SILICON SWITCHING DIODE Search Results

diode 701

Abstract: MMT3960A MMT3905 MMCM3905 MMCM3906 MMCM3960A MMD6050 MMD70 MMT3960
Contextual Info: MMCM3905, MMCM3906 silicon (ceramic package) For Specifications, See MMT3905 Data. MMCM3960A (SILICON) (CERAMIC PACKAGE) For Specifications, See MMT3960A Data. MMD70 (SILICON) MICROMINIATURE SILICON EPITAXIAL SWITCHING DIODE SILICON EPITAXIAL SWITCHING DIODE

Contextual Info: SILICON PIN DIODES Plastic package Surface Mount switching silicon PIN diodes MICROWAVE PLASTIC PACKAGE SURFACE MOUNT SWITCHING SILICON PIN DIODES Description TEMEX COMPONENTS uses its proprietary technology to manufacture its Silicon PIN diodes in plastic

TEKELEC 302

Abstract: Tekelec Temex
Contextual Info: SILICON PIN DIODES SOT23 surface mount switching silicon PIN diodes SOT23 SURFACE MOUNT SWITCHING SILICON PIN DIODES Features Description • Low series resistance • Low capacitance • Fast switching diodes • Surface mount package • Tape and reel packaging available

MPN3401

Abstract: MPN3402
Contextual Info: MPN3401 silicon MPN3402 SILICON PIN SWITCHING DIODE SILICON PIN DIODE . . . designed primarily for VH F band switching applications but also suitable for use in general-purpose switching and attenuator circuits. Supplied in an inexpensive low-inductance plastic package for low

NEC IR

Abstract: 1SS303 NEC IR application note
Contextual Info: DATA SHEET SILICON SWITCHING DIODE 1SS303 HIGH SPEED SWITCHING SILICON EPITAXIAL DOUBLE DIODE : COMMON ANODE FEATURES PACKAGE DIMENSIONS Unit: mm Low capacitance: Ct = 2.5 pF TYP. High speed switching: trr = 4.0 ns MAX. Wide applications including switching, limitter, clipper.

marking A14

Abstract: 1SS305
Contextual Info: DATA SHEET SILICON SWITCHING DIODE 1SS305 HIGH SPEED SWITCHING SILICON EPITAXIAL DIODE FEATURES PACKAGE DIMENSIONS Unit: mm • Low capacitance: Ct = 4.0 pF MAX. • High speed switching: trr = 3.0 ns MAX. • Wide applications including switching, limitter, clipper.

NEC 2101

Abstract: 1SS304 marking A6
Contextual Info: DATA SHEET SILICON SWITCHING DIODE 1SS304 HIGH SPEED SWITCHING SILICON EPITAXIAL DOUBLE DIODE : COMMON CATHODE FEATURES PACKAGE DIMENSIONS Unit: mm Low capacitance: Ct = 1.1 pF TYP. High speed switching: trr = 3.0 ns MAX. Wide applications including switching, limitter, clipper.

melf diodes color code

Abstract: CLL4148 CLL4448
Contextual Info: IS/ISO 9002 Lic# QSC/L- 000019.2 Continental Device India Limited IS / IECQC 700000 IS / IECQC 750100 An IS/ISO 9002 and IECQ Certified Manufacturer SILICON SWITCHING DIODES Hermetically Sealed Glass Silicon Switching Diodes SOD80C Switching Diodes CLL4148 and CLL4448, 500 mW Hermetically Sealed, Glass Silicon Diodes

MMD7001

Abstract: DP 704 C
Contextual Info: MMD7001 silicon MICROMINIATURE SILICON EPITAXIAL DUAL SWITCHING DIODE SILICON EPITAXIAL DUAL SWITCHING DIODE . . . designed fo r general purpose, high-speed switching applications. • High Breakdown Voltage — • Fast Reverse Recovery Tim e t rr = 3.2 ns (T y p ) @ I p = I r = 10 m Adc

MA47080-30

Contextual Info: MA47080-30 SILICON PIN SWITCHING DIODE DESCRIPTION: The ASI MA47080-30 is a Passivated Silicon PIN Switching Diode. Designed for control applications such as RF Switching, Limiting, Duplexing, Phase Shifting Variable Attenuation, Modulation, and Pulse forming.

