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    LGA marking code stmicroelectronics

    Abstract: RAFTP98 STRAFT-P98L15 LQW15AN8N2C00 ST LGA marking code STHVDAC-303
    Text: STRAFT-P98L15 Antenna tuner for cellular application Datasheet  production data Features • 50  nominal Input for a wide range of output impedances ■ Wide operating frequency range 824 MHz to 2170 MHz ■ Specifically optimized to match single antenna


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    PDF STRAFT-P98L15 STHVDAC-303xF6) LGA marking code stmicroelectronics RAFTP98 STRAFT-P98L15 LQW15AN8N2C00 ST LGA marking code STHVDAC-303

    STMicroelectronics marking code date LGA-16

    Abstract: LGA marking code stmicroelectronics
    Text: STRAFT-P161L15 Antenna tuner for cellular application Datasheet - production data Applications • Multiband GSM/WCDMA mobile phone  Cellular antenna tunable matching network  Mobile phone TRP and TIS optimization and alignment to 3GPP requirements  Open loop application


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    PDF STRAFT-P161L15 STHVDAC-303xF6) DocID024448 STMicroelectronics marking code date LGA-16 LGA marking code stmicroelectronics

    P01L15

    Abstract: 0201 1 uf murata capacitors automotive controller LIN CL21B223KBCNNN STRAFT rffe 20/P01L15
    Text: STHVDAC-304M High voltage BST capacitance controller Datasheet  production data Features • Dedicated ASIC to control BST tunable capacitances ■ Operation compliant with cellular systems requirements ■ Integrated boost converter with 4 programmable outputs from 0 to 30 V


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    PDF STHVDAC-304M P01L15 0201 1 uf murata capacitors automotive controller LIN CL21B223KBCNNN STRAFT rffe 20/P01L15

    plji

    Abstract: transistor C4 016 LM 2222 2222 kn a 2222-581 AI 757 BLF241 UBB777
    Text: Philips Semiconductors_ Product specification HF/VHF power MOS transistor SbE J> m pLJILIPS INTERNATIONAL FEATURES • • • • • BLF241 711DflSb 00437bfc. 453 • PHIN PIN CONFIGURATION 7 “ 3 ^ " " 0 High power gain Easy power control


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    PDF BLF241 711Gfl5ti 00M37bfc. MSB009' MBB072-S BLF24Â 0Q43774 plji transistor C4 016 LM 2222 2222 kn a 2222-581 AI 757 BLF241 UBB777

    diode SY 192

    Abstract: KP902A Datenblattsammlung Halbleiterbauelemente DDR VEB mikroelektronik transistor kp mikroelektronik datenblattsammlung "halbleiterwerk frankfurt" KP306a mikroelektronik DDR
    Text: . • M ' - l ä r o u jk 1 U ’i m - í!Í'.>. "lA T T S A M M . 'Q elektronische Bauelemente IWT iO 1/87 I# %# S Die vorliegenden Datenblätter dienen nur zur Information« Sie beinhalten Informationen über Halbleiterbauelemente des in den Listen elektronischer Bauelemente eingestuften Sortiments«


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    310J

    Abstract: No abstract text available
    Text: CM M M MMX IM miao M U MKUECTION THIS DRAWING IS UNPUBLISHED. copvkiomt i* RELEASED FOR PUBLICATION mr AMP iNeoMMm. au. LOC 6 ,19 iwwuriowm. riwts acsbmed. OIST 14 REVISIONS P F 20« LTK A OATS APPO 2-2-94 Vo NE DESCRIPTION REV 0720-0349-94 “0 £ VIRE RANGE


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    PDF 4JU126MEPT1I32 132XJ 310J

    Nippon capacitors

    Abstract: No abstract text available
    Text: HB56RW872ES Series 8,388,608-word x 72-bit High Density Dynamic RAM Module HITACHI ADE-203-775A Z Rev. 1.0 Apr. 23, 1997 Description The HB56RW872ES belongs to 8 Byte DIMM (Dual In-line Memory Module) family, and has been developed as an optimized main memory solution for 4 and 8 Byte processor applications. The


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    PDF HB56RW872ES 608-word 72-bit ADE-203-775A 16-Mbit HM51W16400) 16-bit 74LVT16244) Nippon capacitors

    la 7630

    Abstract: No abstract text available
    Text: W A G O Companies and Representations A rg e n tin a Fin la n d Ita ly Sin g a p o re AEA S.A.C.I.F. Asuncion 2130 1419 Buenos Aires Phone + + 5 4 / 1 1 /45741555 Fax + + 5 4 / 1 1 /4574 2400 MODIO OY Pulttitie 2 A 00880 Helsinki Phone + + 3 5 8 -9 -7 7 4 4 060


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    PDF 1-800-DIN 304-Zona 8015-Puerto la 7630

    HKMK

    Abstract: No abstract text available
    Text: BMIMM* I W IM TMinO W H HKMKTIOM T H IS DRAWING I S U N P U B LIS H E D . co ra iio fr i t R E LE A S E D FO R P U B L IC A T IO N or AMP incorporated, ,1 9 . LOC 01ST 6 14 all international richts r e x M O . P W 20« R E V IS IO N S Œ9CRIPTI0N LTO A


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    PDF 02FEB 0EPT1132M HKMK

    382J

    Abstract: 141015
    Text: 4 1 ORAMINB HMOE IN THIRD MMOLE PROJECTION T H IS DRAU1NG I S UNPUBLISHED. COPYRIGHT 1 9 3 RELEASED FOR PUBLICATION AMP INCORPORATED. ALL INTERNATIONAL ST ? o ,1 9 - <7 RIGHTS DESERVED. 7 1 DIST LQC R E V ISIO N S 74 p F ZONE LTR H DESCRIPTION DATE 6-18-93


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    PDF s-18-93 02-C7 M52503B-123 -20fi92> NIL-T-T0727 AHPTJ122 UU728A 382J 141015