Datasheet Archive: SIR836DP datasheets

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Vishay Siliconix SIR836DP-T1-GE3 MOSFET N-CH 40V 21A PPAK SO-8
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey ()	SIR836DP-T1-GE3	Cut Tape	3,000		1	1 $0.63 10 $0.499 100 $0.3835 1000 $0.32481 10000 $0.32481	Buy Now
	SIR836DP-T1-GE3	Reel	3,000		3,000	1 - 10 - 100 - 1000 - 10000 $0.2744	Buy Now
	SIR836DP-T1-GE3	Digi-Reel	3,000		1	1 $0.63 10 $0.499 100 $0.3835 1000 $0.32481 10000 $0.32481	Buy Now
New Advantage Corporation	SIR836DP-T1-GE3		6,000		1	1 - 10 - 100 - 1000 $0.3714 10000 $0.3467	Buy Now
Vishay Intertechnologies SIR836DP-T1-GE3 Power MOSFET, N Channel, 40 V, 21 A, 0.015 ohm, PowerPAK SO, Surface Mount - Tape and Reel (Alt: SIR836DP-T1-GE3)
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Avnet Americas	SIR836DP-T1-GE3	Reel	12,000	22 Weeks	3,000	1 - 10 - 100 - 1000 - 10000 $0.2625	Buy Now
Mouser Electronics	SIR836DP-T1-GE3		49,726			1 $0.61 10 $0.49 100 $0.378 1000 $0.311 10000 $0.272	Buy Now
Verical ()	SIR836DP-T1-GE3		13,994		22	1 - 10 - 100 $0.4578 1000 $0.4578 10000 $0.4578	Buy Now
	SIR836DP-T1-GE3		3,000		3,000	1 - 10 - 100 - 1000 - 10000 $0.4274	Buy Now
	SIR836DP-T1-GE3		3,000		3,000	1 - 10 - 100 - 1000 - 10000 $0.293	Buy Now
Arrow Electronics ()	SIR836DP-T1-GE3	Cut Strips	13,994	20 Weeks	1	1 $0.4578 10 $0.4578 100 $0.4578 1000 $0.4578 10000 $0.4578	Buy Now
	SIR836DP-T1-GE3		3,000	20 Weeks	3,000	1 - 10 - 100 - 1000 - 10000 $0.2942	Buy Now
Newark ()	SIR836DP-T1-GE3	Cut Tape	6,325		1	1 $0.673 10 $0.624 100 $0.562 1000 $0.562 10000 $0.562	Buy Now
	SIR836DP-T1-GE3	Reel			3,000	1 $0.37 10 $0.37 100 $0.37 1000 $0.37 10000 $0.334	Buy Now

TTI	SIR836DP-T1-GE3	Reel	24,000		3,000	1 - 10 - 100 - 1000 - 10000 $0.263	Buy Now
Avnet Asia	SIR836DP-T1-GE3			24 Weeks	3,000	1 - 10 - 100 - 1000 - 10000 -	Get Quote
EBV Elektronik	SIR836DP-T1-GE3			21 Weeks	3,000	1 - 10 - 100 - 1000 - 10000 -	Buy Now
Vyrian	SIR836DP-T1-GE3		19,948			1 - 10 - 100 - 1000 - 10000 -	Get Quote

SIR836DP Datasheets (1)

Part	ECAD Model	Manufacturer	Description	Curated	Datasheet Type	PDF
SIR836DP-T1-GE3		Vishay Siliconix	FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 40V 21A 8-SOIC		Original	PDF

SIR836DP Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
SIR836 Abstract: SiR836DP 65*543 65543 Contextual Info: New Product SiR836DP Vishay Siliconix N-Channel 40-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a, e 0.019 at VGS = 10 V 21 0.0225 at VGS = 4.5 V 19.6 VDS (V) 40 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET	Original	SiR836DP 2002/95/EC SiR836DP-T1-GE3 18-Jul-08 SIR836 65*543 65543	PDF
Contextual Info: New Product SiR836DP Vishay Siliconix N-Channel 40-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a, e 0.019 at VGS = 10 V 21 0.0225 at VGS = 4.5 V 19.6 VDS (V) 40 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET	Original	SiR836DP 2002/95/EC SiR836DP-T1-GE3 18-Jul-08	PDF
Contextual Info: SPICE Device Model SiR836DP www.vishay.com Vishay Siliconix N-Channel 40 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C	Original	SiR836DP 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12	PDF
SIR836 Abstract: 2429 AN609 SiR836DP 881979 Contextual Info: SiR836DP_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter configurations are included. When implemented in P-SPICE,	Original	SiR836DP AN609, 10-Nov-09 SIR836 2429 AN609 881979	PDF
Contextual Info: New Product SiR836DP Vishay Siliconix N-Channel 40-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a, e 0.019 at VGS = 10 V 21 0.0225 at VGS = 4.5 V 19.6 VDS (V) 40 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET	Original	SiR836DP 2002/95/EC SiR836DP-T1-GE3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12	PDF
Contextual Info: New Product SiR836DP Vishay Siliconix N-Channel 40-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a, e 0.019 at VGS = 10 V 21 0.0225 at VGS = 4.5 V 19.6 VDS (V) 40 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET	Original	SiR836DP 2002/95/EC SiR836DP-T1-GE3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12	PDF
Contextual Info: MAX17597 Evaluation Kit General Description The MAX17597 evaluation kit EV kit is a fully assembled and tested surface-mount circuit board to evaluate the MAX17597 peak-current-mode controller in a step-up (boost) configuration. The EV kit output is configured for	Original	MAX17597 600kHz, 600kHz	PDF
si7121 Abstract: Si4914B SI-4102 SI4599 Si4483A sir166 irfd120 si7949 si4459a SIR836 Contextual Info: V ishay I ntertechnology, I nc . MOSFETs - Comprehensive Power MOSFET Technology Range I INNOVAT AND TEC O L OGY Vishay Siliconix N HN Power mosfets O 19 62-2012 Low to High Voltage Power MOSFETs ChipFET P o w e r PA K ® P o l a r PA K ® P o w e r PA I R ®	Original	Mediu33-4-9337-2727 VMN-SG2127-1210 si7121 Si4914B SI-4102 SI4599 Si4483A sir166 irfd120 si7949 si4459a SIR836	PDF

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SIR836DP Datasheets (1)

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