T491D476M020AS
Abstract: TRANSISTOR SMD 2X K transistor j127 BLA0912-250 T491D226M020AS
Text: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D379 BLA0912-250 Avionics LDMOS transistor Preliminary specification 2003 Oct 24 Philips Semiconductors Preliminary specification Avionics LDMOS transistor BLA0912-250 PINNING - SOT502A FEATURES • High power gain
|
Original
|
PDF
|
M3D379
BLA0912-250
OT502A
SCA74
613524/06/pp11
T491D476M020AS
TRANSISTOR SMD 2X K
transistor j127
BLA0912-250
T491D226M020AS
|
Untitled
Abstract: No abstract text available
Text: BLA0912-250R Avionics LDMOS power transistor Rev. 3 — 1 December 2010 Product data sheet 1. Product profile 1.1 General description Silicon N-channel enhancement mode LDMOS transistor encapsulated in a 2-lead SOT502A flange package with a ceramic cap. The common source is connected to the
|
Original
|
PDF
|
BLA0912-250R
OT502A
|
Untitled
Abstract: No abstract text available
Text: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D379 BLF1048 UHF power LDMOS transistor Preliminary specification Supersedes data of 1998 Jul 07 1998 Aug 05 Philips Semiconductors Preliminary specification UHF power LDMOS transistor BLF1048 PINNING - SOT502A
|
Original
|
PDF
|
M3D379
BLF1048
BLF1048
OT502A
SCA60
125108/00/03/pp8
|
Untitled
Abstract: No abstract text available
Text: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D379 BLA1011-200 Avionics LDMOS transistor Preliminary specification 2000 Nov 21 Philips Semiconductors Preliminary specification Avionics LDMOS transistor BLA1011-200 PINNING - SOT502A FEATURES • High power gain
|
Original
|
PDF
|
M3D379
BLA1011-200
OT502A)
BLA1011-200
OT502A
|
multilayer ceramic capacitor philips
Abstract: BLA1011-200
Text: DISCRETE SEMICONDUCTORS DATA SHEET ook, halfpage M3D379 BLA1011-200 Avionics LDMOS transistor Product specification Supersedes data of 2001 Apr 17 2001 May 15 Philips Semiconductors Product specification Avionics LDMOS transistor BLA1011-200 FEATURES PINNING - SOT502A
|
Original
|
PDF
|
M3D379
BLA1011-200
OT502A
613524/05/pp12
multilayer ceramic capacitor philips
BLA1011-200
|
transistor d 965 al
Abstract: TRANSISTOR D 471 BLF1048 BP317
Text: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D379 BLF1048 UHF power LDMOS transistor Preliminary specification Supersedes data of 1999 July 01 2000 Feb 02 Philips Semiconductors Preliminary specification UHF power LDMOS transistor BLF1048 FEATURES PINNING - SOT502A
|
Original
|
PDF
|
M3D379
BLF1048
OT502A
603516/05/pp8
transistor d 965 al
TRANSISTOR D 471
BLF1048
BP317
|
SMD0508
Abstract: BLA1011-200
Text: DISCRETE SEMICONDUCTORS DATA SHEET ook, halfpage M3D379 BLA1011-200 Avionics LDMOS transistor Product specification Supersedes data of 2002 Mar 18 2003 Nov 11 Philips Semiconductors Product specification Avionics LDMOS transistor BLA1011-200 FEATURES PINNING - SOT502A
|
Original
|
PDF
|
M3D379
BLA1011-200
OT502A
SCA75
R77/07/pp10
SMD0508
BLA1011-200
|
BLF1048
Abstract: BP317
Text: DISCRETE SEMICONDUCTORS DATA SHEET dbook, halfpage M3D379 BLF1048 UHF power LDMOS transistor Preliminary specification 1999 Jul 12 Philips Semiconductors Preliminary specification UHF power LDMOS transistor BLF1048 PINNING - SOT502A FEATURES • High power gain
|
Original
|
PDF
|
M3D379
BLF1048
OT502A
125108/00/02/pp6
BLF1048
BP317
