SIR698DP Search Results
SIR698DP Price and Stock
Vishay Siliconix SIR698DP-T1-GE3MOSFET N-CH 100V 7.5A PPAK SO-8 |
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SIR698DP-T1-GE3 | Digi-Reel | 351 | 1 |
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SIR698DP-T1-GE3 | 6,000 | 1 |
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Vishay Intertechnologies SIR698DP-T1-GE3Trans MOSFET N-CH 100V 3A 8-Pin PowerPAK SO T/R - Product that comes on tape, but is not reeled (Alt: 27AK1006) |
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SIR698DP-T1-GE3 | Ammo Pack | 10 Weeks, 3 Days | 1 |
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SIR698DP-T1-GE3 | 5,285 |
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SIR698DP-T1-GE3 | 3,705 | 113 |
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SIR698DP-T1-GE3 | Cut Tape | 3,705 | 1 |
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SIR698DP-T1-GE3 | Reel | 3,000 |
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SIR698DP-T1-GE3 | 3,000 |
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SIR698DP-T1-GE3 | 14 Weeks | 3,000 |
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Vishay Intertechnologies SIR698DPT1GE3Power Field-Effect Transistor, 7.5A I(D), 100V, 0.195ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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SIR698DPT1GE3 | 290 |
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SIR698DP Datasheets (1)
| Part | ECAD Model | Manufacturer | Description | Curated | Datasheet Type | |
|---|---|---|---|---|---|---|
| SIR698DP-T1-GE3 | Vishay Siliconix | FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 100V 7.5A POWERPAK | Original |
SIR698DP Datasheets Context Search
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Contextual Info: SiR698DP Vishay Siliconix N-Channel 100 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) ID (A)a RDS(on) (Ω) Max. 100 0.195 at VGS = 10 V 7.5 0.230 at VGS = 6 V 6.9 Qg (Typ.) 5.2 nC PowerPAK SO-8 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Power MOSFET |
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SiR698DP 2002/95/EC SiR698DP-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 | |
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Contextual Info: SiR698DP Vishay Siliconix N-Channel 100 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) ID (A)a RDS(on) (Ω) Max. 100 0.195 at VGS = 10 V 7.5 0.230 at VGS = 6 V 6.9 Qg (Typ.) 5.2 nC PowerPAK SO-8 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Power MOSFET |
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SiR698DP 2002/95/EC SiR698DP-T1-GE3 11-Mar-11 | |
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Contextual Info: SPICE Device Model SiR698DP www.vishay.com Vishay Siliconix N-Channel 100 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C |
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SiR698DP 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 | |
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Contextual Info: SiR698DP Vishay Siliconix N-Channel 100 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) ID (A)a RDS(on) (Ω) Max. 100 0.195 at VGS = 10 V 7.5 0.230 at VGS = 6 V 6.9 Qg (Typ.) 5.2 nC PowerPAK SO-8 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Power MOSFET |
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SiR698DP 2002/95/EC SiR698DP-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 | |
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Contextual Info: SiR698DP_RC www.vishay.com Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter |
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SiR698DP AN609, 9199u 5162m 2156m 0000m 4000m 5098u 0339m 1866u | |
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Contextual Info: SiR698DP Vishay Siliconix N-Channel 100 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) ID (A)a RDS(on) (Ω) Max. 100 0.195 at VGS = 10 V 7.5 0.230 at VGS = 6 V 6.9 Qg (Typ.) 5.2 nC PowerPAK SO-8 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Power MOSFET |
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SiR698DP 2002/95/EC SiR698DP-T1-GE3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 | |
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Contextual Info: SiR698DP Vishay Siliconix N-Channel 100 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) ID (A)a RDS(on) (Ω) Max. 100 0.195 at VGS = 10 V 7.5 0.230 at VGS = 6 V 6.9 Qg (Typ.) 5.2 nC PowerPAK SO-8 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Power MOSFET |
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SiR698DP 2002/95/EC SiR698DP-T1-GE3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 | |
DIODE 2524Contextual Info: SiR698DP Vishay Siliconix N-Channel 100 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) ID (A)a RDS(on) (Ω) Max. 100 0.195 at VGS = 10 V 7.5 0.230 at VGS = 6 V 6.9 Qg (Typ.) 5.2 nC PowerPAK SO-8 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Power MOSFET |
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SiR698DP 2002/95/EC SiR698DP-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 DIODE 2524 | |
SIR698DPContextual Info: SPICE Device Model SiR698DP www.vishay.com Vishay Siliconix N-Channel 100 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C |
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SiR698DP 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 | |
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Contextual Info: 85V Half Bridge MOSFET Drivers with 5.5V to 16V Gate Drive MIC4604 Evaluation Board General Description The MIC4604 is an 85V Half Bridge MOSFET driver. The MIC4604 features fast 39ns propagation delay times and 20ns driver rise/fall times for a 1nF capacitive load. The |
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MIC4604 MIC4604YM MIC4604YMT MIC4604YMT | |
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Contextual Info: MIC4605 Evaluation Board 85V Half-Bridge MOSFET Drivers with Adaptive Dead Time and Shoot-Through Protection General Description Getting Started The MIC4605 is an 85V half-bridge MOSFET driver that features adaptive-dead-time and shoot-through protection. |
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MIC4605 MIC4605â | |
si7121
Abstract: Si4914B SI-4102 SI4599 Si4483A sir166 irfd120 si7949 si4459a SIR836
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Mediu33-4-9337-2727 VMN-SG2127-1210 si7121 Si4914B SI-4102 SI4599 Si4483A sir166 irfd120 si7949 si4459a SIR836 |