Untitled
Abstract: No abstract text available
Text: SSM3J01F TOSHIBA Field Effect Transistor Silicon P Channel MOS Type SSM3J01F High Speed Switching Applications Unit: mm • Small package • Low on resistance : Ron = 0.4 Ω max (VGS = −4 V) : Ron = 0.6 Ω (max) (VGS = −2.5 V) • Low gate threshold voltage
|
Original
|
SSM3J01F
O-236MOD
SC-59
|
PDF
|
SSM3J01F
Abstract: No abstract text available
Text: SSM3J01F 東芝電界効果トランジスタ シリコンPチャネルMOS形 SSM3J01F ○ パワーマネジメントスイッチ ○ 高速スイッチング 単位: mm • 小型パッケージで高密度実装に最適 • オン抵抗が低い。 : Ron = 0.4 Ω max (VGS = −4 V)
|
Original
|
SSM3J01F
O-236MOD
SC-59
SSM3J01F
|
PDF
|
Untitled
Abstract: No abstract text available
Text: TOSHIBA SSM3J01F TOSHIBA FIELD EFFECT TRANSISTOR SILICON P CHANNEL MOS TYPE SSM3J01 F HIGH SPEED SWITCHING APPLICATIONS U nit in mm + 0.5 • Small Package • Low on Resistance • Low Gate Threshold Voltage : Ron = 0.4 Cl Max. (VQg : Ron = 0.6 O (Max.) (Vq s
|
OCR Scan
|
SSM3J01F
SSM3J01
O-236MOD
SC-59
|
PDF
|
Untitled
Abstract: No abstract text available
Text: SSM3J01F TOSHIBA Field Effect Transistor Silicon P Channel MOS Type SSM3J01F High Speed Switching Applications Unit: mm • Small package • Low on resistance : Ron = 0.4 Ω max (VGS = −4 V) : Ron = 0.6 Ω (max) (VGS = −2.5 V) • Low gate threshold voltage
|
Original
|
SSM3J01F
O-236MOD
SC-59
|
PDF
|
SSM3J01F
Abstract: No abstract text available
Text: SSM3J01F TOSHIBA Field Effect Transistor Silicon P Channel MOS Type SSM3J01F High Speed Switching Applications Unit: mm • Small package • Low on resistance : Ron = 0.4 Ω max (VGS = −4 V) : Ron = 0.6 Ω (max) (VGS = −2.5 V) • Low gate threshold voltage
|
Original
|
SSM3J01F
O-236MOD
SC-59
SSM3J01F
|
PDF
|
Untitled
Abstract: No abstract text available
Text: TOSHIBA SSM3J01F TOSHIBA FIELD EFFECT TRANSISTOR SILICON P CHANNEL MOS TYPE SSM3J01 F HIGH SPEED SWITCHING APPLICATIONS U nit in mm + 0.5 • Small Package • Low on Resistance • Low Gate Threshold Voltage : Ron = 0.4 Cl Max. (VQg : Ron = 0.6 O (Max.) (Vq s
|
OCR Scan
|
SSM3J01F
SSM3J01
O-236MOD
SC-59
|
PDF
|
SSM3J01F
Abstract: No abstract text available
Text: SSM3J01F TOSHIBA Field Effect Transistor Silicon P Channel MOS Type SSM3J01F High Speed Switching Applications Unit: mm • Small package • Low on resistance : Ron = 0.4 Ω max (VGS = −4 V) : Ron = 0.6 Ω (max) (VGS = −2.5 V) • Low gate threshold voltage
|
Original
|
SSM3J01F
O-236MOD
SC-59
SSM3J01F
|
PDF
|
SSM3J01F
Abstract: No abstract text available
