BF1009S |
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Infineon Technologies
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TRANS MOSFET N-CH 12V 0.025A 4SOT-143 |
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Original |
PDF
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BF1009S |
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Infineon Technologies
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Silicon N-Channel MOSFET Tetrode |
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Original |
PDF
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BF1009S |
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Infineon Technologies
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Single Full Biased; Package: PG-SOT143-4; ID (max): 25.0 mA; Ptot (max): 200.0 mW; gfs (typ): 30.0 mS; Gp (typ): 22.0 dB; F (typ): 1.4 dB; |
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Original |
PDF
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BF1009S |
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Siemens
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RF-Transistors, MMICs, RF-Diodes, AF-Diodes, AF-Schottky Diodes and RF-Schottky Diodes Guide |
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Original |
PDF
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BF1009S |
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Siemens
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Silicon N-Channel MOSFET Tetrode (For low noise, high gain controlled input stages up to 1GHz Operating voltage 9V Integrated bias network) |
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Original |
PDF
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BF1009SE6327 |
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Infineon Technologies
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FET Transistor, Enhancement, N Channel, ID 0.025A, Tape And Reel |
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Original |
PDF
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BF1009SE6327 |
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Infineon Technologies
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RF FETs, Discrete Semiconductor Products, MOSFET N-CH 12V 25MA SOT-143 |
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Original |
PDF
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BF1009SE6327HTSA1 |
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Infineon Technologies
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Discrete Semiconductor Products - Transistors - FETs, MOSFETs - RF - MOSFET N-CH 12V 25MA SOT-143 |
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Original |
PDF
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BF1009SR |
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Infineon Technologies
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Dual-MOS FET Monolithic Integrated Circuit |
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Original |
PDF
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BF1009SR |
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Infineon Technologies
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Silicon N-Channel MOSFET Tetrode |
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Original |
PDF
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BF1009SR |
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Infineon Technologies
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Single Full Biased; Package: PG-SOT143-4; ID (max): 25.0 mA; Ptot (max): 200.0 mW; gfs (typ): 30.0 mS; Gp (typ): 22.0 dB; F (typ): 1.4 dB; |
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Original |
PDF
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BF1009SRE6327 |
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Infineon Technologies
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TRANS MOSFET N-CH 12V 0.025A 4SOT-143R |
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Original |
PDF
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BF1009SRE6327 |
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Infineon Technologies
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RF FETs, Discrete Semiconductor Products, MOSFET N-CH 12V 25MA SOT-143R |
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Original |
PDF
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BF1009SRE6327HTSA1 |
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Infineon Technologies
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Discrete Semiconductor Products - Transistors - FETs, MOSFETs - RF - MOSFET N-CH 12V 25MA SOT-143R |
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Original |
PDF
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BF1009SW |
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Infineon Technologies
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Silicon N-Channel MOSFET Tetrode |
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Original |
PDF
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BF1009SW |
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Infineon Technologies
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TRANS MOSFET N-CH 12V 0.025A 4SOT-343 |
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Original |
PDF
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