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    SPW20N60 Price and Stock

    Infineon Technologies AG SPW20N60C3FKSA1

    MOSFET N-CH 650V 20.7A TO247-3
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    Infineon Technologies AG SPW20N60S5FKSA1

    MOSFET N-CH 600V 20A TO247-3
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    Arrow Electronics SPW20N60S5FKSA1 553 15 Weeks 1
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    Infineon Technologies AG SPW20N60CFDFKSA1

    MOSFET N-CH 650V 20.7A TO247-3
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    Verical SPW20N60CFDFKSA1 260 113
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    Rochester Electronics SPW20N60CFDFKSA1 360 1
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    Rochester Electronics LLC SPW20N60CFDFKSA1

    COOL MOS POWER TRANSISTOR
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    DigiKey SPW20N60CFDFKSA1 Bulk 102
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    Infineon Technologies AG SPW20N60C3E8177FKSA1

    MOSFET N-CH
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    Rochester Electronics SPW20N60C3E8177FKSA1 239,809 1
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    Find more SPW20N60 price and stock on Findchips.com

    SPW20N60 Datasheets (15)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    SPW20N60C2 Infineon Technologies Cool MOS Power Transistor Original PDF
    SPW20N60C2 Infineon Technologies CoolMOS Power MOSFET, 600V, TO-247, RDSon=0.19Ohm, 20.0A Original PDF
    SPW20N60C3 Infineon Technologies CoolMOS Power MOSFET, 600V, TO-247, RDSon=0.19, 20.0A Original PDF
    SPW20N60C3 Infineon Technologies Cool MOS Power Transistor Original PDF
    SPW20N60C3FKSA1 Infineon Technologies Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET N-CH 650V 20.7A TO-247 Original PDF
    SPW20N60CFD Infineon Technologies N-Channel MOSFETs (>500V - 900V); Package: PG-TO247-3; VDS (max): 600.0 V; Package: TO-247; RDS(ON) @ TJ=25°C VGS=10: 220.0 mOhm; ID(max) @ TC=25°C: 20.7 A; IDpuls (max): 52.0 A; Original PDF
    SPW20N60CFD Infineon Technologies Cool MOS Power Transistor Original PDF
    SPW20N60CFDFKSA1 Infineon Technologies Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET N-CH 650V 20.7A TO-247 Original PDF
    SPW20N60S5 Infineon Technologies N-Channel MOSFETs (>500V - 900V); Package: PG-TO247-3; VDS (max): 600.0 V; Package: TO-247; RDS(ON) @ TJ=25°C VGS=10: 190.0 mOhm; ID(max) @ TC=25°C: 20.0 A; IDpuls (max): 40.0 A; Original PDF
    SPW20N60S5 Infineon Technologies Cool MOS Power Transistor Original PDF
    SPW20N60S5 Infineon Technologies CoolMOS Power MOSFET, 600V, TO-247, RDSon=0.19Ohm, 20.0A Original PDF
    SPW20N60S5 Infineon Technologies Cool MOS Power Transistor Original PDF
    SPW20N60S5 Siemens Cool MOS Power Transistor Original PDF
    SPW20N60S5 Toshiba Power MOSFETs Cross Reference Guide Original PDF
    SPW20N60S5FKSA1 Infineon Technologies Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET N-CH 600V 20A TO-247 Original PDF

    SPW20N60 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    20n60s5* values

    Abstract: 20n60s5 SPW20N60S5 equivalent 20N60S5 TO247 SPW20N60S5
    Text: SPW20N60S5 Cool MOS Power Transistor Feature • New revolutionary high voltage technology • Ultra low gate charge VDS 600 V RDS on 0.19 Ω ID 20 A PG-TO247 • Periodic avalanche rated • Extreme dv/dt rated • Ultra low effective capacitances • Improved transconductance


    Original     		PDF SPW20N60S5 PG-TO247 Q67040-S4238 20N60S5 20n60s5* values 20n60s5 SPW20N60S5 equivalent 20N60S5 TO247 SPW20N60S5

    transistor 20N60s5

    Abstract: SPW20N60S5
    Text: SPW20N60S5 Cool MOS Power Transistor Feature • New revolutionary high voltage technology • Ultra low gate charge VDS 600 V RDS on 0.19 Ω ID 20 A PG-TO247 • Periodic avalanche rated • Extreme dv/dt rated • Ultra low effective capacitances • Improved transconductance


