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    SMD A7C Search Results

    SMD A7C Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    BLM15PX121BH1D Murata Manufacturing Co Ltd FB SMD 0402inch 120ohm POWRTRN Visit Murata Manufacturing Co Ltd
    BLM15PX181SH1D Murata Manufacturing Co Ltd FB SMD 0402inch 180ohm POWRTRN Visit Murata Manufacturing Co Ltd
    BLM21HE802SN1L Murata Manufacturing Co Ltd FB SMD 0805inch 8000ohm NONAUTO Visit Murata Manufacturing Co Ltd
    BLM15PX330BH1D Murata Manufacturing Co Ltd FB SMD 0402inch 33ohm POWRTRN Visit Murata Manufacturing Co Ltd
    BLM15PX600SH1D Murata Manufacturing Co Ltd FB SMD 0402inch 60ohm POWRTRN Visit Murata Manufacturing Co Ltd

    SMD A7C Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    HIR26-21C

    Abstract: w32 smd transistor w32 smd transistor 143 17-21SYGC/S530-E2/TR8 3A-01-B74-Y9C-A1S1T1DH-AM ELM-1882-UYWB 19-223SURSYGC/S530-A3/E3/TR8 l289 itr8102 w27 smd transistor
    Text: Everlight Electronics was established in 1983 and plays a critical role in the history of Taiwan’s LED industry. It has become the leader in the Taiwan LED packaging industry. Although facing competition from numerous worldwide Optoelectronic suppliers, Everlight


    Original     		PDF CT1003Q43-V2 HIR26-21C w32 smd transistor w32 smd transistor 143 17-21SYGC/S530-E2/TR8 3A-01-B74-Y9C-A1S1T1DH-AM ELM-1882-UYWB 19-223SURSYGC/S530-A3/E3/TR8 l289 itr8102 w27 smd transistor

    omron 8567

    Abstract: crouzet 88 810.1 AQH2223 equivalent OMRON 1230 opto 12VDC sf 249 crouzet 88 810.0 Automation Controls panasonic - elevator door controller manual seiko lcd m3214 crouzet 88 810.0 coto reed relay 2063
    Text: ELECTROMECHANICAL Switches Basic / Snap Switches Cherry Electrical Products . . . . . . . . . . 1819, 1820, 1821 Mountain Switch . . . . . . . . . . Available at mouser.com Honeywell . . . . . . . . . . . . . . . . . . 1822, 1823, 1824 Omron . . . . . . . . . . . . . 1825, 1826, 1827, 1829, 1830


    Original     		PDF

    Untitled

    Abstract: No abstract text available
    Text: I/M-IITE /M IC R O ELEC T R O N IC S WE512K8, WE256K8, WE128K8-XCX 512Kx8 CMOS EEPROM, WE512K8-XCX, SMD 5962-93091 512Kx8 BIT CMOS EEPROM MODULE FEATURES FIG. 1 P IN C O N F IG U R A T IO N T O P V IE W L 1 A16 r 2 A15 [7 3 32 A12 4 29 A7C 5 A6 [T 6 A5 E 7


    OCR Scan     		PDF WE512K8, WE256K8, WE128K8-XCX 512Kx8 WE512K8-XCX, 150nS, 200nS, 250nS, 300nS

    smd transistor marking A13C

    Abstract: smd transistor A6t 12 smd transistor A6t A6T TRANSISTOR A6t smd a6t smd transistor smd transistor wc smd transistor A6t 50 C17E smd transistor wc dc
    Text: MICRON TECHNOLOGY INC 17E J> • blllSMT 0001ÖS2 5 MICRON MT5C6404 883C MILITARY SRAM 16K X 4 SRAM 'T - M W - Z V i o AVAILABLE AS MILITARY SPECIFICATIONS PIN ASSIGNMENT Top View • SMD 5962-86859, -89629 • JAN (consult factory for reference number)


    OCR Scan     		PDF MT5C6404 22L/300 MIL-STD-883 smd transistor marking A13C smd transistor A6t 12 smd transistor A6t A6T TRANSISTOR A6t smd a6t smd transistor smd transistor wc smd transistor A6t 50 C17E smd transistor wc dc

    Untitled

    Abstract: No abstract text available
    Text: WME128K8-XXX WHITE /MICROELECTRONICS 128Kx8 CMOS MONOLITHIC EEPROM, SMD 5962-96796 FEATURES FIG. 1 • Read Access Tim es of 140,150, 200, 250, 300nS PIN CONFIGURATION ■ JEDEC Approved Packages 32 DIP 32 C S O J • 32 pin, Hermetic Ceramic, 0.600" DIP Package 300


