T00BL4L Search Results

Contextual Info: IBM0117800 IBM0117800M IBM0117800B IBM0117800P 2 M x 8 11/10 DRAM Features • 2,097,152 word by 8 bit organization • Single 3.3V ± 0 .3V or 5.0V ± 0.5V power supply • Standard Power SP and Low Power (LP) • 2048 Refresh Cycles - 32 ms Refresh Rate (SP version)

Contextual Info: IBM014445 IBM014445B 1M x 4 10/10 QUAD CAS EDO DRAM Features • Standard Power Low Power Dissipation 1,048,576 word by 4 bit organization - Active max - 95 mA / 80 mA (3.3V) - 85 mA / 70 mA (5.0V) QUAD CAS Parity Extended Data Out (Hyper Page) Mode - Standby Current: T T L Inputs (max)

Contextual Info: IBM11S1325LP IBM11S2325LP IBM11S1325LM IBM11S2325LM 1M/2M X 3 2 S O DIMM Module Features • 72-P in Sm all Outline D ual-ln -L ine M em o ry M odule • Perform ance: i -60 ! -6R -70 : W c ! RAS Access Tim e I 60ns ! 60ns 70ns tcAc ; CAS Access Tim e 15ns ! 17ns

Contextual Info: IBM0316409C IBM0316809C IBM0316169C 16Mbit Synchronous DRAM Features • High Performance: • Multiple Burst Read with Single Write Option CAS latency = 3 -10 -11 -12 -13 Units • Automatic and Controlled Precharge Command fcK Clock Frequency 100 91 83 77

Contextual Info: = = = = ¥ § = = • = 7= IB M 0 4 3 6 1 0 Q L A B IB M 0 4 1 8 1 O Q L A B Prelim inary 32K X 36 & 64K X 18 SRAM Features • 32K x 36 or 64K x 18 Organizations Common I/O Asynchronous Output Enable and Power Down Inputs • 0.5 Micron CMOS Technology • Synchronous Flow-Thru Mode Of Operation