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    SIT TRANSISTOR Search Results

    SIT TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    2SC6026MFV Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=50 V / IC=0.15 A / hFE=120~400 / VCE(sat)=0.25 V / SOT-723 Visit Toshiba Electronic Devices & Storage Corporation
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=50 V / IC=5 A / hFE=400~1000 / VCE(sat)=0.22 V / tf=120 ns / New PW-Mold Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / VCEO=-50 V / IC=-5 A / hFE=200~500 / VCE(sat)=-0.27 V / tf=60 ns / New PW-Mold Visit Toshiba Electronic Devices & Storage Corporation
    TTC022 Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=12 V / IC=5 A / hFE=250~500 / VCE(sat)=0.14 V / tf=50 ns / PW-Mini Visit Toshiba Electronic Devices & Storage Corporation
    TTC020 Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=80 V / IC=4 A / hFE=100~200 / VCE(sat)=0.17 V / tf=70 ns / PW-Mini Visit Toshiba Electronic Devices & Storage Corporation

    SIT TRANSISTOR Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    0150SC-1250M

    Abstract: No abstract text available
    Text: 0150SC-1250M Rev B 0150SC-1250M 1250Watts, 125 Volts, Class AB 150 to 160 MHz Silicon Carbide SIT PRELIMINARY SPECIFICATION GENERAL DESCRIPTION The 0150SC-1250M is a Common Gate N-Channel Class AB SILICON CARBIDE STATIC INDUCTION TRANSISTOR SIT capable of


    Original     		0150SC-1250M 0150SC-1250M 1250Watts, 500mA, PDF

    electrolytic capacitor, .1uF

    Abstract: z1071 "Static Induction Transistor" "silicon carbide" FET atc100b sit transistor SIT Static Induction Transistor electrolytic capacitor, 1uF 1000uf capacitor 0150SC-1250M
    Text: 0150SC-1250M Rev B 0150SC-1250M 1250Watts, 125 Volts, Class AB 150 to 160 MHz Silicon Carbide SIT PRELIMINARY SPECIFICATION GENERAL DESCRIPTION The 0150SC-1250M is a Common Gate N-Channel Class AB SILICON CARBIDE STATIC INDUCTION TRANSISTOR SIT capable of


    Original     		0150SC-1250M 0150SC-1250M 1250Watts, 500mA, electrolytic capacitor, .1uF z1071 "Static Induction Transistor" "silicon carbide" FET atc100b sit transistor SIT Static Induction Transistor electrolytic capacitor, 1uF 1000uf capacitor PDF

    electrolytic capacitor, .1uF

    Abstract: silicon carbide electrolytic capacitor, 1uF Static Induction Transistor SIT Static Induction Transistor ATC capacitor 56pf
    Text: 0150SC-1250M Rev A 0150SC-1250M 1250Watts, 125 Volts, Class AB 150 to 160 MHz Silicon Carbide SIT PRELIMINARY SPECIFICATION GENERAL DESCRIPTION The 0150SC-1250M is a Common Gate N-Channel Class AB SILICON CARBIDE STATIC INDUCTION TRANSISTOR SIT capable of


    Original     		0150SC-1250M 0150SC-1250M 1250Watts, 500mA, electrolytic capacitor, .1uF silicon carbide electrolytic capacitor, 1uF Static Induction Transistor SIT Static Induction Transistor ATC capacitor 56pf PDF

    Untitled

    Abstract: No abstract text available
    Text: 0405SC-1000M Rev F 0405SC-1000M 1000Watts, 125 Volts, Class AB 406 to 450 MHz Silicon Carbide SIT PRELIMINARY SPECIFICATION CASE OUTLINE 55ST FET Common Gate GENERAL DESCRIPTION The 0405SC-1000M is a Common Gate N-Channel Class AB SILICON CARBIDE STATIC INDUCTION TRANSISTOR (SIT) capable of


