BSS110 Search Results

BSS84

Abstract: BSS110
Contextual Info: FAIRCHILD M ay 1999 MICDNDUCTÜR i BSS84 / BSS110 P -Channel Enhancement Mode Field Effect Transistor General Description Features These P-Channel enhancem ent mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density

Contextual Info: BSS110 Transistors P-Channel Enhancement MOSFET Military/High-RelN V BR DSS (V)50 V(BR)GSS (V)20 I(D) Max. (A)170m I(DM) Max. (A) Pulsed I(D) @Temp (øC) IDM Max (@25øC Amb)680m @Pulse Width (s) (Condition) Absolute Max. Power Diss. (W)630m Minimum Operating Temp (øC)-55

Contextual Info: F /M R C H II-D May 1999 M ICONDUCTQR i BSS84 / BSS110 P -Channel Enhancement Mode Field Effect Transistor Features General Description These P-Channel enhancem ent mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density

BSS110

Abstract: BSS84
Contextual Info: May 1999 BSS84 / BSS110 P-Channel Enhancement Mode Field Effect Transistor General Description Features These P-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density

bss110

Abstract: 017adc bss84
Contextual Info: PAIRCHII-D June 1995 M ICDNDUCTQ R tm BSS84/ BSS110 P-Channel Enhancement Mode Field Effect Transistor General Description Features These P-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is

BSS84

Abstract: ROB SOT23 BSS110
Contextual Info: National Semiconductor~ June 1995 BSS84 / BSS110 P-Channel Enhancement Mode Field Effect Transistor General Description Features These P-Channel enhancement mode power field effect transistors are produced using National's proprietary, high cell density, DMOS technology.

BSS110

Abstract: BSS84 CBVK741B019 F63TNR PN2222N
Contextual Info: May 1999 BSS84 / BSS110 P-Channel Enhancement Mode Field Effect Transistor General Description Features These P-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density

BSS110

Abstract: BSS84
Contextual Info: May 2000 BSS84 / BSS110 P-Channel Enhancement Mode Field Effect Transistor General Description Features These P-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density

BSS110

Abstract: CGY20
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET BSS110 P-channel enhancement mode vertical D-MOS transistor Product specification File under Discrete Semiconductors, SC07 Philips Semiconductors 1995 Apr 07 Philips Semiconductors Product specification P-channel enhancement mode

TRANSISTOR D 570

Abstract: BSS110 INFINEON BSS110 B34 transistor
Contextual Info: Philips Semiconductors Product specification P-channel enhancement mode vertical D-MOS transistor BSS110 FEATURES • Low threshold voltage • Direct interface to C-MOS, TTL, etc. • High speed switching • No secondary breakdown. APPLICATIONS • Intended for use as a Line current interruptor in

DS2505

Abstract: 007H DS2505P DS2505T DS2505V 2n7000 equivalent
Contextual Info: DS2505 DS2505 16K bit Add–Only Memory FEATURES • 16384 bits Electrically Programmable Read Only Memory EPROM communicates with the economy of one signal plus ground • Unique, factory–lasered and tested 64–bit registration number (8–bit family code + 48–bit serial number

16-Bit-CRC

Abstract: DS1985 DS1985-F3 DS1985-F5 DS9092 DS9093F DS9093RA DS9096P DS9101
Contextual Info: DS1985 "I 6K SPECIAL FEATURES • 163 8 4 -b its Electrically Program m able Read Only M em ory EPR O M com m unicates with the econom y of one signal plus ground • EPROM partitioned into s ix ty -fo u r 2 5 6 -b it pages for random ly accessing packetized data records

Contextual Info: DS1986 PRELIMINARY 64K bit Add— Only {Button SPECIAL FEATURES COMMON {Button FEATURES • 6 5 5 36 -b its Electrically Program mable Read Only M em ory EPROM com m unicates with the econom y of one signal plus ground • Unique, fa ctory-lasered and tested 6 4 -b it registra­

dallas 2502

Abstract: dallas ds2502 C3H 6-pin SOIC DS2502 BSS110 DS2502P DS2502S DS2502T DS2502V DS2502Y
Contextual Info: DS2502 DS2502 1Kbit Add–Only Memory FEATURES PIN ASSIGNMENT • 1024 bits Electrically Programmable Read Only Memory EPROM communicates with the economy of one signal plus ground • Unique, factory–lasered and tested 64–bit registration number (8–bit family code + 48–bit serial number

