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    STN2N10L Search Results

    STN2N10L Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    STN2N10L STMicroelectronics N-Channel Enhancement Mode Power MOS Transistor Original PDF

    STN2N10L Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    n2n10

    Abstract: N2N10L STN2N10L
    Text: STN2N10L N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE ST N2N10L • ■ ■ ■ ■ ■ V DSS R DS on ID 100 V < 0.5 Ω 2 A TYPICAL RDS(on) = 0.35 Ω AVALANCHE RUGGED TECHNOLOGY SOT-223 CAN BE WAVE OR REFLOW SOLDERED AVAILABLE IN TAPE AND REEL ON


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    PDF STN2N10L N2N10L OT-223 OT-223 n2n10 N2N10L STN2N10L

    P008B DIODE

    Abstract: STN2N10L STN2N10
    Text: STN2N10L N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR ADVANCE DATA TYPE V DSS R DS on I D CONT STN2N10L 100 V < 0.5 Ω 2A • ■ ■ ■ ■ ■ TYPICAL RDS(on) = 0.35 Ω AVALANCHE RUGGED TECHNOLOGY SOT-223 CAN BE WAVE OR REFLOW SOLDERED AVAILABLE IN TAPE AND REEL ON


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    PDF STN2N10L OT-223 OT-223 P008B DIODE STN2N10L STN2N10

    ste30na50

    Abstract: STP3N60FI STE45N50 STHV82 stk2n50 ste24n90 STB55N06 ste38na50 STP55NE06FP STB40N03L-20
    Text: SOT-223 VDSS RDS on max (V) (Ω) 30 0.05 0.06 0.12 0.12 0.12 0.27 0.45 1.50 20.0 60 100 200 800 Type STN4NE03L STN4NE03 STN3NE06 STN3NE06L STN3NE06L STN2N10 STN2NE10L STN1N20 STN1NB80 ✠ ID(cont) DEVICES (A) REPLACED 4.0 4.0 3.0 3.0 3.0 2.0 2.0 1.0


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    PDF OT-223 STN4NE03L STN4NE03 STN3NE06 STN3NE06L STN2N10 STN2NE10L STN1N20 STN1NB80 ste30na50 STP3N60FI STE45N50 STHV82 stk2n50 ste24n90 STB55N06 ste38na50 STP55NE06FP STB40N03L-20

    IRF540 complementary

    Abstract: IRFZ44N complementary std2n52 TOSHIBA IRFZ44A datasheet STP2NA60 SSH6N80 rfp60n06 ste38na50 IRF630 complementary IRF3205 IR
    Text: Sales type RFP6N50 RFD16N03LSM RFP15N05L RFP50N05 RFP15N05 RFP50N05L RFD14N05L RFD14N05LSM RFD14N05SM RFP14N05L RFP25N05 RFP14N05 HUF75344P3 HUF75344S3S HUF75345S3S HUF75345G3 HUF75343S3S HUF75307D3S HUF75344G3 HUF75345P3 HUF75343P3 HUF5343G3 HUF75321P3 HUF75329P3


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    PDF RFP6N50 RFD16N03LSM RFP15N05L RFP50N05 RFP15N05 RFP50N05L RFD14N05L RFD14N05LSM RFD14N05SM RFP14N05L IRF540 complementary IRFZ44N complementary std2n52 TOSHIBA IRFZ44A datasheet STP2NA60 SSH6N80 rfp60n06 ste38na50 IRF630 complementary IRF3205 IR

    STP3N60FI

    Abstract: IRF540 complementary IRF640 complementary ste38na50 STE45N50 IRF630 complementary STP6NA80FP STD1NB60 IRF730 complementary ste24n90
    Text: May ‘99 TO-220 VDSS RDS on max (V) (Ω) 30 0.004 0.006 0.01 0.012 0.0155 0.02 0.022 0.022 0.045 0.05 0.008 0.015 0.028 0.04 0.055 0.07 0.1 0.006 0.006 0.01 STP80NF03L-04 STP80NE03L-06 STP60NE03L-10 STP60NE03L-12 STP3015L STP40NE03L-20 STP40NF03L STP3020L


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    PDF O-220 STP80NF03L-04 STP80NE03L-06 STP60NE03L-10 STP60NE03L-12 STP3015L STP40NE03L-20 STP40NF03L STP3020L STP30NE03L STP3N60FI IRF540 complementary IRF640 complementary ste38na50 STE45N50 IRF630 complementary STP6NA80FP STD1NB60 IRF730 complementary ste24n90

    SSH6N80

    Abstract: IRF640 equivalent buz100 equivalent ste38NA50 irf540 equivalent stp2na60 buz10 equivalent BUK444 equivalent 2SK2700 equivalent BUZ71 equivalent
    Text: Power MOSFETs Cross Reference INDUSTY STANDARD 2SK1119 2SK1120 2SK1151 2SK1152 2SK1153 2SK1154 2SK1155 2SK1156 2SK1157 2SK1158 2SK1159 2SK1160 2SK1161 2SK1162 2SK1163 2SK1164 2SK1165 2SK1166 2SK1167 2SK1168 2SK1169 2SK1170 2SK1199 2SK1202 2SK1203 2SK1204 2SK1205


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    PDF 2SK1119 2SK1120 2SK1151 2SK1152 2SK1153 2SK1154 2SK1155 2SK1156 2SK1157 2SK1158 SSH6N80 IRF640 equivalent buz100 equivalent ste38NA50 irf540 equivalent stp2na60 buz10 equivalent BUK444 equivalent 2SK2700 equivalent BUZ71 equivalent

    Untitled

    Abstract: No abstract text available
    Text: rZ Z SGS-THOMSON ^7# MDOi@ilL[i Sra M(gS STN2N10L N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYP E STN2N10L V dss RDS(on Id 100 V < 0.5 a 2 A • TYPICAL RDS(on) = 0.35 £1 ■ AVALANCHE RUGGED TECHNOLOGY . SOT-223 CAN BE WAVE OR REFLOW SOLDERED . AVAILABLE IN TAPE AND REEL ON


    OCR Scan
    PDF STN2N10L OT-223 OT-223 OT223 007745b

    2n10l

    Abstract: n10l
    Text: * 7# TYPE STN 2N 10L SGS-THOMSON [MOeiMillLieraeiDIgS S T N 2 N1 0 L N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR V dss RDS on Id 100 V < 0.5 Ç1 2 A • TYPICAL RDS(on) = 0.35 £2 . AVALANCHE RUGGED TECHNOLOGY . SOT-223 CAN BE WAVE OR REFLOW SOLDERED


    OCR Scan
    PDF OT-223 OT-223 2n10l n10l