BFR540C
Abstract: No abstract text available
Text: SO T2 3 BFR540 NPN 9 GHz wideband transistor Rev. 6 — 13 September 2011 Product data sheet 1. Product profile 1.1 General description The BFR540 is an NPN silicon planar epitaxial transistor in a SOT23 plastic package. 1.2 Features and benefits
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BFR540
BFR540
BFR540C
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npd5564
Abstract: 2N4393 MOTOROLA 2sk194 2sk162 KE4393 2SK146 2sk162 hitachi 2SK147 NPD5566 FET package TO-71
Text: JUNCTION FET Item Number Part Number Manufacturer V BR GSS IDSS (V) (A) g,. VGS(Off) Min (S) Max Max (V) lass Max (A) Clsa Max (F) PD Max (W) Derate at (WrC) Toper Max (OC) Package Style N-Channel JFETs, (Cont'd) 5 10 2SK364 2SK366 2SK240 2SK431 2SK170 UC704
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2SK364
2SK366
2SK240
2SK431
2SK170
UC704
2SK194
ITE4091
ITE4091A
npd5564
2N4393 MOTOROLA
2sk162
KE4393
2SK146
2sk162 hitachi
2SK147
NPD5566
FET package TO-71
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Untitled
Abstract: No abstract text available
Text: SO T2 3 BFR540 NPN 9 GHz wideband transistor Rev. 6 — 13 September 2011 Product data sheet 1. Product profile 1.1 General description The BFR540 is an NPN silicon planar epitaxial transistor in a SOT23 plastic package. 1.2 Features and benefits
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BFR540
BFR540
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all transistor data sheet
Abstract: free download transistor data sheet zo 103 ma CATV amplifier transistor transistor equivalent table RF NPN POWER TRANSISTOR 2.5 GHZ philips satellite systems common emitter amplifier all ic data common collector amplifier circuit designing
Text: BFR540 NPN 9 GHz wideband transistor Rev. 05 — 1 September 2004 Product data sheet 1. Product profile 1.1 General description The BFR540 is an NPN silicon planar epitaxial transistor in a SOT23 plastic package. 1.2 Features • ■ ■ ■ High power gain
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BFR540
BFR540
all transistor data sheet
free download transistor data sheet
zo 103 ma
CATV amplifier transistor
transistor equivalent table
RF NPN POWER TRANSISTOR 2.5 GHZ
philips satellite systems
common emitter amplifier
all ic data
common collector amplifier circuit designing
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MARKING bs170
Abstract: No abstract text available
Text: A pril 1995 National Semiconductor” BS170 / MMBF170 N-Channel Enhancement Mode Field Effect Transistor General Deccription Features These N-channel enhancement mode field effect transistors are produced using Nationals proprietary, high cell density, DMOS technology. These products
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BS170
MMBF170
500mA
MMBF170
OT-23,
MARKING bs170
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transistor marking ra
Abstract: No abstract text available
Text: MMBF170LT1 CASE 318-07, STYLE 21 SOT-23 T0-236AB M AXIM UM RATINGS Rating Symbol Value Unit D ra in -S o u rce V o lta g e VD SS 60 Vdc D ra in G a te V o lta g e Vd g s 60 V dc G a te -S o u rce V olta g e — C o n tin u o u s - N o n -re p e titive <tp $ 50 /is)
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MMBF170LT1
OT-23
T0-236AB)
