Untitled
Abstract: No abstract text available
Text: bbS3R31 DDS7QSS T4b * A P X b'lE » N AMER PHILIPS/DISCRETE Philips Semiconductors Preliminary specification 1PS184 High speed double diode FEATURES QUICK REFERENCE DATA • Plastic SMD envelope SYMBOL • High speed Per diode • General application. CONDITIONS
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bbS3R31
1PS184
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1PS184
Abstract: smd marking code KN SC59 high speed double diode
Text: N AME R PHILIPS/DISCRETE bTE bbS3T31 D QGS7QSS Philips Semiconductors T4b * A P X Preliminary specification High speed double diode FEATURES QUICK REFERENCE DATA • Plastic SMD envelope SYMBOL • High speed Per diode • General application. PARAMETER CONDITIONS
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bbS3T31
1PS184
1PS184
smd marking code KN
SC59
high speed double diode
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Untitled
Abstract: No abstract text available
Text: DIODE MODULE Spec.No.SR2-SP-10001 R1 MDM800H45E2-H Target Specification FEATURES ∗ Low Reverse Recovery Loss diode module. ∗ Low noise recovery: Ultra soft fast recovery diode. ∗ High reverse recovery capability: Super HiRC Structure. ∗ High reliability, high durability diodes.
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SR2-SP-10001
MDM800H45E2-H
MDM800H45r
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Untitled
Abstract: No abstract text available
Text: DIODE MODULE Spec.No.SR2-SP-09003 R3 MDM750H65E2 Preliminary Specification FEATURES ∗ Low noise recovery: Ultra soft fast recovery diode. ∗ High reverse recovery capability: Super HiRC Structure. ∗ High reliability, high durability diodes. ∗ Isolated heat sink terminal to base .
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SR2-SP-09003
MDM750H65E2
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3AG1A
Abstract: No abstract text available
Text: DIODE MODULE Spec.No.SR2-SP-09007 R2 MDM500H65E2 Preliminary Specification FEATURES ∗ Low noise recovery: Ultra soft fast recovery diode. ∗ High reverse recovery capability: Super HiRC Structure. ∗ High reliability, high durability diodes. ∗ Isolated heat sink terminal to base .
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SR2-SP-09007
MDM500H65E2
3AG1A
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BA221
Abstract: IR 10D DIODE
Text: Philips Semiconductors Product specification High-speed diode BA221 FEATURES DESCRIPTION • Hermetically sealed leaded glass SOD27 DO-35 package The BA221 is a high-speed switching diode fabricated in planar technology, and encapsulated in the hermetically sealed leaded glass SOD27 (DO-35)
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BA221
DO-35)
BA221
711Dfi2b
ilDfl437
IR 10D DIODE
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1N843
Abstract: 1N682 1N683 1N863 CI 4011 SJ 2036 1N643 1N662 1N663 IN862
Text: 26 August 1971 SUPERSEblNG M IL-S-18500/258B MILITARY SPECIFICATION SEMICONDUCTOR DEVICE, DIODE, SILICON, SWITCHING, TYPES 1N643, 1N662 AND 1N663 This specification la m andatory for use by a ll D epart m ents and Agencies of the D epartm ent d befense?"
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MIL-S-19500/256C
MIL-S-10500/258B
1N643,
1N662
1N663
1N643
1N082
1N863
1N843
1N682
1N683
CI 4011
SJ 2036
1N663
IN862
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Untitled
Abstract: No abstract text available
Text: 1. SCOPE This specification provide the ratings and the requirements for high voltage silicon diode ESJA53-18A made by FUJI ELECTRIC CO.,LTD. 2. OUT VIEW Shape and dimensions are described in Fig.3. 3. IDENTIFICATION The diode sha11 be marked with Cathode Mark and Lot No.
