MMC2001
Abstract: MCORE hyper terminal
Text: MMCCMB1200QS/D Rev 1 Quick Start Guide – MMCCMB1200 Controller and Memory Board for the M•CORE MMC2001 1. Copy the CD-ROM subdirectory dev_sys\MMC2001\gnusample to the root directory of your hard disk for example, to root directory C:\ . W1 P4 W3 W6
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MMCCMB1200QS/D
MMCCMB1200
MMC2001
sys\MMC2001\gnusample
MMC2001
MCORE
hyper terminal
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PDF
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BR Connector
Abstract: MMC2001
Text: MMCEVB1200QS/D Rev 1 Quick Start Guide – MMCEVB1200PV Evaluation Board for the M•CORE MMC2001 1. Copy the CD_ROM subdirectory dev_sys\MMC2001\gnusample to the root directory of your hard disk for example, to root directory C:\ . W2 U1 U3 U2 W3 W6 S1 P5
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MMCEVB1200QS/D
MMCEVB1200PV
MMC2001
sys\MMC2001\gnusample
BR Connector
MMC2001
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PDF
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NPN Bipolar Transistor
Abstract: KTC3198-O TO-92 NPN Bipolar Transistor Bl 370 MARKING A1G
Text: KTC3198-O/Y/GR/BL Taiwan Semiconductor Small Signal Product TO-92 NPN Bipolar Transistor FEATURES - The transistor is subdivided into four groups according to its DC current gain: O, Y, GR, BL - Pb free and RoHS compliant MECHANICAL DATA - Case: TO-92 small outline plastic package
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KTC3198-O/Y/GR/BL
C/10s
195mg
S1405004
NPN Bipolar Transistor
KTC3198-O
TO-92 NPN Bipolar Transistor
Bl 370
MARKING A1G
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MAX232 G4
Abstract: IC404 IC808 ic401 diode C728 diode c729 transistor C721 IC818 ic811 C729
Text: MPC555 Evaluation Board Schematics A B C D VCC3_3 1 2 3 4 5 6 7 8 9 10 R101 4K75 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 VCC5 VCC3_3 CLKOUT B_CNTX0 B_CNRX0 1 6 2 7 3 8 4 9 5 TP102 TP103 CB100 100n /SRESET /PORESET A_CNTX0 A_CNRX0 TP100 TP101 SUBD9
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MPC555
TP102
TP103
CB100
TP100
TP101
CO101
MAX232-6
MAX232-2
MAX232-13
MAX232 G4
IC404
IC808
ic401
diode C728
diode c729
transistor C721
IC818
ic811
C729
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PDF
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4N7 Y2 capacitor
Abstract: Y2 capacitor 4N7 Y2 capacitor y 4n7 KONEK CAPACITOR Y2-CAPACITOR 4N7 CAPACITOR MKP-90 DEBAAO733QMV4 DEBAAO622QK0
Text: MKP-90 CAPACITORS KONEK ORDERING CODE SYSTEM: Digit 11 J K M The coded part number is subdivided in 10 groups comprising 17 digits: 1 2 3 4 5 6 7 10 11 12 + 13 14 15 8 9 Capacitance tolerance 5% 10% 20% -Group 6 One digit (12) indicates lead style. If there are two digits, the first one is the form of the lead
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MKP-90
MKP-90
lead622QK0
MKP-90,
DEBAAO733QMV4
11-Dec-07
4N7 Y2 capacitor
Y2 capacitor
4N7 Y2
capacitor y 4n7
KONEK CAPACITOR
Y2-CAPACITOR
4N7 CAPACITOR
DEBAAO622QK0
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1M resistor datasheet
Abstract: No abstract text available
Text: MKP-95 CAPACITORS KONEK ORDERING CODE SYSTEM: The coded part number is subdivided in 10 groups comprising 17 digits: 1 2 3 4 5 6 7 8 9 10 11 12 + 13 14 15 16 17 -Group 6 One digit 12 indicates lead style. If there are two digits, the first one is the form of the lead
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MKP-95
RCBAAO622QK0
MKP-95,
RCBAAO733QMV4
11-Dec-07
1M resistor datasheet
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PDF
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Untitled
Abstract: No abstract text available
Text: MKP-77 CAPACITORS KONEK ORDERING CODE SYSTEM: Coded part number are subdivided in 6 groups comprising 10 digits: 1 2 3 4 5 6 7 8 9 -Group 4 One digit 8 indicate the lead spacing or pitch. Digit (8) P Q S U V 10 - Group 1 The first three digits (1,2,3) indicate series.