    OCR Scan     		PDF WME128K8-XXX 128Kx8 300nS MIL-STD-883 Cycl250nS 128Kx 200nS 03HYX 150nS

    SMD A7c

    Abstract: No abstract text available
    Text: WHITE M IC R O E L E C T R O N IC S W S128K8-XCX 128Kx8 SRAM MODULE, SMD 5962 93156 FEATURES FIG. 1 PIN CONFIGURATION TOP VIEW NCC 1 A16C 2 A14C 3 A12C 4 A7C 5 E W 32 El Vcc 30 □ NC 29 □ w i 28 El A13 D A8 27 A3 C 9 24 E O E A2 C 10 A 1 C 11 23 A O C 12


    OCR Scan     		PDF 128Kx8 S128K8-XCX 120ns 100ns 01HXX 02HXX 03HXX 04HXX 05HXX SMD A7c

    smd transistor A6t

    Abstract: A4U marking transistor A6t smd Transistor A6T TRANSISTOR smd transistor A4U smd transistor A6t 14 SMD TRANSISTOR MARKING A1 T46 smd transistor A6t 50 transistor A6t 45 smd transistor marking a7*c
    Text: 1?E D MICRON TECHNOLOGY INC b l l l S 1^ MICRON « OOOiaiH b MT5C6401 883C HlhN-XCV'.V ISC MILITARY SRAM 64Kx1 SRAM -OS AVAILABLE AS MILITARY SPECIFICATIONS PIN ASSIGNMENT Top View • SMD 5962-86105 • JAN M38510/292 « RAD-tolerance (consult factory)


    OCR Scan     		PDF MT5C6401 M38510/292 64Kx1 22L/300 T-46-23-r05 MIL-STD-883 smd transistor A6t A4U marking transistor A6t smd Transistor A6T TRANSISTOR smd transistor A4U smd transistor A6t 14 SMD TRANSISTOR MARKING A1 T46 smd transistor A6t 50 transistor A6t 45 smd transistor marking a7*c

    Untitled

    Abstract: No abstract text available
    Text: WS256K8-XCX M/HITE / M I C R O E L E C T R O N I C S 256Kx8 SRAM MODULE, SMD 5962-93157 FEATURES FIG. 1 PIN CONFIGURATION TOP VIEW NC C 1 32 D V cc A16 C 2 31 □ A 15 A14 C 3 30 □ A 1 7 A12C 4 29 H W E A7C 5 2 8 □ A 13 A6 C 6 27 H AS C 7 26 □ A 9 as


    OCR Scan     		PDF WS256K8-XCX 256Kx8 120ns MIL-STD-883 100ns 01HXX 02HXX 03HXX 04HXX

    Untitled

    Abstract: No abstract text available
    Text: TT W S512K8-XCX 1/1/HITE / M I C R O E L E C T R O N I C S 512Kx8 SRAM MODULE, SMD 5962-92078 FEATURES FIG. 1 PIN CONFIGURATION TOP VIEW A18 C 1 A 1 6C 2 ^ 32 31 30 □ A17 A I2 C 4 A7C 5 29 □ WË A6 C 6 27 □ A8 A5 C 7 26 □ A9 3 A ccess Tim es 55, 70, 8 5 , 1 0 0 , 120ns


    OCR Scan     		PDF S512K8-XCX 512Kx8 120ns MIL-STD-883 01HXX 02HXX 03HXX 04HXX 05HXX

    Untitled

    Abstract: No abstract text available
    Text: WS57C128FB MILITARY HIGH SPEED 16Kx 8 CMOS EPROM KEY FEATURES • EPI Processing • Ultra-Fast Access Time — Latch-up Immunity Up to 200 mA — 45 ns • Standard EPROM Pinout • DIP and Surface Mount Packaging Available • Low Power Consumption • DESC SMD No. 5962-87661


    OCR Scan     		PDF WS57C128FB WS57C128FB MIL-STD-883C MIL-STD-883C WS57C128FB-45DMB WS57C128FB-55CMB

    Untitled

    Abstract: No abstract text available
    Text: G2 WME128K8-XXX M/HITE /MICROELECTRONICS 128Kx8 CMOS MONOLITHIC EEPROM, SMD 5962-96796 FEATURES FIG. 1 • Read Access Tim es of 140,150, 200, 250, 300ns PIN C O N FIG U R A T IO N ■ JEDEC Approved Packages 32 DIP 32 CSOJ • 32 pin, Herm etic Ceramic, 0.600" DIP Package 300


