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    SOT-363 PWM Search Results

    SOT-363 PWM Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TPD4164F Toshiba Electronic Devices & Storage Corporation Intelligent power device (High voltage PWM DC brushless motor driver) / VBB=600 V / Iout=2 A / HSSOP31 Visit Toshiba Electronic Devices & Storage Corporation
    TPD4207F Toshiba Electronic Devices & Storage Corporation Intelligent power device (High voltage PWM DC brushless motor driver) / VBB=600 V / Iout=5 A / SSOP30 Visit Toshiba Electronic Devices & Storage Corporation
    TPD4204F Toshiba Electronic Devices & Storage Corporation Intelligent power device (High voltage PWM DC brushless motor driver) / VBB=600 V / Iout=2.5 A / SSOP30 Visit Toshiba Electronic Devices & Storage Corporation
    TPD4164K Toshiba Electronic Devices & Storage Corporation Intelligent power device (High voltage PWM DC brushless motor driver) / VBB=600 V / Iout=2 A / HDIP30 Visit Toshiba Electronic Devices & Storage Corporation
    TPD4163K Toshiba Electronic Devices & Storage Corporation Intelligent power device (High voltage PWM DC brushless motor driver) / VBB=600 V / Iout=1 A / HDIP30 Visit Toshiba Electronic Devices & Storage Corporation

    SOT-363 PWM Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    Untitled

    Abstract: No abstract text available
    Text: PPJT7600 20V Complementary Enhancement Mode MOSFET – ESD Protected Voltage 20 / -20V SOT-363 1 / -0.7A Current Unit: inch mm Features  Advanced Trench Process Technology  Specially Designed for Switch Load, PWM Application, etc.  ESD Protected


    Original     		PPJT7600 OT-363 2011/65/EU IEC61249 OT-363 MIL-STD-750, 2013-REV PDF

    PJT7600

    Abstract: No abstract text available
    Text: PPJT7600 20V Complementary Enhancement Mode MOSFET – ESD Protected Voltage 20 / -20V Current SOT-363 1 / -0.7A Unit: inch mm Features Application  Advanced Trench Process Technology  Specially Designed for Switch Load, PWM Application, etc.  ESD Protected


    Original     		PPJT7600 OT-363 2011/65/EU IEC61249 OT-363 MIL-STD-750, 2013-REV PJT7600 PDF

    Mosfet

    Abstract: 2N7002KG8 sot-363 702
    Text: 2N7002KG8 60V MOSFET Main Product Characteristics VDSS 60V RDS on 7.5ohm(max.) ID A SOT-363 Schematic Diagram Features and Benefits       Advanced trench MOSFET process technology Special designed for PWM, load switching and general purpose applications


    Original     		2N7002KG8 OT-363 Mosfet 2N7002KG8 sot-363 702 PDF

    N-Channel mosfet sot-363

    Abstract: SOT-363 PWM sot-363 n-channel mosfet TSM1426 pwm sot-363 n-channel mosfet transistor
    Text: TSM1426 Preliminary 30V N-Channel MOSFET SOT-363 PRODUCT SUMMARY VDS V RDS(on)(mΩ) Pin Definition: 1. Drain 6. Drain 2. Drain 5, Drain 3. Gate 4. Source 20 Features ID (A) 75 @ VGS = 10V 3.6 115 @ VGS = 4.5V 2.9 Block Diagram ● Advance Trench Process Technology


    Original     		TSM1426 OT-363 TSM1424CU6 N-Channel mosfet sot-363 SOT-363 PWM sot-363 n-channel mosfet TSM1426 pwm sot-363 n-channel mosfet transistor PDF

    Untitled

    Abstract: No abstract text available
    Text: PPJT7408 20V N-Channel Enhancement Mode MOSFET Voltage 20 V SOT-363 1.9A Current Unit : inch mm Features  RDS(ON) , VGS@4.5V, ID@1.9A<68mΩ  RDS(ON) , VGS@2.5V, ID@1.4A<80mΩ  RDS(ON) , VGS@1.8V, ID@1.0A<110mΩ  Advanced Trench Process Technology


    Original     		PPJT7408 OT-363 2011/65/EU IEC61249 OT-363 MIL-STD-750, 2014-REV PDF

