SUM90N Search Results

Contextual Info: SUM90N06-5m5P Vishay Siliconix N-Channel 60-V D-S MOSFET FEATURES PRODUCT SUMMARY V(BR)DSS (V) rDS(on) (Ω) ID (A) Qg (Typ) 60 0.0055 at VGS = 10 V 90d 78.5 • TrenchFET Power MOSFETS • 175 °C Junction Temperature • 100 % Rg and UIS Tested RoHS COMPLIANT

Contextual Info: SUM90N08-7m6P Vishay Siliconix N-Channel 75-V D-S MOSFET FEATURES PRODUCT SUMMARY V(BR)DSS (V) RDS(on) (Ω) ID (A) Qg (Typ.) 75 0.0076 at VGS = 10 V 90d 58 • TrenchFET Power MOSFETS • 175 °C Junction Temperature • 100 % Rg and UIS Tested RoHS COMPLIANT

SUM90N10

Abstract: 74643 sum90n10-8m2p
Contextual Info: SUM90N10-8m2P Vishay Siliconix N-Channel 100-V D-S MOSFET FEATURES PRODUCT SUMMARY V(BR)DSS (V) rDS(on) (Ω) ID (A) Qg (Typ) 100 0.0082 at VGS = 10 V 90d 97 • TrenchFET Power MOSFETS • 175 °C Junction Temperature • 100 % Rg and UIS Tested RoHS COMPLIANT

Contextual Info: SPICE Device Model SUM90N08-6m2P Vishay Siliconix N-Channel 75-V D-S MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range

3809

Abstract: 7483 AN609 28728
Contextual Info: SUM90N04-3m4P_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1].

Contextual Info: SUM90N08-7m6P Vishay Siliconix N-Channel 75-V D-S MOSFET FEATURES PRODUCT SUMMARY V(BR)DSS (V) RDS(on) (Ω) ID (A) Qg (Typ.) 75 0.0076 at VGS = 10 V 90d 58 • TrenchFET Power MOSFETS • 175 °C Junction Temperature • 100 % Rg and UIS Tested RoHS COMPLIANT

Contextual Info: SUM90N06-5m5P Vishay Siliconix N-Channel 60-V D-S MOSFET FEATURES PRODUCT SUMMARY V(BR)DSS (V) rDS(on) (Ω) ID (A) Qg (Typ) 60 0.0055 at VGS = 10 V 90d 78.5 • TrenchFET Power MOSFETS • 175 °C Junction Temperature • 100 % Rg and UIS Tested RoHS COMPLIANT

SUM90N06-4M4P

Contextual Info: SUM90N06-4m4P Vishay Siliconix N-Channel 60-V D-S MOSFET FEATURES PRODUCT SUMMARY V(BR)DSS (V) rDS(on) (Ω) ID (A) Qg (Typ) 60 0.0044 at VGS = 10 V 90d 105 • TrenchFET Power MOSFETS • 175 °C Junction Temperature • 100 % Rg and UIS Tested RoHS COMPLIANT

Contextual Info: SUM90N06-5m5P Vishay Siliconix N-Channel 60-V D-S MOSFET FEATURES PRODUCT SUMMARY V(BR)DSS (V) rDS(on) (Ω) ID (A) Qg (Typ) 60 0.0055 at VGS = 10 V 90d 78.5 • TrenchFET Power MOSFETS • 175 °C Junction Temperature • 100 % Rg and UIS Tested RoHS COMPLIANT

SUM90N10-8m2P

Abstract: SUM90N
Contextual Info: SUM90N10-8m2P Vishay Siliconix N Channel 100 V D-S MOSFET FEATURES PRODUCT SUMMARY V(BR)DSS (V) RDS(on) () 100 0.0082 at VGS = 10 V ID (A) 90 d Qg (Typ) 97 • • • • TrenchFET Power MOSFETS 175 °C Junction Temperature 100 % Rg and UIS Tested

SUM90N08

Abstract: 4A88
Contextual Info: SUM90N08-4m8P Vishay Siliconix N-Channel 75-V D-S MOSFET FEATURES PRODUCT SUMMARY V(BR)DSS (V) 75 rDS(on) (Ω) ID (A) 0.0048 at VGS = 10 V 90d 0.006 at VGS = 8 V 90 d • TrenchFET Power MOSFET • 175 °C Junction Temperature • 100 % UIS Tested Qg (Typ)

Contextual Info: SPICE Device Model SUM90N04-3m3P www.vishay.com Vishay Siliconix N-Channel 40 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C

Contextual Info: SUM90N08-7m6P Vishay Siliconix N-Channel 75-V D-S MOSFET FEATURES PRODUCT SUMMARY V(BR)DSS (V) RDS(on) (Ω) ID (A) Qg (Typ.) 75 0.0076 at VGS = 10 V 90d 58 • TrenchFET Power MOSFETS • 175 °C Junction Temperature • 100 % Rg and UIS Tested RoHS COMPLIANT

Contextual Info: SUM90N08-6m2P Vishay Siliconix N-Channel 75-V D-S MOSFET FEATURES PRODUCT SUMMARY V(BR)DSS (V) rDS(on) (Ω) ID (A) Qg (Typ) 75 0.0062 at VGS = 10 V 90d 75 • TrenchFET Power MOSFETS • 175 °C Junction Temperature • 100 % Rg and UIS Tested RoHS COMPLIANT

QG60

Contextual Info: SPICE Device Model SUM90N08-7m6P Vishay Siliconix N-Channel 75-V D-S MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range

6077

Abstract: 717 MOSFET na 7705 AN609
Contextual Info: SUM90N03-2m2P_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1].

121-398

Abstract: 4828 datasheet 4828 7483 transistor c 6073 AN609
Contextual Info: SUM90N06-4m4P_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1].

SUM90N04

Contextual Info: SUM90N04-3m3P_RC www.vishay.com Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter

74342

Abstract: SUM90N03
Contextual Info: New Product SUM90N03-2m2P Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 rDS(on) (Ω) ID (A)a, e 0.0022 at VGS = 10 V 90 0.0027 at VGS = 4.5 V 90 Qg (Typ) • TrenchFET Power MOSFET • 100 % Rg and UIS Tested RoHS 82 nC

uaa70

Contextual Info: SUM90N08-7m6P Vishay Siliconix N-Channel 75-V D-S MOSFET FEATURES PRODUCT SUMMARY V(BR)DSS (V) rDS(on) (Ω) ID (A) Qg (Typ) 75 0.0076 at VGS = 10 V 90d 58 • TrenchFET Power MOSFETS • 175 °C Junction Temperature • 100 % Rg and UIS Tested RoHS COMPLIANT

Contextual Info: SUM90N04-3m3P www.vishay.com Vishay Siliconix N-Channel 40 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 40 RDS(on) () MAX. ID (A) d 0.0033 at VGS = 10 V 90 0.0041 at VGS = 4.5 V 90 Qg (TYP.) 87 • TrenchFET Power MOSFET • 100 % Rg and UIS tested

SUM90N10

Abstract: SUM90N10-8m2P
Contextual Info: SPICE Device Model SUM90N10-8m2P Vishay Siliconix N-Channel 100-V D-S MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range

7447

Abstract: 8807 datasheet 7447 AN609
Contextual Info: SUM90N06-5m5P_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1].

Contextual Info: SPICE Device Model SUM90N03-2m2P www.vishay.com Vishay Siliconix N-Channel 30 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C