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    SU 179 08 89 Search Results

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    bq 738

    Abstract: Bq 737 cn/A/U 237 BG
    Text: P4SMA6V8. P4SMA440A P4SMA6V8C. P4SMA220C 400 W Unidirectional and Bidirectional Surface Mounted Transient Voltage Suppressor Diodes Dimensions in mm. Voltage 6.8 to 300 V CASE: SMA/DO-214AC Power 400 W/ms R • • • • • • • Glass passivated junction


    Original     		PDF P4SMA440A P4SMA220C SMA/DO-214AC EIA-RS-481) bq 738 Bq 737 cn/A/U 237 BG

    6389G50

    Abstract: SIEMENS tle 420 TLE 4242 G Daelim 4269 HATTELAND TLE6389G50-1 4299G HB sot23 6389GV
    Text: Ultimate POWER – Perfect Control COMPLETE Automotive Solutions from Infineon www.infineon.com/power Never stop thinking. Introduction Power and control – combine your success T H E E V E R I N C R E A S I N G level of power and control needed in automotive electronics is driving innovation in modern vehicles.


    Original     		PDF B112-H6731-G10-X-7600 6389G50 SIEMENS tle 420 TLE 4242 G Daelim 4269 HATTELAND TLE6389G50-1 4299G HB sot23 6389GV

    diode sy 345

    Abstract: diode SY 192 sd 339 sy 320 diode SD 338 SY 345 KT 829 b k3451 KT 828 A SD337
    Text: SERVICE-MITTEILUNGEN V E B R F T I N D U S T R I E V E R T R I E B R U N D F U N K UND F E R N S E H E N t B i n n a |r a d i o - t e l e v i s i o n I Ausgobe 1-2 _ _ Febr. 89 1-7 Mitteilung aus dam VEB RFT IV RuF Leipzig, Organisation Plan der Inventurtermine Ersatztell/sroßhandel 1989


    OCR Scan     		PDF III/18/379 diode sy 345 diode SY 192 sd 339 sy 320 diode SD 338 SY 345 KT 829 b k3451 KT 828 A SD337

    2SC1600

    Abstract: NE57510 NE57500 ne575 2SC1042 2SC1642 NE57520 321E S21E 2SC164
    Text: NEC/ CALIFORNIA NEC SbE D b4S7414 00053^^ 4TS * N E C C T ^ - o s NE57500 NE57510 NE57520 NPN MEDIUM POWER MICROWAVE TRANSISTOR FEATURES DESCRIPTION AND APPLICATIONS • HIGH OSCILLATOR POWER OUTPUT: 700 m W at 1.7 GHz The NE575 series of NPN silicon medium power transistors is


    OCR Scan     		PDF b4S7414 NE57500 NE57510 NE57520 NE575 2SC1600 2SC1042 2SC1642 NE57520 321E S21E 2SC164

    of all 74 ic series

    Abstract: 2SC3140 2SC3139 NEL080525-28 NEL0800 NEL080120-28 NEL080220-28 J279 J430 j6925
    Text: N E C / CALIFORNIA NEC SbE 3> • b457Mm Q0QES43 213 *NECC NEL080120-28 NEL080220-28 NEL080525-28 CLASS A, 860 MHz, 24 VOLT POWER TRANSISTOR ABSOLU TE MAXIMUM RATING S FEATURES SYM BOLS • H IGH LIN EA R P O W E R PARAM ETERS Ta = 25°C UNITS R A TIN G S


    OCR Scan     		PDF Q0QES43 NEL080120-28 NEL080220-28 NEL080525-28 NEL0801 NEL0802 NEL0805: NEL0800 to1000 bMS74m of all 74 ic series 2SC3140 2SC3139 NEL080525-28 J279 J430 j6925

    transistor 86 y 87

    Abstract: 2SC3139 2SC3141
    Text: NEL080120-28 NEL080220-28 NEL080525-28 CLASS A, 860 MHz, 24 VOLT POWER TRANSISTOR NOT RECOMMENDED FOR NEW DESIGN FEATURES DESCRIPTION • HIGH LINEAR POWER N EC 's N E L 0 8 0 0 series of N P N epitaxial U H F pow er transis­ tors is designed for linear operation in the 5 0 0 to 1000 M Hz


