SIR494DP Search Results
SIR494DP Price and Stock
Vishay Siliconix SIR494DP-T1-GE3MOSFET N-CH 12V 60A PPAK SO-8 |
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SIR494DP-T1-GE3 | Reel |
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Vishay Intertechnologies SIR494DP-T1-GE3 |
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SIR494DP-T1-GE3 | 3,633 |
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SIR494DP-T1-GE3 | 143 Weeks | 3,000 |
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SIR494DP Datasheets (1)
Part | ECAD Model | Manufacturer | Description | Curated | Datasheet Type | |
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SIR494DP-T1-GE3 | Vishay Siliconix | FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 12V 60A PPAK 8SOIC | Original |
SIR494DP Datasheets Context Search
Catalog Datasheet | Type | Document Tags | |
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transistor c 6073
Abstract: mosfet 0018 AN609 SiR494DP 174576
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SiR494DP AN609, 09-Apr-09 transistor c 6073 mosfet 0018 AN609 174576 | |
Contextual Info: New Product SiR494DP Vishay Siliconix N-Channel 12-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.0012 at VGS = 10 V 60 0.0017 at VGS = 4.5 V 60 VDS (V) 12 Qg (Typ.) 50 nC PowerPAK SO-8 • Halogen-free According to IEC 61249-2-21 Definition |
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SiR494DP 2002/95/EC SiR494DP-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 | |
SIR494Contextual Info: New Product SiR494DP Vishay Siliconix N-Channel 12-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.0012 at VGS = 10 V 60 0.0017 at VGS = 4.5 V 60 VDS (V) 12 Qg (Typ.) 50 nC PowerPAK SO-8 • Halogen-free According to IEC 61249-2-21 Definition |
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SiR494DP 2002/95/EC SiR494DP-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 SIR494 | |
Contextual Info: New Product SiR494DP Vishay Siliconix N-Channel 12-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.0012 at VGS = 10 V 60 0.0017 at VGS = 4.5 V 60 VDS (V) 12 Qg (Typ.) 50 nC PowerPAK SO-8 • Halogen-free According to IEC 61249-2-21 Definition |
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SiR494DP 2002/95/EC SiR494DP-T1-GE3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 | |
Contextual Info: SPICE Device Model SiR494DP www.vishay.com Vishay Siliconix N-Channel 12 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C |
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SiR494DP 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 | |
SiR494DPContextual Info: New Product SiR494DP Vishay Siliconix N-Channel 12-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.0012 at VGS = 10 V 60 0.0017 at VGS = 4.5 V 60 VDS (V) 12 Qg (Typ.) 50 nC PowerPAK SO-8 • Halogen-free According to IEC 61249-2-21 Definition |
Original |
SiR494DP 2002/95/EC SiR494DP-T1-GE3 11-Mar-11 | |
SiR494DPContextual Info: SPICE Device Model SiR494DP Vishay Siliconix N-Channel 12 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C |
Original |
SiR494DP 18-Jul-08 | |
Contextual Info: New Product SiR494DP Vishay Siliconix N-Channel 12-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.0012 at VGS = 10 V 60 0.0017 at VGS = 4.5 V 60 VDS (V) 12 Qg (Typ.) 50 nC PowerPAK SO-8 • Halogen-free According to IEC 61249-2-21 Definition |
Original |
SiR494DP 2002/95/EC SiR494DP-T1-GE3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 | |
Contextual Info: New Product SiR494DP Vishay Siliconix N-Channel 12-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.0012 at VGS = 10 V 60 0.0017 at VGS = 4.5 V 60 VDS (V) 12 Qg (Typ.) 50 nC PowerPAK SO-8 • Halogen-free According to IEC 61249-2-21 Definition |
Original |
SiR494DP 2002/95/EC SiR494DP-T1-GE3 11-Mar-11 | |
SiR494DPContextual Info: New Product SiR494DP Vishay Siliconix N-Channel 12-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.0012 at VGS = 10 V 60 0.0017 at VGS = 4.5 V 60 VDS (V) 12 Qg (Typ.) 50 nC PowerPAK SO-8 • Halogen-free According to IEC 61249-2-21 Definition |
Original |
SiR494DP 2002/95/EC SiR494DP-T1-GE3 18-Jul-08 | |
FSQ510 Equivalent
Abstract: BTA12 6008 bta16 6008 ZIGBEE interface with AVR ATmega16 Precision triac control thermostat thyristor t 558 f eupec gw 5819 diode transistor a564 A564 transistor BSM25GP120 b2
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GP-20) FSQ510 Equivalent BTA12 6008 bta16 6008 ZIGBEE interface with AVR ATmega16 Precision triac control thermostat thyristor t 558 f eupec gw 5819 diode transistor a564 A564 transistor BSM25GP120 b2 | |
Contextual Info: V i s h ay I n tertec h n olo g y, I n c . Power MOSFETs M O S F ET s Tre nchFET G e n III Key features and Benefits Low conduction and switching losses enable increased efficiency and reduced power consumption • Record-breaking maximum on-resistance at VGS = 4.5 V rating |
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VMN-PT0105-1007 | |
si7121
Abstract: Si4914B SI-4102 SI4599 Si4483A sir166 irfd120 si7949 si4459a SIR836
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Mediu33-4-9337-2727 VMN-SG2127-1210 si7121 Si4914B SI-4102 SI4599 Si4483A sir166 irfd120 si7949 si4459a SIR836 | |
Diode SOT-23 marking 15d
Abstract: SI4210 si4812b SI-4102 SI7149DP SiM400 si4932 si7135 SiB914 SI4477
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Diod92 VMN-SG2127-0911 Diode SOT-23 marking 15d SI4210 si4812b SI-4102 SI7149DP SiM400 si4932 si7135 SiB914 SI4477 |