SIS330DN Search Results
SIS330DN Price and Stock
Vishay Siliconix SIS330DN-T1-GE3MOSFET N-CH 30V 35A PPAK1212-8 |
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SIS330DN-T1-GE3 | Reel | 3,000 |
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Vishay Intertechnologies SIS330DN-T1-GE3 |
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Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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SIS330DN-T1-GE3 | 2,447 |
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SIS330DN-T1-GE3 | 1,957 |
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SIS330DN Datasheets (1)
Part | ECAD Model | Manufacturer | Description | Curated | Datasheet Type | |
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SIS330DN-T1-GE3 | Vishay Siliconix | FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 30V 35A 1212-8 | Original |
SIS330DN Datasheets Context Search
Catalog Datasheet | Type | Document Tags | |
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Contextual Info: New Product SiS330DN Vishay Siliconix N-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 RDS(on) () ID (A)f 0.0056 at VGS = 10 V 35g 0.0075 at VGS = 4.5 V 35g • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET |
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SiS330DN 2002/95/EC SiS330DN-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 | |
2894 spice
Abstract: sis330
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SiS330DN 18-Jul-08 2894 spice sis330 | |
sis330Contextual Info: New Product SiS330DN Vishay Siliconix N-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 RDS(on) () ID (A)f 0.0056 at VGS = 10 V 35g 0.0075 at VGS = 4.5 V 35g • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET |
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SiS330DN 2002/95/EC SiS330DN-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 sis330 | |
Contextual Info: New Product SiS330DN Vishay Siliconix N-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 RDS(on) () ID (A)f 0.0056 at VGS = 10 V 35g 0.0075 at VGS = 4.5 V 35g • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET |
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SiS330DN 2002/95/EC SiS330DN-T1-GE3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 | |
Contextual Info: SPICE Device Model SiS330DN www.vishay.com Vishay Siliconix N-Channel 30 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C |
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SiS330DN 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 | |
24426
Abstract: sis330
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SiS330DN AN609, 2477m 0412m 0384m 6738m 9857m 2690m 8629u 24426 sis330 | |
Contextual Info: New Product SiS330DN Vishay Siliconix N-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 RDS(on) () ID (A)f 0.0056 at VGS = 10 V 35g 0.0075 at VGS = 4.5 V 35g • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET |
Original |
SiS330DN 2002/95/EC SiS330DN-T1-GE3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 | |
sis330Contextual Info: New Product SiS330DN Vishay Siliconix N-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 RDS(on) () ID (A)f 0.0056 at VGS = 10 V 35g 0.0075 at VGS = 4.5 V 35g • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET |
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SiS330DN 2002/95/EC SiS330DN-T1-GE3 11-Mar-11 sis330 | |
si7121
Abstract: Si4914B SI-4102 SI4599 Si4483A sir166 irfd120 si7949 si4459a SIR836
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Mediu33-4-9337-2727 VMN-SG2127-1210 si7121 Si4914B SI-4102 SI4599 Si4483A sir166 irfd120 si7949 si4459a SIR836 |