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    SOT23-6 MARKING 310 Search Results

    SOT23-6 MARKING 310 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TBAW56 Toshiba Electronic Devices & Storage Corporation Switching Diode, 80 V, 0.215 A, SOT23 Visit Toshiba Electronic Devices & Storage Corporation
    ISL28114SOT23EVAL1Z Renesas Electronics Corporation Single General Purpose Micropower, RRIO Op Amp Evaluation Board Visit Renesas Electronics Corporation
    ISL28113SOT23EVAL1Z Renesas Electronics Corporation Single General Purpose Micropower, RRIO Op Amp Evaluation Board Visit Renesas Electronics Corporation
    ISL54103IHZ-T7A Renesas Electronics Corporation DDC Accelerator (DDCA), SOT23, /Reel Visit Renesas Electronics Corporation
    EL6204CWZ-T7A Renesas Electronics Corporation Laser Driver Oscillator, SOT23, /Reel Visit Renesas Electronics Corporation

    SOT23-6 MARKING 310 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    Untitled

    Abstract: No abstract text available
    Text: 2N7002K N-CHANNEL ENHANCEMENT MODE MOSFET NEW PRODUCT Product Summary Features and Benefits V BR DSS RDS(ON) max 60V 2Ω @ VGS = 10V 3Ω @ VGS = 5V ID max TA = +25°C 380mA 310mA Description • Low On-Resistance  Low Input Capacitance  Fast Switching Speed


    Original     		2N7002K 380mA 310mA AEC-Q101 DS30896 PDF

    Untitled

    Abstract: No abstract text available
    Text: 2N7002K N-CHANNEL ENHANCEMENT MODE MOSFET Features and Benefits V BR DSS RDS(ON) max 60V 2Ω @ VGS = 10V 3Ω @ VGS = 5V ID max TA = +25°C 380mA 310mA • Low On-Resistance  Low Input Capacitance  Fast Switching Speed  Low Input/Output Leakage 


    Original     		2N7002K 380mA 310mA AEC-Q101 DS30896 PDF

    Untitled

    Abstract: No abstract text available
    Text: 2N7002K N-CHANNEL ENHANCEMENT MODE MOSFET Features and Benefits V BR DSS RDS(ON) max 60V 2Ω @ VGS = 10V 3Ω @ VGS = 5V ID max TA = +25°C 380mA 310mA Description • Low On-Resistance  Low Input Capacitance  Fast Switching Speed  Low Input/Output Leakage


    Original     		2N7002K 380mA 310mA AEC-Q101 DS30896 PDF

    2N7002K-7

    Abstract: 2N7002KQ-7 2N7002K1
    Text: 2N7002K N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary RDS ON max ID max TA = 25°C 2Ω @ VGS = 10V 380mA 3Ω @ VGS = 5V 310mA • • • • • 60V • • Low On-Resistance Low Input Capacitance Fast Switching Speed Low Input/Output Leakage Lead, Halogen and Antimony Free, RoHS Compliant "Green"


    Original     		2N7002K 380mA 310mA AEC-Q101 DS30896 621-2N7002K-7 2N7002K-7 2N7002K-7 2N7002KQ-7 2N7002K1 PDF

    2n7002k EQUIVALENT

    Abstract: No abstract text available
    Text: 2N7002K N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary RDS ON max ID max TA = 25°C 2Ω @ VGS = 10V 380mA 3Ω @ VGS = 5V 310mA • • • • • 60V • • Low On-Resistance Low Input Capacitance Fast Switching Speed Low Input/Output Leakage Lead, Halogen and Antimony Free, RoHS Compliant "Green"


    Original     		2N7002K 380mA 310mA AEC-Q101 DS30896 2n7002k EQUIVALENT PDF

    MARKING C7K

    Abstract: 2N7002KQ-13 2N7002K-7
    Text: 2N7002K N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary RDS ON max ID max TA = 25°C 2Ω @ VGS = 10V 380mA 3Ω @ VGS = 5V 310mA • • • • • 60V • • Low On-Resistance Low Input Capacitance Fast Switching Speed Low Input/Output Leakage Lead, Halogen and Antimony Free, RoHS Compliant "Green"