transistor marking ra
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226AA
Abstract: T0-226AA T0236AB T0226AA
Text: Sm all-Signal Small-Signal DMOS Transistors % T0-236AB SOT-23 T0-226AA (TO-92) 219
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T0-236AB
OT-23)
T0-226AA
226AA
T0-226AA
T0236AB
T0226AA
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marking 1d4
Abstract: No abstract text available
Text: DUAL ZENER DIODES COMMON ANODE, 300mW AZ23 SERIES CASE TYPE; T0-236AB (SOT-23) % Dynamic Resistance Zener Voltage*1* at lz - 5 m A Reverse Voltage at Ir = 100 nA VzV at lz = 5mA t = 1 kHz rg o D1 2.5 . 2.9 7 5 (<83) <500 - 9 . . -4 AZ23-C3 D2 2.8 . 3.2
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300mW)
T0-236AB
OT-23)
AZ23-C2V7
AZ23-C3
AZ23-C3V3
AZ23-C3V6
AZ23-C3V9
AZ23-C4V3
AZ23-C4V7
marking 1d4
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bc 7-25 pnp
Abstract: transistor bc 7-25 2N5245 transistor 2n3819 cross reference TO-266AA 2N3904 731 jFET Array BFR30 "cross reference" 2N5308 cross reference 266AA
Text: DISCRETE SEMICONDUCTORS IN D EX AND CROSS REFERENCE Industry Number 1N914 1N4148 1N4150 1N5229 1N5230 Type Diode Diode Diode Zener Zener Pinning 2 3 A A A A A NC NC NC NC K K K K NC K 7-29 7-29 7-29 7-30 7-30 A A A A A NC NC NC NC NC K K K K K 7-30 7-30 7-30
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1N914
1N4148
1N4150
1N5229
1N5230
1N5231
1N5232
1N5233
1N5234
1N5235
bc 7-25 pnp
transistor bc 7-25
2N5245 transistor
2n3819 cross reference
TO-266AA
2N3904 731
jFET Array
BFR30 "cross reference"
2N5308 cross reference
266AA
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MV2107
Abstract: MV2105* equivalent MMBV2109LT1 equivalent 4j diode MV2113 diode mv2105 MMBV2101LT1 MMBV2104 MV2103 MMBV2103LT1
Text: SILICON EPICAP DIODES . designed in the popular PLASTIC PA C KAG E for high volum e require ments of F M Radio and TV tuning and AFC, general frequency control and tuning applications; providing solid-state reliability in replacement of mechanical tuning methods.
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MV21XX
MMBV21XXLT1
1MV21
40Vdc
n/MV2109
MV2107
MV2105* equivalent
MMBV2109LT1 equivalent
4j diode
MV2113
diode mv2105
MMBV2101LT1
MMBV2104
MV2103
MMBV2103LT1
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Untitled
Abstract: No abstract text available
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Schottky Barrier Diodes BAT54LT1 These Schottky barrier diodes are designed tor high speed switching applications, circuit protection, and voltage clamping. Extremely low forward voltage reduces conduction loss. Miniature surface mount package is excellent for hand held and
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BAT54LT1
OT-23
T0-236AB)
DCH3A73
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MBT5551LT1
Abstract: MBT5551L T0236AB
Text: M O TO RO LA SEMICONDUCTOR TECHNICAL DATA High V oltage T ransistors NPN Silicon MMBT5550LT1 MMBT5551LT1* COLLECTOR 3 ‘M otorola Preferred D evice 2 MAXIMUM RATINGS EMITTER Symbol Value Unit Collector-Emitter Voltage Rating v C EO 140 Vdc Collector-Base Voltage
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MMBT5550LT1
MMBT5551LT1*
T0-236AB)
225rola
MBT5550LT1
MBT5551LT1
1N914
MBT5551LT1
MBT5551L
T0236AB
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KBL 103
