Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    BFP181R Search Results

    BFP181R Datasheets (6)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    BFP181R Infineon Technologies For low-noise, high-gain broadband amplifiers at collector currents from 0.5 mA to 12 mA Original PDF
    BFP181R Infineon Technologies RF-Bipolar NPN Type Transistors with transition frequency of 8 GHz Original PDF
    BFP 181R Infineon Technologies RF-Bipolar NPN Type Transistors with transition frequency of 8 GHz Original PDF
    BFP181R Siemens RF-Transistors, MMICs, RF-Diodes, AF-Diodes, AF-Schottky Diodes and RF-Schottky Diodes Guide Original PDF
    BFP181R Siemens NPN Silicon RF Transistor (For low noise, high-gain broadband amplifiers at collector currents from 0.5mA to 12mA) Original PDF
    BFP181RE7764 Infineon Technologies TRANS GP BJT NPN 12V 0.02A 4SOT-143R T/R Original PDF

    BFP181R Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    BFP181R

    Abstract: No abstract text available
    Text: BFP181R NPN Silicon RF Transistor* • For low noise, high-gain broadband amplifiers at 3 collector currents from 0.5 mA to 12 mA • Pb-free RoHS compliant 2 4 • fT = 8 GHz, F = 0.9 dB at 900 MHz 1 package 1) • Qualified according AEC Q101 * Short term description


    Original     		PDF BFP181R OT143R BFP181R

    Untitled

    Abstract: No abstract text available
    Text: BFP181R NPN Silicon RF Transistor  For low noise, high-gain broadband amplifiers at collector currents from 0.5 mA to 12 mA  fT = 8 GHz F = 1.45 dB at 900 MHz ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking BFP181R


    Original     		PDF BFP181R OT143R

    BFP181R

    Abstract: No abstract text available
    Text: BFP181R NPN Silicon RF Transistor  For low noise, high-gain broadband amplifiers at collector currents from 0.5 mA to 12 mA  fT = 8 GHz F = 1.45 dB at 900 MHz ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking BFP181R


    Original     		PDF BFP181R OT143R BFP181R

    BFP181R

    Abstract: marking code RFs
    Text: BFP181R NPN Silicon RF Transistor* • For low noise, high-gain broadband amplifiers at 3 collector currents from 0.5 mA to 12 mA • fT = 8 GHz, F = 0.9 dB at 900 MHz 2 4 1 * Short term description ESD Electrostatic discharge sensitive device, observe handling precaution!


    Original     		PDF BFP181R OT143R BFP181R marking code RFs

    BFP181R

    Abstract: No abstract text available
    Text: BFP181R NPN Silicon RF Transistor  For low noise, high-gain broadband amplifiers at collector currents from 0.5 mA to 12 mA  fT = 8 GHz F = 1.45 dB at 900 MHz ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking BFP181R


    Original     		PDF BFP181R OT143R Jun-21-2001 BFP181R

    infineon AN077

    Abstract: BCR401R AN066 AN077 AN159 BCR402R BFP181R
    Text: BCR401R LED Driver Features • LED drive current of 10mA 3 • Output current adjustable up to 60mA with external resistor 2 4 1 • Supply voltage up to 18V • Easy paralleling of drivers to increase current • Low voltage overhead of 1.2V • High current accuracy at supply voltage variation


    Original     		PDF BCR401R OT143R BCR401R infineon AN077 AN066 AN077 AN159 BCR402R BFP181R

    BF5020

    Abstract: BF5020R BF5020W BFP181
    Text: BF5020. Silicon N-Channel MOSFET Tetrode • Low noise gain controlled input stages of UHF- and 3 VHF - tuners with 3 V up to 5 V supply voltage 2 4 • Integrated gate protection diodes 1 • Excellent noise figure • High gain, high forward transadmittance


    Original     		PDF BF5020. EHA07461 BF5020 OT143 BF5020R OT143R BF502 BF5020 BF5020R BF5020W BFP181

    Untitled

    Abstract: No abstract text available
    Text: BF2030. Silicon N-Channel MOSFET Tetrode • For low noise, high gain controlled input stages up to 1GHz • Operating voltage 5V • Pb-free RoHS compliant package 1) • Qualified according AEC Q101 Drain G2 G1 AGC RF Input RG1 RF Output + DC GND VGG