    OCR Scan     		PDF NEL080120-28 NEL080220-28 NEL080525-28 2SC3139 TYP150 NEL080525-28 transistor 86 y 87 2SC3141

    2SC3140

    Abstract: L0801
    Text: CLASS A, 860 MHz, 24 VOLT POWER TRANSISTOR NEL080120-28 NEL080220-28 NEL080525-28 NOT RECOMMENDED FOR NEW DESIGN FEATURES DESCRIPTION HIGH LIN EA R PO W ER NEC's N EL0800 series of NPN epitaxial UHF pow er transis­ tors is designed fo r linear operation in the 500 to 1000 MHz


    OCR Scan     		PDF L0801: NEL0802: NEL0805: NEL080120-28 NEL080220-28 NEL080525-28 EL0800 d-179 2SC3140 L0801

    NC921

    Abstract: ne41635 NE41607 NE41612-1
    Text: NPN MEDIUM POWER UHF-VHF TRANSISTOR NE416 SERIES FEATURES_ • LOW NOISE FIGURE: 1 dB at 70 MHz linearity. The NE416 series is available in a wide selection of package styles and in chip form for thin and thick film circuits. Most package styles are available with screening levels through


    OCR Scan     		PDF NE416 NC921 ne41635 NE41607 NE41612-1

    NE64535

    Abstract: NE64500 nec08 2SC2585 NE645 2SC2273 0/2SC2585 mig mag 200 NE64508 s2212
    Text: S bE N E C/ CALIFORNIA NEC D • b M 2 7 L tm 0 D 0 2 M 2 2 bDfl H N E C C NE64500 NE64508 NE64535 NE64587 NPN SILICON HIGH FREQUENCY TRANSISTOR FEATURED DESCRIPTION AND APPLICATIONS • HIGH fr fr = 8.5 GHz The NE645 series of NPN silicon transistors is designed for


    OCR Scan     		PDF ogo2M22 T-31-H NE64500 NE64508 NE64535 NE64587 NE64500 NE645 nec08 2SC2585 2SC2273 0/2SC2585 mig mag 200 s2212

    2SC1253

    Abstract: 2SC1251 NEC k 2134 transistor NE74000 NE74014 NE74020 NE90115 CTO-39 2143E 1321E12
    Text: N E C / CALIFORNIA □MS7414 000134=1 G 1SE D 7 z ll- â S ' NE74000 NE74014 NE74020 NPN MEDIUM POWER UHF-VHF TRANSISTOR DESCRIPTION AND APPLICATIONS FEATURES The NE740 series of NPN silicon transistors is designed for wide bandwidth VHF and UHF amplifiers. Excellent in­


    OCR Scan     		PDF MS7414 NE74000 NE74014 NE74020 NE740 2SC1253 2SC1251 NEC k 2134 transistor NE74020 NE90115 CTO-39 2143E 1321E12

    1400

    Abstract: NE202 circuit NE202 NE20200 NE20248 NE20283A NE202XX W2603
    Text: NEC/ CALIFORNIA 1SE D bM2741M OGOIS^G T-31-¿S' 5 - N E i* i» ULTRA LOW NOISE K-BAND HETERO JUNCTION FET FEATURES NE202 SERIES OUTLINE DIMENSIONS • LOW NOISE FIGURE: 1 dB TYP at f = 12 GHz NE202XX 1.2 dB TYP at f = 12 GHz (NE202XX-1.4)


    OCR Scan     		PDF bM2741M NE202 NE202XX) NE202XX-1 NE20248) NE20283A) 1400 NE202 circuit NE20200 NE20248 NE20283A NE202XX W2603

    TPM1919-40

    Abstract: No abstract text available
    Text: TPM1919-40 PRELIMINARY May 1996 TOSHIBA TPM1919-40 1. RF PERFORMANCE SPECIFICATIONS CHARACTERISTICS SYMBOL CONDITION Ta= 25°C Ì MIN. TYP. 45.0 46.0 dBm 12.0 13.0 dB MAX. UNIT Output Power at 1dB Compression Point Pi dB Power Gain at 1dB Compression Point