    Original     		0405SC-1000M 0405SC-1000M 1000Watts, 150mA 300uS, PDF

    J294

    Abstract: SIT Static Induction Transistor sit transistor Static Induction Transistor SIT electrolytic capacitor, .1uF 2.t transistor j294 "Static Induction Transistor" transistor sit "silicon carbide" FET transistor 1000W
    Text: 0405SC-1000M Rev F 0405SC-1000M 1000Watts, 125 Volts, Class AB 406 to 450 MHz Silicon Carbide SIT PRELIMINARY SPECIFICATION GENERAL DESCRIPTION CASE OUTLINE 55ST FET Common Gate The 0405SC-1000M is a Common Gate N-Channel Class AB SILICON CARBIDE STATIC INDUCTION TRANSISTOR (SIT) capable of


    Original     		0405SC-1000M 0405SC-1000M 1000Watts, 150mA 300uS, J294 SIT Static Induction Transistor sit transistor Static Induction Transistor SIT electrolytic capacitor, .1uF 2.t transistor j294 "Static Induction Transistor" transistor sit "silicon carbide" FET transistor 1000W PDF

    4804B

    Abstract: sit 4804 tv image tube TRANSISTOR MOTOROLA sit transistor tv camera tubes 4804A TC1030 MRD photo detector transistor sit sit tube
    Text: Return To Product Page 4804/HPS1 Series Camera Tubes 16-millimeter SIT Camera Tube With Integral Power Supply • No External High Voltage Required • Low Input Voltage, Programmable The 4804/HPS1 Series types are sturdy, compact, 16millimeter Silicon-Intensifier Target SIT camera


    Original     		4804/HPS1 16-millimeter 16millimeter 4804B/HPS1 804A/HPS1) 4804l/HPS1) 4804/HPS1) 4804B sit 4804 tv image tube TRANSISTOR MOTOROLA sit transistor tv camera tubes 4804A TC1030 MRD photo detector transistor sit sit tube PDF

    Untitled

    Abstract: No abstract text available
    Text: 0405SC-2200M Rev A1 0405SC-2200M 2200Watts, 125 Volts, Class AB 406 to 450 MHz Silicon Carbide SIT PRELIMINARY SPECIFICATION CASE OUTLINE 55TW-FET Common Gate GENERAL DESCRIPTION The 0405SC-2200M is a Common Gate N-Channel DEPLETION MODE Class AB SILICON CARBIDE (SiC) STATIC INDUCTION


    Original     		0405SC-2200M 0405SC-2200M 2200Watts, 55TW-FET 120mA PDF

    static induction transistor SIT

    Abstract: "silicon carbide" FET 1000uf electrolytic capacitor SIT Static Induction Transistor transistor 406 specification sit transistor 0405SC-1000M "Static Induction Transistor" x2404 1000UF 20V CAPACITOR
    Text: 0405SC-1000M Rev C 0405SC-1000M 1000Watts, 125 Volts, Class AB 406 to 450 MHz Silicon Carbide SIT PRELIMINARY SPECIFICATION GENERAL DESCRIPTION CASE OUTLINE 55KT FET Common Gate 1 = Drain 2 = Gate 3 = Source The 0405SC-1000M is a Common Gate N-Channel Class AB SILICON


    Original     		0405SC-1000M 0405SC-1000M 1000Watts, static induction transistor SIT "silicon carbide" FET 1000uf electrolytic capacitor SIT Static Induction Transistor transistor 406 specification sit transistor "Static Induction Transistor" x2404 1000UF 20V CAPACITOR PDF

    electrolytic capacitor, .1uF

    Abstract: electrolytic capacitor, 1uF SIT Static Induction Transistor capacitor 330pF ATC "silicon carbide" FET CHIP transistor 348 Static Induction Transistor SIT "Static Induction Transistor" 425-450MHz static induction transistor
    Text: 0405SC-2200M Rev A1 0405SC-2200M 2200Watts, 125 Volts, Class AB 406 to 450 MHz Silicon Carbide SIT PRELIMINARY SPECIFICATION GENERAL DESCRIPTION CASE OUTLINE 55TW-FET Common Gate The 0405SC-2200M is a Common Gate N-Channel DEPLETION MODE Class AB SILICON CARBIDE (SiC) STATIC INDUCTION


