX Pc T6TT I DERATE FREE I'A E I


    OCR Scan     		NPN110. BSW88 200MSA 15On0 BSW89 BSX81 200M5A BSX81A MHT5002 MHT5001 MHT5006 2sc113 D11C211B20 DC5501 DC6112B MD20 BSY47 PDF

    Untitled

    Abstract: No abstract text available
    Text: - SELECTOR GUIDE DISCRETE BI-POLAR DEVICES Description CECC Ceramic Surface Mount Dual Transistor Dual device in CSM Ceramic Surface Mount Dual device in CSM 50004-017 50004-017 50004-017 50004-017 50004-133 50004-133 50003-021 50003-021 Polarity Package lc_cont


    OCR Scan     		PDF

    VX3866

    Abstract: DC5501 2SC665 BFS86 a209 CFN20C MHT5001 7A35 MHT5002 50kSA
    Text: SYMBOLS & CODES EXPLAINED 7. " N ” Channel - SILICON FIELD E F F E C T TRANSISTORS 8. GERMANIUM P N P 1 9 GERMANIUM NPN110. SILICON PNP 11. SILICON NPN High Power Transistors k I B LINE No. H H TYPE No. ABSOiLOTE M A X . RATIING S Ä 2 5 C I I M IN . M A X Pc T 6 T T


    OCR Scan     		NPN110. 50M5A MHT55 50MSA MHT5551 MHT5552 MHT5553 MHT5554 MHT5555 MHT5556 VX3866 DC5501 2SC665 BFS86 a209 CFN20C MHT5001 7A35 MHT5002 50kSA PDF

    2n3910

    Abstract: 2N3914 2n3219 2N4260 2N2708 2N3218 2N4209 2N915 2N2004 2N2333
    Text: Discrete Devices Transistors Cont. Choppers M axim um Ratings Polarity PD Ambient h f e @ >c VCE V e B Volts Volts Min/Max m A II Type Electrical Characteristics @ 25° C V c E (S a t) @ Ic/lß m A/m A mV — 2.0 rd@l B mA Ohms Cob mA Package pF M ax 2N 943


    OCR Scan     		2N943 T0-18 2N2004 2N2333 2N2944 2N2945 2N2945A 2N2946 2N2946A 2N2865 2n3910 2N3914 2n3219 2N4260 2N2708 2N3218 2N4209 2N915 PDF

    2N3914

    Abstract: 2n3219 2N4260 2N3910 2n3914 equivalent 2N3913 2N697 equivalent 2N915 BFY39 BSY39
    Text: Discrete Devices Transistors Cont. Choppers Maximum Ratings Polarity PD Am bient h f e @>c VCE V e B Volts Volts M in/M ax mA II Type Electrical Characteristics @ 25° C VcE (S at) @ Volts m A /m A mV — 2.0 rd@lB mA Ohms Cob mA Package pF Max 2N943 PNP


    OCR Scan     		2N943 T0-18 2N2004 2N2333 2N2944 2N2945 2N2945A 2N2946 2N2946A BSY51 2N3914 2n3219 2N4260 2N3910 2n3914 equivalent 2N3913 2N697 equivalent 2N915 BFY39 BSY39 PDF

    MHT5002

    Abstract: ST 2N3053 D28A9 D11C211B20 DC5501 DC6112B MD20 MM4645 MT75 BFS86
    Text: SYMBOLS & CODES EXPLAINED 7. "N” Channel - SILICON FIELD EFFECT TRANSISTORS 8. GERMANIUM P N P 19 GERMANIUM NPN110. SILICON PNP 11. SILICON NPN High Power Transistors k I B LINE No. t - 40°c * - 45°C H H TYPE No. ABSOiLOTE M A X . RATIING S Ä 2 5 C I I M IN . M A X Pc T 6 T T