    OCR Scan     		PDF TPM1919-40 170mA TPM1919-40

    NE8004

    Abstract: NE800495-4
    Text: NE8004 SERIES C-BAND POWER GaAs MESFET FEATURES NE800495-X S 212vs FREQUENCY . CLASS A OPERATION • HIGH EFFICIENCY: t ADD > 3 5 % T Y P • BROADBAND CAPABILITY • AVAILABILITY: Chip H erm etic Package . PARTIALLY MATCHED INPUT FOR PACKAGED DEVICES •


    OCR Scan     		PDF NE8004 NE800495-X 212vs L42752S 0DLSS40 NE800495-4

    ne8004 FET

    Abstract: ne800495-6 NE800495 NE8004 ne0800 NE8004956
    Text: NE8004 SERIES C-BAND POWER GaAs MESFET FEATURES NE800495-X S2HVS FREQUENCY CLASS A OPERATION HIGH EFFICIENCY: t]A D D ;> 35% TYP BROADBAND CAPABILITY AVAILABILITY: Chip Hermetic Package m •o PARTIALLY MATCHED INPUT FOR PACKAGED DEVICES CO PROVEN RELIABILITY


    OCR Scan     		PDF NE8004 NE800495-X NE800495 E800400 gm037 ne8004 FET ne800495-6 ne0800 NE8004956

    UEI 20 SP 010

    Abstract: Datenblattsammlung u82720 mikroelektronik datenblattsammlung VEB mikroelektronik UB8820M "halbleiterwerk frankfurt" UEI 15 SP 020 Aktive elektronische Bauelemente 1988 Teil 2 B4207D
    Text: e l e k t r o m k - b a u e ì e m e n t e * W UKaÊÊi I Ä I L I I m V w •1 vît M •'4 n, ' I ill ■ DATEN BLATTSAMM LU NG elektronische bauelemente ?: V' I j| D A I Ï K B L A U S A MML ÜHG "E lektronische Bauelemente1' Ausgabe 1/89 14 : "Neue und weiterentwiekelte Bauelemente sowie ausgewählte Importbauelemente"


    OCR Scan     		PDF 64-KBit-Sehreib--Iese-Speicher 086/11/B9 UEI 20 SP 010 Datenblattsammlung u82720 mikroelektronik datenblattsammlung VEB mikroelektronik UB8820M "halbleiterwerk frankfurt" UEI 15 SP 020 Aktive elektronische Bauelemente 1988 Teil 2 B4207D

    NE41612

    Abstract: NE41600 9904 112 2810 Itt 5408 9915 H 3 37 07
    Text: NPN MEDIUM POWER UHF-VHF TRANSISTOR NE416 SERIES FEATURES_ . LOW NOISE FIGURE: 1 dB at 7 0 M H z • HIGH RELIABILITY METALLIZATION • LINEAR POWER OUTPUT: 2 0 0 mW at 2 G H z • LOW COST DESCRIPTION _ duced, using the latest techniques and production controls


    OCR Scan     		PDF NE416 NE41612 NE41600 9904 112 2810 Itt 5408 9915 H 3 37 07

    SAA 1006

    Abstract: si 18752 K 1723 NE02132 2sc2570 transistor SAA 1058 saa 5000 0958K
    Text: NPN SILICON HIGH FREQUENCY TRANSISTOR NE021 SERIES FEATURES_ • HIGH INSERTION GAIN: 18.5 dB at 500 MHz • LOW NOISE FIGURE: 1.5 dB at 500 MHz • HIGH POWER GAIN: 12 dB at 2 GHz • LARGE DYNAMIC RANGE: 19 dBm at 1 dB, 2 GHz Gain Compression


    OCR Scan     		PDF NE021 NE02107 OT-23) SAA 1006 si 18752 K 1723 NE02132 2sc2570 transistor SAA 1058 saa 5000 0958K

