ATF-35176
Abstract: ina10386 lnb downconverter schematic diagram ATF-35576 ATF35176 INA-10386 AN-A008 micro-X ceramic Package lna fet ATF13036 LNB down converter for Ku band
Text: Direct Broadcast Satellite Systems Application Note A009 NOTE: This publication is a reprint of a previously published Application Note and is for technical reference only. For more current information, see the following publications: • AN1091, 1 and 2 Stage 10.7 to 12.7 GHz Amplifiers Using the
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AN1091,
ATF-36163
5965-1235E.
AN1136,
5966-2488E.
AN1139,
INA-51063
5091-8819E
5968-3629E
ATF-35176
ina10386
lnb downconverter schematic diagram
ATF-35576
ATF35176
INA-10386
AN-A008
micro-X ceramic Package lna fet
ATF13036
LNB down converter for Ku band
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ATF-35576
Abstract: No abstract text available
Text: ATF-35576 2-18 GHz Low Noise Pseudomorphic HEMT W hatHEWLETT m LE M PA C K A R D Features 76 Package • PHEMT Technology • High Gain at Moderate Noise Figure: G = 12 dB Typ, NF = 2.0 dB Max @ 12 GHz • Cost Effective Ceramic Microstrip Package • Tape-and-Reel Packaging Option Available1
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ATF-35576
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ATF-35576
Abstract: ATF-35576-TR2 ATF35576
Text: HEWLETT —PACKARD/ CMPNTS blE D H EW LETT wLeA PACKARD • 4 4 4 7 5 A 4 □ D D tìeì4fl QT3 H H P A ATF-35576 2-18 GHz Low Noise Pseudomorphic HEMT Features 7 6 Package • PHEMT Technology • High Gain at Moderate Noise Figure: G = 12 dB Typ, NF = 2.0 dB Max @ 12 GHz
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44475A4
ATF-35576
ATF-35576-TR2
ATF35576
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ATF-35576
Abstract: SU 179 1S21
Text: HEWLETT-PACKARD/ CMPNTS blE I> Wam H E W L E T T llLm7Sfll4 □□□tiei4ô 0T3 H H P A ATF-35576 2-18 GHz Low Noise Pseudomorphic HEMT PACKARD w LU M • Features 76 Package • PHEMT Technology • High Gain at Moderate Noise Figure: G = 12 dB Typ, NF = 2.0 dB Max @ 12 GHz
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ATF-35576
SU 179
1S21
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HRMA-0470B
Abstract: Semicon volume 1 HPMA-2085 HP 33002A AVANTEK ATF26884 SJ 2036 HPMA-0470TXV HPMA-0485 HPMA-0370 DIODE GOC 61
Text: Whal HEWLETT \HrJk PACKARD Communications Components Designer’s Catalog, GaAs and Silicon Products A Brief Sketch Hewlett-Packard is one of the world’s leading designers and manufacturers of RF and microwave semiconductors, optoelectronic, and fiber optic
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E-28230
S-164
CH-8902
HRMA-0470B
Semicon volume 1
HPMA-2085
HP 33002A
AVANTEK ATF26884
SJ 2036
HPMA-0470TXV
HPMA-0485
HPMA-0370
DIODE GOC 61
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ATF-35176
Abstract: ATF-3507 ATF-35076 ATF-21170 ATF-44100 ATF26550 ATF-13036 ATF-10170 ATF-35576 ATF-35376
Text: Gallium Arsenide GaAs Field Effect Transistors (FETs) Low Noise GaAs FETs (Typical Specifications at +25°C Case Temperature) Part Number Gate Width Optimum Freq. Range (GHz) Test Freq. (GHz) NF. (dB) (dB) PldB (dBm) 0.5-12 2-18 0.5-6 0.5-10 4 12 4 4 0.5
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ATF-10100
ATF-13100
ATF-21100
ATF-25100
ATF-10170
ATF-13170
ATF-21170
ATF-25170
ATF-10136
ATF-10236
ATF-35176
ATF-3507
ATF-35076
ATF-44100
ATF26550
ATF-13036
ATF-35576
ATF-35376
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