    Original     		0405SC-2200M 0405SC-2200M 2200Watts, 55TW-FET 120mA electrolytic capacitor, .1uF electrolytic capacitor, 1uF SIT Static Induction Transistor capacitor 330pF ATC "silicon carbide" FET CHIP transistor 348 Static Induction Transistor SIT "Static Induction Transistor" 425-450MHz static induction transistor PDF

    SIT Static Induction Transistor

    Abstract: transistor 406 specification Static Induction Transistor SIT transistor sit "silicon carbide" FET static induction transistor "static induction transistor" sit transistor electrolytic capacitor, .1uF 0405SC-1500M
    Text: 0405SC-1500M Rev B 0405SC-1500M 1500Watts, 125 Volts, Class AB 406 to 450 MHz Silicon Carbide SIT PRELIMINARY SPECIFICATION GENERAL DESCRIPTION CASE OUTLINE 55ST FET Common Gate The 0405SC-1500M is a Common Gate N-Channel DEPLETION MODE Class AB SILICON CARBIDE (SiC) STATIC INDUCTION


    Original     		0405SC-1500M 0405SC-1500M 1500Watts, 125mA SIT Static Induction Transistor transistor 406 specification Static Induction Transistor SIT transistor sit "silicon carbide" FET static induction transistor "static induction transistor" sit transistor electrolytic capacitor, .1uF PDF

    1000uf electrolytic capacitor

    Abstract: capacitor 60 pF silicon carbide 33 J 250 capacitor Static Induction Transistor SIT "Static Induction Transistor" transistor 406 specification j130 fet
    Text: 0405SC-1000M Rev A 0405SC-1000M 1000Watts, 125 Volts, Class AB 406 to 450 MHz Silicon Carbide SIT PRELIMINARY SPECIFICATION GENERAL DESCRIPTION CASE OUTLINE 55KT FET Common Gate 1 = Drain 2 = Gate 3 = Source The 0405SC-1000M is a Common Gate N-Channel Class AB SILICON


    Original     		0405SC-1000M 0405SC-1000M 1000Watts, 1000uf electrolytic capacitor capacitor 60 pF silicon carbide 33 J 250 capacitor Static Induction Transistor SIT "Static Induction Transistor" transistor 406 specification j130 fet PDF

    Untitled

    Abstract: No abstract text available
    Text: 0405SC-1500M Rev B 0405SC-1500M 1500Watts, 125 Volts, Class AB 406 to 450 MHz Silicon Carbide SIT PRELIMINARY SPECIFICATION CASE OUTLINE 55ST FET Common Gate GENERAL DESCRIPTION The 0405SC-1500M is a Common Gate N-Channel DEPLETION MODE Class AB SILICON CARBIDE (SiC) STATIC INDUCTION


    Original     		0405SC-1500M 0405SC-1500M 1500Watts, 125mA PDF

    j130 fet

    Abstract: 33 J 250 capacitor transistor 1000W 1000uf electrolytic capacitor silicon carbide xl33 transistor 406 specification
    Text: 0405SC-1000M Rev B 0405SC-1000M 1000Watts, 125 Volts, Class AB 406 to 450 MHz Silicon Carbide SIT PRELIMINARY SPECIFICATION GENERAL DESCRIPTION CASE OUTLINE 55KT FET Common Gate 1 = Drain 2 = Gate 3 = Source The 0405SC-1000M is a Common Gate N-Channel Class AB SILICON