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MKP-77
MKP-77
BLAN622QK0
MKP-77,
BLAS533PMV4
May-04
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PDF
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MKP-24
Abstract: No abstract text available
Text: MKP-24 CAPACITORS KONEK -Group 4 One digit 8 indicate the lead spacing or pitch. ORDERING CODE SYSTEM: Digit (8) P Q S U The coded part number are subdivided in 6 groups comprising 10 digits: 1 2 3 4 5 6 7 8 9 10 -Group 5 One digit (9) indicates the capacitance tolerance:
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MKP-24
MKP-24
BBBO622QK0
MKP-24,
BBBO733QMV4
11-Dec-07
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PDF
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bc818
Abstract: BC807 BC808 BC817 BC807 SOT23
Text: BC807 / BC808 PNP Silicon Epitaxial Planar Transistors for switching, AF driver and amplifier applications These transistors are subdivided into three groups -16, -25 and -40, according to their current gain. As complementary types the NPN transistors BC817
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BC807
BC808
BC817
OT-23
BC818
BC807
BC808
BC817
BC807 SOT23
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transistor bc328
Abstract: TRANSISTOR BC327 equivalent components for transistor bc328 BC327 BC328
Text: BC327…BC328 PNP Silicon Epitaxial Planar Transistor for switching and amplifier applications These types are subdivided into three groups -16, -25 and -40, according to their DC current gain. 1. Collector 2. Base 3. Emitter TO-92 Plastic Package Absolute Maximum Ratings Ta = 25 OC
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BC327.
BC328
BC327
transistor bc328
TRANSISTOR BC327
equivalent components for transistor bc328
BC327
BC328
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transistor bc237 bc337
Abstract: BC238 NPN transistor download datasheet BC239 BC237 BC238 BC239 NPN transistor download datasheet BC238 datasheet transistor bc237 datasheet
Text: BC237.BC239 NPN Silicon Epitaxial Planar Transistor for switching and amplifier applications The transistor is subdivided into three groups, A, B, and C, according to its DC current gain. 1. Collector 2. Base 3. Emitter TO-92 Plastic Package Absolute Maximum Ratings Ta = 25 OC
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BC237.
BC239
BC237
BC238
transistor bc237 bc337
BC238 NPN transistor download datasheet
BC239
BC237
BC238
BC239 NPN transistor download datasheet
BC238 datasheet
transistor bc237 datasheet
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BR 8550
Abstract: BR 8550 D BR 8550D 8550c 8550D he 8550d PNP 8550 8550 pnp transistor 8550D transistor br 8550 c
Text: ST 8550 2A PNP Silicon Epitaxial Planar Transistor for switching and amplifier applications. Especially suitable for AF-driver stages and low power output stages. The transistor is subdivided into two groups C and D according to its DC current gain. 1. Emitter 2. Base 3. Collector
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8550C
8550D
BR 8550
BR 8550 D
BR 8550D
8550c
8550D
he 8550d
PNP 8550
8550 pnp transistor
8550D transistor
br 8550 c
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BC817W
Abstract: BC818W v 250 c 45
Text: BC817W / BC818W NPN Silicon Epitaxial Planar Transistors for general purpose and switching applications These transistors are subdivided into three groups –16, -25, -40 according to their current gain. Absolute Maximum Ratings Ta = 25 OC Parameter Collector Base Voltage
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BC817W
BC818W
BC817W
BC818W
v 250 c 45
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BR 9014
Abstract: BR 9015 BR 9014 C transistor 9015 c 9015 transistor data sheet transistor 9014 transistor 9015 9015 pnp pnp transistor 9015 9015 TO-92
Text: ST 9015 PNP Silicon Epitaxial Planar Transistor for switching and AF amplifier applications. The transistor is subdivided into four groups, A, B, C and D, according to its DC current gain. As complementary type the NPN transistor ST 9014 is recommended. 1. Emitter 2. Base 3. Collector
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AN-912
Abstract: No abstract text available
Text: OVERVIEW The scope of this application note is to introduce common data transmission parameters and to provide their definitions. This application note is subdivided into five sections, which are: ample the receiver’s input terminals. This voltage is referenced to circuit common ground . This parameter is illustrated in Figure 1 along with its mathematical equation.