Abstract: D0214AB D0-218AA D0218 T0263AB
Text: CASEDRAWINGS i\ i C NGi j i\j o i :c 0.034 0.86 0.028(0.71} DIA “T 0 .2 AC, :e i AM.y. 4 W ' t . I.sad ammeter is 0-026(0.66) tc -su fix't 0-023 (0 58) D0-2Q1AD -213AA (GL34) DQ-204AC (DO-15) H DQ-204AL (DO-41) D 0-213AB (GL41) 99 M D0-2Q4AP D 0-214AA (SMB)
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DQ-204AC
DO-15)
DQ-204AL
DO-41)
-213AA
0-213AB
0-214AA
D0-214AB
-214BA
-214AC
KBL 103
D0214AB
D0-218AA
D0218
T0263AB
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DO-219
Abstract: d0214ac D0-214AC D0214AC SMA D0204AL 204AL
Text: INTRODUCTION TO ZEN ER DIODES General S em iconductor's Zener Diodes are used as voltage regulators, voltage references and voltage suppressors against ESD threats. Pow er ratings range from 30 0m W to 2W and voltages range from 2.4V to 200V. Typical voltage tolerances are +5%, but tighter tolerances such as ±2% are available. These diodes are available in the
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DO-35
DO-41
OT-23
OD-323
OD-123
T0-236AB
OT-23)
DO-219
D0-214AC
DO-214AA
DO-219
d0214ac
D0-214AC
D0214AC SMA
D0204AL
204AL
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BT2369A
Abstract: No abstract text available
Text: MAXIM UM RATINGS Sym bol V a lu e Unit C o lle c to r -E m itte r V o lta g e Rating v CEO 15 Vdc C o lle c to r -E m itte r V o lta g e V CES 40 Vdc C o lle c to r-B a s e V o lta g e V cBO 40 Vdc E m itte r-B a s e V o lta g e Vebo 4.5 Vdc !C 200 m Adc Symbol
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MMBT2369LT1
MMBT2369ALT1*
OT-23
T0-236AB)
BT2369A
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1N52xx
Abstract: D0204AL T0-236AB D0-204Al T0236AB 204AL
Text: ZENER DIODE SERIES SUMMARY Pmn Device Package mW Zener Voltage Tolerances Zener Voltage Range (Volts) 10% 8% 3% Page 2% AZ23-yxx * T0-236AB (SOT-23) 2.4 . 51 C 64 DZ23-yxx * * TO-236AB (SOT-23) 2.4 . 51 C 72 MMBZ52xxy T0-236AB (SOT-23) 2.4 . 75 B C
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AZ23-yxx
DZ23-yxx
MMBZ52xxy
BZX84-yxx
BZT52-yxx
1N52xx-y
BZV55-yxx
BZX55-yxx
BZX79-yxx
MMSZ52xxy
1N52xx
D0204AL
T0-236AB
D0-204Al
T0236AB
204AL
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D0213AA
Abstract: D0204AL G3-64 DO-218AA D0-213AA DO-213AB MELF ITO-22QAB SMA DO-214AB MPG06 T0226AA
Text: C£ L >G e n e r a l v S e m ic o n d u c t o r PRODUCTPACKAGES . * % TO-22QAC TQ-220AB IT0-22QAC ITO-22QAB 10-263 D;i PAK .x« isUiilJS KBPM GBPC - W . GBPC T0-247AD GB1 wmm$& ^ % DFS % DO-218AA x ASC 00 DO-215AA (SMBG) 00-21 SAB (SMCG) •SPSSiM •
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ITO-22QAB
O-22QAC
TQ-220AB
IT0-22QAC
T0-247AD
DO-218AA
DO-215AA
DO-214AA
DO-214AB
DO-214AC
D0213AA
D0204AL
G3-64
DO-218AA
D0-213AA
DO-213AB MELF
ITO-22QAB
SMA DO-214AB
MPG06
T0226AA
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Untitled
Abstract: No abstract text available
Text: MAXIMUM RATINGS Symbol Value Unit C o lle cto r-E m itte r V o ltage v CEO 12 Vdc Collector-B ase Voltage VCBO 20 Vdc 'c 100 m A dc Rating C o lle ctor C u rrent — C o n tin u o u s BSV52LT1 CASE 318-07, STYLE 6 SOT-23 T0-236AB THERMAL CHARACTERISTICS
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BSV52LT1
OT-23
T0-236AB)
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