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ESJA53-18A
sha11
ESJA53-f
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y 0104
Abstract: LNJC36X8ARA1 Ice blue small chromaticity difference IF5 560 2.5 DIODE 0206
Text: T E N T A T IV E Prepared HS3=ttii/Tentative Specification Checked Approved p ' t jP > ^ T.Onizuka .j CT.Maeda T.lkeda p n flii/T y p e Number:LNJC36X8ARA1 pq S/Matsushita Unified Parts Number : LNJC36X8ARA1 T47s~3 \/— K / Ice Blue Light Emitting Diode ESS
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LNJC36X8ARA1
LNJC36X8ARA1
KB-H-040-01B
14/Polarity
y 0104
Ice blue
small chromaticity difference
IF5 560 2.5
DIODE 0206
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05641
Abstract: optical head laser cd disk laser diode 780 nm cd NDL3009 J22686
Text: ~~ ~5T _ 6 4 2 752 5 N E C ELECTRONICS 59C INC 05641 D T -41-05 D eT | t,427SE5 D D 0 S b 4 1 b TENTATIVE SPECIFICATION NEC LASER DIODE ELECTRON DEVICE N DL3009 DAD, VD APPLICATION AIGaAs DOUBLE HETERO STRU CTU RE LA SER DIODE SEP. 7,1984 DESCRIPTIO N NDL300g laser diode is developed for D A D Digital Audio D isk , Video Disk optical head and non impact laser printer.
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ta457SES
DDOSb41
T-41-05
NDL3009
NDL300g
42752S
J22686
05641
optical head laser cd disk
laser diode 780 nm cd
NDL3009
J22686
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BY328
Abstract: BY-328 by32B
Text: Philips Semiconductors Product specification Damper diode BY328 FEATURES DESCRIPTION • Glass passivated Rugged glass package, using a high temperature alloyed construction. • High maximum operating temperature This package is hermetically sealed and fatigue free as coefficients of
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BY328
7110A2k
BY328
BY-328
by32B
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t4 sot23 diode
Abstract: marking code T4 SOT-23 T4 marking code sot 23 MMBD6100 marking T4 sot23 MMBD6100 diode
Text: BL Galaxy Electrical Production specification Surface mount switching diode MMBD6100 FEATURES Pb z High conductance. z Fast switching. z Surface mount package ideally suited for Lead-free automatic insertion. APPLICATIONS z For general purpose and switching application.
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MMBD6100
OT-23
BL/SSSDC134
t4 sot23 diode
marking code T4 SOT-23
T4 marking code sot 23
MMBD6100
marking T4 sot23
MMBD6100 diode
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Untitled
Abstract: No abstract text available
Text: BL Galaxy Electrical Production specification Silicon Epitaxial Planar Diode 1N4148W FEATURES Pb z Fast Switching Speed:trr=4ns Typ z Surface Mount Package Ideally Suited For Lead-free Automatic Insertion z For General Purpose Switching Applications z High Conductance
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1N4148W
OD-123
BL/SSSDA001
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Untitled
Abstract: No abstract text available
Text: BL Galaxy Electrical Production specification Silicon Epitaxial Planar Diode 1N4148WS FEATURES Pb z Fast Switching Speed:trr=4ns Typ z Surface Mount Package Ideally Suited For Lead-free Automatic Insertion z For General Purpose Switching Applications z High Conductance
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1N4148WS
OD-323
BL/SSSDB002
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T4 SOD-123
Abstract: DIODE T4 marking bl galaxy MARKING CODE diode sod123 t4 SOD-123 marking code T4 diode marking T4 sod123 DIODE T4 marking sod123 1N4148W 1N4148W-T4 1N4148W T4 diode sod-123 marking code t4
Text: BL Galaxy Electrical Production specification Silicon Epitaxial Planar Diode 1N4148W FEATURES Pb z Fast Switching Speed:trr=4ns Typ z Surface Mount Package Ideally Suited For Lead-free Automatic Insertion z For General Purpose Switching Applications z High Conductance
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1N4148W
OD-123
BL/SSSDA001
T4 SOD-123
DIODE T4 marking bl galaxy
MARKING CODE diode sod123 t4
SOD-123 marking code T4
diode marking T4 sod123
DIODE T4 marking sod123
1N4148W
1N4148W-T4
1N4148W T4
diode sod-123 marking code t4
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10j smd diode
Abstract: DIODE SMD to4 SCHOTTKY BARRIER DIODE Silicon Schottky Diode sod123 BAT93 MW200N diode smd 2x
Text: Philips Semiconductors Product specification Schottky barrier diode FEATURES BAT93 QUICK REFERENCE DATA • Ultra-fast switching speed SYMBOL • Low forward voltage Vr CONDITIONS MAX. V 200 mA DESCRIPTION VF IP = 10 mA 400 mV Silicon epitaxial Schottky barrier
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BAT93
OD123
MSA894
71100015aL
OD123.