    Original     		2N7002K 380mA 310mA AEC-Q101 DS30896 MARKING C7K 2N7002KQ-13 2N7002K-7 PDF

    Untitled

    Abstract: No abstract text available
    Text: 2N7002K N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary V BR DSS Features and Benefits RDS(ON) max ID max TA = 25°C 2Ω @ VGS = 10V 380mA 3Ω @ VGS = 5V 310mA • • • • • • • Description and Applications Mechanical Data This MOSFET has been designed to minimize the on-state resistance


    Original     		2N7002K 380mA 310mA DS30896 PDF

    MARKING C7K

    Abstract: 2N7002K-7 2n7002k EQUIVALENT
    Text: 2N7002K Green N-CHANNEL ENHANCEMENT MODE MOSFET Features and Benefits V BR DSS RDS(ON) max 60V 2Ω @ VGS = 10V 3Ω @ VGS = 5V ID max TA = +25°C 380mA 310mA Description • Low On-Resistance • Low Input Capacitance • Fast Switching Speed • Low Input/Output Leakage


    Original     		2N7002K 380mA 310mA AEC-Q101 DS30896 MARKING C7K 2N7002K-7 2n7002k EQUIVALENT PDF

    MARKING C7K

    Abstract: MSOT-23 2n7002k EQUIVALENT
    Text: 2N7002K N-CHANNEL ENHANCEMENT MODE MOSFET Features and Benefits V BR DSS RDS(ON) max 60V 2Ω @ VGS = 10V 3Ω @ VGS = 5V ID max TA = +25°C 380mA 310mA Description • Low On-Resistance  Low Input Capacitance  Fast Switching Speed  Low Input/Output Leakage


    Original     		2N7002K 380mA 310mA AEC-Q101 DS30896 MARKING C7K MSOT-23 2n7002k EQUIVALENT PDF

    DMN65D8L-7

    Abstract: No abstract text available
    Text: DMN65D8L N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary V BR DSS Features RDS(ON) Package 3Ω @ VGS = 10V 60V SOT23 ID TA = +25°C 310mA 270mA 4Ω @ VGS = 5V Description This new generation MOSFET has been designed to minimize the onstate resistance (RDS(on) and yet maintain superior switching


    Original     		DMN65D8L 310mA 270mA AEC-Q101 DS35923 DMN65D8L-7 PDF

    DMN65D8L-7

    Abstract: dmn65d8l
    Text: DMN65D8L N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary V BR DSS Features RDS(ON) Package 3Ω @ VGS = 10V 60V SOT23 ID TA = +25°C 310mA 270mA 4Ω @ VGS = 5V Description This new generation MOSFET has been designed to minimize the onstate resistance (RDS(on) and yet maintain superior switching


    Original     		DMN65D8L 310mA 270mA AEC-Q101 DS35923 DMN65D8L-7 dmn65d8l PDF

    Untitled

    Abstract: No abstract text available
    Text: DMN65D8L N-CHANNEL ENHANCEMENT MODE MOSFET Features Product Summary V BR DSS RDS(ON) Package 3Ω @ VGS = 10V 60V SOT23 ID TA = +25°C 310mA 270mA 4Ω @ VGS = 5V Description This new generation MOSFET has been designed to minimize the onstate resistance (RDS(on) and yet maintain superior switching


    Original     		DMN65D8L 310mA 270mA AEC-Q101 DS35923 PDF

    c639

    Abstract: c33840 transistor C639 c33725 c877 C63716 marking code 67a sot23 6 c878 c33740 F423
    Text: Marking Code Sorted by Type Type Package Marking Type Package Marking BA 582 BA 585 BA 592 BA 595 BA 597 BA 885 BAL 74 BAL 99 BAR 14-1 BAR 15-1 BAR 16-1 BAR 17 BAR 60 BAR 61 BAR 63 BAR 63-03W BAR 63-04 BAR 63-05 BAR 63-06 BAR 64 BAR 64-03W BAR 64-04 BAR 64-05


