SOT23 ULS Search Results

Contextual Info: SOT23 N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET ISSUE 3 -JANUARY 1996_ FEATURES * ^ D S I o n F 5 i2 * 60 V o lt V DS C O M PLEM ENTAR Y TYPE • ZVP3306F PAR TM ARKING DETAIL - MC G SOT23 ABSOLUTE MAXIMUM RATINGS. PARAMETER SY M BO L

bs250f

Abstract: GS SOT23
Contextual Info: SOT23 P-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET BS250F ISSUE 3 - JANUARY 1996 PAR TM ARKING DETAIL - M X SOT23 ABSOLUTE MAXIMUM RATINGS. PARAMETER SYM BO L D ra in -S o u rc e V o lta g e V qs -45 V C o n tin u o u s D ra in C u rre n t at Tamb=25°C •o

Contextual Info: Surface M ount Dual Zener Diodes 350mW Dual Zener Diodes/SOT23 Type Number Marking Code Maximum Zener Impedance Zener Voltage Range* VZ @ Izr ZZT @ !zt Typical Temperature Coefficient TC ZZK @ >ZK Volts O hm s mA O hm s mA VI V2 V3 2.5-2.9 2.8-3.2 3.1-3.5

tantal

Contextual Info: SOT23-6W 120mA 2ch LDO REGULATORS NO. EA-077-0207 51 6 5,(6 OUTLINE 7KH 51 6HULHV DUH YROWDJH UHJXODWRU ,&V ZLWK KLJK RXWSXW YROWDJH DFFXUDF\ ORZ VXSSO\ FXUUHQW ORZ GURSRXW DQG KLJK ULSSOH UHMHFWLRQ E\ &026 SURFHVV (DFK RI WKHVH YROWDJH UHJXODWRU ,&V FRQVLVWV RI D YROWDJH UHIHUHQFH XQLW DQ

Contextual Info: SOT23 N-CHANNEL ENHANCEMENT MODE VERTICAL DM OS FET ISSUE 4 - APRIL 1998_ FEATURES * b v dss = io o v Low Threshold PARTMARKING DETAIL -S A A ABSOLUTE MAXIMUM RATINGS. PARAM ETER SYMBOL D ra in -S o u rc e V o lta g e V ds VALUE

sot236 mark code GRF

Contextual Info: 51B GRF SOT23-6 150mA 2ch LDO REGULATORS NO. EA-089-0204 51 6(5,(6 OUTLINE 7KH 51 6HULHV DUH &026EDVHG YROWDJH UHJXODWRU ,&V ZLWK KLJK RXWSXW YROWDJH DFFXUDF\ ORZ VXSSO\ FXUUHQW ORZ GURSRXW DQG KLJK ULSSOH UHMHFWLRQ (DFK RI WKHVH YROWDJH UHJXODWRU ,&V FRQVLVWV RI D YROWDJH UHIHUHQFH XQLW DQ HUURU

bf 333 transistor

Contextual Info: SOT23 NPN SILICON PLANAR MEDIUM POWER TRANSISTOR ISSUE 3 -OCTOBER 1995 G PARTMARKING DETAIL - EK ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL VALUE UNIT V ces 125 V C o lle c to r-E m itte r V o lta g e V CEO 125 V E m itter-B ase V oltag e P ea k P u ls e C u r r e n t

CW65

Contextual Info: BCW65 BCW66 SOT23 NPN SILICON PLANAR MEDIUM POWER TRANSISTORS ISSUE 3 - AUGUST 1935_ P A R T M A R K IN G D E T A IL S B C W 65A - EA B CW 65A R - BCW 65B - EB B C W 65B R - 4V 5V B CW 65C - EC B C W 65C R - 6V B CW 66F - EF B CW 66FR -

Contextual Info: SOT23 PNP SILICON PLANAR HIGH VOLTAGE TRANSISTOR FMMT596 ISSUE 3 - NOVEMBER 1995_ O P A R T M A R K iN G D E TA IL - 596 ABSOLUTE MAXIMUM RATINGS. PARAM ETER SYM BOL C o lle c to r-B a s e V o lta g e C o lle c to r-E m itte r V o lta g e VALUE U N IT

J203

Contextual Info: FMMJ201 to FM M J204 SOT23 N-CHANNEL SILICON JUNCTION FIELD EFFECT TRANSISTORS P A R T M A R K IN G D E T A IL S : FM M J201 - POI FM M J202 - PO2 FM M J203 - PO3 F M M J204 - PO4 ABSOLUTE M A X IM U M RATINGS at Tamb = 2 5 °C Gate Drain or G ate-S ource V oltag e Notes

SS80B

Contextual Info: SOT23 PNP SILICON PLANAR SWITCHING TRANSISTORS ISSUE 2 - SEPTEMBER 95 Q_ P A R T M A R K IN G D E TA ILS - B S S 82B - CL B SS82C - CM BSS82B BSS82C ABSOLUTE MAXIMUM RATINGS. PARAM ETER SYM BOL VALUE U N IT V CBO -60 V V CEO -60 V C o lle c to r-B a s e V o lta g e

Contextual Info: SOT23 NPN SILICON PLANAR VHF/UHF TRANSISTOR ISSUE 2 - JANUARY 1996 P A R T M A R K IN G D E T A IL S - 3B ABSOLUTE MAXIMUM RATINGS. PARAM ETER SYMBOL C o llec to r-B as e V o lta g e C o lle c to r-E m itte r V o lta g e VA LU E U N IT VcBO 30 V V CEQ 15 V

