ST93C57 Search Results

Contextual Info: / Z T SGS-THOMSON *7#» »»IUI !! «©® ST93C56, 56C ST93C57C SERIAL MICROWIRE BUS 2K 128 x 16 or 256 x 8 EEPROM • 1 MILLION ERASE/WRITE CYCLES, with 40 YEARS DATA RETENTION ■ DUAL ORGANIZATION: 128 x 16 or 256 x 8 ■ BYTE/WORD and ENTIRE MEMORY

diode 56c

Abstract: ST93C56 ST93C57C
Contextual Info: ST93C56, 56C ST93C57C SERIAL MICROWIRE BUS 2K 128 x 16 or 256 x 8 EEPROM 1 MILLION ERASE/WRITE CYCLES, with 10 YEARS DATA RETENTION DUAL ORGANIZATION: 128 x 16 or 256 x 8 BYTE/WORD and ENTIRE MEMORY PROGRAMMING INSTRUCTIONS SELF-TIMED PROGRAMMING CYCLE with

M93C56

Abstract: ST93C56 ST93C56C ST93C57C
Contextual Info: ST93C56, 56C ST93C57C 2K 128 x 16 or 256 x 8 SERIAL MICROWIRE EEPROM NOT FOR NEW DESIGN 1 MILLION ERASE/WRITE CYCLES, with 40 YEARS DATA RETENTION DUAL ORGANIZATION: 128 x 16 or 256 x 8 BYTE/WORD and ENTIRE MEMORY PROGRAMMING INSTRUCTIONS SELF-TIMED PROGRAMMING CYCLE with

Contextual Info: /T T SGS-THOMSON ^ 7 # . HDlg^OllLIgTOOIfSlDgi ST93C56, 56C ST93C57C SERIAL M ICR O W IR E BUS 2K 128 x 16 or 256 x 8 EEPROM • 1 MILLION ERASE/WRITE CYCLES, with 40 YEARS DATA RETENTION ■ DUAL ORGANIZATION: 1 2 8 x1 6 or 2 5 6 x 8 ■ BYTE/WORD and ENTIRE MEMORY

ST93C56

Contextual Info: ST93C56, 56C ST93C57C 2K 128 x 16 or 256 x 8 SERIAL MICROWIRE EEPROM NOT FOR NEW DESIGN 1 MILLION ERASE/WRITE CYCLES, with 40 YEARS DATA RETENTION DUAL ORGANIZATION: 128 x 16 or 256 x 8 BYTE/WORD and ENTIRE MEMORY PROGRAMMING INSTRUCTIONS SELF-TIMED PROGRAMMING CYCLE with

Contextual Info: ST93C56, 56C ST93C57C SERIAL MICROWIRE BUS 2K 128 x 16 or 256 x 8 EEPROM 1 MILLION ERASE/WRITE CYCLES, with 40 YEARS DATA RETENTION DUAL ORGANIZATION: 128 x 16 or 256 x 8 BYTE/WORD and ENTIRE MEMORY PROGRAMMING INSTRUCTIONS SELF-TIMED PROGRAMMING CYCLE with

mn4117405

Abstract: NN5118165 XL93LC46AP NN514265 MS6264L-10PC w24M257 NN514265A w24m257ak-15 HY62256ALP10 mhs p80c51
Contextual Info: ISSI CROSS REFERENCE GUIDE Integrated Silicon Solution, Inc. ISSI ® Integrated Silicon Solution, Inc. CROSS REFERENCE GUIDE SRAM DRAM EEPROM EPROM MICROCONTROLLER JUNE 1999 Integrated Silicon Solution, Inc. CP005-1F 6/1/99 1 ISSI CROSS REFERENCE GUIDE

asm eagle

Abstract: M28F101 M28F102 M28F201 M28F256 M28F512 texas 4mb dram M27C1024 Parallel NOR Flash Market MBX860
Contextual Info: MEMORY SELECTOR Leading Edge Memories Index page Leading Edge Memories 1 Why a Broad Range? 2 Technology, Upgrades and Quality 6 Flash Memories: application flexibility 8 EEPROM and ASM: higher performance 10 OTP and UV EPROM: dependable solutions 14 Non-Volatile RAM:

PSO14

Contextual Info: rz 7 A 7 l S G S -T H O M S O N ö ttJ ü in fä M tg ! ST93C S57 2 K BITS 128 x 16 SERIAL ACCESS CMOS EEPROM MEMORY • 2.5V - 5.5V SINGLE POWER SUPPLY IN ALL MODES . USER DEFINED SIZE OF A MEMORY SEC ­ TION PROTECTED AGAINST WRITE. . WORD AND PAGE WRITE MODES.