    Original     		0405SC-1000M 0405SC-1000M 1000Watts, j130 fet 33 J 250 capacitor transistor 1000W 1000uf electrolytic capacitor silicon carbide xl33 transistor 406 specification PDF

    BG2E

    Abstract: VLA502 VLA500-01 DC regulator with IGBT simple circuit switching block diagram NEC ps2501 igbt short circuit protection schematic diagram B37979-EPCOS BG2A IGBT DRIVER SCHEMATIC
    Text: Application First Release: March 23, 2010 NOTES: BG2E – Universal Gate Drive Prototype Board Description: BG2E is a fully isolated two channel gate drive circuit designed for use with dual NX-L series IGBT modules, designed to sit directly on top of a dual NX-L series IGBT module, allowing a simple mounting process.


    Original     		VLA500-01 2500VRMS VLA50001 BG2E VLA502 DC regulator with IGBT simple circuit switching block diagram NEC ps2501 igbt short circuit protection schematic diagram B37979-EPCOS BG2A IGBT DRIVER SCHEMATIC PDF

    SIT Static Induction Transistor

    Abstract: 2SK180 thf-51 tokin sit transistor 2SK182E PLL for induction heating sit transistor 2SK183VE 2SK183 2SK182
    Text: Another Tokin exclusive. Static Induction Ibansisiors SIT Static Induction Transistor w as in v e n te d by Professor Jun-ichi N ishizawa of Tohoku U niversity in 1950. After several s u b s e q u e n t technological d e v e lo p ­ m e n ts a n d im p ro v e m e n ts, it w a s first utilized in 1979 as a n industrial p o w e r SIT.


    OCR Scan     		2-26A L-03E SIT Static Induction Transistor 2SK180 thf-51 tokin sit transistor 2SK182E PLL for induction heating sit transistor 2SK183VE 2SK183 2SK182 PDF

    SIT Static Induction Transistor

    Abstract: Static Induction Transistor Static Induction Transistor SIT "static induction transistor"
    Text: AQV234 PhotoMOS RELAYS HS High Sensitivity Type 1-Channel (Forni A) Type UL File No.: E43149 CSA File No.: LR26550 FEATURES 1. High sensitivity type LED operate current: typical 0.31 mA 2. Power MOSFET incorporating SIT (Static Induction Transistor) allows control


    OCR Scan     		AQV234 E43149 LR26550 SIT Static Induction Transistor Static Induction Transistor Static Induction Transistor SIT "static induction transistor" PDF

    SIT Static Induction Transistor

    Abstract: sit transistor "static induction transistor" tokin sit transistor tokin Static Induction Transistor SIT transistor sit static induction transistor STATIC INDUCTION tokin TC-30
    Text: NEW PRODUCTS UPDATE T O K lii Small-sized Static Induction Transistor SIT with high withstand voltage 'T - S I - i', led. Outline This device is a static induction transistor especially suited for applications which require high-speed switching and a high


    OCR Scan     		200ns) 35max. TC-20 TC-30 E08-875-1479 2-26A UD-04E N920920P1 SIT Static Induction Transistor sit transistor "static induction transistor" tokin sit transistor tokin Static Induction Transistor SIT transistor sit static induction transistor STATIC INDUCTION tokin TC-30 PDF

    Untitled

    Abstract: No abstract text available
    Text: i i N AUER PHILIPS/DISCRETE fc.SE D bt,S3S31 DDSflOSS SIT • APX MPSA92 MPSA93 HIGH VOLTAGE SILICON PLANAR TRANSISTORS P-N-P high voltage silicon planar transistors in plastic TO-92 envelope fo r general purpose applications. Q U IC K R EFER EN C E D A T A


    OCR Scan     		S3S31 MPSA92 MPSA93 PDF

    mpsa92

    Abstract: MPSA93
    Text: II N AMER PHI LIPS/DISCRETE bSE D • bt>53^31 0D2ÖD25 SIT H A P X MPSA92 MPSA93 J HIGH VOLTAGE SILICON PLANAR TRANSISTORS P-N-P high voltage silicon planar transistors in plastic TO-92 envelope fo r general purpose applications. Q UICK REFERENCE D A T A