    Untitled

    Abstract: No abstract text available
    Text: PPJT7800 20V N-Channel Enhancement Mode MOSFET – ESD Protected Voltage 20 V SOT-363 1A Current Unit: inch mm Features  RDS(ON) , VGS@4.5V, ID@1.0A<150mΩ  RDS(ON) , VGS@2.5V, ID@0.7A<215mΩ  RDS(ON) , VGS@1.8V, ID@0.3A<400mΩ  Advanced Trench Process Technology


    Original     		PPJT7800 OT-363 2011/65/EU IEC61249 OT-363 MIL-STD-750, 2013-REV PDF

    Untitled

    Abstract: No abstract text available
    Text: PPJT7800 20V N-Channel Enhancement Mode MOSFET – ESD Protected Voltage 20 V Current SOT-363 1A Unit: inch mm Features  RDS(ON) , VGS@4.5V, ID@1.0A<150mΩ  RDS(ON) , VGS@2.5V, ID@0.7A<215mΩ  RDS(ON) , VGS@1.8V, ID@0.3A<400mΩ  Advanced Trench Process Technology


    Original     		PPJT7800 OT-363 2011/65/EU IEC61249 OT-363 MIL-STD-750, 161ications 2013-REV PDF

    Untitled

    Abstract: No abstract text available
    Text: PPJT7801 20V P-Channel Enhancement Mode MOSFET – ESD Protected Voltage -20 V SOT-363 -0.7A Current Unit: inch mm Features  RDS(ON) , VGS@-4.5V, ID@-0.7A<325mΩ  RDS(ON) , VGS@-2.5V, ID@-0.6A<420mΩ  RDS(ON) , VGS@-1.8V, ID@-0.5A<600mΩ  Advanced Trench Process Technology


    Original     		PPJT7801 OT-363 2011/65/EU IEC61249 OT-363 MIL-STD-750, 2013-REV PDF

    Untitled

    Abstract: No abstract text available
    Text: PPJT7801 20V P-Channel Enhancement Mode MOSFET – ESD Protected Voltage -20 V SOT-363 -0.7A Current Unit: inch mm Features  RDS(ON) , VGS@-4.5V, ID@-0.7A<325mΩ  RDS(ON) , VGS@-2.5V, ID@-0.6A<420mΩ  RDS(ON) , VGS@-1.8V, ID@-0.5A<600mΩ  Advanced Trench Process Technology


    Original     		PPJT7801 OT-363 2011/65/EU IEC61249 OT-363 MIL-STD-750, 2013-REV PDF

    Untitled

    Abstract: No abstract text available
    Text: PPJT7802 20V N-Channel Enhancement Mode MOSFET – ESD Protected Voltage 20 V 0.5A Current SOT-363 Unit: inch mm Features  RDS(ON) , VGS@4.5V, ID@0.5A<0.4Ω  RDS(ON) , VGS@2.5V, ID@0.3A<0.7Ω  RDS(ON) , VGS@1.8V, ID@0.1A<1.2Ω(typ.)  Advanced Trench Process Technology


    Original     		PPJT7802 OT-363 2011/65/EU IEC61249 OT-363 MIL-STD-750, 2014-REV PDF

    heds 5310

    Abstract: VC 5022-2 p605 mosfet HEDS 6310 encoder heds 6310 acsl 086 s SMD MOSFET DRIVE 4606 Alps GMR sensor transistor 5503 dm logitech x 530
    Text: Avago Technologies www.avagotech.com AVAGO TECHNOLOGIES EBV Elektronik GmbH & Co. KG www.ebv.com Оптоэлектронные и СВЧ компоненты «Аваго Текнолоджиз» АПРЕЛЬ ОПТОЭЛЕКТРОННЫЕ И СВЧ КОМПОНЕНТЫ «АВАГО ТЕКНОЛОДЖИЗ»


    Original     		PDF

    2N6284 inverter schematic diagram

    Abstract: NTD18N06 MKP9V160 sine wave inverter tl494 circuit diagram ECL IC NAND adp3121 DARLINGTON TRANSISTOR ARRAY ezairo MC74HC4538 TIP142 6403 F
    Text: ON Semiconductor Master Components Selector Guide AC−DC Controllers and Regulators; Amplifiers and Comparators; Analog Switches; Bipolar Transistors; Clock and Data Distribution; Clock Generation; Custom; DC−DC Controllers, Converters, and Regulators; Digital


