T03 PACKAGE TRANSISTOR PIN DIMENSIONS Search Results

2N7805

Abstract: gw 340 diode t03 package transistor pin configuration 32N03 DTG2400 DTG-2400 2N2144A 2N1100 2N126 2n228 transistor
Contextual Info: CY7C1339 128K x 32 Synchronous-Pipelined Cache RAM Features The CY7C1339 I/O pins can operate at either the 2.5V or the 3.3V level; the I/O pins are 3.3V tolerant when V DDq=2.5V. * Supports 100-MHz bus fo r Pentium and PowerPC operations w ith zero w ait states

Contextual Info: i IT ¡electronics . SILICON EPITAXIAL NPN TRANSISTOR '• E - - Semelab Limited 2N5886 Hermetic T03 Metal Package. Designed For General Purpose, Switching and Power Amplifier Applications Screening Options Available

t03 package transistor pin dimensions

Abstract: 8830 transistor
Contextual Info: i IT ¡electronics . SILICON EPITAXIAL NPN TRANSISTOR '• E - - Semelab Limited 2N5886 Hermetic T03 Metal Package. Designed For General Purpose, Switching and Power Amplifier Applications Screening Options Available

Contextual Info: SILICON NPN POWER TRANSISTOR IT ¡electronics . Semelab Limited 2N3055 High Gain A t High Current. Hermetic T03 Metal package. Ideally Suited For General Purpose Switching Screening Options Available

Transistor 2n3055

Abstract: power transistor 2n3055 t03 package transistor pin dimensions tr 2n3055 2N3055 2n3055 pin
Contextual Info: SILICON NPN POWER TRANSISTOR IT ¡electronics . Semelab Limited 2N3055 High Gain A t High Current. Hermetic T03 Metal package. Ideally Suited For General Purpose Switching Screening Options Available

Contextual Info: ANALOG DEVICES Low Noise, Matched Dual PNP Transistor MAT03 FEATURES Dual Matched PNP Transistor Low Offset Voltage: 100 jiV max Low Noise: 1 n V /\ Hz @ 1 kHz max High Gain: 100 min High Gain Bandwidth: 190 MHz typ Tight Gain Matching: 3% max Excellent Logarithmic Conformance: rBE — 0.3 i l typ

6331-1

Abstract: t03 package transistor pin dimensions LAS6330P1 LAS 6330P1 LAS6331A za100 LAS-6330 6331P1 LAS6330 LAS6331P1
Contextual Info: A LAMBDA SWITCHING REGULATORS LAS 63 30 SERIES 3 AMP SWITCHING REGULATORS ABSOLUTE MAXIMUM RATINGS SYMBOL MAXIMUM UNITS 35 Volts I I O o PARAMETER Control C ircuit Voltage :< > FEATURES • • • • • DC to 100 kHz operation Adjustable output voltage

Contextual Info: N AMER PHILIPS/DISCRETE DbE D • PowerMOS transistor ODlHbflT 4 ■ BUZ83A T-Z°l-1 July 1987 QUICK REFERENCE DATA GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a metal envelope. This device is intended for use in Switched Mode Power Supplies

BUZ24

Contextual Info: N AMER PHILIPS/DISCRETE ObE D PowerMOS transistor • bb53cl31 OOmSTfl 1 ■ - BUZ24 r-3 i-is July 1987 GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a metal envelope. This device is intended for use in Switched Mode Power Supplies

Contextual Info: N AMER PHILIPS/DISCRETE ObE D PowerMOS transistor " • bbS3TBl 00147BH B BUZ54A T -2 ? -/3 July 1987 GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a metal envelope. This device is intended for use in Switched Mode Power Supplies

BUZ84

Contextual Info: N AMER PH IL IP S/ D I S CR E T E PowerMOS transistor ObE D • bb53T31 O O m b l b BU Z84 1 ■ July 1987 GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a metal envelope. This device is intended for use in Switched Mode Power Supplies

Contextual Info: _ _ _ _ _ _ PowerMOS transistor N AMER PHILIPS/DISCRETE B U Z 4 5 A _ ObE D ^ • bbSa^l O D m b S M J ’ ~ ~ T - 2? - i 3 July 1987 GENERAL DESCRIPTION N-channel enhancement moae field-effect power transistor in a metal envelope.

buz53a

Contextual Info: PowerMOS transistor N AMER PHILIPS/DISCRETE _BUZ53A_ DbE D • bbS3T31 DD14710 July 1987 QUICK REFERENCE DATA GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a metal envelope. This device is intended for use in Switched Mode Power Supplies

