Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    SOT975 Search Results

    SOT975 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    sot979

    Abstract: No abstract text available
    Text: Ceramic packages for RF Power Transistors SOT975B L x W x H (mm SOT538A (5.5 x 4.1 x 2.2 (mm) SOT1227A (7.1 x 6.9 x 3.3 (mm) SOT975C (7.1 x 6.9 x 3.3 (mm) (14.0 x 4.1 x 2.9 (mm) SOT1227B SOT467B (9.7 x 5.8 x 4.3 (mm) SOT467C (20.3 x 5.8 x 4.3 (mm)


    Original
    PDF OT975B OT538A OT1227A OT975C OT1227B OT467B OT467C OT1228A OT1228B OT608A sot979

    RF35

    Abstract: No abstract text available
    Text: BLF6G27-10; BLF6G27-10G WiMAX power LDMOS transistor Rev. 01 — 4 February 2009 Product data sheet 1. Product profile 1.1 General description 10 W LDMOS power transistor for base station applications at frequencies from 2500 MHz to 2700 MHz. Table 1. Typical performance


    Original
    PDF BLF6G27-10; BLF6G27-10G ACPR885k ACPR1980k BLF6G27-10 BLF6G27-10G RF35

    TRANSISTOR J601

    Abstract: gp816 RF35 J2396 J249
    Text: BLF6G38-10; BLF6G38-10G WiMAX power LDMOS transistor Rev. 01 — 3 February 2009 Product data sheet 1. Product profile 1.1 General description 10 W LDMOS power transistor for base station applications at frequencies from 3400 MHz to 3600 MHz. Table 1. Typical performance


    Original
    PDF BLF6G38-10; BLF6G38-10G ACPR885k ACPR1980k BLF6G38-10 BLF6G38-10G TRANSISTOR J601 gp816 RF35 J2396 J249

    SOT539A

    Abstract: SOT975B SOT540A SOT538A sot538b sot988 SOT608B
    Text: Air-cavity plastic packages SOT987B SOT895A Bias/temperature sensing SOT981A SOT988B SOT896B Bias/temperature sensing SOT986B Push-pull configuration SOT982A MMIC configuration SOT980A SOT1015BG Bias/temperature sensing Increase the flexibility of application-specific design by using LDMOS RF power


    Original
    PDF OT987B OT895A OT981A OT988B OT896B OT986B OT982A OT980A OT1015BG OT538A SOT539A SOT975B SOT540A SOT538A sot538b sot988 SOT608B

    LPC2148 i2c

    Abstract: BGB210S lpc2148 interfacing 2.8" TFT LCD DISPLAY BGB210 embedded c code to interface lpc2148 with sensor BGW200 TDA8932T tda8920bj NXP PN531 TDA8947J equivalent
    Text: Building blocks for vibrant media Highlights of the NXP product portfolio Building blocks for vibrant media  At NXP Semiconductors, the new company founded by Philips, we’re driven by a single purpose — to deliver vibrant media technologies that create better sensory experiences.


    Original
    PDF OT363 SC-88) LPC2148 i2c BGB210S lpc2148 interfacing 2.8" TFT LCD DISPLAY BGB210 embedded c code to interface lpc2148 with sensor BGW200 TDA8932T tda8920bj NXP PN531 TDA8947J equivalent

    Untitled

    Abstract: No abstract text available
    Text: Enabling the Mobile Experience High Performance RF for wireless infrastructure Unleash the performance of your RF and microwave designs www.nxp.com/unleash-rf Enabling the Mobile Experience The future is mobile. And mobility means the freedom to innovate, communicate, connect and win.


    Original
    PDF

    BFG591 amplifier

    Abstract: 5.8GHz Analog RF mmic MRF6Vp3450 nxp Standard Marking BLF6G21-10G FET 2N5459 RF LNB C band chipset radar 77 ghz sige 82 sot363-6 Dect antenna smd code marking ft sot23
    Text: RF手册 第12版 RF产品的应用和设计手册 2009年6月 Experience high-performance analog 体验高性能模拟产品 恩智浦RF手册令设计更简易 恩智浦 RF手册是当今RF设计市场上最重要的参考工具之一,展示了我们恩智浦半导体 (NXP


