STATIC RAM WITH DATA RETENTION Search Results

48Z02

Abstract: 232268 "lithium battery pack" pinout
Contextual Info: Issued March 1997 232-2683 Data Pack H Static RAM with battery back-up 48Z02 Data Sheet RS stock number 301-016 A 2K ϫ 8 bit CMOS static RAM with integral lithium batteries giving data retention for up to ten years. All control and switching circuitry is included on chip for data

48Z02

Abstract: "lithium battery pack" pinout
Contextual Info: Issued March 1987 005-471 Data Pack H Static RAM with battery back-up 48Z02 Data Sheet RS stock number 301-016 A 2K ϫ 8 bit CMOS static RAM with integral lithium batteries giving data retention for up to ten years. All control and switching circuitry is included on chip for data

EDI8F81025C100B6C

Abstract: EDI8F81025C70B6C EDI8F81025C85B6C EDI8F81025LP70B6C
Contextual Info: EDI8F81025C 1Megx8 SRAM Module 1Megx8 Static RAM CMOS, Module Features The EDI8F81025C is an 8 megabit CMOS Static RAM based on two 512Kx8 Static RAMs mounted on a multilayered epoxy laminate FR4 substrate. A low power version with data retention (EDI8F81025LP) is

H547

Contextual Info: Issued March 1987 H5471 Static RAM with battery back-up48Z02 Stocknumber 301-016 A 2K x 8 bit CMOS static RAM with integral lithium batteries giving data retention for up to ten years. All control and switching circuitry is included on chip for data integrity at all times.

L6116PC85

Abstract: L6116NC35 L6116PC35 cy6116 L6116PC45 IDT6116 L6116NC85 L6116PC20
Contextual Info: L6116 2K x 8 Static RAM Features Description □ 2K by 8 Static RAM with chip select powerdown, output enable The L6116 is a high-performance, lowpower CMOS static RAM. The storage circuitry is organized as 2048 words by 8 bits per word. The 8 Data In and Data Out signals share I/O

L7C185NC85

Abstract: l7c185uc85 L7C185NC45 ma 8630 IDT7164 L7C185PC20 L7C185PC25 L7C185PC45 L7C185PC85 L7C185NC35
Contextual Info: L7C185 8K x 8 Static RAM Features Description □ 8K by 8 Static RAM with chip select powerdown, output enable The L7C185 is a high-performance, low-power CMOS static RAM. The storage circuitry is organized as 8,192 words by 8 bits per word. The 8 Data In and Data Out signals share I/O

PCF8570CP

Abstract: PCF8570CT
Contextual Info: INTEGRATED CIRCUITS DATA SHEET PCF8570C 256 x 8-bit static low-voltage RAM with I2C-bus interface Preliminary specification Supersedes data of August 1994 File under Integrated Circuits, IC12 1997 Apr 01 Philips Semiconductors Preliminary specification 256 × 8-bit static low-voltage RAM with

ddr ram repair

Abstract: PCF8570CP PCF8570CT
Contextual Info: INTEGRATED CIRCUITS DATA SHEET PCF8570C 256 x 8-bit static low-voltage RAM with I2C-bus interface Preliminary specification Supersedes data of August 1994 File under Integrated Circuits, IC12 1997 Apr 01 Philips Semiconductors Preliminary specification 256 × 8-bit static low-voltage RAM with

ic software program pcf8583

Abstract: PCF8583 PCF8583P PCF8583T Philips pcf8583p PCF8583 an MRB003
Contextual Info: INTEGRATED CIRCUITS DATA SHEET PCF8583 Clock Calendar with 256 x 8-bit Static RAM Product specification File under Integrated Circuits, IC01 October 1991 Philips Semiconductors Product specification Clock Calendar with 256 x 8-bit Static RAM PCF8583 FEATURES

Contextual Info: L6 1 1 6 2K x 8 Static RAM Features Description_ □ 2K by 8 Static RAM with chip select powerdown, output enable The L6116 is a high-performance, lowpower CMOS static RAM. The storage circuitry is organized as 2048 words by 8 bits per word. The 8 Data

Contextual Info: U621708 128K x 8 SRAM Features Description S 131072 x 8 bit static CMOS RAM S 70 ns Access Time S Common data inputs and The U621708 is a static RAM manufactured using a CMOS process technology with the following operating modes: - Read - Standby - Write - Data Retention

PCF8570P

Abstract: PCF8570 PCF8570T
Contextual Info: INTEGRATED CIRCUITS DATA SHEET PCF8570 256 x 8-bit static low-voltage RAM with I2C-bus interface Product specification Supersedes data of 1997 Sep 02 File under Integrated Circuits, IC12 1999 Jan 06 Philips Semiconductors Product specification 256 × 8-bit static low-voltage RAM with

