SIR804DP Search Results
SIR804DP Price and Stock
Vishay Siliconix SIR804DP-T1-GE3MOSFET N-CH 100V 60A PPAK SO-8 |
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SIR804DP-T1-GE3 | Digi-Reel | 4,784 | 1 |
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SIR804DP-T1-GE3 | 6,000 | 1 |
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Vishay Intertechnologies SIR804DP-T1-GE3N-CHANNEL 100-V (D-S) MOSFET - Tape and Reel (Alt: SIR804DP-T1-GE3) |
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SIR804DP-T1-GE3 | Reel | 29 Weeks | 3,000 |
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SIR804DP-T1-GE3 | 16,056 |
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SIR804DP-T1-GE3 | 3,000 | 3,000 |
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SIR804DP-T1-GE3 | Cut Strips | 353 | 28 Weeks | 1 |
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SIR804DP-T1-GE3 | Cut Tape | 3,000 |
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SIR804DP-T1-GE3 | 1,146 |
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SIR804DP-T1-GE3 | Reel | 3,000 |
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SIR804DP-T1-GE3 | 3,000 |
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SIR804DP-T1-GE3 | 31 Weeks | 3,000 |
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SIR804DP-T1-GE3 | 29 Weeks | 3,000 |
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SIR804DP-T1-GE3 | 5,118 |
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Others SIR804DPT1GE3AVAILABLE EU |
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SIR804DPT1GE3 | 2,250 |
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Vishay Huntington SIR804DP-T1-GE3MOSFET N-CH 100V 60A PPAK SO-8 |
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Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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SIR804DP-T1-GE3 | 1,038 |
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SIR804DP Datasheets (1)
Part | ECAD Model | Manufacturer | Description | Curated | Datasheet Type | |
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SIR804DP-T1-GE3 | Vishay Siliconix | FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 100V 60A 8-SOIC | Original |
SIR804DP Datasheets Context Search
Catalog Datasheet | Type | Document Tags | |
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Contextual Info: SPICE Device Model SiR804DP www.vishay.com Vishay Siliconix N-Channel 100 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The subcircuit model is extracted and optimized over the -55 °C |
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SiR804DP 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 | |
SIR804DP
Abstract: sir804dp-t1-ge3
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SiR804DP 2002/95/EC SiR804DP-T1-GE3 18-Jul-08 | |
Contextual Info: New Product SiR804DP Vishay Siliconix N-Channel 100 V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) () ID (A)a 0.0072 at VGS = 10 V 60 0.0078 at VGS = 7.5 V 60 0.0103 at VGS = 4.5 V 60 VDS (V) 100 Qg (Typ.) 24.8 nC PowerPAK SO-8 • Halogen-free According to IEC 61249-2-21 |
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SiR804DP 2002/95/EC SiR804DP-T1-GE3 18-Jul-08 | |
Contextual Info: New Product SiR804DP Vishay Siliconix N-Channel 100 V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) () ID (A)a 0.0072 at VGS = 10 V 60 0.0078 at VGS = 7.5 V 60 0.0103 at VGS = 4.5 V 60 VDS (V) 100 Qg (Typ.) 24.8 nC PowerPAK SO-8 • Halogen-free According to IEC 61249-2-21 |
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SiR804DP 2002/95/EC SiR804DP-T1-GE3 11-Mar-11 | |
Contextual Info: New Product SiR804DP Vishay Siliconix N-Channel 100 V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) () ID (A)a 0.0072 at VGS = 10 V 60 0.0078 at VGS = 7.5 V 60 0.0103 at VGS = 4.5 V 60 VDS (V) 100 Qg (Typ.) 24.8 nC PowerPAK SO-8 • Halogen-free According to IEC 61249-2-21 |
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SiR804DP 2002/95/EC SiR804DP-T1-GE3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 | |
