SP 1982 TRANSISTOR Search Results

sy 320 diode

Abstract: sg 4001 diode GER-A sy 360 KT802A KY transistor diode sy 104 KT 315 a KT 802 mitteilung aus dem veb rft
Contextual Info: S E R V I C E - M I T T E I LU HClüN VEB INDUSTRIEVERTRIEB RUNDFUNK UND FERNSEHEN { p is i! ! r a d i o -televisioni | JANUAR 1982 4 1 SEITE 1-4 Mitteilung aus dem VEB Fernsehgerätewerke "Friedr. Engels" Staßfurt Farbreinheitsstörungen bei In-line-Bildröhren

MAB8048HP

Abstract: 16x8 dual ram intel 8048h PC SOT-145 MAB8035HL MAB8048H P20-P23 sp 1982 transistor sot145
Contextual Info: M A B 8048H y S IN G L E -C H IP 8 -B IT v M IC R O C O M P U T E R DESCRIPTION The MAB8048H fam ily o f single-chip 8-bit microcomputers are fabricated in H-MOS. Two interchangeable pin compatible versions are available: • The MAB8048H w ith resident mask-programmed ROM,

transistor motorola 351

Abstract: 43b transistor Transistor 43B ANSI S 2.19
Contextual Info: M O TO R O L A O rder th is docum ent by BUD43B/D SEMICONDUCTOR TECHNICAL DATA BUD43B Product Preview POWER TRANSISTORS 2 AMPERES 700 VOLTS 25 WATTS SWITCHMODE NPN Silicon Planar Pow er Transistor The BUD43B has an application specific state-of-the-art die designed for use in

4N25 4N25A 4N26 4N27 4N28

Contextual Info: QT Optoelectronics SEMICONDUCTOR TECHNICAL DATA TO VDE UL & CSA •ì SET SEMKO DEMKO NEMKO BABT Glob al Optoi solator 6-Pin DIP Optoisolators Transistor Output [CTR = 20% Min] The 4N25/A, 4N26, 4N27 and 4N28 devices consist of a gallium arsenide infrared emitting diode optically coupled to a monolithic silicon phototransistor

MPS911

Abstract: IL4 SOT23 73DG3 TO-236AA MMBR911 MXR911
Contextual Info: ,MOTOROLA SC -CXSTRS/R F} •mm. 71 DE | t.3fci72Sti 0073002 2 T-5/- i 7 o MOTOROLA S E M I C O N D U C T O R TECHNICAL DATA S V S P S 9 1 1 UPM S ilicon High Frequency IV 1 X R 9 1 1 Transistors IV 8 E V 1 B R 9 1 1 . . . designed for low noise, wide dynamic range front-end amplifiers and low-noise

Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA 4N38 4N38A 6-Pin D IP O p to iso la to rs Transistor Output T h e se devices co n sist o f a galliu m arse nid e infrared em itting d iod e optically coupled to a m on olith ic silicon p ho to tran sistor detector. •

KAG TRANSISTOR

Contextual Info: MOTOROLA IRF440 IRF441 TECHNICAL DATA IM-CHANNEL ENHANCEMENT-MODE SILICON GATE TMOS POWER FIELD EFFECT TRANSISTOR Part Number V DSS rDS on •d IRF440 500 V 0.85 n 8.0 A T h e s e T M O S P o w e r FETs are d es ig n e d fo r high v o ltag e, high sp e ed p o w e r s w itch in g a p p licatio n s such as s w itch in g regulators,

4N25 6 pin dip optoisolator

Abstract: 4N25 4N25A VDE0113 VDE0160 VDE0832 VDE0833 4N27 Opto-isolator
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA 4N 25 4N 25A 4N 26 4N 27 4N 28 6-Pin DIP Optoisolators Transistor Output T h e se d e vices co n sist of a galliu m arse n id e infrared em itting d iod e optically co up led to a m on olith ic silic on p h o to tran sisto r detector.

Contextual Info: Data Sheet No. PD-9.709A INTERNATIO N AL RECTIFIER I R AVALANCHE ENERGY RATED AND dv/dt RATED HEXFET TRANSISTOR IRFMQ54 SH N -C H A N N E L 60 Volt, 0.027 Ohm HEXFET Product Summary The HEXFET® technology is the key to International Part Number Rectifier’s advanced line of power M O S FE T transistors.

Contextual Info: International IOR Rectifier pd-o.usqa IRG4BC30F PRELIMINARY INSULATED GATE BIPOLAR TRANSISTOR Fast Speed IGBT F eatures • Fast: Optimized for medium operating frequencies 1-5 kHz in hard switching, >20 kHz in resonant mode . • Generation 4 IGBT design provides tighter

169 MHz RF CHIP

Abstract: motorola rf power transistors mtbf 015 j47 5659065 bipolar transistor s-parameter DIODE 851 MOTOROLA GX-0300-55-22 BD136 MJD47 MRF20060R
Contextual Info: MOTOROLA Order this document by MRF20060R/D SEMICONDUCTOR TECHNICAL DATA The RF Sub-Micron Bipolar Line RF Pow er Bipolar Transistors M R F20060R M RF20060RS The MRF20060R and MRF20060RS are designed for class AB broadband commercial and industrial applications at frequencies from 1800 to 2000 MHz.