    OCR Scan     		PDF WME128K8-XXX 128Kx8 300ns 200ns 150ns 140ns 01HXX 250ns 02HXX

    27c256l

    Abstract: No abstract text available
    Text: WS27C256L Military 32K x 8 CMOS EPROM KEY FEATURES • Ceramic Leadless Chip Carrier CLLCC • High Performance CMOS — 120 ns A ccess Tim e • EPI Processing * Fast Programming — Latch-U p Im m unity to 200 m A * DESC SMD No. 5962-86063 — ESD Protection E xceeds 2000 Volts


    OCR Scan     		PDF WS27C256L -883C -883C 256L-15T 256L-20D WS27C256L. 27c256l

    Untitled

    Abstract: No abstract text available
    Text: HHITE /M ICRO ELECTRONICS W MF128K8-XXX5 128Kx8 MONOLITHIC FLASH, SMD 5962-96690 FEATURES • Access Tim es of 60, 70, 9 0 ,1 2 0 ,150ns ■ Organized as 128Kx8 ■ Packaging ■ Commercial, Industrial and M ilita ry Tem perature Ranges • 32 lead, Hermetic Ceramic, 0.400" S O J Package 101


    OCR Scan     		PDF MF128K8-XXX5 128Kx8 150ns 128Kx8 16KByte 04HXX 05HXX

    256Kx8bit

    Abstract: No abstract text available
    Text: M4HITE / M IC R O E L E C T R O N IC S WE512K8, WE256K8, WE128K8-XCX 512Kx8 CMOS EEPROM, WE512K8-XCX, SMD 5962-93091 512Kx8 BIT CMOS EEPROM MODULE FEATURES FIG. 1 A18C 1 • Read Access Times of 150, 200, 250, 300ns ■ JEDEC Standard 32 Pin, Hermetic Ceramic DIP Package 300


    OCR Scan     		PDF WE512K8, WE256K8, WE128K8-XCX 512Kx8 WE512K8-XCX, 300ns MIL-STD-883 Re128Kx8 512Kx 256Kx8bit

    Untitled

    Abstract: No abstract text available
    Text: 77 WHITE /M IC R O ELEC T R O N IC S WMF512K8-XXX5 512Kx8 MONOLITHIC FLASH, SMD 5962-96692 FEATURES • Access Times of 70, 9 0 ,1 2 0 ,1 50ns ■ Organized as 512Kx8 ■ Packaging • 32 pin, Hermetic Ceramic, 0.600" DIP Package 300 • 32 lead, Hermetic Ceramic, 0.400" SOJ (Package 101)


    OCR Scan     		PDF WMF512K8-XXX5 512Kx8 512Kx8 512Kx 64KByte 120ns 02HYX 03HYX 04HYX

    256k x 8 SRAM

    Abstract: SRAM 8T 256K x 8 SRAM dip
    Text: WHITE /MICROELECTRONICS □ WS256K8-XCX 256Kx8 SRAM MODULE, SMD 5962-93157 FEATURES FIG. 1 • A ccess Times 20, 25, 35, 45ns PIN CONFIGURATION TOP VIEW W 32 31 30 29 28 27 26 25 24 23 22 21 20 19 18 17 U □ □ □ H □ □ □ Vcc A15 A17 w i A13 A8 A9


    OCR Scan     		PDF WS256K8-XCX 256Kx8 IL-STD-883 06HXX 07HXX 08HXX 256k x 8 SRAM SRAM 8T 256K x 8 SRAM dip

    27s35a

    Abstract: 82hs189 27S35
    Text: ^D jSTRJB^nO N^TAT^W EN ^^ Approved for public release; distribution is unlimited. DESC FORM 193 MAY 86 SMD Drawing Number 5962-86706 Generic Part Number 27S35/37 4-213 i l AMD 1. SCOPE 1-1 Scope. This drawing describes device requirements f o r c la s s B m ic ro c irc u its In accordance w ith


    OCR Scan     		PDF 27S35/37 MIL-STD-883, MIL-STD-883 MIL-M-38510 27s35a 82hs189 27S35

    Untitled

    Abstract: No abstract text available
    Text: M/HITE M IC R O ELE C TR O N IC S WMF128K8-XXX5 128Kx8 MONOLITHIC FLASH, SMD 5962-96690 PRELIMINARY* FEATURES • Access Times o f 60, 70, 90, 120 and 150nS ■ 5 V o lt P rogram m ing. 5V ± 10% Supply. ■ Packaging ■ Low Pow er CMOS • 3 2 lead. H erm etic Ceramic, 0.400" SOJ Package 101