    OCR Scan     		MPSA92 MPSA93 NECC-C-00t-off MPSA93 PDF

    tokin sit transistor

    Abstract: SIT Static Induction Transistor 58AA Static Induction Transistor SIT tokin Tokin* SIT static induction transistor 9936 transistor SIT transistor transistor sit
    Text: TOKIN CORP NEW PRODUCTS UPDATE • 'iQbTbBb 0 0 0 1 0 5 1 1 4 1 ■ TOAI 54E D TQKIfl Small-sized Static Induction Transistor SIT with high withstand voltage 'T -S I -ii, led. Outline This device is a static induction transistor especially suited for applications which require high-speed switching and a high


    OCR Scan     		200ns) 35max. 2-26A UD-04E N920920P1 tokin sit transistor SIT Static Induction Transistor 58AA Static Induction Transistor SIT tokin Tokin* SIT static induction transistor 9936 transistor SIT transistor transistor sit PDF

    Untitled

    Abstract: No abstract text available
    Text: NEW ENGLAND SEMICONDUCTOR BIPOLAR NPN TRANSISTOR TO-39/TO-5 VcEO Ic sus (max) VOLTS AMPS hpE@i<yvCE ^CE(sit) PACKAGE DEVICE TYPE (min/max @ A/V) NPN TO-39 2N4150A 70 5.0 40-120@5/5 .6@5/,5 2N5010 500h .5 30-180@.025/10 2N5011 600h .5 2N5012 700h 2N5013 @ Ic/I b


    OCR Scan     		O-39/TO-5 2N4150A 2N5010 2N5011 2N5012 2N5013 2N5152 2N5154 2N5237A 2N5238A PDF

    Untitled

    Abstract: No abstract text available
    Text: sit d • oaibaoo ODSMObM mio b a n a ANALOG Dual Bipolar/JFET, Low Distortion DEVICES_ Operational Amplifier OP-275* I □ ANALOG DEVICES INC FEATURES "Sounds Good" Low Noise: 5 n V /V H z Low Distortion: 0.0006% High S lew Rate: 20 V /jiS W ide Bandwidth: 8 MHz


    OCR Scan     		OP-275* OP-275 AN-107. PDF

    VOLTAGE REGULATOR 7805 internal circuit

    Abstract: 7805 1A voltage regulator 7805 12v transistor L7805 ci 7805 TRANSISTOR 7805 MA 7805 ir 7805
    Text: ML 7805 V \ 5V /1 A PO SIT IV E VO LTAG E REGULATOR The M L 7 8 0 5 is a three-terminal positive voltage regulator for applications that require a regulated supply of 5 V and current in excess of 1A. This regulator features output short circuit protection, thermal shutdown


    OCR Scan     		O-220B L7805 33jUFi= 2N3789 33/lF VOLTAGE REGULATOR 7805 internal circuit 7805 1A voltage regulator 7805 12v transistor L7805 ci 7805 TRANSISTOR 7805 MA 7805 ir 7805 PDF

    2AM27

    Abstract: 27S02 amd am2 pin diagram am2 power CIRCUIT diagram
    Text: Page 0001 11/23/88 15:06:24 Tx: AM27S02 TED • Ft: AMD FMT twforiwtfcm S < r v ie> fc Inc. Am27S02/Am27S03 64-Sit Inverting-Output Bipolar RAM > a DISTINCTIVE CHARACTERISTICS Fully 16 w ord x 4-b it low -pow er S chottky RAMS Ultra-Fast Version; Address access time 25 ns


    OCR Scan     		AM27S02 Am27S02/Am27S03 64-Sit Am27S03 74S289, 74S189, 2AM27 27S02 amd am2 pin diagram am2 power CIRCUIT diagram PDF