Text: SSM3J01F TOSHIBA Field Effect Transistor Silicon P Channel MOS Type SSM3J01F High Speed Switching Applications Unit: mm • Small package · Low on resistance : Ron = 0.4 Ω max (VGS = −4 V) : Ron = 0.6 Ω (max) (VGS = −2.5 V) · Low gate threshold voltage
|
Original
|
SSM3J01F
O-236MOD
SC-59
SSM3J01F
|
PDF
|
SSM3J01F
Abstract: No abstract text available
Text: TO SH IBA SSM3J01F TOSHIBA FIELD EFFECT TRANSISTOR SILICON P CHANNEL MOS TYPE SSM3J01 F HIGH SPEED SWITCHING APPLICATIONS Unit in mm + 0.5 • Small Package • Low on Resistance • : Ron = 0.4 Cl Max. (VQg —4 V) : Ron = 0.6 O (Max.) (Vq s - 2 . 5 V)
|
OCR Scan
|
SSM3J01F
SSM3J01
SSM3J01F
|
PDF
|
Untitled
Abstract: No abstract text available
Text: TOSHIBA SSM3J01F TOSHIBA FIELD EFFECT TRANSISTOR SILICON P CHANNEL MOS TYPE SSM3J01 F HIGH SPEED SWITCHING APPLICATIONS • • • + 0.5 Small Package Low on Resistance : Ron = 0.4 Cl Max. (V qs = —4 V) : Ron = 0.6 il (Max.) (Vq s = -2 .5 V) LowGate Threshold Voltage
|
OCR Scan
|
SSM3J01F
SSM3J01
O-236MOD
SC-59
|
PDF
|
5252 F 1009 4-pin
Abstract: TPC 8028 MARKING S3H SOT363 TK8A50D equivalent tk6a65d equivalent 2SK4112 TPCA8030-H toshiba laptop charging CIRCUIT diagram TK80A08K3 TPCA*8025
Text: 2009-5 PRODUCT GUIDE MOSFETs SEMICONDUCTOR http://www.semicon.toshiba.co.jp/eng C O N T E N T S 1 Features and Structures . 3 2 Toshiba’s MOSFET Product Lines and Part Numbering Schemes . 4
|
Original
|
|
PDF
|
SSM3K7002
Abstract: ESM 310 SSM3J16FU SSM3K03TE zener diode reference guide SSM5N03FE US6 KEC SSM5G01TU 6798 SSM3J13T
Text: S-MOS Series Small-Signal MOSFETs for Switching PRODUCT GUIDE S -MOS Family S-MOS Family Toshiba presents a range of small-signal MOSFET S-MOS devices which have been developed for various switching, interface and DC/DC converter applications. These MOSFETs have been classified into families according to application,
|
Original
|
3402C-0209
SSM3K7002
ESM 310
SSM3J16FU
SSM3K03TE
zener diode reference guide
SSM5N03FE
US6 KEC
SSM5G01TU
6798
SSM3J13T
|
PDF
|
ESM 740
Abstract: transistor SMD t04 51 D245A LM2804 transistor SMD t04 Solar Garden Light Controller 4 pin 2fu smd transistor transistor t04 smd pnp Octal Darlington Transistor Arrays DIP WB126
Text: 2004-3 PRODUCT GUIDE General-Purpose Surface-Mount Devices semiconductor 2004 http://www.semicon.toshiba.co.jp/eng Greeting from Toshiba Toshiba Corporation has developed and provided key devices such as information equipment and information appliance, employing the most advanced technology.
