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    Vishay Siliconix SUP50N03-5M1P-GE3

    MOSFET N-CH 30V 50A TO220AB
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    Vishay Intertechnologies SUP50N03-5M1P-GE3

    Trans MOSFET NCH 30V 50A 3Pin3Tab TO220AB (Alt: SUP50N03-5M1P-GE3)
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    SUP50N03 Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    SUP50N03-5M1P-GE3 Vishay Siliconix FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 30V 50A TO-220AB Original PDF

    SUP50N03 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    sup50n03

    Abstract: 557-538
    Text: SUP50N03-5m1P_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter configurations are included. When implemented in P-SPICE,


    Original     		SUP50N03-5m1P AN609, 31-May-10 sup50n03 557-538 PDF

    Untitled

    Abstract: No abstract text available
    Text: SUP50N03-5m1P Vishay Siliconix N-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 • TrenchFET Power MOSFET RDS(on) () ID (A) 0.0051 at VGS = 10 V 50d 0.0063 at VGS = 4.5 V 50d Qg (Typ.) 21.7 • 100 % Rg and UIS Tested • Material categorization:


    Original     		SUP50N03-5m1P O-220AB SUP50N03-5m1P-GE3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 PDF

    SUP50N03

    Abstract: SUP50N03-5m1P
    Text: SUP50N03-5m1P Vishay Siliconix N-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 RDS(on) (Ω) ID (A) 0.0051 at VGS = 10 V 50d 0.0063 at VGS = 4.5 V 50d • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET • 100 % Rg and UIS Tested


    Original     		SUP50N03-5m1P 2002/95/EC O-220AB SUP50N03-5m1P-GE3 18-Jul-08 SUP50N03 SUP50N03-5m1P PDF

    Untitled

    Abstract: No abstract text available
    Text: SPICE Device Model SUP50N03-5m1P www.vishay.com Vishay Siliconix N-Channel 30 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The sub-circuit model is extracted and optimized over the -55 °C


    Original     		SUP50N03-5m1P 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 PDF

    Untitled

    Abstract: No abstract text available
    Text: SUP50N03-5m1P Vishay Siliconix N-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 RDS(on) (Ω) ID (A) 0.0051 at VGS = 10 V 50d 0.0063 at VGS = 4.5 V 50d • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET • 100 % Rg and UIS Tested


    Original     		SUP50N03-5m1P 2002/95/EC O-220AB SUP50N03-5m1P-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 PDF

    SUP50N03-5m1P

    Abstract: No abstract text available
    Text: SPICE Device Model SUP50N03-5m1P Vishay Siliconix N-Channel 30 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C


    Original     		SUP50N03-5m1P 18-Jul-08 SUP50N03-5m1P PDF

    Untitled

    Abstract: No abstract text available
    Text: SUP50N03-5m1P Vishay Siliconix N-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 RDS(on) (Ω) ID (A) 0.0051 at VGS = 10 V 50d 0.0063 at VGS = 4.5 V 50d • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET • 100 % Rg and UIS Tested


    Original     		SUP50N03-5m1P 2002/95/EC O-220AB SUP50N03-5m1P-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 PDF

    SUP50N03

    Abstract: No abstract text available
    Text: SUP50N03-5m1P Vishay Siliconix N-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 RDS(on) (Ω) ID (A) 0.0051 at VGS = 10 V 50d 0.0063 at VGS = 4.5 V 50d • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET • 100 % Rg and UIS Tested


    Original     		SUP50N03-5m1P 2002/95/EC O-220AB SUP50N03-5m1P-GE3 11-Mar-11 SUP50N03 PDF

    Untitled

    Abstract: No abstract text available
    Text: SUP50N03-5m1P Vishay Siliconix N-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 • TrenchFET Power MOSFET RDS(on) () ID (A) 0.0051 at VGS = 10 V 50d 0.0063 at VGS = 4.5 V 50d Qg (Typ.) 21.7 • 100 % Rg and UIS Tested • Material categorization:


    Original     		SUP50N03-5m1P O-220AB SUP50N03-5m1P-GE3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 PDF

    si7121

    Abstract: Si4914B SI-4102 SI4599 Si4483A sir166 irfd120 si7949 si4459a SIR836
    Text: V ishay I ntertechnology, I nc . MOSFETs - Comprehensive Power MOSFET Technology Range I INNOVAT AND TEC O L OGY Vishay Siliconix N HN Power mosfets O 19 62-2012 Low to High Voltage Power MOSFETs ChipFET P o w e r PA K ® P o l a r PA K ® P o w e r PA I R ®


    Original     		Mediu33-4-9337-2727 VMN-SG2127-1210 si7121 Si4914B SI-4102 SI4599 Si4483A sir166 irfd120 si7949 si4459a SIR836 PDF