Untitled
Abstract: No abstract text available
Text: PPJT7801 20V P-Channel Enhancement Mode MOSFET – ESD Protected Voltage -20 V SOT-363 -0.7A Current Unit: inch mm Features RDS(ON) , VGS@-4.5V, ID@-0.7A<325mΩ RDS(ON) , VGS@-2.5V, ID@-0.6A<420mΩ RDS(ON) , VGS@-1.8V, ID@-0.5A<600mΩ Advanced Trench Process Technology
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Original
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PPJT7801
OT-363
2011/65/EU
IEC61249
OT-363
MIL-STD-750,
2013-REV
|
PDF
|
Untitled
Abstract: No abstract text available
Text: PPJT7801 20V P-Channel Enhancement Mode MOSFET – ESD Protected Voltage -20 V SOT-363 -0.7A Current Unit: inch mm Features RDS(ON) , VGS@-4.5V, ID@-0.7A<325mΩ RDS(ON) , VGS@-2.5V, ID@-0.6A<420mΩ RDS(ON) , VGS@-1.8V, ID@-0.5A<600mΩ Advanced Trench Process Technology
|
Original
|
PPJT7801
OT-363
2011/65/EU
IEC61249
OT-363
MIL-STD-750,
2013-REV
|
PDF
|