Contextual Info: New Product SiR804DP Vishay Siliconix N-Channel 100 V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) () ID (A)a 0.0072 at VGS = 10 V 60 0.0078 at VGS = 7.5 V 60 0.0103 at VGS = 4.5 V 60 VDS (V) 100 Qg (Typ.) 24.8 nC PowerPAK SO-8 • Halogen-free According to IEC 61249-2-21 |
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SiR804DP 2002/95/EC SiR804DP-T1-GE3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 | |
Contextual Info: New Product SiR804DP Vishay Siliconix N-Channel 100 V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) () ID (A)a 0.0072 at VGS = 10 V 60 0.0078 at VGS = 7.5 V 60 0.0103 at VGS = 4.5 V 60 VDS (V) 100 Qg (Typ.) 24.8 nC PowerPAK SO-8 • Halogen-free According to IEC 61249-2-21 |
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SiR804DP 2002/95/EC SiR804DP-T1-GE3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 | |
Contextual Info: New Product SiR804DP Vishay Siliconix N-Channel 100 V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) () ID (A)a 0.0072 at VGS = 10 V 60 0.0078 at VGS = 7.5 V 60 0.0103 at VGS = 4.5 V 60 VDS (V) 100 Qg (Typ.) 24.8 nC PowerPAK SO-8 • Halogen-free According to IEC 61249-2-21 |
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SiR804DP 2002/95/EC SiR804DP-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 | |
AN609Contextual Info: SiR804DP_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter configurations are included. When implemented in P-SPICE, |
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SiR804DP AN609, 29-Jan-10 AN609 | |
SIR804DPContextual Info: SPICE Device Model SiR804DP Vishay Siliconix N-Channel 100 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C |
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SiR804DP 18-Jul-08 | |
Contextual Info: New Product SiR804DP Vishay Siliconix N-Channel 100 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) ID (A)a RDS(on) () 100 0.0072 at VGS = 10 V 60 0.0078 at VGS = 7.5 V 60 0.0103 at VGS = 4.5 V 60 Qg (Typ.) 24.8 nC PowerPAK SO-8 • Halogen-free According to IEC 61249-2-21 |
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SiR804DP 2002/95/EC SiR804DP-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 | |
Contextual Info: MIC2176-1/-2/-3 Wide Input Voltage, Synchronous Buck Controllers Featuring Adaptive On-Time Control Hyper Speed Control Family General Description Features The Micrel MIC2176-1/-2/-3 is a family of constant-frequency, synchronous buck controllers featuring a unique digitally |
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MIC2176-1/-2/-3 MIC2176-1/-2/-3 MIC2176 100kHz, 200kHz, 300kHz. M9999-082610-A | |
60 SMD 5050 Ultra Bright LEDs
Abstract: MMA 0204 HV - Professional
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VMN-MS6495-1011 60 SMD 5050 Ultra Bright LEDs MMA 0204 HV - Professional | |
MIC2176
Abstract: npn TRANSISTOR SOT89 HCL1305-4R0-R 1uF 63V Ceramic Capacitor
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MIC2176-1/-2/-3 MIC2176-1/-2/-3 MIC2176 100kHz, 200kHz, 300kHz. M9999-111710-A MIC2176 npn TRANSISTOR SOT89 HCL1305-4R0-R 1uF 63V Ceramic Capacitor | |
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so8 footprint
Abstract: SIR876 si7454 si409 SiR872ADP sir878 SiS890DN si7252 si419
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SC-70 SC-75 Si7252DP VMN-PT0261-1209 so8 footprint SIR876 si7454 si409 SiR872ADP sir878 SiS890DN si7252 si419 | |
Contextual Info: V i s h ay I n t e r t e c h n o l o g y, I n c . Power MOSFETs MOSFETs - On-Resistance Ratings Down to VGS = 4.5 V 80 V to 150 V High-Performance 80 V to 150 V Power MOSFETs Key Benefits • New next-generation technology provides very low on-resistance and ultra-low figure of merit |
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SC-75 SiB456DK Si7252DP SiS990DN Si4590DY 1212-8S VMN-PT0261-1402 | |
si7121
Abstract: Si4914B SI-4102 SI4599 Si4483A sir166 irfd120 si7949 si4459a SIR836
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Mediu33-4-9337-2727 VMN-SG2127-1210 si7121 Si4914B SI-4102 SI4599 Si4483A sir166 irfd120 si7949 si4459a SIR836 |