BSS79C

Contextual Info: SOT23 NPN SILICON PLANAR SWITCHING TRANSISTOR ISSUE 2 - SEPTEMBER 95 Q_ P A R T M A R K IN G D E TA ILS - B S S 79B - CE B SS79C - CF BSS79B BSS79C ABSOLUTE MAXIMUM RATINGS. PARAM ETER SYM BOL C o lle c to r-B a s e V o lta g e C o lle c to r-E m itte r V o lta g e

Contextual Info: SOT23 PNP SILICON PLANAR MEDIUM POWER TRANSISTOR ISSUE 3 - OCTOBER 1995_ _ FE A TU R E S * 6 0 V o lt V CE0 * 1 A m p c o n tin u o u s c u rre n t C O M P L E M E N T A R Y TY P E - FM M T451 P A R T M A R K IN G D E T A IL - 551 ABSOLUTE MAXIMUM RATINGS.

sot59

Contextual Info: Philips Sem iconductors Small-signal Transistors General M O U NTIN G AND SOLDERING Screen printing M ounting m ethods This is the best high-volum e production m ethod of solder paste application. An em ulsion-coated, fine mesh screen with apertures etched in the emulsion to coincide with the

MARKING 43 SOT23 REGULATOR

Abstract: MARKING ZE SOT-23 TVS in SOT-23 marking 8A sot-23 8k sot 23 marking 8Y SOT23 8J SOT23 8C SOT-23 8c SOT 23 marking 46 sot-23
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MMBZ5221BLT1 SERIES 225 mW SOT-23 Zener Voltage Regulator Diodes 225 mW SOT-23 GENERAL DATA APPLICABLE TO ALL SERIES IN THIS GROUP Zener Voltage Regulator Diodes u Manufacturing Locations: 3 1 Cathode Anode WAFER FAB: Phoenix, Arizona

marking code pa sot-26

Abstract: smd SOT26 SMD MARKING CODE 26 sot-363 CMDD6001 smd transistor marking PA SMD MARKING CODE sot 26 smd marking 30 SOD 23 marking CODE R SMD DIODE on semiconductor marking code sot
Contextual Info: PRODUCT announcement Ultra Low Leakage Diodes in SOT-26, SOT-23, SOT-363, SOD-323, SOD-523 and SOT-563 packages SOT-26 SOT-23 SOT-363 SOD-323 SOD-523 SOT-563 features • Ultra Low Leakage: 500pA max. • VRRM: 100Volts • Available in six space saving SMD packages

Contextual Info: Order this data sheet by MMBZ15VDLT1/D MOTOROLA SEMICONDUCTOR TECHNICAL DATA 15 Volt SOT-23 Bipolar Zener Overvoltage Transient Suppressor This monolithic silicon zener device is designed for applications requiring transient overvol­ tage protection capability. It is intended for use in voltage and ESD sensitive equipm ent such as

BSN20 MARKING

Abstract: BSN20
Contextual Info: G en era l \J S e m i c o n d u c t o r _ BSN20 N-Channel Enhancement-Mode MOSFET % Vds 5 0 V RdS ON 6 f i Id 1 8 0 m A TO-236AB (SOT-23) •122(3.1) .110(2.8) 0.031 (0.8) .016 (0.4) T o p V ie w R+ 1— co m 0 035 (0.9) CO in m o o Pin Configuration

AS433

Abstract: LT1431 2F SOT23
Contextual Info: SEMICONDUCTOR Excellence in Analog Power Products AS433/AS433L U ltra 2.5V Precision A djustable Shunt Regulator 150mA/100mA FEATURES APPLICATIONS • • • • • • • • • • • • • • • Trim m ed Bandgap up to 0.2% W ide O perating C u rre n t. 1mA to 150/100mA

SOT-23 Product Code bss123

Abstract: DSS SOT23 marking 9a sot-23
Contextual Info: ^ B S S 1 23 Supertex ine. N-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information Standard Commercial Devices BVdgs R dS ON (max) îf b v dss/ 100V 6£2 0.5A Product marking for SOT-23: Order Number / Package SOT-23 SA* BSS123 where * = 2-week alpha date code

yna sot23

Abstract: BAS21 SOD323 diode ep sod-323 BAV21ws E8
Contextual Info: v G eneral S e m ic o n d u c t o r BAS19thru BAS21 % Small Signal Diodes Features • Silicon Epitaxial Planar Diode TO-236AB SOT-23 • Fast switching diode in case SOT-23, especially suited for automatic insertion. •These diodes are also available in other case

23AG

Abstract: STS3405
Contextual Info: STS3405 S a mHop Microelectronics C orp. Ver 1.1 P-Channel Enhancement Mode Field Effect Transistor FEATURES Super high dense cell design for low R DS ON . PRODUCT SUMMARY V DSS ID R DS(ON) (m Ω) Max Rugged and reliable. 100 @ VGS=-10V -30V SOT-23 package.

STS3405

Contextual Info: STS3405 Green Product S a mHop Microelectronics C orp. Ver 1.1 P-Channel Enhancement Mode Field Effect Transistor PRODUCT SUMMARY V DSS ID R DS ON (m Ω) Max FEATURES Super high dense cell design for low R DS(ON). Rugged and reliable. 100 @ VGS=-10V -30V