Contextual Info: PowerMOS transistor N AMER PHILIPS/DISCRETE BUZ83 ObE D • bb 53131 OOlMbfia 1 ■ r - 3 9 -!/ July 1987 GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a metal envelope. This device is intended for use in Switched Mode Power Supplies

BUZ84A

Abstract: D147D MC 140 transistor V103 "MC 140" transistor V103 TRANSISTOR
Contextual Info: PowerMOS transistor BUZ84A N AMER PHILIPS/DISCRETE — — — — 0L.E D • bbSBTBl QOIMTOB 5 — July 1987 QUICK REFERENCE DATA PARAMETER SYMBOL Drain-source voltage VDS Drain current d.c. Id Total power dissipation Ptot Drain-source on-state résistance

BUZ84

Abstract: t03 package transistor pin dimensions V103 TRANSISTOR V103 transistor t03 buz84 ma
Contextual Info: N AMER PH IL IPS/ DI SC RE TE ObE D P o w e rM O S tra n s is to r • ^53=131 QDlMblt 1 ■ B U Z 84 ^ - 5 ^ 1 3 July 1987 QUICK REFERENCE DATA PARAMETER SYMBOL Draln-source voltage VDS Drain current d.c. Id Total p*wer dissipation *tot Drain-source on-state resistance

DAC-08

Contextual Info: ANALOG DEVICES Lo/vNase, ^fetched dial R\P Transistor M FEATURES Dual Matched P NPTransistor Low Offset Voltage: 100 jiV max Low Noise: 1 nV/^H z @ 1 kHz max High Gain: 100 min High Gain Bandwidth: 190 M Hz typ Tight Gain M atching: 3% max Excellent Logarithmic Conformance: rBE — 0.3 i l typ

BUZ54A

Abstract: t03 package transistor pin dimensions T-39-13 transistor BUZ54 IEC134 T3913 C413N 4-10N
Contextual Info: N AMER PHI LI PS /D IS CR ET E übE D P o w e r M O S transistor " • ^53=131 0014724 S B U Z 54A T - 2 ^ -/3 July 1987 GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a metal envelope. This device is intended for use in Switched Mode Power Supplies

t03 package transistor pin configuration

Abstract: LAS8100P c5cs transistors,darlingtons LAS8101 t03 package transistor pin dimensions
Contextual Info: A LAM BDA INTERFACE DRIVERS LAS 8100 SERIES 3 AMP PEAK SWITCHING TRANSISTOR DRIVERS ABSOLUTE MAXIMUM RATINGS SYM BOL MAXIMUM UNITS Supply Voltage Vcc 26 Volts Logic Input Voltage V,N Vcc PARAM ETER FEATURES • • • • • Provides simple turn-on and turn-off

Contextual Info: PowerM OS transistor N AMER PHILIPS/DISCRETE _ BU Z63_J DbE D • hbSBTBl D014b33 T ■ July 1987 QUICK REFERENCE DATA GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a metal envelope. This device is intended for use in

VSK64

Abstract: LAS6350P1 LAS6351P1 6351P1 LAS-6351P1 LAS6351 LAS6350 LAS-6350P1 LAS-6351
Contextual Info: A LAMBDA SWITCHING REGULATORS LAS 6350 SERIES 5 AMP SWITCHING REGULATORS I ABSOLUTE MAXIMUM RATINGS FEATURES • • • • • D C to 100 kHz operation Adjustable output voltage Cycle-by-cycle current limit Internal thermal shutdown Inhibit/enable control pin

BUZ83A

Contextual Info: N AMER PHILIPS/DISCRETE OLE D • PowerMOS transistor hbS3T31 DOlMbfii 4 ■ BUZ83A T - n - i i July 1987 QUICK REFERENCE DATA GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a metal envelope. This device is intended for use in

BUZ84A

Contextual Info: PowerMOS transistor_ BUZ84A_ | N AUER PHILIPS/DISCRETE ObE D • bbSBTBl 0 0 m 7 0 3 5 ■ July 1987 GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a metai envelope. This device is intended for use in

vsk64

Abstract: S6380 LAS6381 LAS6381P1 LAS6380 12v dc to 12v ct 12v amplifier
Contextual Info: un INTEGRATED CIRCUITS LAS 6380 SERIES UNITRODE 8 AMP SWITCHING REGULATORS T-58-//-3/ FEATURES DESCRIPTION • • • • • The LAS 6380 Series are monolithic integrated circuits designed for fixed fre­ quency, pulse width modulated, switching converter applications such as step-down,