c639
Abstract: c33840 transistor C639 c33725 c877 C63716 marking code 67a sot23 6 c878 c33740 F423
Text: Marking Code Sorted by Type Type Package Marking Type Package Marking BA 582 BA 585 BA 592 BA 595 BA 597 BA 885 BAL 74 BAL 99 BAR 14-1 BAR 15-1 BAR 16-1 BAR 17 BAR 60 BAR 61 BAR 63 BAR 63-03W BAR 63-04 BAR 63-05 BAR 63-06 BAR 64 BAR 64-03W BAR 64-04 BAR 64-05
|
Original
|
3-03W
4-03W
5-03W
OD-123
OD-323
OT-23
c639
c33840
transistor C639
c33725
c877
C63716
marking code 67a sot23 6
c878
c33740
F423
|
PDF
|
c639
Abstract: C63716 C337 40 sot-23 MARKING 636 MARKING 68W SOT-23 C-639 F959 sot143 Marking code 5B B304A sot-89 MARKING CODE BN
Text: SIEMENS Marking Code Sorted by Type Type Package Marking Type Package Marking BA 582 BA 585 BA 592 BA 595 BA 597 BA 885 BAL 74 BAL 99 BAR 14-1 BAR 15-1 BAR 16-1 BAR 17 BAR 60 BAR 61 BAR 63 BAR 63-03W BAR 63-04 BAR 63-05 BAR 63-06 BAR 64 BAR 64-03W BAR 64-04
|
OCR Scan
|
3-03W
4-03W
5-03W
OD-123
OD-323
OT-23
c639
C63716
C337 40
sot-23 MARKING 636
MARKING 68W SOT-23
C-639
F959
sot143 Marking code 5B
B304A
sot-89 MARKING CODE BN
|
PDF
|
transistor C639
Abstract: c639 transistor f423 F423 transistor f422 transistor f422 equivalent cx59 C640-10 f422 c640 transistor
Text: Marking Code Sorted by Type Type Package Marking Type Package Marking BA 592 BA 595 BA 597 BA 885 BA 892 BAL 74 BAL 99 BAR 14-1 BAR 15-1 BAR 16-1 BAR 17 BAR 60 BAR 61 BAR 63 BAR 63-02W BAR 63-03W BAR 63-04 BAR 63-04W BAR 63-05 BAR 63-05W BAR 63-06 BAR 63-06W
|
Original
|
3-02W
3-03W
3-04W
3-05W
3-06W
4-02W
4-03W
4-04W
4-05W
4-06W
transistor C639
c639
transistor f423
F423
transistor f422
transistor f422 equivalent
cx59
C640-10
f422
c640 transistor
|
PDF
|
sot143 marking code G2
Abstract: G2 MARKING CODE 5 PIN
Text: BF1005S. Silicon N-Channel MOSFET Tetrode • For low noise, high gain controlled input stages up to 1 GHz • Operating voltage 5 V • Integrated biasing network Drain AGC HF Input G2 G1 HF Output + DC GND EHA07215 ESD: Electrostatic discharge sensitive device, observe handling precaution!
|
Original
|
BF1005S.
EHA07215
BF1005S
BF1005SR
BF1005SW
OT143
OT143R
OT343
BF1005S,
sot143 marking code G2
G2 MARKING CODE 5 PIN
|
PDF
|
BF1005
Abstract: No abstract text available
Text: BF1005. Silicon N-Channel MOSFET Tetrode • For low noise, high gain controlled input stages up to 1 GHz • Operating voltage 5V • Integrated biasing network Drain AGC HF Input G2 G1 GND HF Output + DC EHA07215 ESD: Electrostatic discharge sensitive device, observe handling precaution!
|
Original
|
BF1005.
EHA07215
BF1005
BF1005R
BF1005W*
OT143
OT143R
OT343
BF1005,
|
PDF
|
Untitled
Abstract: No abstract text available
Text: BF1005. Silicon N-Channel MOSFET Tetrode • For low noise, high gain controlled input stages up to 1 GHz • Operating voltage 5V • Integrated biasing network Drain AGC RF Input G2 G1 RF Output + DC GND ESD Electrostatic discharge sensitive device, observe handling precaution!
|
Original
|
BF1005.
BF1005
OT143
BF1005R
OT143R
BF1005W*
OT343
|
PDF
|
BF1009SW
Abstract: BF1009 marking code g2s
Text: BF1009S. Silicon N_Channel MOSFET Tetrode • For low noise, high gain controlled input stage up to 1 GHz • Operating voltage 9 V • Integrated biasing network Drain AGC HF Input G2 G1 HF Output + DC GND EHA07215 ESD: Electrostatic discharge sensitive device, observe handling precaution!
|
Original
|
BF1009S.
EHA07215
BF1009S
BF1009SR
OT143
OT143R
BF1009S,
BF1009SR
BF1009W
BF1009SW
BF1009
marking code g2s
|
PDF
|
Untitled
Abstract: No abstract text available
Text: BF1005. Silicon N-Channel MOSFET Tetrode • For low noise, high gain controlled input stages up to 1 GHz • Operating voltage 5V • Integrated biasing network Drain AGC RF Input G2 G1 RF Output + DC GND ESD Electrostatic discharge sensitive device, observe handling precaution!
|
Original
|
BF1005.