    OCR Scan     		NPN110. USAF520ES070M 2N1508 50M5A 13On0 32On0 600di 2N1509 MHT5002 ST 2N3053 D28A9 D11C211B20 DC5501 DC6112B MD20 MM4645 MT75 BFS86 PDF

    2SC114 transistor

    Abstract: transistor 2SC114 2SC114 BSS43 D28A9 FZJ 101 FZJ 131 VX3866 MHT5001 usaf516es047m
    Text: SYMBOLS & CODES EXPLAINED 7. "N” Channel - SILICON FIELD EFFECT TRANSISTORS 8. GERMANIUM P N P 19 GERMANIUM NPN110. SILICON PNP 11. SILICON NPN High Power Transistors k I B LINE No. H H TYPE No. ABSOiLOTE M A X . RATIING S Ä 2 5 C I I M IN . M A X Pc T 6 T T


    OCR Scan     		NPN110. PT6905A PT6905B PT6905C 100msa 100m5a MM2261 MM2262 MM2263 2SC114 transistor transistor 2SC114 2SC114 BSS43 D28A9 FZJ 101 FZJ 131 VX3866 MHT5001 usaf516es047m PDF

    2N2900

    Abstract: 2N4033 2N2897 2N2898 2N2899 2N3019 2N3020 2N3036 2N3053 2N3056
    Text: Discrete Devices Transistors Cont. General Purpose Amplifiers (Cont.) Electrical Characteristics @ 25° C M axim um Ratings Type Polarity PD Ambient mW VCB Volts VCE Volts V eb Volts V c E (S a t) @ Ic / lß H f e >C Min/Max mA Volts ft MHz m A/m A Cob


    OCR Scan     		2N2897 2N2898 2N2899 2N2900 2N3019 2N3020 2N3036 2N3053 2N4031 2M4032 2N4033 2N3056 PDF

    transistor t05

    Abstract: N2907 N2907A 2N3040 t05 transistor 2N2927A 2N2280 2N3064 2N1921 2N3058
    Text: DIODE TRANSISTOR CO INC AM de ! 5flMfl35g D O D O m O 1 | o/ DIODE TRANSISTOR CD.i \ C. (201) 688-0400 • Telex: 139-385 • Outside NY & NJ area call TO LL FR EE 800-526-4581 FAX No. 201-575-5883 SILICON NPN LOW POWER TRANSISTORS DEVICES PKG DEVICES 2N327A


    OCR Scan     		5flMfl35g DETRdf\J515TQR 2N327A N328A 2N329A 2N330 2N726 2N863 2N939 2N945 transistor t05 N2907 N2907A 2N3040 t05 transistor 2N2927A 2N2280 2N3064 2N1921 2N3058 PDF

    bcy59 equivalent

    Abstract: BC140 equivalent 2N3913 BCY95 bc140-10 2n3019 equivalent 2N2708 2N328A BC109C NPN BCY22
    Text: Discrete Devices Transistors Cont. Choppers Maximum Ratings Polarity PD Ambient h f e @>c VCE V e B Volts Volts Min/Max mA II Type Electrical Characteristics @ 25° C V c E (S a t) @ Ic/lß mA/mA — Vq @Ib mV rd@l B Cob Package pF mA Ohms mA - 14 Max 2N943


    OCR Scan     		2N943 T0-18 2N2004 2N2333 2N2944 2N2945 2N2945A 2N2946 2N2946A 52N329A bcy59 equivalent BC140 equivalent 2N3913 BCY95 bc140-10 2n3019 equivalent 2N2708 2N328A BC109C NPN BCY22 PDF

    2n3219

    Abstract: 2N4260 RAYTHEON 2N3635 2N2004 2N2708 2N3910 2N3960 2N4261 2N915 2N2333
    Text: Discrete Devices Transistors Cont. Choppers M axim um Ratings Polarity PD Ambient h f e @ >c VCE V e B Volts Volts Min/Max m A II Type Electrical Characteristics @ 25° C V c E (S a t) @ Volts m A/m A mV — 2.0 rd@lB mA Ohms Cob mA Package pF M ax 2N 943