|
200B
Abstract: flange table
Text: BLL1214-250R LDMOS L-band radar power transistor Rev. 01 — 4 February 2010 Product data sheet 1. Product profile 1.1 General description Silicon N-channel enhancement model LDMOS power transistor encapsulated in a 2-lead flange package SOT502A with a ceramic cap. The common source is connected to the
|
Original
|
PDF
|
BLL1214-250R
OT502A)
BLL1214-250R
200B
flange table
|
Untitled
Abstract: No abstract text available
Text: BLA0912-250R Avionics LDMOS power transistor Rev. 2 — 15 October 2010 Product data sheet 1. Product profile 1.1 General description Silicon N-channel enhancement mode LDMOS transistor encapsulated in a 2-lead SOT502A flange package with a ceramic cap. The common source is connected to the
|
Original
|
PDF
|
BLA0912-250R
OT502A
|
Untitled
Abstract: No abstract text available
Text: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D379 BLF2047 UHF power LDMOS transistor Preliminary specification 1998 Nov 02 Philips Semiconductors Preliminary specification UHF power LDMOS transistor BLF2047 PINNING - SOT502A FEATURES • High power gain
|
Original
|
PDF
|
M3D379
BLF2047
BLF2047
OT502A
SCA60
|
TRANSISTOR CW 7808
Abstract: cw 7808 7808 voltage regulator transistor 7808
Text: DISCRETE SEMICONDUCTORS DATA SHEET ook, halfpage M3D379 BLF1049 UHF power LDMOS transistor Preliminary specification 2001 Oct 09 Philips Semiconductors Preliminary specification UHF power LDMOS transistor BLF1049 PINNING - SOT502A FEATURES • High power gain
|
Original
|
PDF
|
M3D379
BLF1049
BLF1049
OT502A
SCA73
603516/05/pp9
TRANSISTOR CW 7808
cw 7808
7808 voltage regulator
transistor 7808
|
smd JH transistor
Abstract: 250 B 340 smd Transistor T491D476M020AS BLA0912-250R J2 JH
Text: BLA0912-250R Avionics LDMOS power transistor Rev. 3 — 1 December 2010 Product data sheet 1. Product profile 1.1 General description Silicon N-channel enhancement mode LDMOS transistor encapsulated in a 2-lead SOT502A flange package with a ceramic cap. The common source is connected to the
|
Original
|
PDF
|
BLA0912-250R
OT502A
smd JH transistor
250 B 340 smd Transistor
T491D476M020AS
BLA0912-250R
J2 JH
|
250 B 340 smd Transistor
Abstract: smd JH transistor BLA0912-250 T491D476M020AS
Text: BLA0912-250 Avionics LDMOS transistor Rev. 3 — 26 November 2010 Product data sheet 1. Product profile 1.1 General description Silicon N-channel enhancement mode LDMOS transistor encapsulated in a 2-lead SOT502A flange package with a ceramic cap. The common source is connected to the
|
Original
|
PDF
|
BLA0912-250
OT502A
103itions
250 B 340 smd Transistor
smd JH transistor
BLA0912-250
T491D476M020AS
|
|
|
Untitled
Abstract: No abstract text available
Text: Package outline Flanged ceramic package; 2 mounting holes; 2 leads SOT502A D A F 3 D1 U1 B q c C 1 H L E1 p U2 E w1 M A M B M A 2 w2 M C M b 5 Q 10 mm scale DIMENSIONS millimetre dimensions are derived from the original inch dimensions UNIT A b c mm 4.72
|
Original
|
PDF
|
OT502A
|
Untitled
Abstract: No abstract text available
Text: DISCRETE SEMICONDUCTORS DAT book, halfpage M3D379 BLL1214-250 L-band radar LDMOS transistor Product specification Supersedes data of 2002 Aug 06 2003 Aug 29 Philips Semiconductors Product specification L-band radar LDMOS transistor BLL1214-250 PINNING - SOT502A
|
Original
|
PDF
|