BF1005
BF1005R
OT143
OT143R
|
PDF
|
BFP181
Abstract: No abstract text available
Text: BF1005S. Silicon N-Channel MOSFET Tetrode • For low noise, high gain controlled input stages up to 1 GHz • Operating voltage 5 V • Integrated biasing network Drain AGC RF Input G2 G1 RF Output + DC GND ESD Electrostatic discharge sensitive device, observe handling precaution!
|
Original
|
BF1005S.
BF1005S
BF1005SR
OT143
OT143R
BFP181
|
PDF
|
BF1009SW
Abstract: No abstract text available
Text: BF1009S. Silicon N_Channel MOSFET Tetrode • For low noise, high gain controlled input stage up to 1 GHz • Operating voltage 9 V • Integrated biasing network Drain AGC RF Input G2 G1 RF Output + DC GND ESD Electrostatic discharge sensitive device, observe handling precaution!
|
Original
|
BF1009S.
BF1009S
BF1009SR
OT143
OT143R
BF1009S,
BF1009SR
BF1009W
10mponents
BF1009SW
|
PDF
|
Untitled
Abstract: No abstract text available
Text: BF2030. Silicon N-Channel MOSFET Tetrode • For low noise, high gain controlled input stages up to 1GHz • Operating voltage 5V • Pb-free RoHS compliant package 1) • Qualified according AEC Q101 Drain G2 G1 AGC RF Input RG1 RF Output + DC GND VGG
|
Original
|
BF2030.
BF2030
OT143
BF2030R
OT143R
BF2030W
OT343
|
PDF
|
Untitled
Abstract: No abstract text available
Text: BF2030. Silicon N-Channel MOSFET Tetrode • For low noise, high gain controlled input stages up to 1GHz • Operating voltage 5V Drain AGC RF Input RG1 G2 G1 RF Output + DC GND VGG ESD Electrostatic discharge sensitive device, observe handling precaution!
|
Original
|
BF2030.
BF2030
BF2030R
BF2030W
OT143
OT143R
OT343
BF2030,
BF2030W
|
PDF
|
sot143 marking code G2
Abstract: DIN 6784 BF2030 BF2030R BF2030W BFP181 BFP181R BGA420 E6327
Text: BF2030. Silicon N-Channel MOSFET Tetrode • For low noise, high gain controlled input stages up to 1GHz • Operating voltage 5V Drain AGC HF Input G2 G1 R G1 HF Output + DC GND VGG EHA07461 ESD: Electrostatic discharge sensitive device, observe handling precaution!
|
Original
|
BF2030.
EHA07461
BF2030
OT143
BF2030R
OT143R
BF2030W
OT343
sot143 marking code G2
DIN 6784
BF2030
BF2030R
BF2030W
BFP181
BFP181R
BGA420
E6327
|
PDF
|
BF1005SR
Abstract: No abstract text available
Text: BF1005S. Silicon N-Channel MOSFET Tetrode • For low noise, high gain controlled input stages up to 1 GHz • Operating voltage 5 V • Integrated biasing network Drain AGC HF Input G2 G1 HF Output + DC GND EHA07215 ESD: Electrostatic discharge sensitive device, observe handling precaution!
|
Original
|
BF1005S.
EHA07215
BF1005S
BF1005SR
BF1005SW
OT143
OT143R
OT343
BF1005S,
|
PDF
|
|
Untitled
Abstract: No abstract text available
Text: SLVE2.8 Preliminary Data Low Voltage TVS Diode Array PRELIMINARY & SLVG2.8 TEL:805-498-2111 FAX:805-498-3804 DESCRIPTION FEATURES: • • The SLV series of transient voltage suppressors are designed to protect low voltage semiconductor components which are connected to data and
|
Original
|
|
PDF
|
E6327
Abstract: DIN 6784 BF2040 BF2040R BF2040W BFP181 BGA420 sot143 marking code G2 p 1S marking SOT143
Text: BF2040. Silicon N-Channel MOSFET Tetrode • For low noise , high gain controlled input stages up to 1GHz • Operating voltage 5 V ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Package Pin Configuration Marking BF2040
|
Original
|
BF2040.