    Original     		PDF SPW20N60S5 PG-TO247 SPW20N60S5 Q67040-S4238 20N60S5 transistor 20N60s5

    20n60cfd

    Abstract: No abstract text available
    Text: SPW20N60CFD Cool MOS Power Transistor VDS @ Tjmax 650 V RDS on 0.22 Ω ID 20.7 A Feature • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated PG-TO247 • Extreme dv/dt rated • High peak current capability


    Original     		PDF SPW20N60CFD PG-TO247 SPW20N60CFD Q67040-S4617 20N60CFD 20n60cfd

    20n60s

    Abstract: 20n60s5 SPW20N60S5
    Text: SPW20N60S5 Final data Cool MOS Power Transistor Feature • New revolutionary high voltage technology • Ultra low gate charge VDS 600 V RDS on 0.19 Ω ID 20 A • Periodic avalanche rated P-TO247 • Extreme dv/dt rated • Ultra low effective capacitances


    Original     		PDF SPW20N60S5 P-TO247 Q67040-S4238 20N60S5 20n60s 20n60s5 SPW20N60S5

    SPW20N60S5 equivalent

    Abstract: 20N60S5 TO247 20n60s5 transistor 20N60s5 SPW20N60S5 20n60
    Text: SPW20N60S5 Preliminary data Cool MOS =Power Transistor COOLMOS Power Semiconductors •=New revolutionary high voltage technology • Ultra low gate charge Product Summary •=Periodic avalanche rated VDS @ Tjmax 650 V • Extreme dv/dt rated RDS on 0.19


    Original     		PDF SPW20N60S5 P-TO247 SPWx1N60S5 Q67040-S4238 20N60S5 SPW20N60S5 equivalent 20N60S5 TO247 20n60s5 transistor 20N60s5 SPW20N60S5 20n60

    20n60c3

    Abstract: 20N60C3 equivalent SPW20N60C3 sp*20n60c3 SDP06S60 transistor 20N60c3 506V
    Text: SPW20N60C3 Preliminary data Cool MOS =Power Transistor COOLMOS Power Semiconductors Feature •=New revolutionary high voltage technology Product Summary • Worldwide best R DS on in TO 220 • Ultra low gate charge VDS @ Tjmax 650 V RDS(on) 0.19 Ω


    Original     		PDF SPW20N60C3 P-TO247 Q67040-S4406 20N60C3 20n60c3 20N60C3 equivalent SPW20N60C3 sp*20n60c3 SDP06S60 transistor 20N60c3 506V

    20N60CFD

    Abstract: SPW20N60CFD TP001
    Text: SPW20N60CFD Cool MOS Power Transistor VDS @ Tjmax 650 V RDS on 0.22 Ω ID 20.7 A Feature • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated PG-TO247 • Extreme dv/dt rated • High peak current capability


    Original     		PDF SPW20N60CFD PG-TO247 Q67040-S4617 20N60CFD 20N60CFD SPW20N60CFD TP001

    transistor 20N60s5

    Abstract: 20n60s5 SPW20N60S5 equivalent SPW20N60S5 20n60s5 power transistor 20N60S5 TO247 20N60S RESISTANCE VALUE 20N60S5
    Text: SPW20N60S5 Cool MOS Power Transistor Feature • New revolutionary high voltage technology • Ultra low gate charge VDS 600 V RDS on 0.19 Ω ID 20 A P-TO247 • Periodic avalanche rated • Extreme dv/dt rated • Ultra low effective capacitances • Improved transconductance


    Original     		PDF SPW20N60S5 P-TO247 Q67040-S4238 20N60S5 transistor 20N60s5 20n60s5 SPW20N60S5 equivalent SPW20N60S5 20n60s5 power transistor 20N60S5 TO247 20N60S RESISTANCE VALUE 20N60S5

    20n60cfd

    Abstract: Q67040-S4617 SPW20N60CFD DSA003761 20N60CF
    Text: SPW20N60CFD Cool MOS Power Transistor VDS @ Tjmax 650 V RDS on 0.22 Ω ID 20.7 A Feature • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated P-TO247 • Extreme dv/dt rated • High peak current capability


    Original     		PDF SPW20N60CFD P-TO247 Q67040-S4617 20N60CFD 20n60cfd Q67040-S4617 SPW20N60CFD DSA003761 20N60CF

    20n60c2

    Abstract: SPW20N60C2 SDP06S60
    Text: SPW20N60C2 Preliminary data Cool MOS =Power Transistor COOLMOS Power Semiconductors Feature •=New revolutionary high voltage technology Product Summary • Ultra low gate charge VDS 600 V •=Periodic avalanche rated RDS on 0.19 Ω • Extreme dv/dt rated