    Original     		SG388/D 2N6284 inverter schematic diagram NTD18N06 MKP9V160 sine wave inverter tl494 circuit diagram ECL IC NAND adp3121 DARLINGTON TRANSISTOR ARRAY ezairo MC74HC4538 TIP142 6403 F PDF

    IGBT Battery 120 watt Charger circuit diagrams

    Abstract: tl494 spice model four relay stabilizer circuit diagram 650 va gsm door lock circuit diagram MRC 433 mosfet MC34066 SOLUTION FOR SMPS USING TL494 MOSFET ESD Rated TL594 phone charger car power inverter TL494
    Text: BRD8016/D Rev. 0, Nov-2000 Wireless Component Solutions for Handsets and Accessories Wireless Component Solutions for Handsets and Accessories BRD8016/D Rev. 0, Nov–2000  SCILLC, 2000 “All Rights Reserved’’ WIRELESS EZFET is a trademark of Semiconductor Components Industries, LLC SCILLC .


    Original     		BRD8016/D Nov-2000 r14525 IGBT Battery 120 watt Charger circuit diagrams tl494 spice model four relay stabilizer circuit diagram 650 va gsm door lock circuit diagram MRC 433 mosfet MC34066 SOLUTION FOR SMPS USING TL494 MOSFET ESD Rated TL594 phone charger car power inverter TL494 PDF

    2x062h

    Abstract: gk105 1SS216 GK104 SMD Transistors w06 D20SB80 SMD marking 5As D25SB80 LRB706F-40T1G 2x062
    Text: Leshan Radio Company, Ltd. 2008 PRODUCTS CATALOGUE 目 录 CONTENT 开关二极管 SWITCHING DIODES. 1 1. SOD–923 Surface Mount Switching Diodes. 1


    Original     		ZMM22 ZMM24 ZMM27 ZMM43 ZMM47 2x062h gk105 1SS216 GK104 SMD Transistors w06 D20SB80 SMD marking 5As D25SB80 LRB706F-40T1G 2x062 PDF

    ic manual substitution FREE

    Abstract: NTR4170N
    Text: NCL30100 Fixed Off Time Switched Mode LED Driver Controller The NCL30100 is a compact switching regulator controller intended for space constrained constant current high−brightness LED driver applications where efficiency and small size are important. The


    Original     		NCL30100 NCL30100 NCL30100/D ic manual substitution FREE NTR4170N PDF

    2955E

    Abstract: TD 1409
    Text: MMFT2955E Preferred Device Power MOSFET 1 Amp, 60 Volts P–Channel SOT–223 This Power MOSFET is designed to withstand high energy in the avalanche and commutation modes. This new energy efficient device also offers a drain–to–source diode with a fast recovery time.


    Original     		MMFT2955E 2955E TD 1409 PDF

    marking code J1 sot23

    Abstract: No abstract text available
    Text: MMFT2N02EL Preferred Device Power MOSFET 2 Amps, 20 Volts N–Channel SOT–223 This Power MOSFET is designed to withstand high energy in the avalanche and commutation modes. This device is also designed with a low threshold voltage so it is fully enhanced with 5 Volts. This new


    Original     		MMFT2N02EL marking code J1 sot23 PDF

    MOSFET 4407

    Abstract: ncl3001 ncl30100 XC10B5 08053C225KAT MOSFET 4407 a b32021a3222m solar led we-pd4 SOT-363 PWM
    Text: NCL30100 Fixed Off Time Switched Mode LED Driver Controller The NCL30100 is a compact switching regulator controller intended for space constrained constant current high−brightness LED driver applications where efficiency and small size are important. The


    Original     		NCL30100 NCL30100 NCL30100/D MOSFET 4407 ncl3001 XC10B5 08053C225KAT MOSFET 4407 a b32021a3222m solar led we-pd4 SOT-363 PWM PDF

    NCL30100 D

    Abstract: MOSFET 4407 MOSFET 4407 a XC10B5 ncl3001 4407 mosfet NCL30100 NTGS4141NT1G ncl30010 B32021A3222M289
    Text: NCL30100 Fixed Off Time Switched Mode LED Driver Controller The NCL30100 is a compact switching regulator controller intended for space constrained constant current high−brightness LED driver applications where efficiency and small size are important. The