D102

Abstract: d1 marking diode
Contextual Info: Central CMPD6001 CMPD6001A CMPD6001C CMPD6001S Semiconductor Corp. SURFACE MOUNT LOW LEAKAGE SILICON SWITCHING DIODE DESCRIPTION: The CENTRAL SEMICONDUCTOR CMPD6001 series types are silicon switching diodes manufactured by the epitaxial planar process, designed for switching applications requiring an

Contextual Info: LESHAN RADIO COMPANY, LTD. Silicon Pin Diode LMBV3401LT1G This device is designd primarily for VHF band switching applications but is also suitable for use in general-purpose switching circuits.Supplied in a surface Mount package. SILICON PIN SWITCHING DIODE

DIODE 4d

Abstract: MMBV3401LT1
Contextual Info: LESHAN RADIO COMPANY, LTD. Silicon Pin Diode MMBV3401LT1 This device is designd primarily for VHF band switching applications but is also suitable for use in general-purpose switching circuits.Supplied in a surface Mount package. SILICON PIN SWITCHING DIODE

ultrafast igbt

Abstract: 1200-VOLT IGBT 50 amp 1000 volt calculation of IGBT snubber CPWR-AN03 Cree SiC MOSFET 12 VOLT 10 AMP smps 24 volt 10 amp smps power diode AN-11A
Contextual Info: Hard-Switched Silicon IGBTs? Cut Switching Losses in Half with Silicon Carbide Schottky Diodes by Jim Richmond Replacing the Si Ultrafast soft-recovery diode used as the freewheeling component in hard-switched IGBT applications with a Silicon Carbide SiC Schottky diode reduces the switching losses in the diode by 80% and the switching

Contextual Info: AP1000A-001 SILICON PIN SWITCHING DIODE DESCRIPTION: The AP1000A-001 is a passivated epitaxial Silicon PIN Switching Diode, designed to cover a wide range of control applications that are in the category of RF switching. PACKAGE STYLE 001 MAXIMUM RATINGS IC

00QC

Contextual Info: Central BAW100 semiconductor Corp. SURFACE MOUNT DUAL, ISOLATED HIGH SPEED SILICON SWITCHING DIODES DESCRIPTION: The CENTRAL SEM ICONDUCTOR BAW100 is a Dual, Isolated High Speed Silicon Switching Diode in a SOT-143 surface mount package, designed for high speed switching applications.

Contextual Info: Silicon Pin Diode MMBV3401LT1 This device is designd primarily for VHF band switching applications but is also suitable for use in general-purpose switching circuits.Supplied in a surface Mount package. SILICON PIN SWITCHING DIODE • Rugged Pin Structure Coupled with Wirebond Construction

d2 diode series

Abstract: marking code DIODE R3 ulc 2003 diode Marking Code 65 marking code REC marking code diode marking CODE D2 DIODE diode marking JA MARKING CODE VF CMPD6001
Contextual Info: CMPD6001 CMPD6001A CMPD6001C CMPD6001S SURFACE MOUNT LOW LEAKAGE SILICON SWITCHING DIODE Central TM Semiconductor Corp. DESCRIPTION: The CENTRAL SEMICONDUCTOR CMPD6001 series types are silicon switching diodes manufactured by the epitaxial planar process,

L4821A

Abstract: SPD10S30 A101 SIDC03D30SIC2
Contextual Info: Preliminary SIDC03D30SIC2 Silicon Carbide Schottky Diode FEATURES: Applications: • • • • • • Revolutionary semiconductor material Silicon Carbide Switching behavior benchmark No reverse recovery No temperature influence on the switching behavior

Contextual Info: Preliminary SIDC03D30SIC2 Silicon Carbide Schottky Diode FEATURES: Applications: • • • • • • Revolutionary semiconductor material Silicon Carbide Switching behavior benchmark No reverse recovery No temperature influence on the switching behavior

DIODE MARKING CODE F1

Abstract: IR 30 D1 Diode CMPD3003 CMPD3003A CMPD3003C CMPD3003S JA marking Diode Switching d2 marking lla marking code DIODE
Contextual Info: CMPD3003 CMPD3003A CMPD3003C CMPD3003S Central TM Semiconductor Corp. SURFACE MOUNT LOW LEAKAGE SILICON SWITCHING DIODE DESCRIPTION: The CENTRAL SEMICONDUCTOR CMPD3003 series types are silicon switching diodes manufactured by the epitaxial planar process,

L4821A

Contextual Info: Preliminary SIDC03D30SIC2 Silicon Carbide Schottky Diode FEATURES: Applications: • • • • • • Revolutionary semiconductor material Silicon Carbide Switching behavior benchmark No reverse recovery No temperature influence on the switching behavior

marking c2 diode

Abstract: marking r2 diode diode Marking code A2 marking code C2 diode marking code R2 sot23 DIODE MARKING CODE A1 A2 marking diode diode code a2 marking Ja diode diode MARKING A1
Contextual Info: CMPD6001 CMPD6001A CMPD6001C CMPD6001S SURFACE MOUNT LOW LEAKAGE SILICON SWITCHING DIODE Central TM Semiconductor Corp. DESCRIPTION: The CENTRAL SEMICONDUCTOR CMPD6001 series types are silicon switching diodes manufactured by the epitaxial planar process,

Contextual Info: Preliminary SIDC03D30SIC2 Silicon Carbide Schottky Diode FEATURES: Applications: • • • • • • Revolutionary semiconductor material Silicon Carbide Switching behavior benchmark No reverse recovery No temperature influence on the switching behavior