    Original
    PDF TFF1007HN TFF11070HN TFF11073HN TFF11077HN TFF11080HN TFF11084HN TFF11088HN TFF11092HN TFF11096HN TFF11101HN BFG591 amplifier 5.8GHz Analog RF mmic MRF6Vp3450 nxp Standard Marking BLF6G21-10G FET 2N5459 RF LNB C band chipset radar 77 ghz sige 82 sot363-6 Dect antenna smd code marking ft sot23

    Pallet VHF Power Amplifier

    Abstract: BLF578 BLF578 fm band Pallet VHF Power Amplifier TELEVISION blf574 BLF571 BLA6H1214-500 1200w power amplifier LDMOS DVB-T transistors power combiner 4 watt VHF
    Text: RF Power Presentation Broadcast ISM , Microwave and Cellular Richard Marlow: European Regional Marketing February 2009 Microwave, Broadcast & ISM Markets Broadcast (TV and radio transmission) – – – – – NXP has a long history (as Philips) and excellent reputation in the market


    Original
    PDF BLF87x/88x) BLF57x) IS-95 BLF6G38S-25 OT608B BLF6G38-25 OT608A BLF6G38-10 Pallet VHF Power Amplifier BLF578 BLF578 fm band Pallet VHF Power Amplifier TELEVISION blf574 BLF571 BLA6H1214-500 1200w power amplifier LDMOS DVB-T transistors power combiner 4 watt VHF

    107j capacitor

    Abstract: capacitor 107J
    Text: BLF25M612 Power LDMOS transistor Rev. 1 — 5 June 2012 Objective data sheet 1. Product profile 1.1 General description 12 W LDMOS power transistor for Industrial, Scientific and Medical ISM applications at frequencies from 2400 MHz to 2500 MHz. The BLF25M612 is a driver designed for high power CW applications and is assembled in


    Original
    PDF BLF25M612 BLF25M612 107j capacitor capacitor 107J

    smd transistor 6g

    Abstract: 6G smd transistor s band POWER TRANSISTOR 2.7 3.1 3.5 GHZ nxp 544 200B BLS6G2731-6G TAJD106K035R transistor equivalent table sot975c radar circuit component
    Text: BLS6G2731-6G LDMOS S-Band radar power transistor Rev. 01 — 19 February 2009 Product data sheet 1. Product profile 1.1 General description 6 W LDMOS power transistor intended for radar applications in the 2.7 GHz to 3.1 GHz range. Table 1. Typical performance


    Original
    PDF BLS6G2731-6G BLS6G2731-6G smd transistor 6g 6G smd transistor s band POWER TRANSISTOR 2.7 3.1 3.5 GHZ nxp 544 200B TAJD106K035R transistor equivalent table sot975c radar circuit component

    QUBiC4X

    Abstract: BGX7300 power amplifier NXP BLF7G20LS-90P BGA7202 printed antenna dcs 1800 BLP7G10S-140P BLF578XR qubic4 BGU705 Thin Film Resistors SiCr
    Text: Your partner in mobile communication infrastructure design High Performance RF for wireless infrastructure Looking for a partner who can help you meet the challenges of wireless infrastructure base station design? As a global leader in RF technology and component design, NXP Semiconductors offers


    Original
    PDF 12x12 LQFP48 QUBiC4X BGX7300 power amplifier NXP BLF7G20LS-90P BGA7202 printed antenna dcs 1800 BLP7G10S-140P BLF578XR qubic4 BGU705 Thin Film Resistors SiCr

    UPC8236

    Abstract: MRFE6VP m74 7 segment display Mounting and Soldering of RF transistors MOBILE jammer GSM 1800 MHZ circuit diagram BLF4G08LS-160A rf Amplifier mhz Doherty 470-860 RF transceiver 802.11AC AN10882 m74 7 segment display input
    Text: RF Manual 16 edition th Application and design manual for High Performance RF products June 2012 NXP enables you to unleash the performance of next-generation RF and microwave designs NXP's RF Manual is one of the most important reference tools on the market for today’s


    Original
    PDF

    Untitled

    Abstract: No abstract text available
    Text: High performance aerospace and defense solutions Introduction NXP Semiconductors has been a trusted source and a leading provider of components to the Aerospace and Defense market for over 30 years. NXP’s components are applied in a wide array of Aerospace and Defense systems including Radar, SDR Software Defined Radio , ECM (Electronic Countermeasures) and


    Original
    PDF JESD204A

    very simple walkie talkie circuit diagram

    Abstract: blf278 models walkie talkie circuit diagram simple walkie talkie circuit diagram SiGe HBT GAIN BLOCK MMIC AMPLIFIER N6 BF245c spice model smd TRANSISTOR code marking 8K MOBILE jammer GSM 1800 MHZ BSS83 spice model smd TRANSISTOR code marking 7k sot23
    Text: Experience high-performance analog NXP’s RF Manual makes design work much easier NXP’s RF Manual – one of the most important reference tools on the market for today’s RF designers – features our complete range of RF products, from low to high power.


