SIR774DP Search Results

Contextual Info: SPICE Device Model SiR774DP www.vishay.com Vishay Siliconix N-Channel 30 V D-S MOSFET with Schottky Diode DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C

Contextual Info: New Product SiR774DP Vishay Siliconix N-Channel 30 V D-S MOSFET with Schottky Diode FEATURES PRODUCT SUMMARY RDS(on) (Ω) Max. ID (A)a 0.0026 at VGS = 10 V 40 0.0034 at VGS = 4.5 V 40 VDS (V) 30 Qg (Typ.) 28.5 nC PowerPAK SO-8 APPLICATIONS S 6.15 mm • VRM, POL, Server

Contextual Info: SiR774DP_RC www.vishay.com Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter

Contextual Info: New Product SiR774DP Vishay Siliconix N-Channel 30 V D-S MOSFET with Schottky Diode FEATURES PRODUCT SUMMARY RDS(on) (Ω) Max. ID (A)a 0.0026 at VGS = 10 V 40 0.0034 at VGS = 4.5 V 40 VDS (V) 30 Qg (Typ.) 28.5 nC PowerPAK SO-8 APPLICATIONS S 6.15 mm • VRM, POL, Server

Contextual Info: New Product SiR774DP Vishay Siliconix N-Channel 30 V D-S MOSFET with Schottky Diode FEATURES PRODUCT SUMMARY RDS(on) () Max. ID (A)a 0.0026 at VGS = 10 V 40 0.0034 at VGS = 4.5 V 40 VDS (V) 30 Qg (Typ.) 28.5 nC PowerPAK SO-8 APPLICATIONS S 6.15 mm • VRM, POL, Server

Contextual Info: New Product SiR774DP Vishay Siliconix N-Channel 30 V D-S MOSFET with Schottky Diode FEATURES PRODUCT SUMMARY RDS(on) (Ω) Max. ID (A)a 0.0026 at VGS = 10 V 40 0.0034 at VGS = 4.5 V 40 VDS (V) 30 Qg (Typ.) 28.5 nC PowerPAK SO-8 APPLICATIONS S 6.15 mm • VRM, POL, Server

Contextual Info: New Product SiR774DP Vishay Siliconix N-Channel 30 V D-S MOSFET with Schottky Diode FEATURES PRODUCT SUMMARY RDS(on) () Max. ID (A)a 0.0026 at VGS = 10 V 40 0.0034 at VGS = 4.5 V 40 VDS (V) 30 Qg (Typ.) 28.5 nC PowerPAK SO-8 APPLICATIONS S 6.15 mm • VRM, POL, Server

Contextual Info: V i s h ay I n t e r t e c h n o l o g y, I n c . Power MOSFETs MOSFETs - Save Space, Increase Performance SkyFET Integrated MOSFET and Schottky Diode Solution Key Benefits • • • • Increases efficiency for DC/DC converter applications Reduces space and solution cost by eliminating external Schottky diodes

si4776

Contextual Info: V I S H AY I N T E R T E C H N O L O G Y, I N C . MOSFETs - Save Space, Increase Performance AND TEC I INNOVAT O L OGY SkyFET N HN POWER MOSFETs O 19 62-2012 Integrated MOSFET and Schottky Diode Solution KEY BENEFITS • • • • Increases efficiency for DC/DC converter applications

si7121

Abstract: Si4914B SI-4102 SI4599 Si4483A sir166 irfd120 si7949 si4459a SIR836
Contextual Info: V ishay I ntertechnology, I nc . MOSFETs - Comprehensive Power MOSFET Technology Range I INNOVAT AND TEC O L OGY Vishay Siliconix N HN Power mosfets O 19 62-2012 Low to High Voltage Power MOSFETs ChipFET P o w e r PA K ® P o l a r PA K ® P o w e r PA I R ®