SODERABILITY Search Results

MCP1206FTE800

Abstract: MCP1206FTE900 MCP0805FTE601
Contextual Info: MULTILAYER FERRITE MCP POWER BEADS SPEER ELECTRONICS, INC. MULTI LAYER FERRITE POWER BEADS • Designed to reduce noise at frequencies • Standard EIA Packages: 0603, 0805, 1206 • Nickel Barrier with solder overcoat for excellent soderability • Magnetically Shielded

SJ 2518

Abstract: 100S 4000M CT42 104z
Contextual Info: J&P 金沛 SHJINPEI ELECTRONICS CO.，LTD 上海金沛电子有限公司 ADDRESS：Room 102,no.22,2518# hunan road,shanghai,china 中国 上海市沪南路 2518 栋 22 号 102 室 TEL：+008621-68062072 68062073 FAX：+008621-68062073-808 APPROVAL SHEET （ 承 认 书）

ram 2015

Abstract: M93C56 M27256 M2764A M27C64A QRR9804 M29F105 Part Marking STMicroelectronics flash memory M87C257 m29f002
Contextual Info: QRR9804 QUALITY & RELIABILITY REPORT January 1998 to December 1998 - EPROM, Flash Memory, EEPROM and NVRAM Products INTRODUCTION STMicroelectronics manufactures a wide range of memory types which include: Non-volatile memories: Flash memory, UV EPROM, OTP EPROM and

BV-1 501

Abstract: mk48t08 SGS M27C256 mk48t18 st microelectronics datecode M48T35 st microelectronics datecode M27C256 SGS-THOMSON ST25C16 CP 1005 marking 339 st microelectronics
Contextual Info: QRR9704 QUALITY & RELIABILITY REPORT January 1997 to December 1997- EPROM, FLASH Memory, EEPROM and NVRAM Products INTRODUCTION ST Microelectronics manufactures a wide range of memory types which include: Non-volatile memories: Flash memory, UV EPROM, OTP EPROM and

MK48T08

Abstract: mk48t18 M27128A M2716 M2732A M2764A QRR9802 Marking STMicroelectronics m24c32 m28c64d M24C64
Contextual Info: QRR9802 QUALITY & RELIABILITY REPORT July 1997 to June 1998 - EPROM, Flash Memory, EEPROM and NVRAM Products INTRODUCTION STMicroelectronics manufactures a wide range of memory types which include: Non-volatile memories: Flash memory, UV EPROM, OTP EPROM and

PBGA 256 reflow profile

Abstract: bga 196 land pattern Intel reflow soldering profile BGA BGA PACKAGE TOP MARK intel BGA PACKAGE thermal profile A5825-01 BGA and QFP Package BGA OUTLINE DRAWING bga Shipping Trays land pattern BGA 0.75
Contextual Info: Plastic Ball Grid Array PBGA Packaging 14.1 14 Introduction The plastic ball grid array (PBGA) has become one of the most popular packaging alternatives for high I/O devices in the industry. Its advantages over other high leadcount (greater than ~208 leads)

Diode SJ

Abstract: 100PF 100S 4000M T-10211 104 K capacitor 331 k capacitor capacitor 104 100v ceramic capacitor 104
Contextual Info: RoHS Compliant Axial Multilayer Ceramic Capacitor Ⅰ Features Wide capacitance, temperature, voltage and tolerance range; Industry sizes; Tape and Reel available for auto placement. Ⅱ、 General Characteristics Capacitance Range Temperature Coefficient

Capacitors

Abstract: CC41 CT41 Multilayer Chip Ceramic Capacitors CT41 Ceramic Capacitors 104 Ceramic chip Capacitors 104 B 103 Potentiometers 684 k 100 100S 4000M
Contextual Info: Elecsound Ceramic Capacitors CC41 CT41 Multilayer Chip Ceramic Capacitors Features The choice of dielectric is largely determined by the temperature stability required: NPO COG Ultra stable ClassⅠdielectric, with negligible dependence of electrical properties on temperature,