    Original     		PDF BF2030. BF2030 OT143 BF2030R OT143R BF2030W OT343

    Untitled

    Abstract: No abstract text available
    Text: BF5020. Silicon N-Channel MOSFET Tetrode • Low noise gain controlled input stages of UHF- and 3 VHF - tuners with 3 V up to 5 V supply voltage 4 • Integrated gate protection diodes 1 2 • Excellent noise figure • High gain, high forward transadmittance


    Original     		PDF BF5020. EHA07461 BF5020 OT143 BF5020R OT143R

    Untitled

    Abstract: No abstract text available
    Text: BF2030. Silicon N-Channel MOSFET Tetrode • For low noise, high gain controlled input stages up to 1GHz • Operating voltage 5V Drain AGC RF Input RG1 G2 G1 RF Output + DC GND VGG ESD Electrostatic discharge sensitive device, observe handling precaution!


    Original     		PDF BF2030. BF2030 BF2030R BF2030W OT143 OT143R OT343 BF2030, BF2030W

    Untitled

    Abstract: No abstract text available
    Text: BF5030. Silicon N-Channel MOSFET Tetrode • Designed for input stages of UHF- and 3 VHF-tuners with AGC function 2 4 • Supporting 5 V operations and 1 power saving 3 V operations • Integrated ESD gate protection diodes • Very low noise figure • High gain, high forward transadmittance


    Original     		PDF BF5030. EHA07461 BF5030 OT143 BF5030R OT143R

    ST194

    Abstract: BFP181R marking code g1s 3G1 transistor ST194E
    Text: ST194E6716 Silicon N_Channel MOSFET Tetrode • Short-channel transistor 3 with high S / C quality factor 2 4 • For low-noise, gain-controlled 1 input stage up to 1 GHz • Pb-free RoHS compliant package1) • Qualified according AEC Q101 ESD (Electrostatic discharge) sensitive device, observe handling precaution!


    Original     		PDF ST194E6716 OT143R ST194 BFP181R marking code g1s 3G1 transistor ST194E

    XM0830SJ

    Abstract: smd code marking 162 sot23-5 MARKING V14 SOT23-5 RF Transistor Selection smd code marking rf ft sot23 smd code marking NEC rf transistor sot-363 inf smd marking D3 SOT363 XM0860SH MGA51563
    Text: Selection Guide RF & Protection Devices [ www.infineon.com/rfandprotectiondevices ] 2 Contents Selection Guide 4 RF Bipolar Transistors & Active Bias Controller 4 RF Switches 6 RF MMICs 7 RF Diodes 8 RF MOSFET 16 RF Schottky Diodes 18 ESD and EMI Protection Devices and Filters


    Original     		PDF 24GHz BF517 BF770A BF771 BF775 BF799 BF799W BFP181 BFP181R BFP182 XM0830SJ smd code marking 162 sot23-5 MARKING V14 SOT23-5 RF Transistor Selection smd code marking rf ft sot23 smd code marking NEC rf transistor sot-363 inf smd marking D3 SOT363 XM0860SH MGA51563

    Untitled

    Abstract: No abstract text available
    Text: BF2040. Silicon N-Channel MOSFET Tetrode • For low noise , high gain controlled input stages up to 1GHz • Operating voltage 5 V • Pb-free RoHS compliant package • Qualified according AEC Q101 ESD (Electrostatic discharge) sensitive device, observe handling precaution!


    Original     		PDF BF2040. BF2040 OT143 BF2040R OT143R BF2040W OT343

    BGT24MTR11

    Abstract: AZ1045-04F BAR86-02LRH 24GHz Radar BGA628L7 SMV1705 BFR181W ALPHA&OMEGA DATE CODE marking code onsemi Diode 2SC4586
    Text: Selection Guide RF & Protection Devices www.infineon.com/rfandprotectiondevices 2 Contents Selection Guide 4 RF Bipolar Transistors & Active Bias Controller 4 RF Switches 6 RF MMICs 7 RF Diodes 9 RF MOSFET 16 RF Schottky Diodes 18 ESD and EMI Protection Devices and Filters


    Original     		PDF 24GHz BF517 BF770A BF771 BF799 BF799W BFP181 BFP182 BFP182R BFP182W BGT24MTR11 AZ1045-04F BAR86-02LRH 24GHz Radar BGA628L7 SMV1705 BFR181W ALPHA&OMEGA DATE CODE marking code onsemi Diode 2SC4586

    BF1005SR

    Abstract: No abstract text available
    Text: BF1005S. Silicon N-Channel MOSFET Tetrode • For low noise, high gain controlled input stages up to 1 GHz • Operating voltage 5 V • Integrated biasing network Drain AGC HF Input G2 G1 HF Output + DC GND EHA07215 ESD: Electrostatic discharge sensitive device, observe handling precaution!