    OCR Scan     		2N943 T0-18 2N2004 2N2333 2N2944 2N2945 2N2945A 2N2946 2N2946A BT2946 2n3219 2N4260 RAYTHEON 2N3635 2N2708 2N3910 2N3960 2N4261 2N915 PDF

    2n4036

    Abstract: star delta connection circuit diagrams 2N3134 2N3135 2N3136 2N3250 2N3250A 2N3251A 2N3299 2N3300
    Text: Transistors Cont. Discrete Devices Medium Current, High-Speed Amplifiers (Cont.) Maxim um Ratings Type Polarity PD Ambient mW Electrical Characteristics @ 25° C V c b VCE V e b Volts Volts Volts V C E (Sat) lc /l„ H f e @ >C Min/Max mA Volts m A/m A


    OCR Scan     		2N3134 2N3135 2N3136 2N3250 2N3250A 2M3251 2N3251A 2N3486 2N3486A 2N3502 2n4036 star delta connection circuit diagrams 2N3299 2N3300 PDF

    18200T

    Abstract: germanium low power 150mW 460MSA 2N2097A C621 LM 18200T P1004 RT1116 2SC814 transistor C633
    Text: SY M B O L S & C O D ES E X P L A IN E D IN TYPE No. CROSS-INDEX & TECHNICAL SECTIONS A \ Indicators of separate manufacturers producing same type number non-JEDEC whose characteristics are not the same. i This manufacturer-identifying symbol (assigned by D.A.T.A.) is an integral part of the type number (in Type No. Cross Index,


    OCR Scan     		THP172 TIS11 TIX690 Pc-50mW; BVCBO-50V BVGSS-30V Yfs-800umhos 500mW; TIX881 TIX882 18200T germanium low power 150mW 460MSA 2N2097A C621 LM 18200T P1004 RT1116 2SC814 transistor C633 PDF

    ML101A

    Abstract: BD265A SP8412
    Text: SYMBOLS & CODES EXPLAINED IN TYPE No. CROSS-INDEX & TECHNICAL SECTIONS A \ Indicators of separate manufacturers producing same type number non-JEDEC whose characteristics are not the same. i This manufacturer-identifying symbol (assigned by D.A.T.A.) is an integral part of the type number (in Type No. Cross Index,


    OCR Scan     		PDF

    usaf517es060m

    Abstract: usaf516es047m usaf516es048m 2SC114 NS477 2SC814 TC236 2N5425 ST6130 ST62
    Text: SY M B O L S & C O D ES E X P L A IN E D IN TYPE No. CROSS-INDEX & TECHNICAL SECTIONS A \ Indicators of separate manufacturers producing same type number non-JEDEC whose characteristics are not the same. i This manufacturer-identifying symbol (assigned by D.A.T.A.) is an integral part of the type number (in Type No. Cross Index,


    OCR Scan     		PT6905A PT6905B PT6905C 100msa 100m5a MM2261 MM2262 MM2263 usaf517es060m usaf516es047m usaf516es048m 2SC114 NS477 2SC814 TC236 2N5425 ST6130 ST62 PDF

    2N2097A

    Abstract: 2N2096 LM 18200T ST62T 2SC814 2SC957 NS477 ST6600 ST6130 ST62
    Text: SYMBOLS & CODES EXPLAINED IN T Y P E No. C R O S S -IN D E X & T E C H N IC A L S E C T IO N S A \ Indicators of separate manufacturers producing same type num ber non-JED EC whose characteristics are not the same. i This m anufacturer-identifying symbol


    OCR Scan     		2N3633/52 ME8101 TIX895 1300M5A 1500MS 2500M5 2N2446 2N2379 3000MIA 4000Mt 2N2097A 2N2096 LM 18200T ST62T 2SC814 2SC957 NS477 ST6600 ST6130 ST62 PDF

