marking "BSs"
Abstract: No abstract text available
Text: BSS 110 SIPMOS Small-Signal Transistor • P channel • Enhancement mode • Logic Level • VGS th = -0.8.-2.0 V Pin 1 Pin 2 S Pin 3 G Type VDS ID RDS(on) Package Marking BSS 110 -50 V -0.17 A 10 Ω TO-92 SS 110 Type BSS 110 BSS 110 BSS 110 Ordering Code
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Q62702-S500
Q62702-S278
Q67000-S568
E6288
E6296
E6325
marking "BSs"
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2SC4503
Abstract: EA 5pin transistor murata flyback 10BQ015 GRM21BR61C475K SC4503 SC4503EVB SC4503TSKTRT CDC5D23B-4R7
Text: SC4503 1.3MHz Step-Up Switching Regulator with 1.4A Switch in ThinSOT PRELIMINARY POWER MANAGEMENT Description Features The SC4503 is a 1.3MHz current-mode step-up switching regulator with an integrated 1.4A power transistor. Its high switching frequency allows the use of tiny surface-mount
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SC4503
SC4503
MO-193,
TSOT-23
2SC4503
EA 5pin transistor
murata flyback
10BQ015
GRM21BR61C475K
SC4503EVB
SC4503TSKTRT
CDC5D23B-4R7
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VDDD21
Abstract: 24V DC-DC LED DRIVER Lighting Controllers YKW-06 PWM IC 8-PIN DIP soft-start
Text: 偉詮電子股份有限公司 YKW-06 Preliminary release Rev. 0.30（20060118） ` YKW-06 － Step-down Switching Controller GENERAL DESCRIPTION The YKW-06 is a step-down DC-DC converter. It could drivers an external power transistor using the PWM control.
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YKW-06
YKW-06
functiW-06
VDDD21
24V DC-DC LED DRIVER
Lighting Controllers
PWM IC 8-PIN DIP
soft-start
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BC857BM3T5G
Abstract: BC487 "cross-reference" 2N3904 PNP BC237 BC449 "cross-reference" MPS5172 "cross-reference" BC856BM3T5G
Text: Small−Signal Bipolar Transistors, JFETs, and Diodes In Brief . . . Page Bipolar Transistors General−Purpose Transistors . . . . . . . . . . . . . . . . . . 25 General−Purpose Multiple Transistors . . . . . . . . . . 30 Low Noise and Good hFE Linearity . . . . . . . . . . . . . 31
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OT-23
SC-59
SC-70
SC-75,
SC-90
OT-346
OT-323
OT-416
OT-523,
BC857BM3T5G
BC487 "cross-reference"
2N3904 PNP
BC237
BC449 "cross-reference"
MPS5172 "cross-reference"
BC856BM3T5G
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442BR
Abstract: No abstract text available
Text: ANALOG DEVICES LC2M0S Quad SPST Switches ADG441/ADG442/ADG444 FEATURES 44 V Supply Maxim um Ratings V ss to V DD Analog Signal Range Low On Resistance < 70 ft Low AR0 n (9 max) Low Ron Match (3 Q max) Low Power Dissipation Fast Switching Times t 0N < 110 ns
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ADG441/ADG442/ADG444
DG201A/ADG201A,
DG202A/ADG202A,
DG211/ADG211A
441/D
442/DG
/ADG442/AD
R-16A)
004274b
442BR
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photodiode BPW50
Abstract: BPW50 phototransistors BPX25 Phototransistor photodiode lumen Phototransistor bpx25 bpw41 BPX-25 ZM100
Text: SILICON PLANAR PHOTOTRANSISTORS GENERAL APPLICATIO NS OF ZETEX P H O TO TRAN SIST O RS A larm S y ste m s, P ro c e ss Control, Ed ge and Position S e n sin g , Optical C haracter Recognition, Tape Readers, Card Readers, Electronic Flash Control, etc. ZM 100 SERIES TO-18 HERMETIC ZM100/110, BPX25/29