    Original     		PDF SPW20N60C2 P-TO247 Q67040-S4321 20N60C2 20n60c2 SPW20N60C2 SDP06S60

    20N60C2

    Abstract: SDP06S60 SPW20N60C2 TID10
    Text: SPW20N60C2 Final data Cool MOS Power Transistor Feature • New revolutionary high voltage technology Product Summary • Ultra low gate charge VDS 600 V • Periodic avalanche rated RDS on 0.19 Ω • Extreme dv/dt rated ID 20 A • Ultra low effective capacitances


    Original     		PDF SPW20N60C2 P-TO247 Q67040-S4321 20N60C2 20N60C2 SDP06S60 SPW20N60C2 TID10

    20N60C3

    Abstract: SPD06S60 SPW20N60C3 sp*20n60c3 transistor 20N60c3
    Text: SPW20N60C3 Final data Cool MOS Power Transistor VDS @ Tjmax 650 V RDS on 0.19 Ω ID 20.7 A Feature • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated P-TO247 • Extreme dv/dt rated • High peak current capability


    Original     		PDF SPW20N60C3 P-TO247 Q67040-S4406 20N60C3 20N60C3 SPD06S60 SPW20N60C3 sp*20n60c3 transistor 20N60c3

    20n60s5

    Abstract: SPW20N60S5 equivalent SPW20N60S5 transistor 20N60s5 20N60S5 TO247 20n60s
    Text: SPW20N60S5 Final data Cool MOS Power Transistor • New revolutionary high voltage technology • Ultra low gate charge Product Summary • Periodic avalanche rated VDS @ Tjmax 650 V • Extreme dv/dt rated RDS on 0.19 Ω • Optimized capacitances ID


    Original     		PDF SPW20N60S5 P-TO247 Q67040-S4238 20N60S5 20n60s5 SPW20N60S5 equivalent SPW20N60S5 transistor 20N60s5 20N60S5 TO247 20n60s

    SPW20N60C3

    Abstract: transistor 20N60c3
    Text: SPW20N60C3 Final data Cool MOS Power Transistor Feature VDS @ Tjmax 650 V RDS on 0.19 Ω ID 20.7 A • New revolutionary high voltage technology • Ultra low gate charge P-TO247 • Periodic avalanche rated • Extreme dv/dt rated • High peak current capability


    Original     		PDF SPW20N60C3 P-TO247 Q67040-S4406 20N60C3 SPW20N60C3 transistor 20N60c3

    20N60S5 TO247

    Abstract: 20n60s5 transistor 20N60s5 20n60s5 power transistor SPW20N60S5 equivalent SPW20N60S5 siemens 350 98 SPW20 20n60s
    Text: SPW20N60S5 Preliminary data D,2 Cool MOS Power Transistor • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche proved G,1 • Extreme dv/dt rated 1 S,3 2 3 • Optimized capacitances COOLMOS • Improved noise immunity


    Original     		PDF SPW20N60S5 SPWx1N60S5 SPW20N60S5 P-TO247 20N60S5 Q67040-S4238 20N60S5 TO247 20n60s5 transistor 20N60s5 20n60s5 power transistor SPW20N60S5 equivalent siemens 350 98 SPW20 20n60s

    20n60c3

    Abstract: 20N60C3 equivalent SPD06S60 diode marking G36 SPW20N60C3 SPW20N60
    Text: SPW20N60C3 Final data Cool MOS Power Transistor Feature VDS @ Tjmax 650 V RDS on 0.19 Ω ID 20.7 A • New revolutionary high voltage technology • Ultra low gate charge P-TO247 • Periodic avalanche rated • Extreme dv/dt rated • High peak current capability


    Original     		PDF SPW20N60C3 P-TO247 Q67040-S4406 20N60C3 20n60c3 20N60C3 equivalent SPD06S60 diode marking G36 SPW20N60C3 SPW20N60

    20N60S5 TO247

    Abstract: 20n60s5 20N60S5 to-247 SPW20N60S5 20n60s5* values
    Text: SPW20N60S5 Cool MOS Power Transistor Feature • New revolutionary high voltage technology • Ultra low gate charge VDS 600 V RDS on 0.19 Ω ID 20 A PG-TO247 • Periodic avalanche rated • Extreme dv/dt rated • Ultra low effective capacitances • Improved transconductance