M3D379
BLL1214-250
OT502A
SCA75
613524/03/pp10
|
NV SMD TRANSISTOR
Abstract: philips resistor TRANSISTOR L2 BLA0912-250 T491D226M020AS T491D476M020AS TANTALUM SMD CAPACITOR JTIDS smd transistor w1 gp3511
Text: BLA0912-250 Avionics LDMOS transistor Rev. 02 — 22 July 2004 Product data sheet 1. Product profile 1.1 General description Silicon N-channel enhancement mode lateral D-MOS transistor encapsulated in a 2-lead SOT502A flange package with a ceramic cap. The common source is connected to the
|
Original
|
PDF
|
BLA0912-250
OT502A
NV SMD TRANSISTOR
philips resistor
TRANSISTOR L2
BLA0912-250
T491D226M020AS
T491D476M020AS
TANTALUM SMD CAPACITOR
JTIDS
smd transistor w1
gp3511
|
Untitled
Abstract: No abstract text available
Text: PDF: 2003 Jan 10 Philips Semiconductors Package outline Flanged LDMOST ceramic package; 2 mounting holes; 2 leads SOT502A D A F 3 D1 U1 B q c C 1 H L E1 p U2 E w1 M A M B M A 2 w2 M C M b 5 Q 10 mm scale DIMENSIONS millimetre dimensions are derived from the original inch dimensions
|
Original
|
PDF
|
OT502A
|
Untitled
Abstract: No abstract text available
Text: BLA0912-250 Avionics LDMOS transistor Rev. 3 — 26 November 2010 Product data sheet 1. Product profile 1.1 General description Silicon N-channel enhancement mode LDMOS transistor encapsulated in a 2-lead SOT502A flange package with a ceramic cap. The common source is connected to the
|
Original
|
PDF
|
BLA0912-250
OT502A
|
smd L19
Abstract: MGU538
Text: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D379 BLF2022-90 UHF power LDMOS transistor Product specification Supersedes data of 2001 Mar 22 2002 Sep 09 Philips Semiconductors Product specification UHF power LDMOS transistor BLF2022-90 PINNING - SOT502A
|
Original
|
PDF
|
M3D379
BLF2022-90
BLF2022-90
OT502A
MBK394
SCA74
613524/02/pp12
smd L19
MGU538
|
Untitled
Abstract: No abstract text available
Text: DISCRETE SEMICONDUCTORS DATA SHEET ook, halfpage M3D379 BLA1011-200 Avionics LDMOS transistor Product specification Supersedes data of 2001 Mar 02 2001 Apr 17 Philips Semiconductors Product specification Avionics LDMOS transistor BLA1011-200 FEATURES PINNING - SOT502A
|
Original
|
PDF
|
M3D379
BLA1011-200
OT502A
BLA1011-200
613524/04/pp12
|
sot502a
Abstract: q 1257
Text: PDF: 2000 Jan 10 Philips Semiconductors Package outline Flanged LDMOST ceramic package; 2 mounting holes; 2 leads SOT502A D A F 3 D1 U1 B q c C 1 H L E1 p U2 E w1 M A M B M A 2 w2 M C M b 5 Q 10 mm scale DIMENSIONS millimetre dimensions are derived from the original inch dimensions
|
Original
|
PDF
|
OT502A
sot502a
q 1257
|
BLA1011-200
Abstract: BP317
Text: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D379 BLA1011-200 Avionics LDMOS transistor Preliminary specification 2000 Aug 02 Philips Semiconductors Preliminary specification Avionics LDMOS transistor BLA1011-200 PINNING - SOT502A FEATURES • High power gain
|
Original
|
PDF
|
M3D379
BLA1011-200
OT502A
f4825
BLA1011-200
BP317
|
BLA1011-200
Abstract: BP317
Text: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D379 BLA1011-200 Avionics LDMOS transistor Preliminary specification 2001 Feb 27 Philips Semiconductors Preliminary specification Avionics LDMOS transistor BLA1011-200 PINNING - SOT502A FEATURES • High power gain
|
Original
|
PDF
|
M3D379
BLA1011-200
OT502A
f4825
BLA1011-200
BP317
|
