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    Untitled

    Abstract: No abstract text available
    Text: PPJT7800 20V N-Channel Enhancement Mode MOSFET – ESD Protected Voltage 20 V SOT-363 1A Current Unit: inch mm Features  RDS(ON) , VGS@4.5V, ID@1.0A<150mΩ  RDS(ON) , VGS@2.5V, ID@0.7A<215mΩ  RDS(ON) , VGS@1.8V, ID@0.3A<400mΩ  Advanced Trench Process Technology


    Original     		PPJT7800 OT-363 2011/65/EU IEC61249 OT-363 MIL-STD-750, 2013-REV PDF

    Untitled

    Abstract: No abstract text available
    Text: PPJT7800 20V N-Channel Enhancement Mode MOSFET – ESD Protected Voltage 20 V Current SOT-363 1A Unit: inch mm Features  RDS(ON) , VGS@4.5V, ID@1.0A<150mΩ  RDS(ON) , VGS@2.5V, ID@0.7A<215mΩ  RDS(ON) , VGS@1.8V, ID@0.3A<400mΩ  Advanced Trench Process Technology


    Original     		PPJT7800 OT-363 2011/65/EU IEC61249 OT-363 MIL-STD-750, 161ications 2013-REV PDF