    Original     		3-03W 4-03W 5-03W OD-123 OD-323 OT-23 c639 c33840 transistor C639 c33725 c877 C63716 marking code 67a sot23 6 c878 c33740 F423 PDF

    transistor C639

    Abstract: c639 transistor f423 F423 transistor f422 transistor f422 equivalent cx59 C640-10 f422 c640 transistor
    Text: Marking Code Sorted by Type Type Package Marking Type Package Marking BA 592 BA 595 BA 597 BA 885 BA 892 BAL 74 BAL 99 BAR 14-1 BAR 15-1 BAR 16-1 BAR 17 BAR 60 BAR 61 BAR 63 BAR 63-02W BAR 63-03W BAR 63-04 BAR 63-04W BAR 63-05 BAR 63-05W BAR 63-06 BAR 63-06W


    Original     		3-02W 3-03W 3-04W 3-05W 3-06W 4-02W 4-03W 4-04W 4-05W 4-06W transistor C639 c639 transistor f423 F423 transistor f422 transistor f422 equivalent cx59 C640-10 f422 c640 transistor PDF

    a8800

    Abstract: AME8800CEFTZ
    Text: AME, Inc. AME8800 / 8811 n General Description 300mA CMOS LDO n Functional Block Diagram The AME8800/8811 family of positive, linear regulators feature low quiescent current 30µA typ. with low dropout voltage, making them ideal for battery applications.


    Original     		AME8800 300mA AME8800/8811 OT-23, OT-25, OT-89 2006-DS8800/8811-P a8800 AME8800CEFTZ PDF

    Untitled

    Abstract: No abstract text available
    Text: AME, Inc. µProcessor Supervisory AME8500 n General Description n Typical Operating Circuit The AME8500 family allows the user to customize the CPU reset function without any external components. The user has a large choice of reset voltage thresholds, reset time intervals, and output driver configurations, all


    Original     		AME8500 AME8500 2007-DS8500-Q PDF

    IMBT4401

    Abstract: No abstract text available
    Text: DIODES INC 32E D • 2Ô4Ô7T3 0DDD3b3 S * D I I SURFACE MOUNT TRANSISTORS NPN T R A N SIST O R S - TO-236 SOT-23 PACKAGE 310 mW DISSIPATION RATING (See Note 4) 1M 1N 6T 6U 6R 6S h FE @ 50-150 100-300 50-150 100-300 100-300 100-300 V ce/ I c VcE SAT V /m A


    OCR Scan     		O-236 OT-23) IMBT3903 IMBT3904 IMBT4400 IMBT4401 IMBT2222 IMBT2222A PDF

    IMBT4403

    Abstract: IMBT4401 IMBT2222 6u sot-23 BC817-16 BC817-25 BC817-40 BC846A IMBT2222A IMBT3903
    Text: DIODES INC 32E » • 20407^3 00003b3 S H D I I SURFACE M O U N T TRA N SISTO RS -r^-oo, NPN T R A N S IS T O R S -T O -2 3 6 SOT-23 PACKAGE 310 mW DISSIPATION RATING (See Note 4) Type N u m b er M a rk in g Code IMBT3903 IMBT3904 IMBT4400 IMBT4401 IMBT2222


    OCR Scan     		-TO-236 OT-23) IMBT3903 IMBT3904 IMBT4400 IMBT4401 IMBT2222 IMBT2222A 10/mA BC807-16 IMBT4403 6u sot-23 BC817-16 BC817-25 BC817-40 BC846A PDF

    c639

    Abstract: C63716 C337 40 sot-23 MARKING 636 MARKING 68W SOT-23 C-639 F959 sot143 Marking code 5B B304A sot-89 MARKING CODE BN
    Text: SIEMENS Marking Code Sorted by Type Type Package Marking Type Package Marking BA 582 BA 585 BA 592 BA 595 BA 597 BA 885 BAL 74 BAL 99 BAR 14-1 BAR 15-1 BAR 16-1 BAR 17 BAR 60 BAR 61 BAR 63 BAR 63-03W BAR 63-04 BAR 63-05 BAR 63-06 BAR 64 BAR 64-03W BAR 64-04