DS2480B

Contextual Info: DS2480B Serial 1-Wire Line Driver with Load Sensor www.maxim-ic.com FEATURES § § § § § § § § § § § § § Universal, Common-Ground Serial Port to 1Wire Line Driver for MicroLAN Applications Works with All iButtons® and MicroLANCompatible 1-Wire Slave Devices

Contextual Info: DS1985 16-kbit Add-Only iButtonÒ www.iButton.com SPECIAL FEATURES § § § § § § § § 16384 bits Electrically Programmable Read Only Memory EPROM communicates with the economy of one signal plus ground EPROM partitioned into sixty-four 256-bit pages for randomly accessing packetized

TD2A

Abstract: B7S2 BSN10A TLC2272 4066 74AC04 MAX232N DATASHEET TD1A S1 UM1 MAX232N
Contextual Info: 20k CCW G N D 1 CONS1:4 CONS1:3 2 3 QP3 MPS2907A XM1 10MHz 2 A 1 3 14 n/c 15 MCLR 1N5242B 2 35 12 VCC QO1 DS1 1N5817 VN2222LL DO1 AOUT1 AOUT2 TRIGGER VREF TP2 XO1 GND GND <OSC2 MCLR VDD VDD 3 4 5 6 7 8 22p 44 43 42 41 39 38 37 36 TD1A TD1B TD2A TD2B DISCH

Contextual Info: DS2480B Serial to 1-Wire Line Driver FEATURES • •           Universal, Common-Ground Serial Port to | 1-Wire Line Driver Works with All iButton® and 1-Wire Slave Devices Communicates at Standard and Overdrive 1-Wire speed and Serial Port Data Rates of

SP2083

Abstract: ST72F344 ST72F521 74FCT 74HCT AN1179 ST662A ST72344 ST72F264 74HC40103
Contextual Info: ST7 FAMILY ICC Protocol REFERENCE MANUAL April 2003 1 USE IN LIFE SUPPORT DEVICES OR SYSTEMS MUST BE EXPRESSLY AUTHORIZED. STMicroelectronics PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF

BSS97

Abstract: 2SK564 BSS95 J3303 2SK616 buz349 2SK562 BUZ350 BSS98 BSS101
Contextual Info: SÉ*G siPMos«npicjnz., mííMüs-FET07r>ígíA a^\ iz)i,ammitâumæ£xyi&ÿi<D 4 IS H « ® *S S It« « A r5 *lC « fc O , r|])ALM aS-s±yV°9-M OS-FET^Z:'íífflU/c/-c j-^-ro jt* i= • e t ^ v ís ía •Z'fy+yymm m • M u ffig •-tzJb^ftCD/JvM-íb

EPROM MEMORY

Abstract: ic rom 2816 DS1986 DS1986-F3 DS9092 DS9093F DS9093RA DS9096P DS9101 2816b
Contextual Info: 19-4893; Rev 8/09 DS1986 64Kb Add-Only iButton www.maxim-ic.com COMMON iButton FEATURES SPECIAL FEATURES • •        65536 bits Electrically Programmable Read Only Memory EPROM communicates with the economy of one signal plus ground

Contextual Info: DS1985 16-kbit Add-Only iButtonTM www.dalsemi.com SPECIAL FEATURES 16384 bits Electrically Programmable Read Only Memory EPROM communicates with the economy of one signal plus ground EPROM partitioned into sixty-four 256-bit pages for randomly accessing packetized

BSS87

Abstract: BSP315 SOT223 BSP171 BSS125
Contextual Info: SIPMOS For complete package outlines, refer to pages PO-1 through PO-6 Low Power MOSFETs Type M axim um Ratings N = N Channel P = P Channel BSP17 BSP88 BSP89 BSP92 BSP 125 BSP129* BSP135* BSP149* BSP171 BSP295 BSP296 BSP297 BSP298 BSP299 BSP315 BSP316 BSP317

TCA780

Abstract: TFK U 111 B TFK U 4614 B TFK S 186 P TFK U 217 B TFK BP w 41 n TFK BPW 41 N Tfk 880 TFK 148 TDSR 5150 G
Contextual Info: Industry Part Number 1N3245 1N3611GP 1N3612GP 1N3613GP 1N3614GP 1N3725 1N3957GP 1N4001GP 1N4002GP 1N4003GP 1N4004GP 1N4005GP 1N4006GP 1N4007GP 1N4245GP 1N4246GP 1N4247GP 1N4248GP 1N4249GP 1N4678.1N4717 1N4728A.1N4761A 1N4933GP 1N4934GP 1N4935GP 1N4936GP