TTS3131 Search Results

Contextual Info: N AMER PHILIPS/DISCRETE BSE D btiSB^Sl QOlfl'in 4 BUV82 BUV83 r-23-13 SILICON DIFFUSED POWER TRANSISTORS High voltage, high speed switching npn power transistor in plastic SOT93 envelope, intended for use in converters, inverters, switching regulators, motor control systems and switching applications.

IN4752a

Abstract: 1N4742A 1N4728A 1N4729A 1N4730A 1N4731A 1N4732A 1N4733A 1N4734A 1N4761A
Contextual Info: N AMER PHILIPS/DISCRETE SSE D • bfaSîiai 0017373 3 I |1N4728A to 1N4761A :8A t< T-ll-13 VOLTAGE REGULATOR DIODES The series consits of 34 types with nominal working voltages ranging from 3.3 to 75 V. MECHANICAL DATA Fig. 1 DO-41 SOD66 . Dimensions in mm

BUZ84

Abstract: t03 package transistor pin dimensions V103 TRANSISTOR V103 transistor t03 buz84 ma
Contextual Info: N AMER PH IL IPS/ DI SC RE TE ObE D P o w e rM O S tra n s is to r • ^53=131 QDlMblt 1 ■ B U Z 84 ^ - 5 ^ 1 3 July 1987 QUICK REFERENCE DATA PARAMETER SYMBOL Draln-source voltage VDS Drain current d.c. Id Total p*wer dissipation *tot Drain-source on-state resistance

BUV83

Abstract: BUV82
Contextual Info: N AMER PHILIPS/DISCRETE SSE D • aoiöw m BUV82 BUV83 r - 3 3 -1 3 SILICON DIFFUSED POWER TRANSISTORS High voltage, high speed switching npn power transistor in plastic S O T 9 3 envelope, intended for use in converters, inverters, switching regulators, motor control systems and switching applications.

Contextual Info: i i N ANER P H I L I P S / D I S C R E T E SSE D i {□ □53=131 DQ175DI3 7 I 2N5088 2N5089 T - ^ - 2 1 SILICON PLANAR EPITAXIAL TRANSISTOR N-P-N small-signal transistor in plastic TO-92 envelope intended for low-noise stages in audio equipment. Complementary types are 2N5086/2N5087.

Contextual Info: • bbS3T31 QQ23ti2S 353 ■ APX BF994S N AP1ER PHILIPS/DISCRETE b7E D J V SILICON N-CHANNEL DUAL GATE MOS-FET Depletion type field-effect transistor in a plastic SOT143 microminiature envelope with source and substrate interconnected and intended fo r V H F applications in television tuners.

Contextual Info: • P hilips Sem iconductors Data sheet status Product specification date of issue October 1990 FEATURES • Short channel transistor with high ratio lYfSI/C15. • Low noise gain controlled amplifier to 1 GHz. DESCRIPTION Depletion type field-effect transistor

TXD10K40

Abstract: TXD10K60 BT1690 BT808 1N5004 TXD10H60 mp8706 TXC10K40 BSTC1026 BT13G
Contextual Info: N AMER PHILIPS/DISCRETE 86 BSE D • X'Ql-oX bbS3131 QOlbSbH 4 ■ General Information CROSS REFERENCE GUIDE INDUSTRY PART NUMBER PG. NEAREST EQUIV. NO. 0105-50 0204-50 0510-25 12F5 12F5R BLU52 BLU52 BLV97 BYX99-300 BYX99-300R 12F10 12F10R 12F20 12F20R 12F40

1045F

Abstract: IEC134 PBYR1035F PBYR1040F PBYR1045F
Contextual Info: PBYR1035F PBYR1040F PBYR1045F ft N AUER P H I L I P S / D I S C R E T E 2SE D E3 ^ 5 3 ^ 3 1 0052^43 T Q T -O Z - ~7 SCHOTTKY-BARRIER RECTIFIER DIODES Low-leakage platinum -barrier rectifier diodes in SOT-186 full-pack) plastic envelopes, featuring low forward voltage drop, low capacitance, and absence o f stored charge. T heir electrical isolation makes

J493

Abstract: BLX13 philips 3h1 ic hf 3487 4312 020 36620 VHF IF 70MHz
Contextual Info: N AMER PHILIPS/DISCRETE 860 01684 DbE D • ^53=131 D O ^ S E D T ~ 3 3 ' Ì 1 . BLX13 Jl H.F./V.H.F. POW ER TRANSISTOR N-P-N epitaxial planar transistor intended for s.s.b. in class-A and A B and in f.m. transmitting appli­ cations in class-C with a supply voltage up to 28 V, The transistor is resistance stabilized and tested