BF2040
OT143
BF2040R
BF2040W
OT343
E6327
DIN 6784
BF2040
BF2040R
BF2040W
BFP181
BGA420
sot143 marking code G2
p 1S marking SOT143
|
PDF
|
SEMTECH MARKING sot-143
Abstract: No abstract text available
Text: SLVE2.8 Preliminary Data Low Voltage TVS Diode Array ¡ n = [] & SLVG2.8 TEL805-498-2111 FAX:805-498-3804 PRELIMINARY DESCRIPTION FEATURES: The SLV series of transient voltage suppressors are designed to protect low voltage semiconductor components which are connected to data and
|
OCR Scan
|
TEL805-498-2111
CA91320
SEMTECH MARKING sot-143
|
PDF
|
BF998B-GS08
Abstract: NATIONAL SEMICONDUCTOR MARKING CODE sot-143 sot143 code marking MS BF998A BF998A-GS08 BF998 VISHAY application BF998 BF998RAW-GS08
Text: BF998 / BF998R / BF998RW Vishay Semiconductors N-Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode 2 1 Features • • • • • • • • • SOT-143 Integrated gate protection diodes Low noise figure e3 Low feedback capacitance High cross modulation performance
|
Original
|
BF998
BF998R
BF998RW
2002/95/EC
2002/96/EC
OT-143
OT-143R
OT-343R
OT-143
BF998B-GS08
NATIONAL SEMICONDUCTOR MARKING CODE sot-143
sot143 code marking MS
BF998A
BF998A-GS08
BF998 VISHAY
application BF998
BF998RAW-GS08
|
PDF
|
Untitled
Abstract: No abstract text available
Text: Preliminary Data Low Voltage TVS Diode Array SLVE2.8 SLVE3.3 SLVG2.8 SLVG3.3 TEL: 805-498-2111 PRELIMINARY DESCRIPTION FA X: 805-498-3804 FEATURES: The SLV series of transient voltage suppressors are designed to protect low voltage semiconductor components which are connected to data and
|
OCR Scan
|
|
PDF
|
marking code abc
Abstract: marking code ga sot 363 G4 SOT-363 Marking G4 SOT363 sot-23 MARKING GU 5968-7701E marking code tc sot 363 389C 389E G3 SOT-23
Text: Surface Mount RF PIN Switch Diodes Technical Data HSMP-389x Series HSMP-489x Series Features • Switching – Low Capacitance – Low Resistance at Low Current • Low Failure in Time FIT Rate[1] • Matched Diodes for Consistent Performance • Better Thermal
|
Original
|
HSMP-389x
HSMP-489x
m70-3
OT-363
SC70-6
5968-7701E
5989-0486EN
marking code abc
marking code ga sot 363
G4 SOT-363
Marking G4 SOT363
sot-23 MARKING GU
5968-7701E
marking code tc sot 363
389C
389E
G3 SOT-23
|
PDF
|
sot-23 MARKING GU
Abstract: Marking Code ABC marking code ga sot 363 marking G5 SC-70 marking CODE GA sot363 Marking Code m sc70-6 389V sot marking code G4 jedec SC-70-6 package marking code T1
Text: HSMP-389x Series, HSMP-489x Series Surface Mount RF PIN Switch Diodes Data Sheet Description/Applications Features The HSMP-389x series is optimized for switching applications where low resistance at low current and low capacitance are required. The HSMP-489x series products
|
Original
|
HSMP-389x
HSMP-489x
OT-323
SC70-3
OT-363
SC70-6
5989-0486EN
AV02-0813EN
sot-23 MARKING GU
Marking Code ABC
marking code ga sot 363
marking G5 SC-70
marking CODE GA sot363
Marking Code m sc70-6
389V
sot marking code G4
jedec SC-70-6 package
marking code T1
|
PDF
|
389C
Abstract: 389E HSMP-389L HSMP-389T marking CODE GA sot363 sot-23 MARKING CODE 54 sot-23 MARKING GU sot marking code G4 Marking I09 sot23 marking code g5
Text: HSMP-389x Series, HSMP-489x Series Surface Mount RF PIN Switch Diodes Data Sheet Description/Applications Features The HSMP-389x series is optimized for switching applications where low resistance at low current and low capacitance are required. The HSMP-489x series products
|
Original
|
HSMP-389x
HSMP-489x
OT-323
SC70-3
OT-363
SC70-6
5989-0486EN
389C
389E
HSMP-389L
HSMP-389T
marking CODE GA sot363
sot-23 MARKING CODE 54
sot-23 MARKING GU
sot marking code G4
Marking I09
sot23 marking code g5
|
PDF
|
hsmp-3800
Abstract: marking l4 sot-143
Text: Surface Mount PIN Diodes Technical Data HSMP-38XX and HSMP-48XX Series Features • Diodes Optimized for: Low Current Switching Low Distortion Attenuating Ultra-Low Distortion Switching Microwave Frequency Operation • Surface Mount SOT-23 and SOT-143 Packages
|
Original
|
HSMP-38XX
HSMP-48XX
OT-23
OT-143
HSMP-4810
hsmp-3800
marking l4 sot-143
|
PDF
|
VPT CONNECTORS
Abstract: marking 5a TVS SOT143
Text: SLVE2.8 & Low Voltage TVS Diode for ESD and Latch-Up Protection SLVG2.8 Revised - February 17, 1999 DESCRIPTION The SLV series of transient voltage suppressors are designed to protect low voltage semiconductor components which are connected to data and transmission lines from transients caused by
|
Original
|
OT-143
VPT CONNECTORS
marking 5a TVS SOT143
|
PDF
|