    Original
    PDF TFF1007HN TFF11070HN TFF11073HN TFF11077HN TFF11080HN TFF11084HN TFF11088HN TFF11092HN TFF11096HN TFF11101HN very simple walkie talkie circuit diagram blf278 models walkie talkie circuit diagram simple walkie talkie circuit diagram SiGe HBT GAIN BLOCK MMIC AMPLIFIER N6 BF245c spice model smd TRANSISTOR code marking 8K MOBILE jammer GSM 1800 MHZ BSS83 spice model smd TRANSISTOR code marking 7k sot23

    SMD transistor package code A64

    Abstract: No abstract text available
    Text: BLF6G27-10; BLF6G27-10G WiMAX power LDMOS transistor Rev. 3 — 28 February 2011 Product data sheet 1. Product profile 1.1 General description 10 W LDMOS power transistor for base station applications at frequencies from 2300 MHz to 2400 MHz and 2500 MHz to 2700 MHz.


    Original
    PDF BLF6G27-10; BLF6G27-10G IS-95 ACPR885k ACPR1980k BLF6G27-10 SMD transistor package code A64

    MPF102 spice model

    Abstract: BLF278 mosfet HF amplifier BLF4G08LS-160A x-band mmic core chip BLF4G08LS-160 BIT 3713 IB3135 toshiba smd marking code transistor bgu7041 TEA6848H
    Text: RF Manual 15th edition Application and design manual for High Performance RF products May 2011 High Performance RF for the most demanding applications NXP’s RF Manual makes design work much easier NXP's RF Manual is one of the most important reference tools on the market for


    Original
    PDF te121 MPF102 spice model BLF278 mosfet HF amplifier BLF4G08LS-160A x-band mmic core chip BLF4G08LS-160 BIT 3713 IB3135 toshiba smd marking code transistor bgu7041 TEA6848H

    double TRANSISTOR SMD MARKING CODE mc

    Abstract: walkie talkie circuit diagram very simple walkie talkie circuit diagram smd TRANSISTOR code marking 8K smd m5 transistor 6-pin walkie talkie Transceiver IC mesfet lnb toshiba smd marking code transistor blf574 BLF578
    Text: Experience high-performance analog NXP’s RF Manual makes design work much easier NXP’s RF Manual – one of the most important reference tools on the market for today’s RF designers – features our complete range of RF products, from low to high power.


    Original
    PDF TFF1007HN TFF11070HN TFF11073HN TFF11077HN TFF11080HN TFF11084HN TFF11088HN TFF11092HN TFF11096HN TFF11101HN double TRANSISTOR SMD MARKING CODE mc walkie talkie circuit diagram very simple walkie talkie circuit diagram smd TRANSISTOR code marking 8K smd m5 transistor 6-pin walkie talkie Transceiver IC mesfet lnb toshiba smd marking code transistor blf574 BLF578

    BA 7891 NG

    Abstract: bts 2140 1b TFF1014 BLF4G08LS-160A bf1107 spice model BF862 spice model RF transceiver 802.11AC Multiple output LNB 802.11AC BGU6104
    Text: 释放潜能 RF 手册第 16 版 高性能 RF 产品应用和设计手册 2012 年 6 月 恩智浦助您释放下一代 RF 和微波设计的潜能 恩智浦 RF 手册是当今 RF 设计市场上最重要的参考工具之一。此手册对我们的全系列 RF 产品进


    Original
    PDF PRF957 TFF1003HN TFF1007HN TFF1014HN TFF1015HN TFF1017HN TFF11070HN TFF11073HN TFF11077HN TFF11080HN BA 7891 NG bts 2140 1b TFF1014 BLF4G08LS-160A bf1107 spice model BF862 spice model RF transceiver 802.11AC Multiple output LNB 802.11AC BGU6104

