SRAM CROSS REFERENCES Search Results

SRAM 64KX8 5V

Abstract: 128U K SRAM 512*8 SRAM 3.3v 1Mx8 SRAM edo dRAM AS7C40
Contextual Info: Pagenumber Produci Cross references. Il Ordering information. 13 AS7C164

AS4C2M8

Contextual Info: A Till ! ni T .i h I e ( *I i i m i e il i s L (h i i t 'l l i \ Page number Product guide. 3 Cross

SRAM Cross References

Abstract: UT9Q512K8 SRAM SAMSUNG UT8Q512K8 36E-4 weibull test data 19E4
Contextual Info: Single Event Effects Qualification UT8Q512K8 RQ02 Lot 6ZVL04 4Mbit SRAM 7/21/03 Craig Hafer 719-594-8319 craig.hafer@aeroflex.com SUMMARY-Single event effects qualification testing was performed on the UTMC 4Mbit SRAM, (Samsung Rev C die), Lot 6ZVL04, at the Lawrence Berkeley Laboratory using

NE213

Abstract: BC501 XC4010E scintillator PLCC84 package transistor BC501 A274 A292 PLCC84 XC4010XL
Contextual Info: NEUTRON SINGLE EVENT UPSETS IN SRAM-BASED FPGAs* Mattias Ohlsson Peter Dyreklev Karin Johansson Ericsson Saab Avionics AB Electromagnetic Technology Division 581 88 Linköping, Sweden and Peter Alfke Xilinx, Inc. 2100 Logic Drive, San Jose CA 95124, USA Abstract

736e-02

Abstract: cross reference 4533 UT7Q512
Contextual Info: UTMC Application Note A Radiation Tolerant 4M SRAM for Space Applications Abstract Total ionizing dose and heavy ion single event effects data are presented for a radiation tolerant 100ns 4M SRAM UT7Q512 . The SRAM is shown to be resistant to between 20 and 35krad(Si) of total dose radiation (depending on the particular lot examined) at a relatively high dose rate of 46rad(Si)/s. The SRAM is

fpga radiation

Abstract: SRAM Cross References Upset XQR4036XL RAM SEU UPS control circuitry RAM EDAC SEU Upsets Single Event Upset FPGA
Contextual Info: Single Event Effects Testing of Xilinx FPGAs Dr. Gary Lum Lockheed Martin, Sunnyvale, CA and Glen Vandenboom Xilinx, Inc. San Jose, CA Introduction Advanced Field Programmable Gate Arrays FPGAs operating at 3.3V were tested for single event effects (SEE) by

ICCAVR

Abstract: ATmega 8515 C language STK 300 avr project ATmega 8515 examples atmel avr
Contextual Info: ICCAVR tm ImageCraft AVR C Compiler and development environment Version 6 iMAGEcraft tm tm ICCAVR – C CROSS COMPILER FOR THE ATMEL AVR INTRODUCTION _ 4 IMPORTANT: Registering the Software _5

PE-67583

Abstract: Ericsson FTTX ericsson isdn modem pcm circuit EPD segment driver tms 3631 an
Contextual Info: October 1998 PBM 990 08/1MQ ATM Multi Service Chip Description Key Features The ATM Multi Service Chip is a cost efficient solution for multi service access applications. It is especially suited for ADSL, VDSL, FTTx and HFC applications, where all services are transported over ATM.

45420

Abstract: SN10 TM1019 SRAM Cross References RAM SEU
Contextual Info: SCMOS2 SCMOS2 Technology MG1RT Sea of Gates Family – Tolerance to Radiation 1. Abstract This paper proposes a review of the data gathered during radiation testing for the MG1RT sea of gates family manufactured using the Radiation Tolerant version of the

Contextual Info: Standard Products UT8Q512K32E 16 Megabit RadTolerant SRAM MCM Data Sheet June 28, 2011 INTRODUCTION The UT8Q512K32E RadTolerant product is a high-performance 2M byte 16Mbit CMOS static RAM multi-chip module (MCM), organized as four individual 524,288 x 8 bit SRAMs

EHR96135

Abstract: 100KRAD TM1019 EHR96
Contextual Info: Evaluation Report SCMOS2 Radiation Tolerant Technology MG1RT Sea of Gates Family - Tolerance to Radiation by Thierry CORBIERE 1 Work partially funded by French Space Agency [1] Abstract This paper proposes a review of the data gathered during radiation testing for the MG1RT sea of gates

PE-67583

Abstract: Ericsson Core Network Packet MSC ERICSSON
Contextual Info: ERICSSON ^ October 1998 PBM 990 08/1MQ ATM Multi Service Chip Description Key Features The ATM Multi Service Chip is a cost efficient solution for multi service access applications. It is especially suited for ADSL, VDSL, FTTx and HFC applications, where all services are transported over ATM.

