SIDC03D30SIC2 Search Results
SIDC03D30SIC2 Datasheets (3)
| Part | ECAD Model | Manufacturer | Description | Curated | Datasheet Type | |
|---|---|---|---|---|---|---|
| SIDC03D30SIC2 |
|
Silicon Carbide Schottky Diode | Original | |||
| SIDC03D30SIC2(SAWN) |
|
Diodes - HV Chips - 300V, 10A die sawn | Original | |||
| SIDC03D30SIC2(UNSAWN) |
|
Diodes - HV Chips - 300V, 10A die unsawn | Original |
SIDC03D30SIC2 Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
|---|---|---|---|
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Contextual Info: Preliminary SIDC03D30SIC2 Silicon Carbide Schottky Diode FEATURES: Applications: • • • • • • Revolutionary semiconductor material Silicon Carbide Switching behavior benchmark No reverse recovery No temperature influence on the switching behavior |
Original |
SIDC03D30SIC2 32mm2 Q67050-A4163sawn Q67050-A4163unsawn L4821A, | |
L4821AContextual Info: Preliminary SIDC03D30SIC2 Silicon Carbide Schottky Diode FEATURES: Applications: • • • • • • Revolutionary semiconductor material Silicon Carbide Switching behavior benchmark No reverse recovery No temperature influence on the switching behavior |
Original |
SIDC03D30SIC2 SIDC03D30SIC2 32mm2 Q67050-A4163sawn Q67050-A4163unsawn L4821A, L4821A | |
L4821A
Abstract: SPD10S30 A101 SIDC03D30SIC2
|
Original |
SIDC03D30SIC2 Q67050-A4163sawn Q67050-A4163unsawn L4821A, L4821A SPD10S30 A101 SIDC03D30SIC2 | |
|
Contextual Info: Preliminary SIDC03D30SIC2 Silicon Carbide Schottky Diode FEATURES: Applications: • • • • • • Revolutionary semiconductor material Silicon Carbide Switching behavior benchmark No reverse recovery No temperature influence on the switching behavior |
Original |
SIDC03D30SIC2 SIDC03D30SIC2 32mm2 Q67050-A4163A1 Q67050-A4163A2 L4821A, |