SIR818DP Search Results

Contextual Info: New Product SiR818DP Vishay Siliconix N-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) () ID (A)a, g 0.0028 at VGS = 10 V 50g 0.0033 at VGS = 4.5 V 50g VDS (V) 30 Qg (Typ.) 30.5 nC APPLICATIONS PowerPAK SO-8 S 6.15 mm • Low-Side Switch for DC/DC Converters

Contextual Info: SPICE Device Model SiR818DP www.vishay.com Vishay Siliconix N-Channel 30 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C

Contextual Info: SiR818DP_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter configurations are included. When implemented in P-SPICE,

Contextual Info: SPICE Device Model SiR818DP Vishay Siliconix N-Channel 30 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C

Contextual Info: New Product SiR818DP Vishay Siliconix N-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) () ID (A)a, g 0.0028 at VGS = 10 V 50g 0.0033 at VGS = 4.5 V 50g VDS (V) 30 Qg (Typ.) 30.5 nC APPLICATIONS PowerPAK SO-8 S 6.15 mm • Low-Side Switch for DC/DC Converters

mosfet 50g

Abstract: PowerPAK
Contextual Info: New Product SiR818DP Vishay Siliconix N-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) () ID (A)a, g 0.0028 at VGS = 10 V 50g 0.0033 at VGS = 4.5 V 50g VDS (V) 30 Qg (Typ.) 30.5 nC APPLICATIONS PowerPAK SO-8 S 6.15 mm • Low-Side Switch for DC/DC Converters

Contextual Info: New Product SiR818DP Vishay Siliconix N-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) () ID (A)a, g 0.0028 at VGS = 10 V 50g 0.0033 at VGS = 4.5 V 50g VDS (V) 30 Qg (Typ.) 30.5 nC APPLICATIONS PowerPAK SO-8 S 6.15 mm • Low-Side Switch for DC/DC Converters

Contextual Info: New Product SiR818DP Vishay Siliconix N-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) () ID (A)a, g 0.0028 at VGS = 10 V 50g 0.0033 at VGS = 4.5 V 50g VDS (V) 30 Qg (Typ.) 30.5 nC APPLICATIONS PowerPAK SO-8 S 6.15 mm • Low-Side Switch for DC/DC Converters

Contextual Info: New Product SiR818DP Vishay Siliconix N-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) () ID (A)a, g 0.0028 at VGS = 10 V 50g 0.0033 at VGS = 4.5 V 50g VDS (V) 30 Qg (Typ.) 30.5 nC PowerPAK SO-8 • Halogen-free According to IEC 61249-2-21

Contextual Info: LTC4229 Ideal Diode and Hot Swap Controller Features Description Ideal Diode and Inrush Current Control for Redundant Supplies n Low Loss Replacement for Power Schottky Diode n Protects Output Voltage from Input Brownouts n Allows Safe Hot Swapping from a Live Backplane

Contextual Info: V i s h ay I n t e r t e c h n o l o g y, I n c . POWER MOSFETs MOSFETs – Ultra-Low RDS on with Next Generation Technology TrenchFET Gen IV New Breakthrough Technology Lowers On-Resistance Down to Just 0.00135 Ω at VGS = 4.5 V Key Benefits • Next-generation technology optimizes several key specifications:

si7121

Abstract: Si4914B SI-4102 SI4599 Si4483A sir166 irfd120 si7949 si4459a SIR836
Contextual Info: V ishay I ntertechnology, I nc . MOSFETs - Comprehensive Power MOSFET Technology Range I INNOVAT AND TEC O L OGY Vishay Siliconix N HN Power mosfets O 19 62-2012 Low to High Voltage Power MOSFETs ChipFET P o w e r PA K ® P o l a r PA K ® P o w e r PA I R ®

POWERPAK SO8

Abstract: SIS32
Contextual Info: V I S H AY I N T E R T E C H N O L O G Y, I N C . MOSFETs – Ultra-Low RDS on with Next Generation Technology AND TEC I INNOVAT O L OGY TrenchFET Gen IV N HN POWER MOSFETs O 19 62-2012 New Breakthrough Technology Lowers On-Resistance Down to Just 0.00135 Ω at VGS = 4.5 V

Contextual Info: xDSL ModemRouter Table of Contents DC/DC BUCK CONVERTER, DC/DC BUCK CONVERTER, Energy