Contextual Info: / Z T SGS-IHOMSON ST93C56, 56C * 71 , ST93C57C 2K 128 X 16 or 256 x 8 SERIAL MICROWIRE EEPROM NOT FOR NEW DESIGN • 1 MILLION ERASE/WRITE CYCLES, with 40 YEARS DATA RETENTION > DUAL ORGANIZATION: 1 2 8 x1 6 or 2 5 6 x 8 ■ BYTE/WORD and ENTIRE MEMORY

UM61256AK-15

Abstract: UM61256ak sram um61256ck-20 HY62256ALP10 XL93LC46AP w24m257 GVT7164D32Q-6 km62256blg-7 w24m257ak-15 UM61256
Contextual Info: ISSI CROSS REFERENCE GUIDE Integrated Silicon Solution, Inc. ISSI ® Integrated Silicon Solution, Inc. CROSS REFERENCE GUIDE SRAM DRAM EEPROM EPROM FLASH MICROCONTROLLER SERIAL FLASH JULY 1998 Integrated Silicon Solution, Inc. CP005-1E 7/1/98 1 ISSI CROSS REFERENCE GUIDE

s2914a

Abstract: ak6416af s2914 ATMEL 24C32A S-29255 AK6416A AK93C12A national semiconductor cmos ATMEL 93C86 93c45
Contextual Info: データシート マイクロワイヤー TMタイプ . SCIタイプ（Serial Communication Interface） . I2CTMタイプ .

Contextual Info: r Z Z SGS-THOMSON ST93CS57 s 2 K BITS 128 x 16 SERIAL ACCESS CMOS EEPROM MEMORY • 2.5V - 5.5V SINGLE POWER SUPPLY IN ALL MODES ■ USER DEFINED SIZE OF A MEMORY SEC­ TION PROTECTED AGAINST WRITE. ■ WORD AND PAGE WRITE MODES. ■ HIGHLY INCREASED RELIABILITY OF CMOS

PJ 1179

Abstract: M27512 12b1 M27F512 ST24C08B1 M27C256B-12F1 ST93C46AB1 m27c4001-12f1 m48z32y M27C1001-20F1 ST24C04CM6TR
Contextual Info: MEMORY SELECTOR Leading Edge Memories GO Leading Edge Memories Leading Edge Memories Flash Memories Serial and Parallel EEPROMs Application Specific Memories UV and OTP EPROMs Non-Volatile RAMs Broad Range SGS-THOMSON is a world leader in non-volatile memories, manufacturing a

M93C46BN1

Abstract: PLCC32 512k M24C32MN1 M93S46RBN1 ST24C04M1 M2716-1F1 200N1 M28F512-15C1 M27C1024-12F7 M27C256B-20C7
Contextual Info: MEMORIES and SMARTCARD PRODUCTS NON VOLATILE MEMORIES UV EPROM - NMOS Size Part Number Organis. Speed ns VCC Range ICC / Stby Temperature Range (°C) Package 16K M2716-1F1 x8 350 5V ± 10% 100mA/25mA 0 to 70 FDIP24W 16K M2716-1F6 x8 350 5V ± 10% 100mA/25mA

am29ma16

Abstract: AM29M16 AM29M16 PLD atmel 404 93c46 29f512 gal18v8 ATMEL 24C32A COP8622C atmel 93C46 AT27040
Contextual Info: Ironwood Electronics Programming Adapters PR.1 Programming Adapters allow the programming of PROM, PLD, EPROM, EEPROM or PAL devices on programmers or ATE equipment with DIP sockets. We support PLCC, LCC, PGA, SOIC including TSOP , FP, BGA and QFP packages.