Contextual Info: MULTILAYER FERRITE MCI INDUCTOR SPEER ELECTRONICS, INC. MULTI LAYER FERRITE INDUCTORS • Monolithic structure for closed magnetic path elimates crosstalk and provides high reliability in a wide range of temperature and humidity ranges • Standard EIA Packages: 0603, 0805, 1206

Contextual Info: C.10 .26 'r r i . .32 .045 '' 1. SAMPLE ARE TO BE SUBMITTED FOR ENG‘G APPROVAL PRODUCTION IS TO BE IN ACCORDANCE WITH APPROVED SAMPLE. 2. MAX INITIAL INSERTION FORCE USING A 2 MICRO INCH POLISHED .128 t.0005 DIA. PIN WITH .062 RADIUS SHALL NOT EXCEED 12 LBS.

INDUCTOR CHIP FERRITE BEAD 0805

Contextual Info: MULTILAYER FERRITE MCI INDUCTOR SPEER ELECTRONICS, INC. MULTI LAYER FERRITE INDUCTORS • Monolithic structure for closed magnetic path elimates crosstalk and provides high reliability in a wide range of temperature and humidity ranges • Standard EIA Packages: 0603, 0805, 1206

MIL-STD-202f

Abstract: MIL-STD-202f 107G 103A 208H 210E JIS-C-5202-6
Contextual Info: TEPRO TYPE “TT” ELECTRO TECHNIK ENVIRONMENTAL CHARACTERISTICS: ITEM SPECIFICATIONS TEST METHOD JIS-C-5205-5.5 SHORT TIME OVERLOAD ± 0.5% + 0.05Ω RCWV*2.5 or max overload voltage, 5 seconds INSULATION RESISTANCE >1000mΩ MIL-STD-202F method 302 Apply 100VDC for 1 minute

Intel reflow soldering profile BGA

Abstract: A5832 JEDEC bga 63 tray Intel BGA cte table epoxy substrate BGA PROFILING A4470-01 Lead Free reflow soldering profile BGA land pattern BGA 196 a5764
Contextual Info: Ball Grid Array BGA Packaging 14.1 14 Introduction The plastic ball grid array (PBGA) has become one of the most popular packaging alternatives for high I/O devices in the industry. Its advantages over other high leadcount (greater than ~208 leads) packages are many. Having no leads to bend, the PBGA has greatly reduced coplanarity problems

Contextual Info: MULTILAYER FERRITE MCI INDUCTOR SPEER ELECTRONICS, INC. MULTI LAYER FERRITE INDUCTORS • Monolithic structure for closed magnetic path elimates crosstalk and provides high reliability in a wide range of temperature and humidity ranges • Standard EIA Packages: 0603, 0805, 1206

QRR0001

Abstract: ST16 m29f002 065um ST M27C256B PART MARKING FM27c1024 QRR000
Contextual Info: QRR0001 QUALITY & RELIABILITY REPORT April 1999 March 2000 EPROM, Flash Memory, EEPROM, NVRAM and SMARTCARD Products INTRODUCTION STMicroelectronics manufactures a wide range of memory types which include: Non-volatile memories: Flash memory, UV EPROM, OTP EPROM and

M96S66

Abstract: tsop 3846 ST M27C256B PART MARKING M27128 M2764A QRR9903
Contextual Info: QRR9903 QUALITY & RELIABILITY REPORT October 1998 September 1999 - EPROM, Flash Memory, EEPROM and NVRAM Products INTRODUCTION STMicroelectronics manufactures a wide range of memory types which include: Non-volatile memories: Flash memory, UV EPROM, OTP EPROM and

M27128

Abstract: M2764A QRR9902
Contextual Info: QRR9902 QUALITY & RELIABILITY REPORT July 1998 to June 1999 - EPROM, Flash Memory, EEPROM and NVRAM Products INTRODUCTION STMicroelectronics manufactures a wide range of memory types which include: Non-volatile memories: Flash memory, UV EPROM, OTP EPROM and