2N5039

Contextual Info: MOTOROLA Order this document by 2N5038/D SEMICONDUCTOR TECHNICAL DATA 2N 5038* 2N5039 NPN Silicon Transistors ‘ Motorola Preferred Device . . . fast switching speeds and high current capacity ideally suit these parts for use in sw itching regulators, inverters, w id e -b a n d a m p lifie rs and pow er o s c illa to rs in

BVW56

Abstract: SMPS CIRCUIT DIAGRAM lg TEA1039
Contextual Info: Ph ilips S e m ic o n d u c to rs Lin ear P rod ucts P ro d u ct sp e cific ation Control circuit for switched-mode power supply TEA1039 G E N E R A L D ESC RIPTIO N The T E A 1 0 3 9 is a b ipo lar integrated c irc u it intended fo r the co n tro l o f a switched-m ode power supply.

diode U3j

Abstract: IRf 447 MOSFET 1RF530 1rf5305 a7x transistor IRF532 MOSFET IRF 531 motorola diode u3j aaBO ON U3J
Contextual Info: MOTOROLA SC MOTOROLA XST RS/R F IM E D I b3b?aSM O OÔ ÎbôS 4 IRF530 1RF531 IRF532 IRF533 •I SEM ICONDUCTOR TECHNICAL DATA N-CHANNEL ENHANCEMENT-MODE SILICON GATE TM OS POWER FIELD EFFECT TRANSISTOR These T M O S Pow er FETs are d esign ed for low voltage, high

tp5n40

Abstract: Motorola transistor 388 TO-204AA TIC 160 D M30TR TP5N40E
Contextual Info: b3b725H DDTflSSS HIT bflE D MOTOROLA SC XSTRS/R F MOTOROLA inOTb • SEMICONDUCTOR TECHNICAL DATA MTM5N40 *MTP5N40E Designer's Data Sheet •M otorola Preferred Device Pow er Field E ffect Transistor N-Channel Enhancement-Mode Silicon Gate T M O S P O W E R FETs

d44vh10

Contextual Info: MOTOROLA Order this document by D44VH/D SEMICONDUCTOR TECHNICAL DATA NPN D44VH Com plem entary Silicon Power Transistors These com plem entary silicon pow er transistors are designed for h ig h -sp e e d switching applications, such as switching regulators and high frequency inverters.

5n05e

Abstract: mtp45n MTM45N05E
Contextual Info: MOTOROLA • I SEM ICONDUCTOR TECHNICAL DATA M T M 4 5N 0 5E M T P 45N 05E Designer's Data Sheet T M O S IV P o w er Field E ffe c t Transistors N-Channel Enhancement-Mode Silicon Gate T his advanced " E " series o f TMOS p o w e r MOSFETs is designed to w ith s ta n d high

MJ11017

Abstract: darlington power transistor mj11021 MJ11021 Motorola semiconductor mj11018 1N5825 MJ11018 MJ11022 MSD6100 transistor pnp 3015
Contextual Info: MOTOROLA Order this document by MJ11017/D SEMICONDUCTOR TECHNICAL DATA PNP M J11017 Com plem entary Darlington Silicon Power Transistors M J1 1 021* NPN . . . d e sig ned fo r use as ge ne ral pu rpo se am plifiers, low fre q u e n cy sw itch ing and m otor con tro l applications.

MOC8204

Abstract: MOC8205 VDE0160 VDE0832 VDE0833
Contextual Info: MOTOROLA S E M IC O N D U C TO R TECHNICAL DATA M O C 8204 M O C 8205 M O C 8206 6 -P in D IP O p t o is o la t o r s Transistor Output . . c o n sist of ga lliu m -a rse n id e infrared em itting d io d e s optically co up led to h igh voltage, silicon, p h o to tra n sisto r detectors in a stan d ard 6-pin D IP package. T h e y are d e sig n e d for

BU323A

Contextual Info: MOTOROLA Order this document by BU323A/D SEMICONDUCTOR TECHNICAL DATA BU323A NPN Silicon Power Darlington Transistor The BU323A is a monolithic darlington transistor designed for automotive ignition, switching regulator and motor control applications. •

MPF910

Contextual Info: MOTOROLA SEM IC O N D U C T O R MFE910 MPF910 TECHNICAL DATA N-CHANNEL ENHANCEMENT-MODE TM OS FIELD-EFFECT TRANSISTOR 60 VOLTS T h is T M O S FET is d e sig n e d for high-voltage, h igh -sp e ed sw itch ­ ing applications su c h as line drivers, relay drivers, C M O S logic,

40N20

Contextual Info: MO TO R O L A SC X ST RS /R F MOTOROLA bfiE D b 3 b ? B 5 4 DOTflbOfl ET3 • SEMICONDUCTOR ■ TECHNICAL DATA Designer's Data Sheet MTM40N20 Pow er Field Effect Transistor N-Channel Enhancem ent-Mode Silicon Gate T M O S P O W E R FET 40 A M P E R E S

IRFY9120

Abstract: diode ED 84 IRFY120 660B IRFV460 ISFV460D TO-257AB
Contextual Info: Data Sheet No. PD-9.660B I3R INTERNATIONAL RECTIFIER REPETITIVE AVALANCHE RATED AND dv/dt RATED HEXFET TRANSISTOR IRFV4BO N-CHANNEL 500 Volt, 0.27 Ohm HEXFET Product Summary The HEXFET® technology is the key to International Rectifier’s advanced line of power MOSFET transistors.

Contextual Info: MOTOROLA Order this document by MJ13333/D SEMICONDUCTOR TECHNICAL DATA M J13333 D esigner’s Data Sheet SWITCHMODE Series NPN Silicon Power Transistor 20 AMPERE NPN SILICON POWER TRANSISTORS 400-500 VOLTS 175 WATTS The M J13 33 3 tra n sisto r is d e sig n e d for high volta ge , h ig h -s p e e d , po w e r sw itching