    2n3019 equivalent

    Abstract: 2N3053 equivalent BC140 equivalent BC141 equivalent 2n930 equivalent bcy59 equivalent BC107 equivalent transistors 2N328A BC109C NPN bcy31
    Text: Discrete Devices Transistors Cont. General Purpose Amplifiers (Cont.) Electrical Characteristics @ 25° C Maximum Ratings Type Polarity PD Ambient mW 2N2897 NPN 2N2898 NPN NPN 2N2899 2N2900 2N3019 2N3020 2 N 3036 2N3053 NPN NPN NPN NPN NPN VCB Volts VCE


    OCR Scan     		2N2897 2N2898 2N2899 2N2900 2N3019 2N3020 2N3036 2N3053 2N329A BCY56 2n3019 equivalent 2N3053 equivalent BC140 equivalent BC141 equivalent 2n930 equivalent bcy59 equivalent BC107 equivalent transistors 2N328A BC109C NPN bcy31 PDF

    2SC814

    Abstract: 2N2097A ST6130 NS477 ST6600 TE2369 ST62 T018 TIS47 2n2097
    Text: SYMBOLS & CODES EXPLAINED IN T Y P E No. C R O S S -IN D E X & T E C H N IC A L S E C T IO N S A \ Indicators of separate manufacturers producing same type num ber non-JED EC whose characteristics are not the same. i This m anufacturer-identifying symbol


    OCR Scan     		2SA372 U7003 2SA446 450MI 450MSA 10Om0 2N960/46 2N962/46 460MI 460M5 2SC814 2N2097A ST6130 NS477 ST6600 TE2369 ST62 T018 TIS47 2n2097 PDF

    2N2097A

    Abstract: 2N2097 T046 ST82t NS476 FM1711 NS477 2SC814 2SC957 ST80T
    Text: SYMBOLS & CODES EXPLAINED IN T Y P E No. C R O S S -IN D E X & T E C H N IC A L S E C T IO N S A \ Indicators of separate manufacturers producing same type num ber non-JED EC whose characteristics are not the same. i This m anufacturer-identifying symbol


    OCR Scan     		200M5A 2N1962t 200MSA 2N1962/46T 200MSA 2N1963Ã 2N1963/46t 2N2096A 2N2097A 2N2097 T046 ST82t NS476 FM1711 NS477 2SC814 2SC957 ST80T PDF

    2N3053 NPN transistor

    Abstract: BT2222A 2N22 BT2222 2N2897 2N2898 2N2899 2N2900 2N3019 2N3020
    Text: Discrete Devices Transistors Cont. General Purpose Amplifiers (Cont.) Electrical Characteristics @ 25° C Maximum Ratings Type Polarity PD Ambient mW 2N2897 NPN 2N2898 NPN NPN 2N2899 2N2900 2N3019 2N3020 2 N 3036 2N3053 NPN NPN NPN NPN NPN VCB Volts VCE


    OCR Scan     		2N2897 2N2898 2N2899 2N2900 2N3019 2N3020 2N3036 2N3053 BT2946 2N2946 2N3053 NPN transistor BT2222A 2N22 BT2222 PDF

    PNP transistor A705

    Abstract: 2N1620 2sc768 2N1619 UD3008 BD264 BD265A MHT6414 SOT1156 MHT6311
    Text: SYMBOLS & CODES EXPLAINED 7. " N ” Channel - SILICON FIELD E F F E C T TRANSISTORS 8. GERMANIUM P N P 19 GERMANIUM NPN110. SILICON PNP 11. SILICON NPN High Power Transistors k I B LINE No. H H TYPE No. ABSOiLOTE M A X . RATIING S Ä 2 5 C I I M IN . M A X Pc T 6 T T


    OCR Scan     		NPN110. BD265 BD265A BD265B Y220b BD265L BD266L BD267L PNP transistor A705 2N1620 2sc768 2N1619 UD3008 BD264 MHT6414 SOT1156 MHT6311 PDF