    OCR Scan     		PDF WMF128K8-XXX5 128Kx8 150nS 16KBytes 16KByte 120nS 01HXX* 02HXX*

    Untitled

    Abstract: No abstract text available
    Text: T T WHITE M IC R O E LE C T R O N IC S WE512K8, WE256K8, WE128K8-XCX 512Kx8 CMOS EEPROM, WE512K8-XCX, SMD 5962-93091 512Kx8 BIT CMOS EEPROM MODULE FEATURES FIG. 1 PIN CONFIGURATION TOP VIEW A ieC A 16 C A 15 Ü A 12 C A7 C A6 C A5 Ü A4 C A3 C A2 C 1 2 3 4


    OCR Scan     		PDF WE512K8, WE256K8, WE128K8-XCX 512Kx8 WE512K8-XCX, 150nS, 200nS, 250nS, 300nS

    Untitled

    Abstract: No abstract text available
    Text: WHITE M I C R O E L E C T R O N I C S WE512K8, WE256K8, WE128K8-XCX 512Kx8 CMOS EEPROM, WE512K8-XCX, SMD 5962-93091 512Kx8 BIT CM OS EEPROM MODULE FEATURES FIG. 1 PIN C O N F IG U R A T IO N T O P V IE W 32 □ V . 31 □ WE 30 □ A17 A18C 1 A16C 2 A15C 3


    OCR Scan     		PDF WE512K8, WE256K8, WE128K8-XCX 512Kx8 WE512K8-XCX, 300nS MIL-STD-883 Typical/100mA 512Kx

    Untitled

    Abstract: No abstract text available
    Text: ca I/I/HITE / M I C R O E L E C T R O N I C S WMS128K8-XXX 128Kx8 MONOLITHIC SRAM. SMD 5962-96691 pending FEATURES A c c e s s Tim es 17, 20, 25, 35, 45, 55n s M IL -S T D -8 8 3 C om pliant D e vic e s A va ilab le Radiation Tolerant D e vice s A va ilab le


    OCR Scan     		PDF WMS128K8-XXX 128Kx8 05HZX* 06HZX* 07HZX* 08HZX* 09HZX* 10HZX* 128KX 05HXX*

    i05 SMD

    Abstract: onolithic
    Text: T T WMS128K8-XXX I/I/HITE / M I C R O E L E C T R O N I C S 128Kx8 MONOLITHIC SRAM, SMD 5962-96691 pending PRELIMINARY * FEATURES • Access Tim es 17, 20, 25, 35, 45, 55nS M IL-S TD -883 C om p liant Devices A va ila b le ■ R adiation T o le ra n t Devices A va ila b le


    OCR Scan     		PDF WMS128K8-XXX 128Kx8 05HZX* 07HZX* 08HZX* 09HZX* 10HZX* 128KX 05HXX* 07HXX* i05 SMD onolithic

    UA15

    Abstract: No abstract text available
    Text: WHITE /M IC R O E L E C T R O N IC S W S512K8-XCX 512Kx8 SRAM MODULE, SMD 5962-92078 FEATURES FIG. 1 PIN CONFIGURATION TOP VIEW ^ 32 31 30 29 28 27 26 25 24 D Vcc ÜA15 J A17 HWË H A13 H A8 H A9 U A11 Access Tim es 20, 25, 35, 45ns • S tandard M ic ro c irc u it D raw ing , 5962-92078


    OCR Scan     		PDF S512K8-XCX 512Kx8 I/02C MIL-STD-883 06HTX 07HTX 08HTX 09HTX UA15

    256K x 8 SRAM dip

    Abstract: No abstract text available
    Text: WS256K8-XCX I/I/HITE /M ICRO ELECTRO N IC S 256Kx8 SRAM MODULE FEATURES FIG. 1 PIN CONFIGURATION TOP VIEW NCC 1 W 32 ^ Vcc □ A15 A16C 2 31 A14C 3 A12C 4 30 □ A 1 7 29 □ W E A7C 5 28 A6 C 6 A5 C 7 27 H8 25 A4 □ A13 □ A8 26 □ A9 Standard Microcircuit Drawing, 5962-93157


    OCR Scan     		PDF WS256K8-XCX 256Kx8 120ns MIL-STD-883 100ns 01HXX 02HXX 03HXX 256K x 8 SRAM dip