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an011932
AN-912
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Untitled
Abstract: No abstract text available
Text: MMBTSA1298 PNP Silicon Epitaxial Planar Transistor for low frequency power amplifier and power switching applications The transistor is subdivided into two groups, O and Y according to its DC current gain. SOT-23 Plastic Package Absolute Maximum Ratings Ta = 25 OC
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MMBTSA1298
OT-23
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2SB772S
Abstract: No abstract text available
Text: ST 2SB772S PNP Silicon Epitaxial Transistor MEDIUM POWER LOW VOLTAGE TRANSISTOR The transistor is subdivided into three groups Q, P and E, according to its DC current gain. On special request, these transistors can be manufactured in different pin configurations.
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2SB772S
-20mA
-200mA
300us,
2SB772S
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st 2sc1815
Abstract: 2SC1815 ST2SC1815 2SA1015
Text: ST 2SC1815 NPN Silicon Epitaxial Planar Transistor for switching and AF amplifier applications. The transistor is subdivided into four groups, O, Y, G and L, according to its DC current gain. As complementary type the PNP transistor ST 2SA1015 is recommended.
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2SC1815
2SA1015
st 2sc1815
2SC1815
ST2SC1815
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2SC3875
Abstract: No abstract text available
Text: ST 2SC3875 NPN Silicon Epitaxial Planar Transistor for switching and AF amplifier applications. The transistor is subdivided into four groups, O, Y, G and L, according to its DC current gain. On special request, these transistors can be manufactured in different pin configurations.
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2SC3875
100mA,
2SC3875
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2sc536
Abstract: transistor 2sC536 2SC536 transistor st 2SC536 equivalent 2sc536 noise figure 2SC536 C Collector 5v npn TRANSISTOR
Text: ST 2SC536 NPN Silicon Epitaxial Planar Transistor for switching and AF amplifier applications. The transistor is subdivided into four groups, O, Y, G and L, according to its DC current gain. On special request, these transistors can be manufactured in different pin configurations.
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2SC536
150mA
30MHz
2sc536
transistor 2sC536
2SC536 transistor
st 2SC536 equivalent
2sc536 noise figure
2SC536 C
Collector 5v npn TRANSISTOR
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2SC2784
Abstract: No abstract text available
Text: ST 2SC2784 NPN Silicon Epitaxial Planar Transistor Audio frequency low noise amplifier. The transistor is subdivided into four groups, P, F, E and U according to its DC current gain. On special request, these transistors can be manufactured in different pin configurations.
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2SC2784
2SC2784
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2N5088 equivalent
Abstract: 2N5088 2n5088 transistor 2N5089 2N5087 ST transistor 2N5089 equivalent 2N5089 NPN 2N5089 power ST 024
Text: ST 2N5088 / 2N5089 NPN Silicon Epitaxial Planar Transistor for switching and AF amplifier applications. The transistor is subdivided into one group according to it DC current gain. As complementary type the PNP transistor ST 2N5086 and ST 2N5087 are recommended.
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2N5088
2N5089
2N5086
2N5087
2N5088 equivalent
2n5088 transistor
2N5089
ST transistor
2N5089 equivalent
2N5089 NPN
2N5089 power
ST 024
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PDF
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Untitled
Abstract: No abstract text available
Text: BC817, BC818 Small Signal Transistors NPN _ FEATURES SOT-23 + NPN Silicon Epitaxial Planar Transistors for switching, AF driver and amplifier applications. ♦ Especially suited for automatic insertion in thick- and thin-film circuits. ♦ These transistors are subdivided into three groups -16,
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OCR Scan
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BC817,
BC818
OT-23
BC807
BC808
OT-23
BC817-16
BC818-16
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BCY59
Abstract: BCY58 bcy59c bcy58v BCY 85 bcy59v
Text: BCY58, BCY59 NPN Silicon Epitaxial Planar Transistors for switching and amplifier applications electronic design in commercial The transistors are subdivided into four groups A, B, C and D according to their current gain. max. 5.0$ max.0.50 Metal case JE D E C TO -18
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OCR Scan
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BCY58,
BCY59
BCY58
BCY59
bcy59c
bcy58v
BCY 85
bcy59v
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PDF
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