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ZM100
ZM100/110,
BPX25/29)
ZM110
BPX25
ZM210
950nm
photodiode BPW50
BPW50
phototransistors
Phototransistor
photodiode lumen
Phototransistor bpx25
bpw41
BPX-25
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DIODE WJ SOt23
Abstract: 7.a sot-23 marking BSs sot23
Text: S IE M F N S SIPMOS Small-Signal Transistors BSS 84 BSS 110 VDS = -5 0 V lD = - 0 .1 3 /- 0 .1 7 A ^DS on = 10 Q • P channel • Enhancem ent mode • Packages: SOT-23, TO-92 (BSS 110) SOT-23 (BSS 84) D S TO -92 ') Type Marking Ordering code for version on
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OT-23
OT-23,
62702-S
DIODE WJ SOt23
7.a sot-23
marking BSs sot23
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bss110
Abstract: 017adc bss84
Text: PAIRCHII-D June 1995 M ICDNDUCTQ R tm BSS84/ BSS110 P-Channel Enhancement Mode Field Effect Transistor General Description Features These P-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is
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BSS84/
BSS110
BSS84:
BSS110:
BSS84
017adc
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Untitled
Abstract: No abstract text available
Text: SIEMENS BSS 110 SIPMOS Small-Signal Transistor • P channel • Enhancement mode • Logic Level • ^GS th = -0 .8 .-2 .0 V Type BSS 110 Vbs -50 V % -0.17 A Type BSS 110 BSS 110 BSS 110 Ordering Code Q62702-S500 Q62702-S278 Q67000-S568 ffDS(on) 10ß
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Q62702-S500
Q62702-S278
Q67000-S568
E6288
E6296
E6325
BSS110
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Untitled
Abstract: No abstract text available
Text: SIEMENS BSS 110 SIPMOS Small-Signal Transistor • P channel • Enhancement mode • Logic Level ' ^GS th = -0.8.-2.0 V Type BSS 110 ^DS -50 V Type BSS 110 BSS 110 BSS 110 Ordering Code Q62702-S500 Q62702-S278 Q67000-S568 -0.17 A ffDS(on) Package Marking
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Q62702-S500
Q62702-S278
Q67000-S568
E6288
E6296
E6325
BSS110
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2SK1362
Abstract: transistor SS 110
Text: TOSHIBA 2SK1362 Field Effect Transistor Silicon N Channel MOS Type rc-MOS II High Speed, High Current Switching Applications Features • High Breakdown Voltage ' V (BR)DSS = 9 0 0 V • High Forward Transfer Admittance - y,s = 1 -7 S Hyp-) • Low Leakage Current
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2SK1362
100nA
2SK1362
transistor SS 110
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PHW7N60
Abstract: No abstract text available
Text: Philips Semiconductors Product specification PowerMOS transistor PINNING - SOT429 T0247 PARAMETER Drain-source voltage Drain current (DC) Total power dissipation Drain-source on-state resistance Id F*tol RdS(ON) PIN CONFIGURATION MAX. UNIT 600 7 147 1.2
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PHW7N60
OT429
T0247)
PHW7N60
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Untitled
Abstract: No abstract text available
Text: Tem ic siiiconix_ VN3515L/VN4012L N-Channel Enhancement-Mode MOS Transistors Product Summary Part Num ber V BR DSS VN3515L VN4012L r DS(on) M ax (£2) (V ) 15 @ VGS = 4.5 V 0.6 to 1.8 0.15 400 12 @ V GS = 4.5 V 0.6 to 1.8 0.16 Applications
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VN3515L/VN4012L
VN3515L
VN4012L
P-38281--Rev.