    Original     		PDF SPW20N60S5 PG-TO247 Q67040-S4238 20N60S5 009-134-A O-247 20N60S5 TO247 20n60s5 20N60S5 to-247 SPW20N60S5 20n60s5* values

    20N60S5

    Abstract: 20N60S5 TO247 SPW20N60S5 equivalent 20n60s5 power transistor 20n60 20n60s5 datasheet TO247 package dissipation SPW20N60S5 20n60s
    Text: SPW20N60S5 Cool MOS Power Transistor Feature • New revolutionary high voltage technology • Ultra low gate charge VDS 600 V RDS on 0.19 Ω ID 20 A PG-TO247 • Periodic avalanche rated • Extreme dv/dt rated • Ultra low effective capacitances • Improved transconductance


    Original     		PDF SPW20N60S5 PG-TO247 Q67040-S4238 20N60S5 20N60S5 20N60S5 TO247 SPW20N60S5 equivalent 20n60s5 power transistor 20n60 20n60s5 datasheet TO247 package dissipation SPW20N60S5 20n60s

    SPW20N60S5

    Abstract: No abstract text available
    Text: SPW20N60S5 Final data Cool MOS Power Transistor Feature • New revolutionary high voltage technology • Ultra low gate charge VDS 600 V RDS on 0.19 Ω ID 20 A P-TO247 • Periodic avalanche rated • Extreme dv/dt rated • Ultra low effective capacitances


    Original     		PDF SPW20N60S5 P-TO247 Q67040-S4238 20N60S5 SPW20N60S5

    20n60c3

    Abstract: transistor 20N60c3 diode marking G36
    Text: SPW20N60C3 Final data Cool MOS Power Transistor Feature • New revolutionary high voltage technology Product Summary • Ultra low gate charge VDS @ Tjmax 650 V • Periodic avalanche rated RDS on 0.19 Ω • Extreme dv/dt rated ID 20.7 A • High peak current capability


    Original     		PDF SPW20N60C3 P-TO247 Q67040-S4406 20N60C3 20n60c3 transistor 20N60c3 diode marking G36

    20n60s5

    Abstract: SPW20N60S5 transistor 20N60s5 20N60S5 TO247 20n60s
    Text: SPW20N60S5 Final data Cool MOS Power Transistor Feature • New revolutionary high voltage technology • Ultra low gate charge VDS 600 V RDS on 0.19 Ω ID 20 A P-TO247 • Periodic avalanche rated • Extreme dv/dt rated • Ultra low effective capacitances


    Original     		PDF SPW20N60S5 P-TO247 Q67040-S4238 20N60S5 20n60s5 SPW20N60S5 transistor 20N60s5 20N60S5 TO247 20n60s

    20n60c3

    Abstract: 20N60C3 equivalent SPW20N60C3 SPD06S60 transistor 20N60c3 131a SPW20N60C3 20N60C3
    Text: SPW20N60C3 Preliminary data Cool MOS =Power Transistor Feature •=New revolutionary high voltage technology Product Summary • Ultra low gate charge VDS @ Tjmax 650 V •=Periodic avalanche rated RDS on 0.19 Ω • Extreme dv/dt rated ID 20.7 A •=High peak current capability


    Original     		PDF SPW20N60C3 P-TO247 Q67040-S4406 20N60C3 20n60c3 20N60C3 equivalent SPW20N60C3 SPD06S60 transistor 20N60c3 131a SPW20N60C3 20N60C3

    20N60C2

    Abstract: SPW20N60C2 Q67040-S4321 SDP06S60
    Text: SPW20N60C2 Final data Cool MOS Power Transistor Feature • New revolutionary high voltage technology Product Summary • Ultra low gate charge VDS 600 V • Periodic avalanche rated RDS on 0.19 Ω • Extreme dv/dt rated ID 20 A • Ultra low effective capacitances


    Original     		PDF SPW20N60C2 P-TO247 Q67040-S4321 20N60C2 20N60C2 SPW20N60C2 Q67040-S4321 SDP06S60

    20N60S5

    Abstract: No abstract text available
    Text: SIEMENS SPW20N60S5 Preliminary data Cool MOS Power Transistor • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche proved • Extreme dv/dt rated • Optimized capacitances • Improved noise immunity • Former development designation:


    OCR Scan     		PDF SPW20N60S5 N60S5 SPW20N60S5 P-T0247 20N60S5 Q67040-S4238 20N60S5