SUM90N04 Search Results
SUM90N04 Price and Stock
Vishay Siliconix SUM90N04-3M3P-E3MOSFET N-CH 40V 90A TO263 |
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SUM90N04-3M3P-E3 | Cut Tape |
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Vishay Intertechnologies SUM90N04-M3P-E3 |
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SUM90N04-M3P-E3 | 27 |
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Others SUM90N043M3PAVAILABLE EU |
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SUM90N043M3P | 1,200 |
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Vishay Intertechnologies SUM90N04-3M3P-E3NCHANNEL 40V DS MOSFET (Alt: SUM90N04-3M3P-E3) |
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SUM90N04-3M3P-E3 | 143 Weeks | 800 |
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SUM90N04 Datasheets (1)
Part | ECAD Model | Manufacturer | Description | Curated | Datasheet Type | |
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SUM90N04-3M3P-E3 | Vishay Siliconix | FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 40V 90A D2PAK | Original |
SUM90N04 Datasheets Context Search
Catalog Datasheet | Type | Document Tags | |
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3809
Abstract: 7483 AN609 28728
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SUM90N04-3m4P AN609 21-Jun-07 3809 7483 28728 | |
Contextual Info: SPICE Device Model SUM90N04-3m3P www.vishay.com Vishay Siliconix N-Channel 40 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C |
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SUM90N04-3m3P 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 | |
Contextual Info: New Product SUM90N04-3m3P Vishay Siliconix N-Channel 40 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 40 d RDS(on) () Max. ID (A) 0.0033 at VGS = 10 V 90 0.0041 at VGS = 4.5 V 90 Qg (Typ.) • TrenchFET Power MOSFET • 100 % Rg and UIS Tested • Compliant to RoHS Directive 2002/95/EC |
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SUM90N04-3m3P 2002/95/EC O-263 SUM90N04-3m3P-E3 11-Mar-11 | |
SUM90N04Contextual Info: SUM90N04-3m3P_RC www.vishay.com Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter |
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SUM90N04-3m3P AN609, 9529m 6341m 0475m 8594m 6655u 4656m 9616m 17-Aug-11 SUM90N04 | |
Contextual Info: SUM90N04-3m3P www.vishay.com Vishay Siliconix N-Channel 40 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 40 RDS(on) () MAX. ID (A) d 0.0033 at VGS = 10 V 90 0.0041 at VGS = 4.5 V 90 Qg (TYP.) 87 • TrenchFET Power MOSFET • 100 % Rg and UIS tested |
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SUM90N04-3m3P O-263 SUM90N04-3m3P-E3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 | |
A 69157
Abstract: 69157 mosfet 69157 V5805 SUM90N04-3m4P S-71488 S-71488Rev A7255
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SUM90N04-3m4P 18-Jul-08 A 69157 69157 mosfet 69157 V5805 SUM90N04-3m4P S-71488 S-71488Rev A7255 | |
Contextual Info: SPICE Device Model SUM90N04-3m3P www.vishay.com Vishay Siliconix N-Channel 40 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C |
Original |
SUM90N04-3m3P 11-Mar-11 | |
SUM90N04-3m3PContextual Info: New Product SUM90N04-3m3P Vishay Siliconix N-Channel 40 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 40 d RDS(on) () Max. ID (A) 0.0033 at VGS = 10 V 90 0.0041 at VGS = 4.5 V 90 Qg (Typ.) • TrenchFET Power MOSFET • 100 % Rg and UIS Tested • Compliant to RoHS Directive 2002/95/EC |
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SUM90N04-3m3P 2002/95/EC O-263 SUM90N04-3m3P-E3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 SUM90N04-3m3P | |
si7121
Abstract: Si4914B SI-4102 SI4599 Si4483A sir166 irfd120 si7949 si4459a SIR836
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Mediu33-4-9337-2727 VMN-SG2127-1210 si7121 Si4914B SI-4102 SI4599 Si4483A sir166 irfd120 si7949 si4459a SIR836 |