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NE41607
Abstract: NC921 Z171 NE41600 ne41635 2SC2025 50m1n NE416 NE41615 Z128
Text: NEC/ CALIFORNIA SbE ]> NEC • b4E7Mm OOOSBTG 27ê BINECC NPN MEDIUM POWER UHF-VHF TRANSISTOR NE416 SERIES FEATURES DESCRIPTION AND APPLICATIONS • L O W N O IS E FIG U R E : 1 d B at 70 M H z The N E416 series of N P N transistors is one of the most versatile and widely used of N E C 's microwave transistors. T h e
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b427mM
NE416
NE41635
DE161
NE41607
NC921
Z171
NE41600
2SC2025
50m1n
NE41615
Z128
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Untitled
Abstract: No abstract text available
Text: 45E J> m TGTVESQ IT0S4 0017fl3D 2 2SJ115 "T-sq-z-i> TOSHIBA FIELD EFFECT TRANSISTOR SILICON P CHANNEL MOS TYPE TOSHIBA DISCRETE/OPTO Unit in mm AU DI O FREQUENCY POWER AM PL IF IE R APPLICATION. 0 3 .2 t a g 1S9MAX. FEATURES: . High Breakdown Voltage : V[)SS = ~160V
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0017fl3D
2SJ115
2SK405
10-CL25
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Untitled
Abstract: No abstract text available
Text: Phi l i ps S e m i c o n d u c t o r s P r o d u c t speci f i cat i on T r e n c h M O S transistor L o g i c level F E T G E N E R A L DESCRI PTIO N N-channel enhancement mode logic level tield-ettect power transistor in a plastic envelope suitable tor surtace
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BUK9675-55
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BUZ90A
Abstract: No abstract text available
Text: _!_PowerMQS transistor_ BUZ90A^ N AMER PHILIPS/DISCRETE QbE D • ^53*131 0014556 2 ■ r - 3 9 - i/ May 1987 GENERAL DESCRIPTION N-channel enchancement mode field-effect power transistor in a plastic envelope. The device is intended for use in
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BUZ90A^
T-39-11
0D14S3a
BUZ90A
bbS3131
0Q14534
BUZ90A
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buz41a
Abstract: No abstract text available
Text: PowerMOS transistor_ BUZ41A N AMER PHILIPS/DISCRETE OLE D • _ b b S B ' m 00144^3 T ■ T-n-l/ May 1987 GENERAL DESCRIPTION N-channel enchancement mode field-effect power transistor in a plastic envelope. The device is intended for use in Switched Mode Power Supplies
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BUZ41A
T-39-11-
bbS3T31
T-39-11
bb53T31
buz41a
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SSY20
Abstract: SF828 VEB mikroelektronik funkamateur BUX 127 SF126 SF 127 SF128 SF826 SF 829 B
Text: FUNKAMATEUR-Bauelementeinformation DDR-SiliziumTransistoren Typenübersicht Si-Transistoren des VEB Kombinat Mikroelektronik Grenzdaten Zonen Vorzugs anwendungen2 folge P,o, [mW, W ] Typ1 Kenndaten UcBO U ceO T • T * 1C , ACsat [V] [V] [mA, (A)] fiT3
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Untitled
Abstract: No abstract text available
Text: Philips Semiconductors Product specification PowerMOS transistor PHP3N20L Logic level GENERAL DESCRIPTION N-channel enhancement mode logic level field-effect power transistor in a plastic envelope featuring high
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PHP3N20L
T0220AB
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diode T96
Abstract: N10-13
Text: Philips Semiconductors Product specification T renchMOS transistor FEATURES PHN1013 SYMBOL QUICK R EFEREN CE DATA • 'Trench' technology • Low on-state resistance • Fast switching • Stable off-state characteristics • High thermal cycling performance
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PHN1013
N1013
diode T96
N10-13
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2N2440
Abstract: 2N1837 2n1840 BSX46-S 2N3553 NPN bc140 transistor 2n2270 BF336 BSY52 2n657 sal
Text: TO-39 METAL-CAN PACKAGE TRANSISTORS NPN Type No. VCBO (V) Min V C EO V E BO (V) Min (V) Min ^CBO (MA) Max V CB hFE O (V) tc •& V C E (mA) (V) Min Max V C E (Sal) & V B E (Sal) ® (V) M ax 'c (V) (mA) Min Max 3.000 10.0 0.75 15 10.000 10.0 1.00 360 40
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2N3439
2N3742
BF259
2N3440
BFY52
2N1B40
2N1S44
2N1990
2N2218
OOD020Ã
2N2440
2N1837
2n1840
BSX46-S
2N3553 NPN
bc140
transistor 2n2270
BF336
BSY52
2n657 sal
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702 sot 23
Abstract: transistor marking 7002
Text: Central 2N 7002 semiconductor Corp. N-CHANNEL ENHANCEMENT-MODE MOSFET DESCRIPTION: The CENTRAL SEMICONDUCTOR 2N7002 type is a N-Channel Field Effect Transistor, manufactured by the N-Channel DMOS Process, designed for high speed pulsed amplifier and driver applications.
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2N7002
OT-23
200mA
702 sot 23
transistor marking 7002
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transistor buz 10
Abstract: BUZ10 transistor Siemens 14 S S 92
Text: SIEMENS BUZ 10 Not for new design SIPMOS Power Transistor • N channel • Enhancement mode • Avalanche-rated Type BUZ 10 Vbs 50 V b 23 A ^DS on 0.07 a Package Ordering Code TO-220 AB C67078-S1300-A2 Maximum Ratings Parameter Symbol Continuous drain current
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O-220
C67078-S1300-A2
transistor buz 10
BUZ10
transistor Siemens 14 S S 92
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