7110fl2b
10j smd diode
DIODE SMD to4
SCHOTTKY BARRIER DIODE
Silicon Schottky Diode sod123
BAT93
MW200N
diode smd 2x
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Untitled
Abstract: No abstract text available
Text: IGBT MODULE MBN1200H45E2 Silicon N-channel IGBT 4500V E2 version Target Specification Unit in mm OUTLINE DRAWING FEATURES ∗ Low conduction loss IGBT module. ∗ Low noise due to ultra soft fast recovery diode. ∗ High reliability, high durability module.
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MBN1200H45E2
000cycles)
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Untitled
Abstract: No abstract text available
Text: Dual IGBT Module Spec.No.IGBT-SP-10006-R4 MBM600F17D PRELIMINARY SPECIFICATION Silicon N-channel IGBT FEATURES * High speed, low loss IGBT module. * Low driving power due to low input capacitance MOS gate. * Low noise due to ultra soft fast recovery diode.
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IGBT-SP-10006-R4
MBM600F17D
000cycles)
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corrosion inhibitor
Abstract: Hitachi DSA00281
Text: Dual IGBT Module Spec.No.IGBT-SP-10006-R2 MBM600F17D PRELIMINARY SPECIFICATION Silicon N-channel IGBT FEATURES * High speed, low loss IGBT module. * Low driving power due to low input capacitance MOS gate. * Low noise due to ultra soft fast recovery diode.
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IGBT-SP-10006-R2
MBM600F17D
000cycles)
50Hwhole
corrosion inhibitor
Hitachi DSA00281
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marking u12 diode
Abstract: smd diode U12 marking code u12 SMD MARKING CODE SMD s1 sot23 DIODE SMD 10A BBY31 smd code marking sot23
Text: Product specification Philips Semiconductors UHF variable capacitance diode BBY31 FEATURES • Excellent linearity • Small plastic S M D package • C28: 1.9 pF; ratio: 8.3. 1 2 APPLICATIONS -H • Electronic tuning in UHF television tuners 3 • VCO . 3
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BBY31
BBY31
marking u12 diode
smd diode U12
marking code u12 SMD
MARKING CODE SMD s1 sot23
DIODE SMD 10A
smd code marking sot23
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Untitled
Abstract: No abstract text available
Text: IGBT MODULE Spec.No.IGBT-SP-10004 R1 MBN800H45E2-H P1 Target Specification Silicon N-channel IGBT 4500V E2 version FEATURES ∗ Low switching loss IGBT module. ∗ Low noise due to ultra soft fast recovery diode. ∗ High reliability, high durability module.
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IGBT-SP-10004
MBN800H45E2-H
000cycles)
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FUH -29A001B
Abstract: buk638 BUK638-800A BUK638-800B WO 02S
Text: Philips Components D atasheet status Prehmriary specification * * • of Im o * March 1991 GENERAL DESCRIPTION N-channel enhancement mode fieW-effect power transistor in a plastic envelope. FREDFET with fast recovery reverse diode, particularly suitable tor motor control applications, eg. in
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BUK638-800A/B
BUK638
-800A
1E-09
BUK638-80Ã
FUH -29A001B
BUK638-800A
BUK638-800B
WO 02S
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Untitled
Abstract: No abstract text available
Text: IGBT MODULE Spec.No.IGBT-SP-08020 R4 MBM500E33E2 Preliminary Specification FEATURES ∗ Soft switching behavior & low conduction loss: Soft low-injection punch-through High conductivity IGBT. ∗ Low driving power due to low input capacitance MOS gate. ∗ Low noise recovery: Ultra soft fast recovery diode.
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IGBT-SP-08020
MBM500E33E2
000cycles)
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MBN1200H45E2
Abstract: Hitachi DSA00281
Text: IGBT MODULE Spec.No.IGBT-SP-08007 R4 MBN1200H45E2 Silicon N-channel IGBT 4500V E2 version Target Specification Unit in mm OUTLINE DRAWING FEATURES ∗ Low conduction loss IGBT module. ∗ Low noise due to ultra soft fast recovery diode. ∗ High reliability, high durability module.
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IGBT-SP-08007
MBN1200H45E2
000cycles)
MBN1200H45E2
Hitachi DSA00281
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