Contextual Info: L7C162 16K x 4 Static RAM DEVICES INCORPORATED FEATURES DESCRIPTION □ 16K x 4 Static RAM with Separate I /O and High Impedance Write The L7C162 is a high-performance, low-power CMOS static RAM. The storage cells are organized as 16,384 words by 4 bits per word. Data In and

PCF8570P

Abstract: P80CLXXX PCF8570 PCF8570T
Contextual Info: INTEGRATED CIRCUITS DATA SHEET PCF8570 256 x 8-bit static low-voltage RAM with I2C-bus interface Preliminary specification File under Integrated Circuits, IC12 Philips Semiconductors August 1994 Philips Semiconductors Preliminary specification 256 × 8-bit static low-voltage RAM with

P80CLXXX

Abstract: PCF8570 PCF8570P PCF8570T MBA605
Contextual Info: INTEGRATED CIRCUITS DATA SHEET PCF8570 256 x 8-bit static low-voltage RAM with I2C-bus interface Preliminary specification File under Integrated Circuits, IC12 Philips Semiconductors August 1994 Philips Semiconductors Preliminary specification 256 × 8-bit static low-voltage RAM with

LCC 18 Pin Package

Abstract: LCC 16 Pin Package E12M
Contextual Info: ma EDI8464C Electronic DeilQns Inc. High Speed 256K Monolithic SRAM 64Kx4 Static RAM CMOS, High Speed Monolithic Features The EDI8464C is a high performance CMOS Static RAM organized as 64Kx4 and it is also available in a low power version, EDI8464LP, with data retention.

Contextual Info: INTEGRATED CIRCUITS DAT PCF8570 256 x 8-bit static low-voltage RAM with I2C-bus interface Product specification Supersedes data of 1997 Sep 02 File under Integrated Circuits, IC12 1999 Jan 06 Philips Semiconductors Product specification 256 × 8-bit static low-voltage RAM with

Contextual Info: Standard Products UT7C138/139 4Kx8/9 Radiation-Hardened Dual-Port Static RAM with Busy Flag Data Sheet January 2002 FEATURES INTRODUCTION G 45ns and 55ns maximum address access time G Asynchronous operation for compatibility with industrystandard 4K x 8/9 dual-port static RAM

Contextual Info: 128KX8 NON-VOLATILE RAM M s iR u m m u R • • • • • • GR12882 Plug-in replacement for Static RAM 20 years data retention No erasure required Fast power down Functions as Data or Program RAM No limit to number of programing cycles GR12882 is 128 kilobyte of non-volatile memory which is pin-compatible with normal Static RAM and offers immediate conversion to

7C13

Abstract: UT7C138 UT7C139 4Kx8 Dual-Port Static RAM 7L Marking
Contextual Info: Standard Products UT7C138/139 4Kx8/9 Radiation-Hardened Dual-Port Static RAM with Busy Flag Preliminary Data Sheet Dec. 1997 FEATURES INTRODUCTION q 45ns and 55ns maximum address access time q Asynchronous operation for compatibility with industrystandard 4K x 8/9 dual-port static RAM

5962F1123501QXA

Abstract: SECDED CYPT1049DV33-12FZMB
Contextual Info: CYRS1049DV33 4-Mbit 512 K x 8 Static RAM with RadStop Technology 4-Mbit (512 K × 8) Static RAM with RadStop™ Technology Radiation Performance • Radiation Data Features characteristics in a 36-pin ceramic flat package ■ Total dose 300 Krad

a7r smd

Abstract: smd marking A4L smd a4l A1L smd
Contextual Info: Standard Products UT7C138/139 4Kx8/9 Radiation-Hardened Dual-Port Static RAM with Busy Flag Preliminary Data Sheet Dec. 1997 FEATURES INTRODUCTION q 45ns and 55ns maximum address access time q Asynchronous operation for compatibility with industrystandard 4K x 8/9 dual-port static RAM

dualport

Abstract: smd dual diode A4l smd transistor marking a5l A1L smd diode SMD A11L smd a4l smd transistor A7R marking a7r smd SMD A9L smd diode a3l
Contextual Info: Standard Products UT7C138/139 4Kx8/9 Radiation-Hardened Dual-Port Static RAM with Busy Flag Data Sheet January 2002 FEATURES INTRODUCTION q 45ns and 55ns maximum address access time q Asynchronous operation for compatibility with industrystandard 4K x 8/9 dual-port static RAM

Contextual Info: S-2517RL 16K-bit CMOS static RAM The S-2517RL is a 2048-word x 8-bit CMOS static RAM. Its complete CMOS static memory cell provides low power consumption during standby and good reliability. All inputs and outputs can interface directly with T T L data bus.