25X25

Abstract: Marking STMicroelectronics m27c256 QRR9904 ST16 M27C256 M27C320
Contextual Info: QRR9904 QUALITY & RELIABILITY REPORT January 1999 December 1999 EPROM, Flash Memory, EEPROM, NVRAM and SMARTCARD Products INTRODUCTION STMicroelectronics manufactures a wide range of memory types which include: Non-volatile memories: Flash memory, UV EPROM, OTP EPROM and

M25C

Abstract: Marking STMicroelectronics m27c256 QRR0001 QRR0002 ST16 M29W160 M275 M27C512 marking QRR000 ST M27C256B PART MARKING
Contextual Info: QRR0002 QUALITY & RELIABILITY REPORT July 1999 June 2000 EPROM, Flash Memory, EEPROM, NVRAM and SMARTCARD Products INTRODUCTION STMicroelectronics manufactures a wide range of memory types which include: Non-volatile memories: Flash memory, UV EPROM, OTP EPROM and

EIA 549 Class 130B transformer

Abstract: mcf 300.04 capacitor 225 35k 844 SMD av 1.40.00 mkt x2 .01uf NTC 20K honeywell 1000 rpm dc motor 12v 100watt BO 680Y clarostat POTENTIOMETER 73JA SMD MARKING CODE 503b 03028BR
Contextual Info: ND3% BASE1 XXXX0118-0396-1-P 396 TSQ: 3001 CMS: CMS-USM TS host OP: NN COMP: 20-07-11 Hour: 11:09 TS:TS date TS time CAPACITORS Find Datasheets Online CERAMIC CAPACITORS MULTILAYER CERAMIC CAPACITORS - 0.5pF TO 82,000pF 2 MULTILAYER CERAMIC CAPACITORS - 0.5pF TO 82,000pF CONT.

MIL-STD-202f

Abstract: TEPRO JIS 0402 208H 210E JIS-C-5202-6
Contextual Info: TEPRO TYPE “TR” ELECTRO TECHNIK ENVIRONMENTAL CHARACTERISTICS: ITEM SPECIFICATIONS TEST METHOD JIS-C-5205-5.5 SHORT TIME OVERLOAD ± 0.5% + 0.05Ω RCWV*2.5 or max overload voltage, 5 seconds INSULATION RESISTANCE >1000mΩ MIL-STD-202F method 302 Apply 100VDC for 1 minute

103A

Abstract: MIL-STD-202f 208H 210E JIS-C-5202-6 soderability
Contextual Info: TEPRO TYPE “TU” ELECTRO TECHNIK ENVIRONMENTAL CHARACTERISTICS: ITEM SPECIFICATIONS TEST METHOD JIS-C-5205-5.5 SHORT TIME OVERLOAD ± 0.5% + 0.05Ω RCWV*2.5 or max overload voltage, 5 seconds INSULATION RESISTANCE >1000mΩ MIL-STD-202F method 302 Apply 100VDC for 1 minute

ST M27C256B PART MARKING

Abstract: M29W080 QRR0003 stmicroelectronics datecode m27C256 Marking STMicroelectronics m27c256 m29w160 reliability report M29W160 QRR000 QRR0001 ST16
Contextual Info: QRR0003 QUALITY & RELIABILITY REPORT October 1999 September 2000 EPROM, Flash Memory, EEPROM, NVRAM and SMARTCARD Products INTRODUCTION STMicroelectronics manufactures a wide range of memory types which include: Non-volatile memories: Flash memory, UV EPROM, OTP EPROM and

BV-1

Abstract: M93C56 M27256 M2764A QRR9901 Solutions-76 Marking STMicroelectronics m27c256
Contextual Info: QRR9901 QUALITY & RELIABILITY REPORT April 1998 to March 1999 - EPROM, Flash Memory, EEPROM and NVRAM Products INTRODUCTION STMicroelectronics manufactures a wide range of memory types which include: Non-volatile memories: Flash memory, UV EPROM, OTP EPROM and