|
Original
|
SCE0003A
ESM 740
transistor SMD t04 51
D245A
LM2804
transistor SMD t04
Solar Garden Light Controller 4 pin
2fu smd transistor
transistor t04 smd
pnp Octal Darlington Transistor Arrays DIP
WB126
|
PDF
|
2SK4207
Abstract: to220sis TPCA*8023 tk80A08K3 TPC8119 TK40A08K3 2SK4112 ssm3j16fs 2sk3568 TPC8A03
Text: 製品カタログ 2009-9 東芝半導体 製品カタログ MOSFET SEMICONDUCTOR h t t p : / / w w w. s e m i c o n . t o s h i b a . c o . j p / C O N T E N T S 1 特長と構造. 3
|
Original
|
BCJ0082B
BCJ0082A
2SK4207
to220sis
TPCA*8023
tk80A08K3
TPC8119
TK40A08K3
2SK4112
ssm3j16fs
2sk3568
TPC8A03
|
PDF
|
|
TPCA*8064
Abstract: TK12A10K3 TPCA8077 2SK3567 equivalent SSM3J328 TPCA8077-H TJ11A10M3 TK50E06K3A TPCA*8077 TPCA8028
Text: 2010-3 PRODUCT GUIDE MOSFETs h t t p : / / w w w. s e m i c o n . t o s h i b a . c o . j p / e n g C O N T E N T S 1 Features and Structures . 3 2 Toshiba’s MOSFET Product Lines and Part Numbering Schemes . 4
|
Original
|
BCE0082B
TPCA*8064
TK12A10K3
TPCA8077
2SK3567 equivalent
SSM3J328
TPCA8077-H
TJ11A10M3
TK50E06K3A
TPCA*8077
TPCA8028
|
PDF
|
8aa1
Abstract: esm 310 2SK982 733 SSOP10 kef q1 datasheet SSM3J13T SSM3K03TE 2SJ148 2SJ167 2SJ168
Text: 小型面実装MOS FET S-MOSシリーズ ● 当社は品質、信頼性の向上に努めておりますが、一般に半導体製品は誤作動した り故障することがあります。当社半導体製品をご使用いただく場合は、半導体製
|
Original
|
050106DAA1
12341D3AG
BDJ0099A
8aa1
esm 310
2SK982
733 SSOP10
kef q1 datasheet
SSM3J13T
SSM3K03TE
2SJ148
2SJ167
2SJ168
|
PDF
|
YTA630
Abstract: MTW14P20 BSS125 MTAJ30N06HD 2SK2837 equivalent SMU10P05 SMP60N06 replacement STE180N10 RFH75N05E IRFD620
Text: Power MOSFETs Cross Reference Alphanumerically Part Number VDSS V RDS(ON) (ohm) ID (A) PD (W) Package 2N7000 2N7002 2SJ377 2SJ378 2SJ380 2SJ401 2SJ402 2SJ407 2SJ412 2SJ419 2SJ420 2SJ421 2SJ438 2SJ439 2SJ464 2SJ465 2SJ468 2SJ469 2SJ482 2SJ507 2SJ508 2SJ509
|
Original
|
2N7000
2N7002
2SJ377
2SJ378
2SJ380
2SJ401
2SJ402
2SJ407
2SJ412
2SJ419
YTA630
MTW14P20
BSS125
MTAJ30N06HD
2SK2837 equivalent
SMU10P05
SMP60N06 replacement
STE180N10
RFH75N05E
IRFD620
|
PDF
|
TK12A10K3
Abstract: tk12a10k TK33A60V TPCA*8065 TK40E10K3 SSM6K407TU TPCA*8064 tk6a65d equivalent TPCA*8036 TK100G10N1
Text: Semiconductor Catalog 2012-3 MOSFETs SEMICONDUCTOR & STORAGE PRODUCTS http://www.semicon.toshiba.co.jp/eng C O N T E N T S 1 Features and Structures . 3 2 Toshiba’s MOSFET Product Lines and Part Numbering Schemes. 4
|
Original
|
|
PDF
|
tpc8118 equivalent replacement
Abstract: SSM3J307T Zener diode smd 071 A01