Memories

Abstract: UT8CR512K32
Contextual Info: Standard Products UT8CR512K32 16 Megabit SRAM Data Sheet March 2009 www.aeroflex.com/Memories INTRODUCTION FEATURES ‰ 17ns maximum access time ‰ Asynchronous operation for compatibility with industrystandard 512K x 8 SRAMs ‰ CMOS compatible inputs and output levels, three-state

A82C250

Abstract: laptop adapter circuit by delta electronics adp 8051 infineon 80C51 Development Board 80c154 intel intel 83c154 INSTRUCTION SET DM164 89C51RD2 parallel programming 8051 projects equivalent des circuit integre ttl
Contextual Info: Micro-Catalog-EU-xx 06.04.2000 15:00 Uhr Seite 1 micro catalog E E U R O P E A D I T I O N N 8-bit • 16-bit · 32-bit SPRING 2000 Technical Support and Order Hotline in English language Technischer Support und Bestell-Hotline in deutscher Sprache Service technique et commande par téléphone en langue française

vhdl code for 32 bit pn sequence generator

Abstract: vhdl code 8 bit LFSR vhdl code 16 bit LFSR vhdl code for pseudo random sequence generator vhdl code for 7 bit pseudo random sequence generator vhdl code for pn sequence generator qpsk modulation VHDL CODE 4 bit pn sequence generator vhdl code for pn sequence generator using lfsr vhdl code 12 bit LFSR
Contextual Info: Application Note: Virtex Series, Virtex-II Series, and Spartan-II Family R PN Generators Using the SRL Macro Author: Andy Miller and Michael Gulotta XAPP211 v1.2 June 14, 2004 Summary Pseudo-random Noise (PN) generators are at the heart of every spread spectrum system.

pn sequence generator

Abstract: vhdl code 16 bit LFSR verilog code 16 bit LFSR verilog code 8 bit LFSR vhdl code for pseudo random sequence generator vhdl code for 32 bit pn sequence generator vhdl code 8 bit LFSR verilog code for pseudo random sequence generator in qpsk modulation VHDL CODE vhdl code for 9 bit parity generator
Contextual Info: Application Note: Virtex Series, Virtex-II Series, and Spartan-II Family R PN Generators Using the SRL Macro Author: Andy Miller and Michael Gulotta XAPP211 v1.1 January 9, 2001 Summary Pseudo-random Noise (PN) generators are at the heart of every spread spectrum system.

stopwatch using 8051 microcontroller

Abstract: 3Gxxx S1249 32k sram card 20pin battery BA 92 SAMSUNG semiconductor replacement M46Z128Y-XXXPM1 245AB-XXX-IND 50K ohm Trimmer Trim Pot Variable Resistor DS0621-SDK si288
Contextual Info: SHORT tMWì DALLAS SEMICONDUCTOR APRIL 1996 http://www.dalsemi.com For the latest information about every product we make, visit our World Wide Web site. You’ll find the most complete, up-to-date information about our products available seven days a week, 24 hours a day. H ere’s just some o f what you’ll find:

AN10254

Abstract: LDR SPECIFICATION lpc210x philips assembly location F030 LPC2106 arm vector table Philips LPC2106 reference manual 0xe0008000 AN10254_1
Contextual Info: INTEGRATED CIRCUITS ABSTRACT Simple interrupt handling using Timer 1 peripheral on the LPC2106 is shown in this application note. Code samples are provided using which the user could run the application from Flash or SRAM classifying the Timer 1 peripheral as FIQ or IRQ.

Contextual Info: Standard Products UT9Q512K32E 16 Megabit RadTolerant SRAM MCM Data Sheet June 28, 2011 INTRODUCTION The UT9Q512K32E RadTol product is a high-performance 2M byte 16Mbit CMOS static RAM multi-chip module (MCM), organized as four individual 524,288 x 8 bit SRAMs with a

Contextual Info: Standard Products UT9Q512E 512K x 8 RadTol SRAM Data Sheet September, 2008 INTRODUCTION The UT9Q512E RadTol product is a high-performance CMOS static RAM organized as 524,288 words by 8 bits. Easy memory expansion is provided by an active LOW Chip Enable E , an

Memories

Contextual Info: Standard Products UT8R512K8 512K x 8 SRAM Data Sheet March 2009 www.aeroflex.com/memories FEATURES ‰ 15ns maximum access time ‰ Asynchronous operation for compatibility with industrystandard 512K x 8 SRAMs ‰ CMOS compatible inputs and output levels, three-state

Contextual Info: Standard Products UT8Q512E 512K x 8 RadTol SRAM Data Sheet November 11, 2008 INTRODUCTION The UT8Q512E RadTol product is a high-performance CMOS static RAM organized as 524,288 words by 8 bits. Easy memory expansion is provided by an active LOW Chip Enable E , an

spc560b

Abstract: SPC560B40L3 TN0108 SPC560B40 SPC560B50L3 e200z0
Contextual Info: TN0108 Technical note Migration differences between SPC560B4x/50 and SPC560C4x/50 512KB Cut 1 to Cut 2 Introduction STMicroelectronics have created an e200Z0 core-based Power Architecture family of devices targeted at automotive body applications. This document details the changes that have been implemented going between Cut 1.1 and

MPC5604C

Abstract: mpc5604b SPC560B4 SPC560C4 linflex spc560b Nexus S JTAG freescale
Contextual Info: Freescale Semiconductor Application Note Document Number: AN3864 Rev. 0, 05/2009 Migration Differences Between MPC5604B/C / SPC560B/C4 512 K Cut 1 to Cut 2 by: Alasdair Robertson Microcontroller Solutions Group, East Kilbride 1 Introduction Freescale and ST Microelectronics have created an