    Original     		PDF BF1005S. EHA07215 BF1005S BF1005SR BF1005SW OT143 OT143R OT343 BF1005S,

    Untitled

    Abstract: No abstract text available
    Text: BCR402R LED Driver  Supplies stable bias current even at low battery voltage  Low voltage drop of 0.75V  Ideal for stabilizing bias current of LEDs  Negative temperature coefficient protects LEDs against thermal overload 4 1 3 2 EHA07188 Type Marking BCR402R


    Original     		PDF BCR402R EHA07188 OT143R

    Untitled

    Abstract: No abstract text available
    Text: BF998. Silicon N_Channel MOSFET Tetrode • Short-channel transistor with high S / C quality factor • For low-noise, gain-controlled input stage up to 1 GHz • Pb-free RoHS compliant package 1) • Qualified according AEC Q101 ESD (Electrostatic discharge) sensitive device, observe handling precaution!


    Original     		PDF BF998. BF998 OT143 BF998R OT143R

    BF1005

    Abstract: BF1005R BF1005W BFP181 BFP181R
    Text: BF1005. Silicon N-Channel MOSFET Tetrode • For low noise, high gain controlled input stages up to 1 GHz • Operating voltage 5V • Integrated biasing network • Pb-free RoHS compliant package 1) • Qualified according AEC Q101 Drain AGC RF Input


    Original     		PDF BF1005. BF1005 OT143 BF1005R OT143R BF1005 BF1005R BF1005W BFP181 BFP181R

    TRANSISTOR mosfet BF998

    Abstract: BF998 bf998 mosfet tetrode application note BF998 marking code BF998R BFP181 BFP181R 3G1 transistor
    Text: BF998. Silicon N_Channel MOSFET Tetrode • Short-channel transistor with high S / C quality factor • For low-noise, gain-controlled input stage up to 1 GHz • Pb-free RoHS compliant package 1) • Qualified according AEC Q101 ESD (Electrostatic discharge) sensitive device, observe handling precaution!


    Original     		PDF BF998. BF998 OT143 BF998R OT143R TRANSISTOR mosfet BF998 BF998 bf998 mosfet tetrode application note BF998 marking code BF998R BFP181 BFP181R 3G1 transistor

    sot143 marking code G2

    Abstract: DIN 6784 BF2030 BF2030R BF2030W BFP181 BFP181R BGA420 E6327
    Text: BF2030. Silicon N-Channel MOSFET Tetrode • For low noise, high gain controlled input stages up to 1GHz • Operating voltage 5V Drain AGC HF Input G2 G1 R G1 HF Output + DC GND VGG EHA07461 ESD: Electrostatic discharge sensitive device, observe handling precaution!


    Original     		PDF BF2030. EHA07461 BF2030 OT143 BF2030R OT143R BF2030W OT343 sot143 marking code G2 DIN 6784 BF2030 BF2030R BF2030W BFP181 BFP181R BGA420 E6327

    BF2040W

    Abstract: No abstract text available
    Text: BF2040. Silicon N-Channel MOSFET Tetrode • For low noise , high gain controlled input stages up to 1GHz • Operating voltage 5 V ESD Electrostatic discharge sensitive device, observe handling precaution! Type Package Pin Configuration Marking BF2040


    Original     		PDF BF2040. BF2040 OT143 BF2040R BF2040W OT343 BF2040W

    Untitled

    Abstract: No abstract text available
    Text: SIEMENS BFP 181R NPN Silicon RF Transistor • For low noise, high-gain broadband amplifiers at collector currents from 0.5mA to 12mA • f j = 8GHz F = 1.45dB at 900MHz RFs 1=E Q62702-F1685 2=C 3=E Package 03 BFP181R II ESP: Electrostatic discharge sensitive device, observe handling precaution!


    OCR Scan     		PDF 900MHz BFP181R Q62702-F1685 OT-143R BFP181R

    Untitled

    Abstract: No abstract text available
    Text: SIEMENS BFP181R NPN Silicon RF Transistor • For low noise, high-gain broadband amplifiers at collector currents from 0.5mA to 12mA • f j = 8GHz F = 1.45dB at 900MHz ESP: Electrostatic discharge sensitive device, observe handling precaution! Marking Ordering Code


    OCR Scan     		PDF BFP181R 900MHz Q62702-F1685 OT-143R 235fc