    2SC2037

    Abstract: 2SC1733 2SC1424 2SC2759 ne73436 JE73 2sc2026 2SC2148 NE73432 NE734
    Text: N E C / CALIFORNIA b427414 OGOlHb? 1SE D N EC b -T -ll-tf NPN SILICON GENERAL PURPOSE TRANSISTOR NE734 SERIES FEATURES DESCRIPTION AND APPLICATIONS • LOW N O ISE FIG U R E: < 3 dB at 500 MHz The NE734 series of NPN silicon general purpose UHF transis­ tors provide the designer with a wide selection of reliable


    OCR Scan     		PDF b427414 NE734 r-31-27 NE73435) 2SC2037 2SC1733 2SC1424 2SC2759 ne73436 JE73 2sc2026 2SC2148 NE73432

    Untitled

    Abstract: No abstract text available
    Text: K l HEWLETT mltiM PACKARD Cascadable Silicon Bipolar MMIC Amplifier Technical Data MSA-0270 F eatures • Cascadable 50 Q Gain Block • 3 dB Bandwidth: DC to 2.8 GHz • 12.0 dB Typical Gain at 1.0 GHz • Unconditionally Stable k > l • Herm etic Gold-ceramic


    OCR Scan     		PDF MSA-0270 MSA-0270 G01A503 5965-9698E

    NE02136

    Abstract: 2SC2570 NE02135 equivalent 2sc2570 transistor NE02103 k427 2SC1560 2sc2351 equivalent LM5741 GHZ micro-X Package
    Text: N E C / 1SE D CALIFORNIA r - 3 / '/ 5 b427414 000137S 1 NPN SILICON HIGH FREQUENCY TRANSISTOR T '3 i- I 7 NE021 SERIES FEATURES DESCRIPTION AND APPLICATIONS • HIGH INSERTION GAIN: 18.5 dB at 500 MHz The NE021 series of NPN silicon transistors provides eco­


    OCR Scan     		PDF b427414 000137S NE021 3l-17 NE02136 2SC2570 NE02135 equivalent 2sc2570 transistor NE02103 k427 2SC1560 2sc2351 equivalent LM5741 GHZ micro-X Package

    40MAG

    Abstract: NE57510
    Text: NPN MEDIUM POWER MICROWAVE TRANSISTOR NE57500 NE57510 FEATURES DESCRIPTION • HIG H O S C ILLA TO R PO W ER O U TPU T: 700 m W at 1.7 G Hz The NE575 series of NPN silicon medium powertransistors is designed to operate in amplifiers and oscillators up to 2 GHz


    OCR Scan     		PDF NE57500 NE57510 NE575 2S21I NE57500, NE57510 NE57500 40MAG

    Untitled

    Abstract: No abstract text available
    Text: H E W L E T T - P A C K A R D / C M PN TS Whpt H E W L E T T WHiM P A C K A R D blE D • MM475flM O O l O O b J Ofll HPA MSA-0311 MODAMP Cascadable Silicon Bipolar Monolithic Microwave Integrated Circuit Amplifiers SOT-143 Package Features • Cascadable 50 f2 Gain Block


    OCR Scan     		PDF MM475flM MSA-0311 OT-143 MSA-0311

    MSA0270

    Abstract: No abstract text available
    Text: Wfipl HEW LETT mHHMPACKARD Cascadable Silicon Bipolar MMIC Amplifier Technical Data MSA-0270 F eatures • C ascadable 50 Q Gain B lock • 3 dB Bandwidth: DC to 2.8 GHz • 12.0 dB T ypical G ain a t 1.0 GHz • U n co n d ition ally S ta b le k > l • H erm etic G old-ceram ic


    OCR Scan     		PDF MSA-0270 5965-9698E 5966-4954E MSA0270

    ATF-35576

    Abstract: ATF-35576-TR2 ATF35576
    Text: HEWLETT —PACKARD/ CMPNTS blE D H EW LETT wLeA PACKARD • 4 4 4 7 5 A 4 □ D D tìeì4fl QT3 H H P A ATF-35576 2-18 GHz Low Noise Pseudomorphic HEMT Features 7 6 Package • PHEMT Technology • High Gain at Moderate Noise Figure: G = 12 dB Typ, NF = 2.0 dB Max @ 12 GHz


    OCR Scan     		PDF 44475A4 ATF-35576 ATF-35576-TR2 ATF35576