    Original     		NCL30100 NCL30100 NCL30100/D NCL30100 D MOSFET 4407 MOSFET 4407 a XC10B5 ncl3001 4407 mosfet NTGS4141NT1G ncl30010 B32021A3222M289 PDF

    STP4119

    Abstract: Full-bridge SG3525 APPLICATION NOTES sg3525 application note mc34063 step up with mosfet mc34063 step down with mosfet Full-bridge SG3525 sg3525 pwm INVERTER MJ2955 300 watts amplifier circuit diagram MT3336 sg3535a
    Text: ON Semiconductor Master Components Selector Guide Power Management, Amplifiers and Comparators, Analog Switches, Thyristors, Diodes, Rectifiers, Bipolar Transistors, FETs, Circuit Protection, Clock and Data Management, Interface, and Standard Logic Devices


    Original     		SG388/D May-2007 STP4119 Full-bridge SG3525 APPLICATION NOTES sg3525 application note mc34063 step up with mosfet mc34063 step down with mosfet Full-bridge SG3525 sg3525 pwm INVERTER MJ2955 300 watts amplifier circuit diagram MT3336 sg3535a PDF

    mps2112

    Abstract: UC3842 smps design with TL431 MPS2111 dc motor speed control tl494 TRANSISTOR MPS2112 ic equivalent book ncp1203 mosfet triggering circuit USING TL494 smps with uc3842 and tl431 SG3526 tip122 tip127 mosfet audio amp
    Text: SG388/D Rev. 4, May-2002 Master Components Selector Guide Master Components Selector Guide ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC SCILLC . SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular


    Original     		SG388/D May-2002 r14525 SG388 mps2112 UC3842 smps design with TL431 MPS2111 dc motor speed control tl494 TRANSISTOR MPS2112 ic equivalent book ncp1203 mosfet triggering circuit USING TL494 smps with uc3842 and tl431 SG3526 tip122 tip127 mosfet audio amp PDF

    mvc 043

    Abstract: No abstract text available
    Text: NTP75N03-06, NTB75N03-06 Power MOSFET 75 Amps, 30 Volts N–Channel TO–220 and D2PAK http://onsemi.com This 10 VGS gate drive vertical Power MOSFET is a general purpose part that provides the “best of design” available today in a low cost power package. Avalanche energy issues make this part an ideal


    Original     		NTP75N03-06, NTB75N03-06 MTP1306 mvc 043 PDF

    TRANSISTOR REPLACEMENT GUIDE

    Abstract: FS Oncore hf modem ofdm bts 2140 1b data sheet ISO 1302 uhf linear amplifier module linear amplifier 470-860 amplifier mrf247 class AB hf bipolar FM LDMOS freescale transistor
    Text: Quarter 4, 2004 SG1009Q42004 Rev 0 What’s New! Market Product 900 MHz Cellular Base Station MRF5S9070NR1, MRF5S9100MR1, MRF5S9100MBR1, MRF5S9100NR1, MRF5S9100NBR1, MRF5S9101MR1, MRF5S9101MBR1, MRF5S9101NR1, MRF5S9101NBR1, MRF9200LR3, MRF9200LSR3 CDMA 1.9 GHz Cellular Base Station


    Original     		SG1009Q42004 MRF5S9070NR1, MRF5S9100MR1, MRF5S9100MBR1, MRF5S9100NR1, MRF5S9100NBR1, MRF5S9101MR1, MRF5S9101MBR1, MRF5S9101NR1, MRF5S9101NBR1, TRANSISTOR REPLACEMENT GUIDE FS Oncore hf modem ofdm bts 2140 1b data sheet ISO 1302 uhf linear amplifier module linear amplifier 470-860 amplifier mrf247 class AB hf bipolar FM LDMOS freescale transistor PDF

    siemens profet overview

    Abstract: transistor SMD t34 transistor sc 308 235L 410E2 BTS308 BTS410H2 E3043 E3062 E3062A
    Text: SIEM EN S aaasbos ms 2 PROFET BTS 308 Smart Highside Power Switch Features • • • • • • • • • • • • • Overload protection Current limitation Short circuit protection Thermal shutdown Overvoltage protection including load dump Fast demagnetization ol inductive loads


    OCR Scan     		systems14) siemens profet overview transistor SMD t34 transistor sc 308 235L 410E2 BTS308 BTS410H2 E3043 E3062 E3062A PDF