    OCR Scan     		3-03W 4-03W 5-03W OD-123 OD-323 OT-23 c639 C63716 C337 40 sot-23 MARKING 636 MARKING 68W SOT-23 C-639 F959 sot143 Marking code 5B B304A sot-89 MARKING CODE BN PDF

    IMBT4403

    Abstract: IMBT4401 5n80 IMBT2222 BC817-16 BC817-25 BC817-40 BC846A IMBT2222A IMBT3903
    Text: TAIWAN LITON ELECTRONIC kiAirr Afl3sb'ìs ooo4oa3 ?ifi « t l i t D ^ CÌE SURFACE MOUNT TRANSISTORS 'Z'l-D0 N P N T R A N S IS T O R S - SOT-23 PACKAGE 310 m W DISSIPATION RATING See Note 4) OPERATING/STORAGE TEMPERATURE -55°C to +150°C CHARACTERISTICS @ TA 25°C


    OCR Scan     		G0D40fl3 OT-23 IMBT3903 IMBT3904 IMBT4400 10Ol3Â IMBT4401 10CX3> IMBT2222 BC807-16 IMBT4403 5n80 BC817-16 BC817-25 BC817-40 BC846A IMBT2222A PDF

    BC807-16

    Abstract: BC807-25 BC807-40 BC817
    Text: BC807-16/ -25/ -40 TRANSYS ELECTRONICS PNP SURFACE MOUNT TRANSISTOR LIMITED Features 310 mW Power Dissipation Ideally Suited for Automatic Insertion Epitaxial Planar Die Construction For Switching, AF Driver and Amplifier Applications Complementary NPN Types Available BC817


    OCR Scan     		BC807-16/ BC817) OT-23, MIL-STD-202, BC807-16 BC807-25 BC807-40 OT-23 BC817 PDF

    Untitled

    Abstract: No abstract text available
    Text: BC807 -16/ -25/ -40 VISHAY PNP SURFACE MOUNT TRANSISTORS /uTE M ir I POWER SEMICONDUCTOR J Features 310 mW Power Dissipation Ideally Suited tor Automatic Insertion Epitaxial Planar Die Construction For Switching, AF Driver and Amplitier Applications Complementary NPN Types Available BC817)


    OCR Scan     		BC807 BC817) OT-23, MIL-STD-202, BC807-16 BC807-25 BC807-40 OT-23 DS11208 BC807-16/-25/-40 PDF

    BC807-16

    Abstract: BC807-25 BC807-40 BC817
    Text: BC807-16/ -25/ -40 PNP SURFACE MOUNT TRANSISTOR Features 310 mW Power Dissipation Ideally Suited for Automatic Insertion Epitaxial Planar Die Construction For Switching, AF Driver and Amplifier Applications Complementary NPN Types Available BC817 SOT-23


    OCR Scan     		BC807-16/ BC817) OT-23, MIL-STD-202, BC807-16 BC807-25 BC807-40 DS11208 BC807-16/-25/-40 BC817 PDF

    Untitled

    Abstract: No abstract text available
    Text: BC817-16 / -25 / -40 VISHAY NPN SURFACE MOUNT SMALL SIGNAL TRANSISTORS /uT E M ir I POWER SEMICONDUCTOR J Features 310 mW Power Dissipation Ideally Suited tor Automatic Insertion Epitaxial Planar Die Construction For Switching, AF Driver and Amplitier Applications


    OCR Scan     		BC817-16 BC807) OT-23 OT-23, MIL-STD-202, BC817-25 BC817-40 DS11107 BC817-16/-25/-40 PDF