Text: 2009-9 PRODUCT GUIDE MOSFETs SEMICONDUCTOR http://www.semicon.toshiba.co.jp/eng C O N T E N T S 1 Features and Structures . 3 2 Toshiba’s MOSFET Product Lines and Part Numbering Schemes . 4
|
Original
|
BCE0082A
tpc8118 equivalent replacement
SSM3J307T
Zener diode smd 071 A01
|
PDF
|
TK12A10K3
Abstract: tk25e06k3 TK50E06K3A tk20e60u TPCA*8065 TJ11A10M3 SSM6J501NU TPCA8077 TJ9A10M3 TK8A10K3
Text: 製品カタログ 2010-9 東芝半導体 製品カタログ MOSFET S SE EM M II C CO ON ND DU UC C TT O OR R h t t p : / / w w w. s e m i c o n . t o s h i b a . c o . j p / C O N T E N T S 1 特長と構造. 3
|
Original
|
BCJ0082D
BCJ0082C
TK12A10K3
tk25e06k3
TK50E06K3A
tk20e60u
TPCA*8065
TJ11A10M3
SSM6J501NU
TPCA8077
TJ9A10M3
TK8A10K3
|
PDF
|
TPCA8077
Abstract: TK12A10K3 TK25E06K3 TPCA*8030 TJ11A10M3 SSM6J501NU TPCA8057-H 2SK4112 TPC8217-H TK50E06K3A
Text: 製品カタログ 2010-3 東芝半導体 製品カタログ MOSFET h t t p : / / w w w. s e m i c o n . t o s h i b a . c o . j p / C O N T E N T S 1 特長と構造. 3
|
Original
|
BCJ0082C
BCJ0082B
TPCA8077
TK12A10K3
TK25E06K3
TPCA*8030
TJ11A10M3
SSM6J501NU
TPCA8057-H
2SK4112
TPC8217-H
TK50E06K3A
|
PDF
|
SCS-70
Abstract: SSM6J08FU HN1K06FU
Text: 5 Small-Signal MOSFETs Toshiba present a range of small-signal MOSFET S-MOS devices developed for various switching and interface applications. The high-current S-MOS Family has been developed principally for high-current switching applications and has been added to
|
Original
|
SC-59)
SCS-70)
SSM6J06FU
SSM6J08FU
SSM6K07FU
SSM6J07FU
SSM3J13T
SSM3K11T
SSM3K01T
SSM3J01T
SCS-70
HN1K06FU
|
PDF
|
fet to92
Abstract: Pch MOS FET SSM3J13T SSM3J16FU ssm3k14t transistor ESM 2SK1830 2SK2035 2SK2825 SSM3J15TE
Text: Part Number SSM3K03TE SSM3K16TE SSM3K15TE SSM3J16TE SSM3J15TE SSM3K03FE SSM3K04FE 2SK1830 Nch 2SK2825 Nch 2SK2035 Nch SSM3K04FS SSM3K16FS SSM3K15FS 2SJ347 Pch SSM3J16FS SSM3J15FS 2SK1829 Nch 2SK2824 Nch 2SK2034 Nch 2SK2037 Nch SSM3K04FU SSM3K16FU SSM3K05FU
|
Original
|
SSM3K03TE
SSM3K16TE
SSM3K15TE
SSM3J16TE
SSM3J15TE
SSM3K03FE
SSM3K04FE
2SK1830
2SK2825
2SK2035
fet to92
Pch MOS FET
SSM3J13T
SSM3J16FU
ssm3k14t
transistor ESM
SSM3J15TE
|
PDF
|
TC7SZ08FU
Abstract: lm2804 TC7S14F sot-24 led TC7SZ126FU TC7SZ125FU SOT-24 te85l F TC7W04F 2sc2240 equivalent
Text: General-Purpose Small-Signal Surface-Mount Devices PRODUCT GUIDE CONTENTS 1. Package Information 3 to 6 2. Small Signal Transistors and Diodes 2.1 New Products 2.2 Small-Signal Transistors 2.3 Bias Resistor Transistora BRTs 6.1 Single Output type 6.2 Dual Output type
|
Original
|
3407C-0209
TC7SZ08FU
lm2804
TC7S14F
sot-24 led
TC7SZ126FU
TC7SZ125FU
SOT-24
te85l F
TC7W04F
2sc2240 equivalent
|
PDF
|