    BLA1011-300

    Abstract: LDMOS radar BLA0912-250 BLA1011-10 BLA1011-2 BLA1011-200 BLL1214-250 BLL1214-35 BLS6G3135-120
    Text: Microwave product portfolio Product type Package Frequency Band Min - Max Supply Voltage Output Power Pulse Duration Duty Cycle Power Gain typical Drain Efficiency typical (MHz) (V) (W) (us) (%) (dB) (N %) Application(s) Die technology AVIONICS LDMOS BLA1011-300


    Original
    PDF BLA1011-300 OT957A BLA0912-250 OT502A BLA1011-200 BLA1011-10 OT467C BLA1011 OT608B BLA1011-300 LDMOS radar BLA0912-250 BLA1011-10 BLA1011-2 BLA1011-200 BLL1214-250 BLL1214-35 BLS6G3135-120

    blf578

    Abstract: MRF6V2300N ic tea 2025 NXP SMD TRANSISTOR MARKING CODE s1 TEA 2025 equivalent blf278 rf amplifier radar amplifier s-band 2SK163 GaN ADS HSMP3814
    Text: RF マニュアル第 12版 RF製品用のアプリケーションおよび設計マニュアル 2009年6月 ハイパフォーマンス・アナログを体験 NXPの RF マニュアルでRF設計がこ れまでになく簡単に 『NXPの RF マニュアル 』 は、今日RF設計者向けに市場に出回っているレファレンス・ツー


    Original
    PDF TFF1007HN TFF11070HN TFF11073HN TFF11077HN TFF11080HN TFF11084HN TFF11088HN TFF11092HN TFF11096HN TFF11101HN blf578 MRF6V2300N ic tea 2025 NXP SMD TRANSISTOR MARKING CODE s1 TEA 2025 equivalent blf278 rf amplifier radar amplifier s-band 2SK163 GaN ADS HSMP3814

    BLF6G24-12 nxp semiconductors

    Abstract: sot975b
    Text: BLF6G24-12 Power LDMOS transistor Rev. 1 — 24 February 2011 Objective data sheet 1. Product profile 1.1 General description 12 W LDMOS power transistor for various applications such as ISM and industrial heating at frequencies from 2400 MHz to 2500 MHz.


    Original
    PDF BLF6G24-12 BLF6G24-12 nxp semiconductors sot975b

    smd transistor equivalent table

    Abstract: No abstract text available
    Text: BLF25M612G Power LDMOS transistor Rev. 1 — 5 June 2012 Objective data sheet 1. Product profile 1.1 General description 12 W LDMOS power transistor for Industrial, Scientific and Medical ISM applications at frequencies from 2400 MHz to 2500 MHz. The BLF25M612G is a driver designed for high power CW applications and is assembled


    Original
    PDF BLF25M612G BLF25M612G smd transistor equivalent table

    blc6g27ls-100

    Abstract: BLC6G27-100 LDMOS SOT975B 3400 CDMA SOT608B BLF6G27-135 BLF6G27-45 BLF6G27LS-135
    Text: WiMAX product portfolio Product type Package Matching Frequency Band Min - Max (I/O) (MHz) Supply Voltage Output Power typical Test signal Power Gain typical Drain Efficiency typical ACPR885 (dB) (N %) (dBc) N-CDMA 16 @ 2500 22,5 (W) Class Die technology


    Original
    PDF ACPR885 BLF6G27LS-135 OT502B BLF6G27-135 OT502A BLC6G27LS-100 OT896B BLC6G27-100 OT895A OT608A blc6g27ls-100 BLC6G27-100 LDMOS SOT975B 3400 CDMA SOT608B BLF6G27-135 BLF6G27-45 BLF6G27LS-135

    BB 509 varicap diode

    Abstract: BLF6G22L ON503 tea6849 bf1107 spice model PIN diode ADS model ULTRA FAST DIODES SANYO catalog RF MANUAL diode varicap BB 112 adi cmos bipolar SiGe
    Text: UNLEASH RF RF Manual 17 edition th Application and design manual for High Performance RF products June 2013 NXP enables you to unleash the performance of next-generation RF and microwave designs NXP's RF Manual is one of the most important reference tools on the market for today’s


    Original
    PDF